公开(公告)号：US11054327B2

公开(公告)日：2021-07-06

申请号：US16248415

申请日：2019-01-15

Applicant: STMicroelectronics S.r.l.

Inventor： Enri Duqi ,  Lorenzo Baldo

IPC: G01L9/00 ,  G01L27/00 ,  H01L41/113 ,  H01L41/187

Abstract: A microelectromechanical pressure sensor includes a monolithic body of semiconductor material having a front surface. A sensing structure is integrated in the monolithic body and has a buried cavity completely contained within the monolithic body at the front surface. A sensing membrane is suspended above the buried cavity and is formed by a surface portion of the monolithic body. Sensing elements of a piezoresistive type are arranged in the sensing membrane to detect a deformation of the sensing membrane as a result of a pressure. The pressure sensor is further provided with a self-test structure integrated within the monolithic body to cause application of a testing deformation of the sensing membrane in order to verify proper operation of the sensing structure.

公开(公告)号：US10809140B2

公开(公告)日：2020-10-20

申请号：US14980373

申请日：2015-12-28

Applicant: STMicroelectronics S.R.L.

Inventor： Enri Duqi ,  Sebastiano Conti ,  Sonia Costantini

IPC: G01L9/00 ,  G01L9/06 ,  B81B7/00 ,  B81C1/00

Abstract: A pressure sensor designed to detect a value of ambient pressure of the environment external to the pressure sensor includes: a first substrate having a buried cavity and a membrane suspended over the buried cavity; a second substrate having a recess, hermetically coupled to the first substrate so that the recess defines a sealed cavity the internal pressure value of which provides a pressure-reference value; and a channel formed at least in part in the first substrate and configured to arrange the buried cavity in communication with the environment external to the pressure sensor. The membrane undergoes deflection as a function of a difference of pressure between the pressure-reference value in the sealed cavity and the ambient-pressure value in the buried cavity.

公开(公告)号：US10689251B2

公开(公告)日：2020-06-23

申请号：US16522301

申请日：2019-07-25

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Enri Duqi ,  Lorenzo Baldo ,  Roberto Carminati

IPC: B81C1/00 ,  B81B7/02 ,  B81B3/00

Abstract: MEMS device, in which a body made of semiconductor material contains a chamber, and a first column inside the chamber. A cap of semiconductor material is attached to the body and forms a first membrane, a first cavity and a first channel. The chamber is closed on the side of the cap. The first membrane, the first cavity, the first channel and the first column form a capacitive pressure sensor structure. The first membrane is arranged between the first cavity and the second face, the first channel extends between the first cavity and the first face or between the first cavity and the second face and the first column extends towards the first membrane and forms, along with the first membrane, plates of a first capacitor element.

公开(公告)号：US10549982B2

公开(公告)日：2020-02-04

申请号：US15884624

申请日：2018-01-31

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Enri Duqi ,  Bruno Murari ,  Sebastiano Conti

IPC: H01L29/82 ,  B81B3/00 ,  B81B7/00

Abstract: A packaged pressure sensor, comprising: a MEMS pressure-sensor chip; and an encapsulating layer of elastomeric material, in particular PDMS, which extends over the MEMS pressure-sensor chip and forms a means for transferring a force, applied on a surface thereof, towards the MEMS pressure-sensor chip.

公开(公告)号：US20180148325A1

公开(公告)日：2018-05-31

申请号：US15591652

申请日：2017-05-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Enri Duqi ,  Lorenzo Baldo ,  Domenico Giusti

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00238 ,  B81B7/0051 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/0133 ,  B81C2203/032 ,  B81C2203/035 ,  B81C2203/0792

Abstract: An integrated device includes: a first die; a second die coupled in a stacked way on the first die along a vertical axis; a coupling region arranged between facing surfaces of the first die and of the second die, which face one another along the vertical axis and lie in a horizontal plane orthogonal to the vertical axis, for mechanical coupling of the first and second dies; electrical-contact elements carried by the facing surfaces of the first and second dies, aligned in pairs along the vertical axis; and conductive regions arranged between the pairs of electrical-contact elements carried by the facing surfaces of the first and second dies, for their electrical coupling. Supporting elements are arranged at the facing surface of at least one of the first and second dies and elastically support respective electrical-contact elements.

公开(公告)号：US20170144881A1

公开(公告)日：2017-05-25

申请号：US15191160

申请日：2016-06-23

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Lorenzo Baldo ,  Enri Duqi ,  Flavio Francesco Villa

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0045 ,  B81B3/0072 ,  B81B2201/0228 ,  B81B2201/025 ,  B81B2203/0127 ,  B81B2203/0163 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C1/00182 ,  B81C1/00325 ,  B81C2201/0116 ,  B81C2201/0173 ,  B81C2203/0785 ,  G02B26/0858

Abstract: A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

公开(公告)号：US12134556B2

公开(公告)日：2024-11-05

申请号：US17534286

申请日：2021-11-23

Applicant: STMICROELECTRONICS S.R.L. ,  STMicroelectronics International N.V.

Inventor： Enri Duqi ,  Lorenzo Baldo ,  Paolo Ferrari ,  Benedetto Vigna ,  Flavio Francesco Villa ,  Laura Maria Castoldi ,  Ilaria Gelmi

IPC: B81B7/00

Abstract: A semiconductor device includes: a substrate; a transduction microstructure integrated in the substrate; a cap joined to the substrate and having a first face adjacent to the substrate and a second, outer, face; and a channel extending through the cap from the second face to the first face and communicating with the transduction microstructure. A protective membrane made of porous polycrystalline silicon permeable to aeriform substances is set across the channel.

公开(公告)号：US11747608B2

公开(公告)日：2023-09-05

申请号：US16847514

申请日：2020-04-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Enri Duqi ,  Dario Paci ,  Lorenzo Baldo ,  Domenico Giusti

IPC: G02B26/08 ,  B81B3/00 ,  H01L27/146

CPC classification number: G02B26/08 ,  B81B3/0018 ,  H01L27/14627 ,  B81B2201/047

Abstract: A MEMS optical device including: a semiconductor body; a main cavity, which extends within the semiconductor body; a membrane suspended over the main cavity; a piezoelectric actuator, which is mechanically coupled to the membrane and can be electronically controlled so as to deform the membrane; a micro-lens, mechanically coupled to the membrane so as to undergo deformation following the deformation of the membrane; and a rigid optical element, which contacts the micro-lens and is arranged so that the micro-lens is interposed between the rigid optical element and the membrane. The micro-lens and the main cavity are arranged on opposite sides of the membrane.

公开(公告)号：US11673799B2

公开(公告)日：2023-06-13

申请号：US17155429

申请日：2021-01-22

Applicant: STMicroelectronics S.r.l.

Inventor： Enri Duqi ,  Nicolo′ Boni ,  Lorenzo Baldo ,  Massimiliano Merli ,  Roberto Carminati

IPC: B81C1/00 ,  H01L41/35

CPC classification number: B81C1/00158 ,  H01L41/35 ,  B81C2201/013

Abstract: To manufacture an oscillating structure, a wafer is processed by: forming torsional elastic elements; forming a mobile element connected to the torsional elastic elements; processing the first side of the wafer to form a mechanical reinforcement structure; and processing the second side of said wafer by steps of chemical etching, deposition of metal material, and/or deposition of piezoelectric material. Processing of the first side of the wafer is carried out prior to processing of the second side of the wafer so as not to damage possible sensitive structures formed on the first side of the wafer.

公开(公告)号：US11555554B2

公开(公告)日：2023-01-17

申请号：US16842474

申请日：2020-04-07

Applicant: STMicroelectronics S.r.l.

Inventor： Enri Duqi ,  Lorenzo Baldo

IPC: F16K99/00 ,  F16K31/00 ,  B23P15/00 ,  H01L41/09

Abstract: A microfluidic valve formed in a body having a first and a second surface; an inlet channel extending in the body from the second surface; a first transverse channel extending in the body in a transverse direction with respect to the inlet channel; and an outlet channel extending in the body from the first surface. The inlet channel, the first transverse channel and the outlet channel form a fluidic path. The microfluidic valve further has an occluding portion, formed by the body and extending over the transverse channel; and a piezoelectric actuator coupled to the occluding portion and configured to move the occluding portion from an opening position of the valve, where the occluding portion does not interfere with the fluidic path, and a closing position of the valve, where the occluding portion interferes with and interrupts the fluidic path.