公开(公告)号：US07863086B2

公开(公告)日：2011-01-04

申请号：US12553780

申请日：2009-09-03

申请人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

发明人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

IPC分类号： H01L51/40

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US07638358B2

公开(公告)日：2009-12-29

申请号：US11601086

申请日：2006-11-17

申请人： Joon-hak Oh ,  Mun-pyo Hong ,  Bo-sung Kim ,  Yong-uk Lee

发明人： Joon-hak Oh ,  Mun-pyo Hong ,  Bo-sung Kim ,  Yong-uk Lee

IPC分类号： H01L21/00

CPC分类号： H01L51/0545 ,  B82Y30/00 ,  H01L27/3244 ,  H01L51/0005 ,  H01L51/0016 ,  H01L51/0558

摘要： According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.

摘要翻译： 根据本发明的实施例，显示装置的制造方法包括在绝缘基板上形成包括栅电极的多条栅极线，形成包括彼此间隔开的源电极和漏极的电极层， 在所述栅极电极之间限定沟道区，形成第一阻挡壁，所述第一阻挡壁具有用于暴露所述沟道区的第一开口，所述源极的一部分以及所述第一阻挡壁具有的所述电极层上的所述漏电极的一部分 形成屏蔽膜以覆盖第一开口内的沟道区域，处理第一阻挡壁的表面，去除屏蔽膜，以及在第一开口内部形成有机半导体层。

公开(公告)号：US20070099323A1

公开(公告)日：2007-05-03

申请号：US11592062

申请日：2006-11-02

申请人： Jae-hyuk Chang ,  Mun-pyo Hong ,  Nam-seok Roh

发明人： Jae-hyuk Chang ,  Mun-pyo Hong ,  Nam-seok Roh

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/2014 ,  H01L29/78633

摘要： A method of manufacturing a display device in which a film deposited on a substrate through openings in a covering layer is easily removed from the covering layer. A master layer having a predetermined pattern of openings is formed on a base substrate exposing portions of the base substrate. A light shielding material is sprayed on the master layer to penetrate inside the openings after the surface of the base substrate exposed through the opening of the master layer has been treated to increase the difference of interface tensions between the master layer and the light shielding material; fabricating a mold provided with the light shielding film by forming a moldable material layer on the base substrate and the master layer and then curing the moldable material layer and the light shielding material; arranging, pressurizing and exposing the mold on an insulation substrate having a photosensitive film formed thereon after separating the mold from the master layer; and developing the photosensitive film after separating the mold from the insulation substrate.

摘要翻译： 一种制造显示装置的方法，其中通过覆盖层中的开口沉积在基板上的薄膜容易从覆盖层去除。 在基底基板上形成具有预定开口图案的母层，露出基底基板的部分。 在通过主层的开口露出的基底基板的表面已经被处理以增加主层和遮光材料之间的界面张力的差异之后，将遮光材料喷涂在主层上，以穿透开口内部。 通过在基底基板和母层上形成可模制材料层，然后固化可模制材料层和遮光材料，制造设置有遮光膜的模具; 在将模具与主层分离之后，在其上形成有感光膜的绝缘基板上布置，加压和曝光模具; 以及在将模具与绝缘基板分离之后显影感光膜。

公开(公告)号：US20070099318A1

公开(公告)日：2007-05-03

申请号：US11592110

申请日：2006-11-01

申请人： Jae-hyuk Chang ,  Nam-seok Roh ,  Mun-pyo Hong

发明人： Jae-hyuk Chang ,  Nam-seok Roh ,  Mun-pyo Hong

IPC分类号： H01L21/00

CPC分类号： G02F1/133553 ,  G02F1/133504 ,  G02F1/136227

摘要： A method for manufacturing a display device, comprises; providing an insulating substrate; forming a passivation layer on the insulating substrate; arranging a mold including a supporting layer, a pattern forming layer provided on a first surface of the supporting layer and having concaves-convexes formed thereon and a buffer layer formed on the other surface of the supporting layer so that the pattern forming layer faces the passivation layer; and pressurizing the mold to form a concave-convex pattern corresponding to the concaves-convexes on the passivation layer. Thus, the present invention provides a method for manufacturing a display device being capable of enhancing the reproducibility and yield of the concave-convex pattern.

摘要翻译： 一种显示装置的制造方法，包括： 提供绝缘基板; 在所述绝缘基板上形成钝化层; 布置包括支撑层的模具，设置在支撑层的第一表面上并具有形成在其上的凹凸的图案形成层和形成在支撑层的另一个表面上的缓冲层，使得图案形成层面向钝化 层; 并对模具加压以形成对应于钝化层上的凹凸的凹凸图案。 因此，本发明提供一种能够提高凹凸图案的再现性和收率的显示装置的制造方法。

公开(公告)号：US20070024557A1

公开(公告)日：2007-02-01

申请号：US11495834

申请日：2006-07-28

申请人： Nam-seok Rho ,  Mun-pyo Hong

发明人： Nam-seok Rho ,  Mun-pyo Hong

IPC分类号： G09G3/36

CPC分类号： G09G5/005 ,  G09G3/2003 ,  G09G3/3648 ,  G09G5/006 ,  G09G2320/0276 ,  G09G2340/02 ,  G09G2340/06 ,  G09G2360/02

摘要： A video signal processor, a display device, and a method of driving the same, that consumes relatively low power and requires relatively small storage capacity, are provided. In one embodiment, a video signal processor comprises an interface to receive an external video signal; a signal converter including an RGBW logic to convert the video signal into an RGBW video signal, a rendering logic to render the converted RGBW video signal; a buffer to store the RGBW video signal; and a system controller to control the buffer and to output the buffered RGBW video signal.

摘要翻译： 提供了一种视频信号处理器，显示装置及其驱动方法，其消耗相对较低的功率并且需要相对较小的存储容量。 在一个实施例中，视频信号处理器包括用于接收外部视频信号的接口; 包括用于将视频信号转换为RGBW视频信号的RGBW逻辑的信号转换器，呈现转换的RGBW视频信号的渲染逻辑; 用于存储RGBW视频信号的缓冲器; 以及系统控制器，用于控制缓冲器并输出缓冲的RGBW视频信号。

公开(公告)号：US20070023837A1

公开(公告)日：2007-02-01

申请号：US11495911

申请日：2006-07-27

申请人： Yong-uk Lee ,  Joon-hak Oh ,  Bo-sung Kim ,  Mun-pyo Hong

发明人： Yong-uk Lee ,  Joon-hak Oh ,  Bo-sung Kim ,  Mun-pyo Hong

IPC分类号： H01L27/12

CPC分类号： H01L51/0541 ,  H01L51/0005 ,  H01L51/0097 ,  H01L51/0545

摘要： The present invention relates to a thin film transistor substrate comprising: an insulating substrate; a source electrode and a drain electrode which are formed on the insulating substrate and separated from each other and have a channel area therebetween; a wall exposing at least portions of the source electrode and the drain electrode, respectively, encompassing the channel area, and formed of fluoropolymer; and an organic semiconductor layer formed inside the wall. Thus, the present invention provides a TFT substrate where an organic semiconductor layer is planarized. Further, the present invention also provides a method of making a TFT substrate of which an organic semiconductor layer is planarized.

摘要翻译： 本发明涉及一种薄膜晶体管基板，包括：绝缘基板; 源电极和漏电极，其形成在绝缘基板上并且彼此分离并且在其间具有沟道区域; 分别暴露出源电极和漏电极的至少部分，其包围沟道区域，并由含氟聚合物形成; 和形成在壁内的有机半导体层。 因此，本发明提供了有机半导体层被平坦化的TFT基板。 此外，本发明还提供一种使有机半导体层平坦化的TFT基板的制造方法。

公开(公告)号：US20070018161A1

公开(公告)日：2007-01-25

申请号：US11433733

申请日：2006-05-12

申请人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

发明人： Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh ,  Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US20070012916A1

公开(公告)日：2007-01-18

申请号：US11486685

申请日：2006-07-14

申请人： Tae-young Choi ,  Jun-hyung Kim ,  Keun-kyu Song ,  Mun-pyo Hong

发明人： Tae-young Choi ,  Jun-hyung Kim ,  Keun-kyu Song ,  Mun-pyo Hong

IPC分类号： H01L51/00 ,  H01L51/40

CPC分类号： H01L27/283 ,  H01L27/3244 ,  H01L51/0545

摘要： A method for fabricating a flat panel display, comprising preparing an insulating substrate; forming separated source and drain electrodes on the insulating substrate to define a channel region; forming a first passivation layer on the source and drain electrodes; forming a metal layer having an opening corresponding to the channel region on the first passivation layer; forming a deposition opening in the passivation layer by using the metal layer as a mask to expose the channel region; forming an organic semiconductor layer and a second passivation layer, in turn, in the deposition opening and on the metal layer; and removing the metal layer, the organic semiconductor layer and the second passivation layer while allowing the layers formed in the deposition opening to remain.

摘要翻译： 一种制造平板显示器的方法，包括制备绝缘基板; 在所述绝缘基板上形成分离的源极和漏极以限定沟道区; 在源极和漏极上形成第一钝化层; 在所述第一钝化层上形成具有与所述沟道区对应的开口的金属层; 通过使用金属层作为掩模在钝化层中形成沉积开口以暴露沟道区; 在沉积开口和金属层上依次形成有机半导体层和第二钝化层; 并且在保留形成在沉积开口中的层的同时去除金属层，有机半导体层和第二钝化层。

公开(公告)号：US5969386A

公开(公告)日：1999-10-19

申请号：US940066

申请日：1997-09-29

申请人： Mun-pyo Hong

发明人： Mun-pyo Hong

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L21/223

CPC分类号： H01L29/4958 ,  H01L21/28008 ,  H01L29/4966 ,  H01L29/66765

摘要： An aluminum gate for a thin film transistor is fabricating by implanting ions into the exposed surface of the aluminum gate. The ions are preferably selected from the group consisting of nitrogen, carbon, oxygen and boron ions. A composite layer of aluminum and the implanted ions thereby formed at the exposed surface of the aluminum layer. Gates for thin film transistors, including an aluminum layer and a composite layer of aluminum and another element at the surface thereof can suppress hillocks in the aluminum gate which may be caused by compressive stresses during subsequent fabrication steps. The composite layer can have a low resistance and can allow a direct contact with an indium tin oxide conductive layer.

摘要翻译： 用于薄膜晶体管的铝栅极通过将离子注入铝栅极的暴露表面来制造。 离子优选选自氮，碳，氧和硼离子。 铝的复合层和由此形成在铝层的暴露表面上的注入离子。 用于薄膜晶体管的栅极，包括铝层和铝表面的复合层和另一元件可以抑制铝栅极中的小丘，这可能是由后续制造步骤中的压应力引起的。 复合层可以具有低电阻并且可以允许与氧化铟锡导电层的直接接触。