摘要:
There is provided a novel organic silicon compound that can be used for a silane coupling agent. An organic silicon compound of Formula (1): (where A− is Formula (2) or Formula (3): E is Formula (4) or Formula (5): R1 and R2 are each independently a C1-5 alkyl group, R3 is a hydrogen atom or a methyl group, R4 and R5 are each independently a C1-5 alkyl group, m, n, and p are each independently an integer of 1 to 5, and q is an integer of 1 to 3).
摘要:
There is provided a novel organic silicon compound that can be used for a silane coupling agent. An organic silicon compound of Formula (1): (where A− is Formula (2) or Formula (3): E is Formula (4) or Formula (5): R1 and R2 are each independently a C1-5 alkyl group, R3 is a hydrogen atom or a methyl group, R4 and R5 are each independently a C1-5 alkyl group, m, n, and p are each independently an integer of 1 to 5, and q is an integer of 1 to 3).
摘要:
A material forms a pattern by applying a photosensitive composition to a base material and drying to form a photosensitive coating and performing exposure and development, and a method for forming the pattern. A photosensitive composition includes water-soluble organic particles, and a solvent, wherein the solvent is a poor solvent for the water-soluble organic particles. Preferably, the water-soluble organic particles of the photosensitive composition includes a polymer which contains a unit structure (A) for forming organic particles, a unit structure (B) for forming interparticle crosslinkage, and a unit structure (C) for imparting dispersibility, and the photosensitive composition further includes a photoacid generator. In addition, the water-soluble organic particles of the photosensitive composition includes a polymer which contains the unit structure (A) for forming organic particles, the unit structure (B) for forming interparticle crosslinkage, the unit structure (C) for imparting dispersibility, and a unit structure (D) having a photoacid generating group.
摘要:
A material forms a pattern by applying a photosensitive composition to a base material and drying to form a photosensitive coating and performing exposure and development, and a method for forming the pattern. A photosensitive composition includes water-soluble organic particles, and a solvent, wherein the solvent is a poor solvent for the water-soluble organic particles. Preferably, the water-soluble organic particles of the photosensitive composition includes a polymer which contains a unit structure (A) for forming organic particles, a unit structure (B) for forming interparticle crosslinkage, and a unit structure (C) for imparting dispersibility, and the photosensitive composition further includes a photoacid generator. In addition, the water-soluble organic particles of the photosensitive composition includes a polymer which contains the unit structure (A) for forming organic particles, the unit structure (B) for forming interparticle crosslinkage, the unit structure (C) for imparting dispersibility, and a unit structure (D) having a photoacid generating group.
摘要:
There is provided a composition for forming a monolayer or a multilayer on the substrate. A composition for forming a monolayer or a multilayer containing a silane compound of Formula (1A) or Formula (1B): [where R1s are independently a methyl group or an ethyl group; Xs are independently a C1-10 linking group; and Zs are independently a C1-10 alkyl group or a phenyl group optionally having a substituent, where X optionally contains at least one oxygen atom or sulfur atom in the main chain thereof, and when Z is an alkyl group, at least one hydrogen atom of the alkyl group is optionally substituted with a fluorine atom] and an organic solvent.
摘要:
There is provided a composition for forming a monolayer or a multilayer on the substrate. A composition for forming a monolayer or a multilayer containing a silane compound of Formula (1A) or Formula (1B): [where R1s are independently a methyl group or an ethyl group; Xs are independently a C1-10 linking group; and Zs are independently a C1-10 alkyl group or a phenyl group optionally having a substituent, where X optionally contains at least one oxygen atom or sulfur atom in the main chain thereof, and when Z is an alkyl group, at least one hydrogen atom of the alkyl group is optionally substituted with a fluorine atom] and an organic solvent.
摘要:
A composition for forming a photosensitive resist underlayer film and a method for forming a resist pattern. The composition for forming a photosensitive resist underlayer film includes a polymer having a structural unit of Formula (1), a compound having at least two vinyl ether groups, a photo-acid generator; and a solvent: where R1 is a hydrogen atom or a methyl group, R2 is a C1-4 alkyl group, and i is an integer of 0 to 4.
摘要:
A resist underlayer film forming composition used in a lithography process includes: a polymer (A) containing a unit structure having a hydroxy group, a unit structure having a carboxy group, or combination thereof; a crosslinkable compound (B) having at least two vinyl ether groups; a photoacid generator (C); a C4-20 fluoroalkylcarboxylic acid or a salt of the fluoroalkylcarboxylic acid (D); and a solvent (E). The polymer (A) includes a unit structure selected from unit structures of Formula (1), Formula (2), and Formula (3);
摘要:
A resist underlayer film forming composition used in a lithography process includes: a polymer (A) containing a unit structure having a hydroxy group, a unit structure having a carboxy group, or combination thereof; a crosslinkable compound (B) having at least two vinyl ether groups; a photoacid generator (C); a C4-20 fluoroalkylcarboxylic acid or a salt of the fluoroalkylcarboxylic acid (D); and a solvent (E). The polymer (A) includes a unit structure selected from unit structures of Formula (1), Formula (2), and Formula (3);
摘要:
There is provided an anti-reflective coating forming composition comprising a solid content and a solvent, wherein a proportion of sulfur atom in the solid content is 5 to 25 mass %. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, and can use in lithography process by use of a light having a short wavelength such as F2 excimer laser beam (wavelength 157 nm) or ArF excimer laser beam (wavelength 193 nm), etc.