-
公开(公告)号：US09023583B2
公开(公告)日：2015-05-05
申请号：US13879125
申请日：2011-10-07
申请人： Takahiro Kishioka , Daisuke Sakuma , Shigeo Kimura , Hirokazu Nishimaki , Tomoya Ohashi , Yuki Usui
发明人： Takahiro Kishioka , Daisuke Sakuma , Shigeo Kimura , Hirokazu Nishimaki , Tomoya Ohashi , Yuki Usui
CPC分类号： G03F7/0752 , C07F7/1804 , C08G77/28 , C09D183/08 , G03F7/0751 , G03F7/165 , G03F7/20 , G03F7/30
摘要： There is provided a composition for forming a monolayer or a multilayer on the substrate. A composition for forming a monolayer or a multilayer containing a silane compound of Formula (1A) or Formula (1B): [where R1s are independently a methyl group or an ethyl group; Xs are independently a C1-10 linking group; and Zs are independently a C1-10 alkyl group or a phenyl group optionally having a substituent, where X optionally contains at least one oxygen atom or sulfur atom in the main chain thereof, and when Z is an alkyl group, at least one hydrogen atom of the alkyl group is optionally substituted with a fluorine atom] and an organic solvent.
摘要翻译： 提供了在基材上形成单层或多层的组合物。 用于形成单层的组合物或含有式（1A）或式（1B）的硅烷化合物的多层：[其中R 1独立地是甲基或乙基; X独立地为C1-10连接基团; 并且Z独立地为C1-10烷基或任选具有取代基的苯基，其中X任选地在其主链中含有至少一个氧原子或硫原子，当Z为烷基时，至少一个氢原子 的烷基任选被氟原子取代]和有机溶剂。
-
2.发明申请公开(公告)号：US20140228488A1
公开(公告)日：2014-08-14
申请号：US14343923
申请日：2012-09-06
CPC分类号： C09J179/04 , C08G59/26 , C08G59/3236 , C08G73/06 , C08G73/0633 , C08G73/0638 , C08G73/0677 , C08K5/04 , C08K5/07 , C09D11/10 , C09D11/102 , C09J11/06 , C09J163/00 , G03F7/09 , G03F7/094 , G03F7/11 , H01L21/02118 , H01L21/02282 , H01L23/293 , H01L2924/0002 , H01L2924/00
摘要： There is provided a novel polymer, a composition containing the polymer, and a novel adhesive composition containing the polymer from which a cured film having desired properties is obtained. A polymer comprising a structural unit of Formula (1): wherein Q is a bivalent group, R1 is a C1-10 alkylene group, a C2-10 alkenylene group or C2-10 alkynylene group, a C6-14 arylene group, a C4-10 cyclic alkylene group, etc., or a polymer comprising a structural unit of Formula (6): wherein Q4 is an allyl group, a vinyl group, an epoxy group, or a glycidyl group, and R5 is a bivalent organic group having a main chain containing only carbon atom or at least one of oxygen atom, nitrogen atom and sulfur atom in addition to carbon atom, a composition comprising the polymer, and an adhesive composition comprising the polymer and a solvent.
摘要翻译： 提供了一种新型聚合物，含有该聚合物的组合物，以及含有聚合物的新型粘合剂组合物，由此得到具有所需性能的固化膜。 一种包含式（1）的结构单元的聚合物：其中Q是二价基团，R1是C1-10亚烷基，C2-10亚烯基或C2-10亚炔基，C6-14亚芳基，C4 -10环状亚烷基等，或包含式（6）的结构单元的聚合物：其中Q4是烯丙基，乙烯基，环氧基或缩水甘油基，R5是具有式 除了碳原子以外，仅含有碳原子或氧原子，氮原子和硫原子中的至少一个的主链，包含聚合物的组合物和包含该聚合物和溶剂的粘合剂组合物。
-
公开(公告)号：US08436339B2
公开(公告)日：2013-05-07
申请号：US12451730
申请日：2008-05-28
申请人： Shinichi Maeda , Takahiro Kishioka
发明人： Shinichi Maeda , Takahiro Kishioka
IPC分类号： H01L29/08
CPC分类号： H01L21/02118 , C08G59/182 , C08G73/0638 , C08G73/0644 , C08G73/065 , C08G73/0655 , C08L79/04 , H01L21/312 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/7869 , H01L51/0021 , H01L51/0036 , H01L51/0097 , H01L51/052 , H01L51/0529 , H01L51/102
摘要： There is provided a novel gate insulating film forming material in consideration of not only initial electric properties immediately after the production of a gate insulating film, but also electric properties after other steps are performed while producing a thin-film transistor using the gate insulating film, and even reliability in the electric properties of the produced element. A gate insulating film forming agent for a thin-film transistor comprising an oligomer compound or a polymer compound, both of which contain a repeating unit having a triazinetrione ring containing a hydroxyalkyl-containing group as a substituent on a nitrogen atom, and a solvent; a gate insulating film produced from the gate insulating film forming agent; a thin-film transistor having the gate insulating film; and a method for producing the gate insulating film or thin-film transistor.
摘要翻译： 考虑到栅极绝缘膜生产之后不仅初始电性能，而且在使用栅极绝缘膜制造薄膜晶体管之后执行其它步骤之后的电性能，提供了一种新型的栅极绝缘膜形成材料， 并且甚至产生的元件的电性能的可靠性。 包含低分子化合物或高分子化合物的薄膜晶体管的栅极绝缘膜形成剂，它们都含有具有在氮原子上含有羟基烷基的基团作为取代基的三嗪三酮环的重复单元和溶剂; 由栅极绝缘膜形成剂制成的栅极绝缘膜; 具有栅极绝缘膜的薄膜晶体管; 以及制造栅极绝缘膜或薄膜晶体管的方法。
-
公开(公告)号：US20120172557A1
公开(公告)日：2012-07-05
申请号：US13395336
申请日：2010-08-30
申请人： Takahiro Kishioka
发明人： Takahiro Kishioka
IPC分类号： C08F226/06 , G03F7/004
CPC分类号： G02B1/04 , C08F222/40 , C08F226/02 , G03F7/0233 , G03F7/40
摘要： There is provided a photosensitive resin composition having desired properties. A photosensitive resin composition comprising: a component (A) that is a copolymer including a structural unit of Formula (1) and at least one structural unit of Formula (2), and a component (B) that is a photosensitizer: (where two Xs are independently a hydrogen atom, a C1-5 alkyl group, a C5-6 cycloalkyl group, a phenyl group, or a benzyl group and Y is a hydrogen atom, a C1-5 alkyl group, a C5-6 cycloalkyl group, a phenyl group, or a benzyl group provided that each of a part or all of the hydrogen atoms in the alkyl group, the cycloalkyl group, the phenyl group, and the benzyl group is optionally substituted with a halogen atom, a carboxy group, a hydroxy group, an amino group, or a nitro group).
摘要翻译： 提供具有所需性质的感光性树脂组合物。 1.一种感光性树脂组合物，其特征在于，含有作为共聚物的成分（A），其包含式（1）的结构单元和式（2）的至少一个结构单元和作为光敏剂的成分（B） X独立地为氢原子，C1-5烷基，C5-6环烷基，苯基或苄基，Y为氢原子，C1-5烷基，C5-6环烷基， 苯基或苄基，条件是烷基，环烷基，苯基和苄基中的一部分或全部氢原子任选被卤素原子，羧基， 羟基，氨基或硝基）。
-
公开(公告)号：US20110227056A1
公开(公告)日：2011-09-22
申请号：US13131807
申请日：2009-11-26
申请人： Shinichi Maeda , Takahiro Kishioka
发明人： Shinichi Maeda , Takahiro Kishioka
CPC分类号： H01L51/052 , C07D239/60 , C07D403/06 , H01L21/02118 , H01L21/02282 , H01L21/28194 , H01L21/312 , H01L51/0541 , H01L51/0545
摘要： It is an object to provide a novel forming agent for a gate insulating film that not only provides high insulating properties for the gate insulating film but also takes account of the electric characteristics of a thin film transistor element. A forming agent for a gate insulating film of a thin film transistor characterized by comprising an oligomer compound or a polymer compound including a structural unit containing a pyrimidinetrione ring having a hydroxyalkyl-containing group as a substituent on a nitrogen atom; a gate insulating film formed by the forming agent; and a thin film transistor.
摘要翻译： 本发明的目的是提供一种用于栅极绝缘膜的新型成形剂，其不仅为栅极绝缘膜提供高绝缘性，而且还考虑了薄膜晶体管元件的电特性。 一种薄膜晶体管的栅极绝缘膜的成型剂，其特征在于包含低聚物化合物或包含含有在氮原子上具有含羟基烷基的基团作为取代基的嘧啶四酮环的结构单元的高分子化合物; 由形成剂形成的栅极绝缘膜; 和薄膜晶体管。
-
6.发明授权Acrylic polymer-containing gap fill material forming composition for lithography 有权含丙烯酸聚合物的间隙填充材料形成组合物用于光刻公开(公告)号：US08007979B2
公开(公告)日：2011-08-30
申请号：US10544129
申请日：2004-02-20
CPC分类号： G03F7/094 , G03F7/038 , Y10S430/109 , Y10S430/128
摘要： There is provided a gap fill material forming composition for lithography that is used in dual damascene process and is excellent in flattening property and fill property. Concretely, it is a gap fill material forming composition characterized in that the composition is used in manufacture of semiconductor device by a method comprising coating a photoresist on a semiconductor substrate having a hole with aspect ratio shown in height/diameter of 1 or more, and transferring an image to the semiconductor substrate by use of lithography process, and that comprises a polymer, a crosslinking agent and a solvent.
摘要翻译： 提供了一种用于光刻的间隙填充材料形成组合物，其用于双镶嵌工艺，并且具有优异的压平性能和填充性能。 具体地说，它是一种间隙填充材料形成组合物，其特征在于该组合物用于制造半导体器件，方法包括在具有高度/直径为1或更大的高宽比的孔的半导体衬底上涂覆光致抗蚀剂，以及 通过使用光刻工艺将图像转印到半导体衬底，并且包括聚合物，交联剂和溶剂。
-
公开(公告)号：US20100133518A1
公开(公告)日：2010-06-03
申请号：US12451730
申请日：2008-05-28
申请人： Shinichi Maeda , Takahiro Kishioka
发明人： Shinichi Maeda , Takahiro Kishioka
CPC分类号： H01L21/02118 , C08G59/182 , C08G73/0638 , C08G73/0644 , C08G73/065 , C08G73/0655 , C08L79/04 , H01L21/312 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/7869 , H01L51/0021 , H01L51/0036 , H01L51/0097 , H01L51/052 , H01L51/0529 , H01L51/102
摘要： There is provided a novel gate insulating film forming material in consideration of not only initial electric properties immediately after the production of a gate insulating film, but also electric properties after other steps are performed while producing a thin-film transistor using the gate insulating film, and even reliability in the electric properties of the produced element. A gate insulating film forming agent for a thin-film transistor comprising an oligomer compound or a polymer compound, both of which contain a repeating unit having a triazinetrione ring containing a hydroxyalkyl-containing group as a substituent on a nitrogen atom, and a solvent; a gate insulating film produced from the gate insulating film forming agent; a thin-film transistor having the gate insulating film; and a method for producing the gate insulating film or thin-film transistor.
摘要翻译： 考虑到栅极绝缘膜生产之后不仅初始电性能，而且在使用栅极绝缘膜制造薄膜晶体管之后执行其它步骤之后的电性能，提供了一种新型的栅极绝缘膜形成材料， 并且甚至产生的元件的电性能的可靠性。 包含低分子化合物或高分子化合物的薄膜晶体管的栅极绝缘膜形成剂，它们都含有具有在氮原子上含有羟基烷基的基团作为取代基的三嗪三酮环的重复单元和溶剂; 由栅极绝缘膜形成剂制成的栅极绝缘膜; 具有栅极绝缘膜的薄膜晶体管; 以及制造栅极绝缘膜或薄膜晶体管的方法。
-
8.发明授权Sulfonate-containing anti-reflective coating forming composition for lithography 有权含有磺酸盐的抗反射涂层组合物，用于光刻公开(公告)号：US07595144B2
公开(公告)日：2009-09-29
申请号：US11666080
申请日：2005-10-25
IPC分类号： G03F7/11
CPC分类号： G03F7/091 , C08G59/1433 , C08G59/1483 , C08G59/26 , C08G59/28 , Y10S438/952
摘要： There is provided an anti-reflective coating forming composition for lithography comprising a polymer compound, a crosslinking compound, a crosslinking catalyst, a sulfonate compound and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, has a higher dry etching rate compared with photoresists, can form a photoresist pattern having no footing at the lower part, and can use in lithography process by use of a light such as ArF excimer laser beam and F2 excimer laser beam, etc.
摘要翻译： 提供了一种用于光刻的抗反射涂层形成组合物，其包含高分子化合物，交联化合物，交联催化剂，磺酸盐化合物和溶剂。 由组合物获得的抗反射涂层对反射光具有很高的防止效果，不会与光致抗蚀剂混合，与光致抗蚀剂相比具有更高的干蚀刻速率，可以在下部形成没有底脚的光致抗蚀剂图案，并且可以使用 在光刻工艺中使用诸如ArF准分子激光束和F2准分子激光束等。
-
9.发明授权公开(公告)号：US07425399B2
公开(公告)日：2008-09-16
申请号：US10530349
申请日：2003-10-08
申请人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Nakayama , Yasuo Kawamura
发明人： Takahiro Kishioka , Ken-ichi Mizusawa , Tomoyuki Enomoto , Rikimaru Sakamoto , Keisuke Nakayama , Yasuo Kawamura
IPC分类号： G03C1/825 , C07D251/30 , C07D251/72
CPC分类号： H01L21/0276 , G03F7/038 , G03F7/091 , Y10S430/106
摘要： There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.
摘要翻译： 提供了一种用于形成用于抗反射涂层的抗反射涂层的组合物，其在用于制造半导体器件的波长处具有良好的吸收，其对光反射具有高保护效果，其具有高的干蚀刻速率 与光致抗蚀剂层相比。 具体地，用于形成抗反射涂层的组合物含有在氮原子上具有羟烷基结构作为取代基的三嗪三酮化合物，低聚物化合物或高分子化合物。
-
公开(公告)号：US20050175927A1
公开(公告)日：2005-08-11
申请号：US10520461
申请日：2003-07-11
IPC分类号： G03F7/11 , C08K5/00 , C08L61/24 , C08L101/00 , G03F7/09 , H01L21/027 , G03F7/00 , G03F7/004
CPC分类号： G03F7/091 , H01L21/0276 , Y10S430/151
摘要： There is provided a composition for forming anti-reflective coating containing a urea compound substituted by hydroxyalkyl group or alkoxyalkyl group, and preferably a light absorbing compound and/or a light absorbing resin; a method of forming a anti-reflective coating for a semiconductor device by use of the composition; and a process for manufacturing a semiconductor device by use of the composition. The composition according to the present invention exhibits a good light-absorption to a light having a wavelength used for manufacturing a semiconductor device. Therefore, the composition exerts a high protection effect against light reflection, and has a high dry etching rate compared with photoresist layers.
摘要翻译： 提供一种用于形成抗羟基烷基或烷氧基烷基取代的尿素化合物的抗反射涂层的组合物，优选光吸收性化合物和/或光吸收树脂; 通过使用该组合物形成用于半导体器件的抗反射涂层的方法; 以及使用该组合物制造半导体器件的方法。 根据本发明的组合物对具有用于制造半导体器件的波长的光表现出良好的光吸收。 因此，该组合物对光反射具有高保护效果，与光致抗蚀剂层相比具有高的干蚀刻速率。
-
-
-
-
-
-
-
-
-
搜索结果
61 条记录 (耗时 0.029 秒)
