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公开(公告)号:US20080283933A1
公开(公告)日:2008-11-20
申请号:US11803437
申请日:2007-05-15
申请人: Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
发明人: Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
IPC分类号: H01L29/78 , H01L21/31 , H01L21/336 , H01L23/58
CPC分类号: H01L21/3105 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/31612 , H01L21/321 , H01L21/76826 , H01L21/76832 , H01L21/76837
摘要: An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.
摘要翻译: 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷(TEOS)的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层,其中第一和第二工艺气体具有不同的氧与-TEOS比。
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公开(公告)号:US08759952B2
公开(公告)日:2014-06-24
申请号:US13358365
申请日:2012-01-25
申请人: Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
发明人: Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
IPC分类号: H01L23/58
CPC分类号: H01L21/3105 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/31612 , H01L21/321 , H01L21/76826 , H01L21/76832 , H01L21/76837
摘要: An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.
摘要翻译: 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷(TEOS)的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层,其中第一和第二工艺气体具有不同的氧与-TEOS比。
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公开(公告)号:US20140015031A1
公开(公告)日:2014-01-16
申请号:US13547741
申请日:2012-07-12
申请人: Ping-Pang Hsieh , Chih-Ming Lee , Yu-Jen Chen , Shiu-Ko JangJian
发明人: Ping-Pang Hsieh , Chih-Ming Lee , Yu-Jen Chen , Shiu-Ko JangJian
IPC分类号: H01L29/788 , H01L21/336
CPC分类号: H01L29/66825 , H01L29/40114 , H01L29/66575 , H01L29/7881 , H01L29/7883
摘要: An apparatus comprises a gate stack formed over a substrate, wherein the gate stack comprises a first gate structure, wherein a first dielectric layer is formed between the first gate structure and the substrate and a second gate structure stacked on the first gate structure, wherein a second dielectric layer is formed between the first gate structure and the second gate structure. The apparatus further comprises a first drain/source region and a first recess formed between a top surface of the first drain/source region and the second dielectric layer.
摘要翻译: 一种装置包括形成在衬底上的栅极堆叠,其中栅极堆叠包括第一栅极结构,其中在第一栅极结构和衬底之间形成第一电介质层,以及堆叠在第一栅极结构上的第二栅极结构,其中 在第一栅极结构和第二栅极结构之间形成第二介电层。 该装置还包括第一漏极/源极区域和形成在第一漏极/源极区域的顶表面和第二电介质层之间的第一凹部。
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公开(公告)号:US08114741B2
公开(公告)日:2012-02-14
申请号:US12779810
申请日:2010-05-13
申请人: Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
发明人: Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
IPC分类号: H01L21/336
CPC分类号: H01L21/3105 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/31612 , H01L21/321 , H01L21/76826 , H01L21/76832 , H01L21/76837
摘要: An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.
摘要翻译: 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷(TEOS)的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层,其中第一和第二工艺气体具有不同的氧与-TEOS比。
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公开(公告)号:US09379275B2
公开(公告)日:2016-06-28
申请号:US13436364
申请日:2012-03-30
申请人: Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
发明人: Miao-Cheng Liao , Jinn-Kwei Liang , Wen-Chieh Hsieh , Shiu-Ko JangJian , Hsiang Hsiang Ko , Ying-Lang Wang
IPC分类号: H01L31/18 , H01L31/103 , H01L27/146
CPC分类号: H01L31/1804 , H01L27/1462 , H01L27/1464 , H01L31/103 , Y02E10/547 , Y02P70/521
摘要: A method for reducing dark current in image sensors comprises providing a backside illuminated image sensor wafer, depositing a first passivation layer on a backside of the backside illuminated image sensor wafer, depositing a plasma enhanced passivation layer on the first passivation layer and depositing a second passivation layer on the plasma enhanced passivation layer.
摘要翻译: 一种用于减小图像传感器中的暗电流的方法包括提供背面照射的图像传感器晶片,在背面照射的图像传感器晶片的背面上沉积第一钝化层,在第一钝化层上沉积等离子体增强的钝化层并沉积第二钝化层 层上的等离子体增强钝化层。
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公开(公告)号:US08628998B2
公开(公告)日:2014-01-14
申请号:US13477897
申请日:2012-05-22
申请人: Yu-Ting Lin , Cheng-Jung Sung , Yu-Sheng Wang , Shiu-Ko JangJian , Wei-Ming You , Chih-Cherng Jeng , Ching-Hwanq Su
发明人: Yu-Ting Lin , Cheng-Jung Sung , Yu-Sheng Wang , Shiu-Ko JangJian , Wei-Ming You , Chih-Cherng Jeng , Ching-Hwanq Su
IPC分类号: H01L21/00
CPC分类号: H01L27/14687 , H01L21/268 , H01L27/14636 , H01L27/1464 , H01L27/14689
摘要: A method includes performing a grinding on a backside of a semiconductor substrate. An image sensor is disposed on a front side of the semiconductor substrate. An impurity is doped into a surface layer of the backside of the semiconductor substrate to form a doped layer. A multi-cycle laser anneal is performed on the doped layer.
摘要翻译: 一种方法包括在半导体衬底的背面进行研磨。 图像传感器设置在半导体衬底的前侧。 杂质掺杂到半导体衬底的背面的表面层中以形成掺杂层。 在掺杂层上进行多周期激光退火。
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公开(公告)号:US20100221887A1
公开(公告)日:2010-09-02
申请号:US12779810
申请日:2010-05-13
申请人: Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
发明人: Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
IPC分类号: H01L21/336
CPC分类号: H01L21/3105 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/31612 , H01L21/321 , H01L21/76826 , H01L21/76832 , H01L21/76837
摘要: An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.
摘要翻译: 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷(TEOS)的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层,其中第一和第二工艺气体具有不同的氧与-TEOS比。
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公开(公告)号:US20130171766A1
公开(公告)日:2013-07-04
申请号:US13477897
申请日:2012-05-22
申请人: Yu-Ting Lin , Cheng-Jung Sung , Yu-Sheng Wang , Shiu-Ko JangJian , Wei-Ming You , Chih-Cherng Jeng , Ching-Hwanq Su
发明人: Yu-Ting Lin , Cheng-Jung Sung , Yu-Sheng Wang , Shiu-Ko JangJian , Wei-Ming You , Chih-Cherng Jeng , Ching-Hwanq Su
IPC分类号: H01L31/18
CPC分类号: H01L27/14687 , H01L21/268 , H01L27/14636 , H01L27/1464 , H01L27/14689
摘要: A method includes performing a grinding on a backside of a semiconductor substrate. An image sensor is disposed on a front side of the semiconductor substrate. An impurity is doped into a surface layer of the backside of the semiconductor substrate to form a doped layer. A multi-cycle laser anneal is performed on the doped layer.
摘要翻译: 一种方法包括在半导体衬底的背面进行研磨。 图像传感器设置在半导体衬底的前侧。 杂质掺杂到半导体衬底的背面的表面层中以形成掺杂层。 在掺杂层上进行多周期激光退火。
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公开(公告)号:US20120119303A1
公开(公告)日:2012-05-17
申请号:US13358365
申请日:2012-01-25
申请人: Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
发明人: Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
CPC分类号: H01L21/3105 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/31612 , H01L21/321 , H01L21/76826 , H01L21/76832 , H01L21/76837
摘要: An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.
摘要翻译: 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷(TEOS)的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层,其中第一和第二工艺气体具有不同的氧与-TEOS比。
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公开(公告)号:US07741171B2
公开(公告)日:2010-06-22
申请号:US11803437
申请日:2007-05-15
申请人: Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
发明人: Shiu-Ko JangJian , Wan-Ting Huang , Yu-Jen Chien , Phil Sun
IPC分类号: H01L21/8238
CPC分类号: H01L21/3105 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/31612 , H01L21/321 , H01L21/76826 , H01L21/76832 , H01L21/76837
摘要: An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.
摘要翻译: 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷(TEOS)的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层,其中第一和第二工艺气体具有不同的氧与-TEOS比。
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