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31.发明授权公开(公告)号：US08445175B2
公开(公告)日：2013-05-21
申请号：US12308566
申请日：2007-06-15
CPC分类号： G03F7/091 , C08G63/19 , C08G63/672 , C08G63/6856 , G03F7/094 , G03F7/11
摘要： Disclosed is a lithographic composition for forming a resist underlayer film, which can be used as a lower layer antireflection film by which an exposure light striking on a photoresist formed on a semiconductor substrate is inhibited from being reflected from the substrate in a lithographic process of manufacturing semiconductor equipment, a planarization film for flattening a semiconductor substrate having a rugged surface used in order to fill in a hole formed on the semiconductor substrate, a film which prevents a photoresist from being contaminated by a substance generated from a semiconductor substrate during heating/burning, or the like. The lithographic composition for forming a resist underlayer comprises a polymer having a structure of formula (1): (where Y represents a C1-10 alkylene group or a C6-14 aromatic ring, provided that the alkylene group and the aromatic ring have one or more hydroxyl group(s) being not larger than the number of the replaceable hydrogen atom of the alkylene group and the aromatic ring); and a solvent.
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公开(公告)号：US20120251950A1
公开(公告)日：2012-10-04
申请号：US13516304
申请日：2010-12-06
申请人： Yusuke Horiguchi , Makiko Umezaki , Noriaki Fujitani , Hirokazu Nishimaki , Takahiro Kishioka , Takahiro Hamada
发明人： Yusuke Horiguchi , Makiko Umezaki , Noriaki Fujitani , Hirokazu Nishimaki , Takahiro Kishioka , Takahiro Hamada
CPC分类号： G03F7/091 , C08F12/24 , C08F212/14 , C08F220/56 , G03F7/038 , G03F7/30 , G03F7/322 , C08F2220/1858 , C08F220/58 , C08F2220/1891 , C08F2220/1833 , C08F2220/585
摘要： A composition for forming a resist underlayer film to be used in a lithography process, that includes: a polymer containing unit structures of Formula (1), Formula (2), and Formula (3): the polymer being a polymer in which the unit structure of Formula (1) has a ratio of mole number (a) within a range of 0.20≦a≦0.90, the unit structure of Formula (2) has a ratio of mole number (b) within a range of 0.05≦b≦0.60, and the unit structure of Formula (3) has a ratio of mole number (c) within a range of 0.001≦c≦0.40, when a total mole number of all unit structures constituting the polymer is 1.0, and the polymer having a weight average molecular weight of 3,000 to 100,000; a crosslinkable compound; a photoacid generator; and a solvent.
摘要翻译： 一种用于形成在光刻工艺中使用的抗蚀剂下层膜的组合物，其包括：含有式（1），式（2）和式（3）的单元结构的聚合物：聚合物是聚合物，其中单元 式（1）的结构的摩尔数（a）在0.20＆lt; 1EE的范围内; a＆nlE; 0.90，式（2）的单元结构的摩尔数（b）的比例在0.05＆lt; 1EE的范围内; （3）的单元结构，当构成聚合物的全部单元结构的总摩尔数为1.0时，其摩尔数（c）在0.001＆lt; 1lE; c＆nlE; 0.40的范围内， 聚合物，其重均分子量为3,000〜100,000; 可交联化合物; 光致酸发生器; 和溶剂。
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33.发明授权公开(公告)号：US07816067B2
公开(公告)日：2010-10-19
申请号：US11921790
申请日：2006-05-24
摘要： To provide a coating-type underlayer coating forming composition containing a naphthalene resin derivative.A coating-type underlayer coating forming composition for lithography comprising a compound of formula (1): wherein A is an organic group having an aromatic group, R1 is hydroxy group, an alkyl group, an alkoxy group, a halogen group, a thiol group, an amino group or an amide group, m1 is the number of A substituted on the naphthalene ring and is an integer of 1 to 6, m2 is the number of R1 substituted on the naphthalene ring and is an integer of 0 to 5, a sum of m1 and m2 (m1+m2) is an integer of 1 to 6, in cases where the sum is an integer other than 6, the reminder is hydrogen atom, and n is the number of repeating units ranging from 2 to 7000.
摘要翻译： 提供含有萘树脂衍生物的涂布型下层涂层形成组合物。 一种用于光刻的涂料型下层涂料组合物，其包含式（1）化合物：其中A为具有芳基的有机基团，R 1为羟基，烷基，烷氧基，卤素基团，硫醇基 氨基或酰胺基，m1是在萘环上取代的A的数，为1〜6的整数，m2为在萘环上取代的R 1的数，为0〜5的整数，a m1和m2的和（m1 + m2）为1〜6的整数，在和为6以外的整数的情况下，提醒为氢原子，n为2〜7000的重复单元数。
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34.发明授权Composition for forming underlayer coating for lithography containing epoxy compound and carboxylic acid compound 有权用于形成含有环氧化合物和羧酸化合物的光刻用底层涂料的组合物公开(公告)号：US07794919B2
公开(公告)日：2010-09-14
申请号：US10551130
申请日：2004-04-01
申请人： Takahiro Kishioka
发明人： Takahiro Kishioka
IPC分类号： G03F7/11 , C08G59/40 , H01L21/027
CPC分类号： G03F7/091 , C08G59/40 , Y10S438/952
摘要： There is provided an underlayer coating forming composition for lithography that is used in lithography process of manufacture of semiconductor device; and an underlayer coating having a high dry etching rate compared with photoresist. Concretely, it is a composition for forming an underlayer without use of crosslinking reaction by an strong acid catalyst, and an underlayer coating forming composition containing a component having an epoxy group (a polymer, a compound) and a component having a phenolic hydroxyl group, a carboxyl group, a protected carboxyl group or an acid anhydride structure (a polymer, a compound).
摘要翻译： 提供了用于制造半导体器件的光刻工艺中的用于光刻的底层涂层形成组合物; 以及与光致抗蚀剂相比具有高干蚀刻速率的底层涂层。 具体而言，作为不使用强酸性催化剂进行交联反应而形成底层的组合物和含有具有环氧基的成分（聚合物，化合物）和具有酚性羟基的成分的下层成膜组合物， 羧基，被保护的羧基或酸酐结构（聚合物，化合物）。
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35.发明申请Anti-Reflective Coating Forming Composition Containing Reaction Product of Isocyanuric Acid Compound with Benzoic Acid Compound 审中-公开含有异氰尿酸化合物与苯甲酸化合物的反应产物的防反射涂层组合物公开(公告)号：US20090117493A1
公开(公告)日：2009-05-07
申请号：US11992595
申请日：2005-09-27
IPC分类号： G03F7/20
CPC分类号： G03F7/091
摘要： There is provided anti-reflective coating forming composition containing a reaction product of an isocyanuric acid compound having two or three 2,3-epoxypropyl groups with a benzoic acid compound. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, can form a photoresist pattern having no footing at the lower part, and can use in lithography process by use of a light such as ArF excimer laser beam and F2 excimer laser beam, etc.
摘要翻译： 提供了含有具有两个或三个2,3-环氧丙基的异氰脲酸化合物与苯甲酸化合物的反应产物的抗反射涂层形成组合物。 由组合物得到的抗反射涂层对反射光具有很高的防止效果，不会与光致抗蚀剂混合，可以在下部形成没有底脚的光致抗蚀剂图案，并且可以在光刻工艺中使用诸如 ArF准分子激光束和F2准分子激光束等
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36.发明授权公开(公告)号：US07226721B2
公开(公告)日：2007-06-05
申请号：US10565968
申请日：2004-07-30
CPC分类号： G03F7/091 , Y10S430/106
摘要： There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a compound having a protected carboxyl group, a compound having a group capable of reacting with a carboxyl group and a solvent, and an underlayer coating forming composition comprising a compound having a group capable of reacting with a carboxyl group and a protected carboxyl group and a solvent.
摘要翻译： 提供了一种用于光刻的底层涂层形成组合物和与光致抗蚀剂相比具有高干蚀刻速率的下层涂层，并且不与用于制造半导体器件的光刻工艺中的光致抗蚀剂混合。 具体地说，它是一种下层涂层形成组合物，它包括具有被保护的羧基的化合物，具有与羧基反应的基团的化合物和一种溶剂，以及一种下层涂层形成组合物，该组合物包含具有能够与 羧基和保护的羧基和溶剂。
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公开(公告)号：US09436085B2
公开(公告)日：2016-09-06
申请号：US13516304
申请日：2010-12-06
申请人： Yusuke Horiguchi , Makiko Umezaki , Noriaki Fujitani , Hirokazu Nishimaki , Takahiro Kishioka , Takahiro Hamada
发明人： Yusuke Horiguchi , Makiko Umezaki , Noriaki Fujitani , Hirokazu Nishimaki , Takahiro Kishioka , Takahiro Hamada
IPC分类号： G03F7/09 , G03F7/30 , G03F7/32 , C08F12/24 , C08F212/14 , C08F220/56 , G03F7/038
CPC分类号： G03F7/091 , C08F12/24 , C08F212/14 , C08F220/56 , G03F7/038 , G03F7/30 , G03F7/322 , C08F2220/1858 , C08F220/58 , C08F2220/1891 , C08F2220/1833 , C08F2220/585
摘要： A composition for forming a resist underlayer film to be used in a lithography process, that includes: a polymer containing unit structures of Formula (1), Formula (2), and Formula (3): the polymer being a polymer in which the unit structure of Formula (1) has a ratio of mole number (a) within a range of 0.20≦a≦0.90, the unit structure of Formula (2) has a ratio of mole number (b) within a range of 0.05≦b≦0.60, and the unit structure of Formula (3) has a ratio of mole number (c) within a range of 0.001≦c≦0.40, when a total mole number of all unit structures constituting the polymer is 1.0, and the polymer having a weight average molecular weight of 3,000 to 100,000; a crosslinkable compound; a photoacid generator; and a solvent.
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公开(公告)号：US09340561B2
公开(公告)日：2016-05-17
申请号：US14345002
申请日：2012-08-28
申请人： Makiko Umezaki , Daisuke Sakuma , Taito Nishino , Takahiro Kishioka , Yoshiomi Hiroi , Shigeo Kimura , Tomoya Ohashi , Yuki Usui
发明人： Makiko Umezaki , Daisuke Sakuma , Taito Nishino , Takahiro Kishioka , Yoshiomi Hiroi , Shigeo Kimura , Tomoya Ohashi , Yuki Usui
IPC分类号： C07F7/08 , A61L27/28 , A61L27/54 , A61L29/08 , A61L29/16 , A61L31/08 , A61L31/16 , C09D5/16 , C07F7/18
CPC分类号： C07F7/081 , A61L27/28 , A61L27/54 , A61L29/08 , A61L29/16 , A61L31/08 , A61L31/16 , A61L2300/424 , C07F7/1804 , C09D5/1625
摘要： There is provided a novel organic silicon compound that can be used for a silane coupling agent. An organic silicon compound of Formula (1): (where A− is Formula (2) or Formula (3): E is Formula (4) or Formula (5): R1 and R2 are each independently a C1-5 alkyl group, R3 is a hydrogen atom or a methyl group, R4 and R5 are each independently a C1-5 alkyl group, m, n, and p are each independently an integer of 1 to 5, and q is an integer of 1 to 3).
摘要翻译： 提供了可用于硅烷偶联剂的新型有机硅化合物。 式（1）的有机硅化合物：其中A-是式（2）或式（3）：E是式（4）或式（5）：R 1和R 2各自独立地为C 1-5烷基， R3是氢原子或甲基，R4和R5各自独立地为C1-5烷基，m，n和p各自独立地为1〜5的整数，q为1〜3的整数）。
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公开(公告)号：US08940470B2
公开(公告)日：2015-01-27
申请号：US12451474
申请日：2008-05-14
CPC分类号： G03F7/0233 , G02B3/00 , G03F7/0005 , G03F7/38
摘要： A material for a microlens having heat resistance, high resolution and high light-extraction efficiency is provided. A positive resist composition comprises an alkali-soluble polymer containing a unit structure having an aromatic fused ring or a derivative thereof, and a compound having an organic group which undergoes photodecomposition to yield an alkali-soluble group. The positive resist composition has coating film properties of a refractive index at a wavelength of 633 nm of 1.6 or more and a transmittance at wavelengths of 400 to 730 nm of 80% or more. A pattern forming method comprises applying the positive resist composition, drying the composition, exposing the composition to light, and developing the composition.
摘要翻译： 提供了具有耐热性，高分辨率和高光提取效率的微透镜材料。 正型抗蚀剂组合物包含含有具有芳香稠合环或其衍生物的单元结构的碱溶性聚合物和具有经历光分解以产生碱溶性基团的有机基团的化合物。 正型抗蚀剂组合物具有在633nm的折射率为1.6以上的折射率和400〜730nm的波长的透射率为80％以上的涂膜性质。 图案形成方法包括施加正性抗蚀剂组合物，干燥组合物，使组合物曝光并显影组合物。
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40.发明申请公开(公告)号：US20140370182A1
公开(公告)日：2014-12-18
申请号：US14345002
申请日：2012-08-28
申请人： Makiko Umezaki , Daisuke Sakuma , Taito Nishino , Takahiro Kishioka , Yoshiomi Hiroi , Shigeo Kimura , Tomoya Ohashi , Yuki Usui
发明人： Makiko Umezaki , Daisuke Sakuma , Taito Nishino , Takahiro Kishioka , Yoshiomi Hiroi , Shigeo Kimura , Tomoya Ohashi , Yuki Usui
CPC分类号： C07F7/081 , A61L27/28 , A61L27/54 , A61L29/08 , A61L29/16 , A61L31/08 , A61L31/16 , A61L2300/424 , C07F7/1804 , C09D5/1625
摘要： There is provided a novel organic silicon compound that can be used for a silane coupling agent. An organic silicon compound of Formula (1): (where A− is Formula (2) or Formula (3): E is Formula (4) or Formula (5): R1 and R2 are each independently a C1-5 alkyl group, R3 is a hydrogen atom or a methyl group, R4 and R5 are each independently a C1-5 alkyl group, m, n, and p are each independently an integer of 1 to 5, and q is an integer of 1 to 3).
摘要翻译： 提供了可用于硅烷偶联剂的新型有机硅化合物。 式（1）的有机硅化合物：其中A-是式（2）或式（3）：E是式（4）或式（5）：R 1和R 2各自独立地为C 1-5烷基， R3是氢原子或甲基，R4和R5各自独立地为C1-5烷基，m，n和p各自独立地为1〜5的整数，q为1〜3的整数）。
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