公开(公告)号：US20080128823A1

公开(公告)日：2008-06-05

申请号：US11907319

申请日：2007-10-11

申请人： Shinji Takeoka

发明人： Shinji Takeoka

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/76825 ,  H01L21/76832 ,  H01L21/823864 ,  H01L27/092 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/7843

摘要： A first NMIS transistor includes: a first gate dielectric film over the first active region; a first gate electrode on the first gate dielectric film; a first side-wall dielectric film on side surfaces of the first gate dielectric film and the first gate electrode; a first source/drain region in the first active region outside the first side-wall dielectric film; a first silicide layer in a top-layer portion of the first source/drain region; a second side-wall dielectric film on the first silicide layer around a corner at which the side surface of the first side-wall dielectric film meets an upper surface of the first silicide layer; and a first stressor film for exerting a tensile stress on a channel region in a gate length direction, the first stressor film covering the first gate electrode, the first side-wall dielectric film, and the second side-wall dielectric film.

摘要翻译： 第一NMIS晶体管包括：第一有源区上的第一栅极电介质膜; 在第一栅极电介质膜上的第一栅电极; 在所述第一栅极电介质膜和所述第一栅电极的侧面上的第一侧壁电介质膜; 第一侧壁电介质膜外的第一有源区的第一源/漏区; 在第一源/漏区的顶层部分中的第一硅化物层; 围绕第一侧壁电介质膜的侧表面与第一硅化物层的上表面相交的拐角处的第一硅化物层上的第二侧壁电介质膜; 以及用于在栅极长度方向上的沟道区域施加拉伸应力的第一应力膜，所述第一应力膜覆盖所述第一栅电极，所述第一侧壁电介质膜和所述第二侧壁电介质膜。

公开(公告)号：US20070105336A1

公开(公告)日：2007-05-10

申请号：US11545424

申请日：2006-10-11

申请人： Shinji Takeoka ,  Junji Hirase

发明人： Shinji Takeoka ,  Junji Hirase

IPC分类号： H01L29/80 ,  H01L21/76

CPC分类号： H01L21/823481 ,  H01L21/76237

摘要： A semiconductor device includes: a semiconductor substrate formed with an active region and an isolation region and having a trench formed in the isolation region; an isolation insulating film embedded in the trench of the semiconductor substrate; and semiconductor nanocrystals buried in the isolation insulating film. The coefficient of linear expansion of the semiconductor nanocrystal is closer to that of the semiconductor substrate rather than that of the isolation insulating film, so that stress applied to the active region after a thermal treatment or the like is reduced.

摘要翻译： 半导体器件包括：形成有活性区域和隔离区域并且在隔离区域中形成有沟槽的半导体衬底; 嵌入在半导体衬底的沟槽中的隔离绝缘膜; 和半导体纳米晶体埋在隔离绝缘膜中。 半导体纳米晶体的线膨胀系数比隔离绝缘膜的线性膨胀系数更接近半导体衬底，因此在热处理等之后施加到有源区的应力减小。

公开(公告)号：US20070069304A1

公开(公告)日：2007-03-29

申请号：US11450349

申请日：2006-06-12

申请人： Kazuhiko Aida ,  Junji Hirase ,  Akio Sebe ,  Naoki Kotani ,  Shinji Takeoka ,  Gen Okazaki

发明人： Kazuhiko Aida ,  Junji Hirase ,  Akio Sebe ,  Naoki Kotani ,  Shinji Takeoka ,  Gen Okazaki

IPC分类号： H01L29/94

CPC分类号： H01L21/823835 ,  H01L21/28052 ,  H01L21/823871

摘要： A semiconductor device includes: a first element region and a second element region formed on a substrate to be adjacent to each other with an isolation region interposed therebetween; a first gate insulating film formed on the first element region; a second gate insulating film formed on the second element region; and a gate electrode continuously formed on the first gate insulating film, the isolation region and the second gate insulating film. The gate electrode includes a first silicided region formed to come into contact with the first gate insulating film, a second silicided region which is formed to come into contact with the second gate insulating film and is of a different composition from the first silicided region, and a conductive anti-diffusion region composed of a non-silicided region formed in a part of the gate electrode located on the isolation region and between the first element region and the second element region.

摘要翻译： 半导体器件包括：第一元件区域和第二元件区域，其形成在彼此相邻并且隔着隔离区域彼此相邻的基板上; 形成在所述第一元件区域上的第一栅极绝缘膜; 形成在所述第二元件区域上的第二栅极绝缘膜; 以及连续地形成在第一栅极绝缘膜，隔离区域和第二栅极绝缘膜上的栅电极。 栅电极包括形成为与第一栅极绝缘膜接触的第一硅化物区域，形成为与第二栅极绝缘膜接触并且与第一硅化物区域具有不同组成的第二硅化物区域，以及 由形成在位于隔离区上的栅电极的一部分之间以及第一元件区与第二元件区之间的非硅化区构成的导电抗扩散区。

公开(公告)号：US20070042600A1

公开(公告)日：2007-02-22

申请号：US11491223

申请日：2006-07-24

申请人： Shinji Takeoka

发明人： Shinji Takeoka

IPC分类号： H01L21/4763

CPC分类号： H01L21/768 ,  H01L21/76807

摘要： In a Cu interconnect process, an organic-based low-dielectric-constant interlayer film is formed, and then a protective film is deposited on the side and back surfaces of a wafer bevel and the back surface of a wafer edge. Thereafter, a lithography process and an etching process are carried out, a copper film is formed, and then the protective film is removed.

摘要翻译： 在Cu互连方法中，形成有机基低介电常数层间膜，然后在晶片斜面的侧面和背面以及晶片边缘的背面上沉积保护膜。 此后，进行光刻工艺和蚀刻工艺，形成铜膜，然后除去保护膜。

公开(公告)号：US06933352B2

公开(公告)日：2005-08-23

申请号：US10083555

申请日：2002-02-27

申请人： Eishun Tsuchida ,  Shinji Takeoka ,  Keitaro Sou ,  Haruki Ohkawa

发明人： Eishun Tsuchida ,  Shinji Takeoka ,  Keitaro Sou ,  Haruki Ohkawa

IPC分类号： C07H15/02 ,  C07C229/26 ,  C07C233/47 ,  C07C237/22 ,  C07C271/22 ,  C07K5/02 ,  C07K7/02 ,  C07K14/00 ,  C08B37/00 ,  C08G65/333 ,  C08G69/10 ,  C08L77/00 ,  C08G69/44

CPC分类号： C07C237/22 ,  C07C229/26 ,  C07C233/47 ,  C07C271/22 ,  C07K5/02 ,  C07K5/0215 ,  C07K7/02 ,  C07K14/001

摘要： An amphiphilic compound having a dendritic branch structure represented by general formula (I): In the formula (I), R0 is a hydrophilic group; R1 and R2 are independently a hydrophobic group; and n is an integer of 1 to 4. This amphiphilic compound is capable of stably fixing a water-soluble polymer onto a surface structure by taking advantage of intermolecular interaction, thereby enabling the water-soluble polymer to be carried thereon without giving any damage to the function thereof.

摘要翻译： 具有由通式（I）表示的树枝状支链结构的两亲化合物：在式（I）中，R 0是亲水基团; R 1和R 2分别独立地是疏水基团; n是1〜4的整数。该两亲性化合物能够通过利用分子间相互作用而将水溶性聚合物稳定地固定在表面结构上，从而使水溶性聚合物能够在其上承载而不会对 其功能。

公开(公告)号：US09956751B2

公开(公告)日：2018-05-01

申请号：US13904882

申请日：2013-05-29

申请人： NANOTHETA CO, LTD. ,  TORAY INDUSTRIES, INC. ,  Shinji Takeoka

发明人： Shinji Takeoka ,  Yosuke Okamura ,  Toshinori Fujie ,  Saori Utsunomiya ,  Takahiro Goto

IPC分类号： B32B37/02 ,  B32B27/00 ,  A61K9/70 ,  C08J5/18 ,  C08J7/12 ,  C12N5/00 ,  B32B38/10 ,  A61K9/00

CPC分类号： B32B37/02 ,  A61K9/0014 ,  A61K9/70 ,  A61K9/7007 ,  B32B38/10 ,  C08J5/18 ,  C08J7/12 ,  C12N5/0068 ,  C12N2535/10 ,  Y10T156/10 ,  Y10T428/31504

摘要： A thin film polymer structure having a functional substance on the face (A surface) and reverse face (B surface) of the film, obtained by the steps of: (a) causing polyfunctional molecules to adsorb to an area of an arbitrary shape in an interface between a substrate body and a liquid phase; (b) polymerizing and/or crosslinking the adsorbing polyfunctional molecules to form a polymer thin film; (c) bonding a functional substance to the A surface of the formed thin film and then (d) forming a soluble support film thereon; exfoliating the thin film and the soluble support film from the substrate body; (e) bonding to the B surface of the thin film a functional substance identical to or different from the abovementioned functional substance and then dissolving the soluble support film with a solvent.

公开(公告)号：US20150056399A1

公开(公告)日：2015-02-26

申请号：US14383191

申请日：2013-03-12

申请人： Shinji TAKEOKA ,  NANOTHETA CO, LTD. ,  TORAY INDUSTRIES, INC.

发明人： Shinji Takeoka ,  Akihiro Saito ,  Hong Zhang ,  Natsuki Takamizawa

IPC分类号： C08J5/18

CPC分类号： C08J5/18 ,  B01D67/003 ,  B01D67/009 ,  B01D69/02 ,  B01D69/141 ,  B01D2323/18 ,  B01D2325/02 ,  B01D2325/04 ,  B01D2325/06 ,  B29C41/12 ,  B29C67/202 ,  B82Y40/00 ,  C08J2201/04 ,  C08J2201/0542 ,  C08J2205/044 ,  C08J2333/12 ,  C08J2367/04 ,  C08J2425/06 ,  Y10T428/21 ,  Y10T428/249979

摘要： The objective of the present invention is to provide a porous ultra-thin polymer film, and a method for producing said porous ultra-thin polymer film. The present invention provides a porous ultra-thin polymer film with a film thickness of 10 nm-1000 nm. In addition, the present invention provides a method for producing a porous ultra-thin polymer film, comprising the steps of: dissolving two types of mutually-immiscible polymers in a first solvent in an arbitrary proportion to obtain a solution; applying the solution onto a substrate and then removing the first solvent from the solution applied onto the substrate to obtain a phase-separated ultra-thin polymer film that has been phase-separated into a sea-island structure; and immersing the ultra-thin polymer film in a second solvent which is a good solvent for the polymer of the island parts but a poor solvent for a polymer other than the island parts to remove the island parts, thereby obtaining a porous ultra-thin polymer film.

摘要翻译： 本发明的目的是提供一种多孔超薄聚合物膜，以及一种生产该多孔超薄聚合物膜的方法。 本发明提供一种膜厚度为10nm-1000nm的多孔超薄聚合物膜。 此外，本发明提供一种多孔超薄聚合物膜的制造方法，其特征在于，包括以下任意比例将两种相互不混溶的聚合物溶解在第一溶剂中，得到溶液; 将溶液施加到基材上，然后从施加到基材上的溶液中除去第一溶剂，得到相分离成海岛结构的相分离超薄膜; 并将超薄聚合物膜浸渍在作为岛部分的聚合物的良溶剂的第二溶剂中，但除了岛部分以外的聚合物的不良溶剂以除去岛部分，从而获得多孔超薄聚合物 电影。

公开(公告)号：US20120064148A1

公开(公告)日：2012-03-15

申请号：US13255231

申请日：2010-03-10

申请人： Shinji Takeoka ,  Yousuke Obata ,  Satoru Nakagawa ,  Shinya Ohtsubo ,  Yuji Kawasaki

发明人： Shinji Takeoka ,  Yousuke Obata ,  Satoru Nakagawa ,  Shinya Ohtsubo ,  Yuji Kawasaki

IPC分类号： A61K9/127

CPC分类号： A61K9/1271

摘要： The present invention provides pH-responsive liposomes which are capable of holding a desired substance in an acidic pH environment and releasing the desired substance in a basic pH environment.The present invention uses pH-responsive liposomes comprising, as constituent lipids thereof, a cationic amphiphilic molecule and at least one of an anionic amphiphilic molecule and a twitterionic amphiphilic molecule, wherein the liposomes, when dispersed in an aqueous medium, have a positive zeta potential in an acidic environment where the dispersion has a pH of less than 6.5 and have a negative zeta potential in a basic environment where the dispersion has a pH of 8.5 or more.

摘要翻译： 本发明提供了能够在酸性pH环境中保持所需物质并在碱性pH环境中释放所需物质的pH响应性脂质体。 本发明使用pH响应性脂质体，其包含作为其构成脂质的阳离子两亲性分子和阴离子两亲分子和两性离子两亲分子中的至少一种，其中所述脂质体在分散在水性介质中时具有正的ζ电位 在分散体具有小于6.5的pH并且在分散体具有8.5或更高的pH的碱性环境中具有负ζ电位的酸性环境中。

公开(公告)号：US07887837B2

公开(公告)日：2011-02-15

申请号：US12087424

申请日：2007-01-05

申请人： Shinji Takeoka ,  Yousuke Okamura ,  Ippei Maekawa ,  Makoto Handa ,  Yasuo Ikeda

发明人： Shinji Takeoka ,  Yousuke Okamura ,  Ippei Maekawa ,  Makoto Handa ,  Yasuo Ikeda

IPC分类号： A61K9/127

CPC分类号： A61K31/7076 ,  A61K47/542 ,  A61K47/543 ,  A61K47/60 ,  A61K47/6911

摘要： The present invention provides a drug delivery material, which is a conjugate of 1) a drug-carrying molecular assembly, 2) a linker and 3) a substance that recognizes activated platelet, injury site of blood vessel and/or inflammatory tissue, and capable of efficiently delivering a drug to a desired site, during which the drug under delivery does not affect sites other than a desired site (hence, low possibility of causing side effects), which releases the drug only at the desired site without requiring an external means and allows the drug to exhibit an effect.

摘要翻译： 本发明提供药物递送材料，其是1）药物携带分子组合物的缀合物，2）接头和3）识别活化血小板，血管和/或炎性组织的损伤部位的物质，并且能够 有效地将药物递送到期望的部位，在此期间，药物在输送期间不会影响除期望部位以外的部位（因此，引起副作用的可能性很小），其仅在所需部位释放药物，而不需要外部手段 并允许药物表现出效果。

公开(公告)号：US20090220422A1

公开(公告)日：2009-09-03

申请号：US12087424

申请日：2007-01-05

申请人： Shinji Takeoka ,  Yousuke Okamura ,  Ippei Maekawa ,  Makoto Handa ,  Yasuo Ikeda

发明人： Shinji Takeoka ,  Yousuke Okamura ,  Ippei Maekawa ,  Makoto Handa ,  Yasuo Ikeda

IPC分类号： A61K49/00 ,  A61K9/127 ,  A61K31/70 ,  A61K38/39 ,  A61K31/60

CPC分类号： A61K31/7076 ,  A61K47/542 ,  A61K47/543 ,  A61K47/60 ,  A61K47/6911

摘要： The present invention provides a drug delivery material, which is a conjugate of 1) a drug-carrying molecular assembly, 2) a linker and 3) a substance that recognizes activated platelet, injury site of blood vessel and/or inflammatory tissue, and capable of efficiently delivering a drug to a desired site, during which the drug under delivery does not affect sites other than a desired site (hence, low possibility of causing side effects), which releases the drug only at the desired site without requiring an external means and allows the drug to exhibit an effect.

摘要翻译： 本发明提供药物递送材料，其是1）药物携带分子组合物的缀合物，2）接头和3）识别活化血小板，血管和/或炎性组织的损伤部位的物质，并且能够 有效地将药物递送到期望的部位，在此期间，药物在输送期间不会影响除期望部位以外的部位（因此，引起副作用的可能性很小），其仅在所需部位释放药物，而不需要外部手段 并允许药物表现出效果。