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公开(公告)号：US20190221627A1
公开(公告)日：2019-07-18
申请号：US16358889
申请日：2019-03-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Makoto Udagawa , Masahiko Hayakawa , Jun Koyama , Mitsuaki Osame , Aya Anzai
IPC: H01L27/32 , H01L27/12 , H01L29/786 , H01L51/52
CPC classification number: H01L27/3262 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/3276 , H01L29/78675 , H01L29/78696 , H01L51/52
Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
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公开(公告)号：US10062742B2
公开(公告)日：2018-08-28
申请号：US15845459
申请日：2017-12-18
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Masahiko Hayakawa , Yoshifumi Tanada , Mitsuaki Osame , Aya Anzai , Ryota Fukumoto
IPC: H01L27/32 , H01L27/12 , H01L29/04 , G09G3/10 , H01L27/02 , H01L29/786 , G09G3/3233
CPC classification number: H01L27/3262 , G09G3/3233 , G09G2310/0251 , G09G2330/04 , H01L27/0248 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L27/3276 , H01L29/78675
Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.
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公开(公告)号：US09287343B2
公开(公告)日：2016-03-15
申请号：US14608802
申请日：2015-01-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Keitaro Imai , Aya Anzai , Yasuko Watanabe
CPC classification number: H01L27/3276 , H01L23/564 , H01L27/1222 , H01L27/3258 , H01L51/0005 , H01L51/5246 , H01L2924/0002 , H01L2924/00
Abstract: It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.
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公开(公告)号：US20150270322A1
公开(公告)日：2015-09-24
申请号：US14730334
申请日：2015-06-04
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Makoto Udagawa , Masahiko Hayakawa , Jun Koyama , Mitsuaki Osame , Aya Anzai
IPC: H01L27/32 , H01L29/786
CPC classification number: H01L27/3262 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/3276 , H01L29/78675 , H01L29/78696 , H01L51/52
Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
Abstract translation: 本发明提供了一种具有特定长度的TFT的沟道长度，特别是比现有TFT长的几十到几百倍，特别是在栅极电压下变为导通状态 高于现有的和驾驶，并允许具有低通道电导gd。 根据本发明，不仅可以减小导通电流的简单分散，而且可以降低其归一化色散，并且除了各个TFT之间的色散的降低之外，OLED本身的分散和由于 可以降低OLED的劣化。
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公开(公告)号：US08975632B2
公开(公告)日：2015-03-10
申请号：US14143652
申请日：2013-12-30
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Masahiko Hayakawa , Yoshifumi Tanada , Mitsuaki Osame , Aya Anzai , Ryota Fukumoto
CPC classification number: H01L27/3262 , G09G3/3233 , G09G2310/0251 , G09G2330/04 , H01L27/0248 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L27/3276 , H01L29/78675
Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.
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Patent Agency Ranking
公开(公告)号：US08946988B2
公开(公告)日：2015-02-03
申请号：US14293369
申请日：2014-06-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Keitaro Imai , Aya Anzai , Yasuko Watanabe
CPC classification number: H01L27/3276 , H01L23/564 , H01L27/1222 , H01L27/3258 , H01L51/0005 , H01L51/5246 , H01L2924/0002 , H01L2924/00
Abstract: It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.
Abstract translation: 本发明的目的是提供一种防止水和/或氧的外部侵入并防止由于这些侵入物质引起的发光元件劣化的显示装置，并且提供一种制造方法，其包括用于制造显示器的简单制造步骤 设备。 本发明提供了一种在暴露的层间绝缘体的边缘上具有密封材料的显示装置，用于防止来自层间绝缘体的水和/或氧的侵入。 此外，本发明提供一种在暴露的层间绝缘体上具有阻挡体的显示装置，用于防止水和/或氧从层间绝缘体的侵入。 此外，在生产显示装置的制造步骤中应用液滴放电技术可以消除诸如曝光和显影的光刻步骤。 因此，提供了一种生产具有提高的产量的显示装置的方法。
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公开(公告)号：US20130087775A1
公开(公告)日：2013-04-11
申请号：US13689888
申请日：2012-11-30
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Makoto Udagawa , Masahiko Hayakawa , Jun Koyama , Mitsuaki Osame , Aya Anzai
IPC: H01L51/52
CPC classification number: H01L27/3262 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/3276 , H01L29/78675 , H01L29/78696 , H01L51/52
Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
Abstract translation: 本发明提供了一种具有特定长度的TFT的沟道长度，特别是比现有TFT长的几十到几百倍，特别是在栅极电压下变为导通状态 高于现有的和驾驶，并允许具有低通道电导gd。 根据本发明，不仅可以减小导通电流的简单分散，而且可以降低其归一化色散，并且除了各个TFT之间的色散的降低之外，OLED本身的分散和由于 可以降低OLED的劣化。
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公开(公告)号：US11310457B2
公开(公告)日：2022-04-19
申请号：US16663403
申请日：2019-10-25
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Satoshi Murakami , Motomu Kurata , Hiroyuki Hata , Mitsuhiro Ichijo , Takashi Ohtsuki , Aya Anzai , Masayuki Sakakura
IPC: H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036 , H04N5/655 , H01L27/12 , H01L27/32 , H01L51/52 , H01L33/60 , G06F3/02 , H04N5/64 , H01L51/00 , H01L51/56
Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.
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公开(公告)号：US20220076628A1
公开(公告)日：2022-03-10
申请号：US17526062
申请日：2021-11-15
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yu Yamazaki , Aya Anzai , Mitsuaki Osame
IPC: G09G3/3233 , F21V23/06 , G09G3/3266 , H01L27/32 , F21V23/00
Abstract: A light emitting device and an element substrate which are capable of suppressing variations in luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. A gate potential of a driving transistor is connected to a first scan line or a second scan line, and the driving transistor operates in a saturation region. A current controlling transistor which operates in a linear region is connected in series to the driving transistor. A video signal which transmits a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.
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公开(公告)号：US20210327986A1
公开(公告)日：2021-10-21
申请号：US17363734
申请日：2021-06-30
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Makoto Udagawa , Masahiko Hayakawa , Jun Koyama , Mitsuaki Osame , Aya Anzai
IPC: H01L27/32 , H01L29/786 , H01L51/52 , H01L27/12
Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
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