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    Low resistivity compound refractory metal silicides with high temperature stability
    34.
    发明申请
    Low resistivity compound refractory metal silicides with high temperature stability 审中-公开
    低电阻复合难熔金属硅化物，具有高温稳定性

    公开(公告)号：US20070120199A1

    公开(公告)日：2007-05-31

    申请号：US11289680

    申请日：2005-11-30

    Applicant: James Pan ,  David Brown

    Inventor： James Pan ,  David Brown

    IPC: H01L29/76

    CPC classification number: H01L29/0847 ,  H01L21/28518 ,  H01L29/456 ,  H01L29/66545 ,  H01L29/66628

    Abstract: Compound refractory metal suicides are formulated to exhibit low resistivity and high temperature stability. Embodiments include various types of semiconductor devices comprising source/drain regions with a compound refractory metal silicide layer thereon, having a resistivity of 1 ohm.μ to 10 ohm.μ and stable at temperatures up to 1100° C.

    Abstract translation: 配制复合难熔金属硅化物以显示低电阻率和高温稳定性。 实施例包括各种类型的半导体器件，其包括源极/漏极区域，其上具有复合难熔金属硅化物层，电阻率为1欧姆至10欧姆·米，在高达1100℃的温度下稳定。

    NS4 NUCLEIC ACIDS AND POLYPEPTIDES AND METHODS OF USE FOR THE TREATMENT OF BODY WEIGHT DISORDERS
    35.
    发明申请
    NS4 NUCLEIC ACIDS AND POLYPEPTIDES AND METHODS OF USE FOR THE TREATMENT OF BODY WEIGHT DISORDERS 审中-公开
    NS4核酸和多肽及其用于治疗体重减轻症的方法

    公开(公告)号：US20070041970A1

    公开(公告)日：2007-02-22

    申请号：US11548405

    申请日：2006-10-11

    Applicant: James Pan ,  Audrey Goddard ,  William Wood

    Inventor： James Pan ,  Audrey Goddard ,  William Wood

    IPC: C12Q1/68 ,  G01N33/567 ,  A61K39/395 ,  C07H21/04 ,  C12P21/06 ,  C07K14/705 ,  C07K16/28

    CPC classification number: C07K14/47 ,  G01N33/6893 ,  G01N2800/02

    Abstract: The present invention is directed to novel polypeptides NS4 and to nucleic acid molecules encoding those polypeptides. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention and to methods for producing the polypeptides of the present invention. Furthermore, methods of treating body weight disorders (e.g., obesity, cachexia or anorexia) are provided.

    Abstract translation: 本发明涉及新型多肽NS4和编码那些多肽的核酸分子。 本文还提供了包含那些核酸序列的载体和宿主细胞，包含与异源多肽序列融合的本发明的多肽的嵌合多肽分子，与本发明的多肽结合的抗体以及本发明的多肽的制备方法 发明。 此外，提供了治疗体重紊乱（例如肥胖症，恶病质或厌食症）的方法。

    FORMING INTEGRATED CIRCUITS USING SELECTIVE DEPOSITION OF UNDOPED SILICON FILM SEEDED IN CHLORINE AND HYDRIDE GAS
    36.
    发明申请
    FORMING INTEGRATED CIRCUITS USING SELECTIVE DEPOSITION OF UNDOPED SILICON FILM SEEDED IN CHLORINE AND HYDRIDE GAS 失效
    使用选择性沉积在氯化物和氢气中的无机硅膜形成集成电路

    公开(公告)号：US20060246679A1

    公开(公告)日：2006-11-02

    申请号：US11425607

    申请日：2006-06-21

    Applicant: Randhir Thakur ,  James Pan

    Inventor： Randhir Thakur ,  James Pan

    IPC: H01L21/20

    CPC classification number: H01L28/84 ,  C23C16/045 ,  C23C16/24 ,  C23C16/56 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L27/10852 ,  H01L28/90 ,  H01L28/91 ,  Y10S438/964

    Abstract: A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on which the film is desired to be formed. Bottom electrodes for capacitors are formed using this process, followed by an anneal to create hemishperical grain (HSG) polysilicon. Multilayer capacitor containers are formed in a non-oxidizing ambient so that no oxide is formed between the layers. The structure formed is planarized to form separate containers made from doped and undoped amorphous silicon layers. Selected ones of undoped layers are seeded in a chlorine containing environment and annealed to form HSG. A dielectric layer and second electrode are formed to complete the cell capacitor.

    Abstract translation: 通过在膜的形成期间流动氯，形成具有增强的选择性的多晶硅膜。 氯作为蚀刻剂，其邻近多晶硅结构的绝缘区域需要形成薄膜。 使用该工艺形成用于电容器的底部电极，随后进行退火以产生半球形晶粒（HSG）多晶硅。 多层电容器容器形成在非氧化环境中，使得在层之间不形成氧化物。 所形成的结构被平坦化以形成由掺杂和未掺杂的非晶硅层制成的分离的容器。 将选定的未掺杂层接种在含氯环境中并退火以形成HSG。 形成电介质层和第二电极以完成电池电容器。

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