公开(公告)号：US08119426B2

公开(公告)日：2012-02-21

申请号：US12999478

申请日：2009-06-05

申请人： Takashi Kobayashi ,  Shuntaro Machida ,  Kunio Hashiba

发明人： Takashi Kobayashi ,  Shuntaro Machida ,  Kunio Hashiba

IPC分类号： H01L21/66 ,  H01L21/00

CPC分类号： H04R31/00 ,  B81B2201/0257 ,  B81B2207/053 ,  B81C1/00214

摘要： A manufacturing yield of a semiconductor device (capacitive micromachined ultrasonic transducer) is increased. A plurality of first chips 1 in which a plurality of cells each having functions of transmitting and receiving ultrasonic waves are formed on a front surface of a first semiconductor wafer are manufactured, and each of the first chips 1 is judged as a superior/inferior product, and then, the first semiconductor wafer is sigulated into a plurality of first chips 1. Next, a plurality of second chips 2 in which a wiring layer is formed on a front surface of a second semiconductor wafer are manufactured, and each of the second chips 2 is judged as a superior/inferior product, and then, the second semiconductor wafer is sigulated into a plurality of second chips 2. Next, the plurality of first chips 1 judged as the superior product are adjacently arranged on the front surface of the second chip 2 judged as the superior product in plane in a Y direction so that lower electrodes 5 of the adjacent first chips 1 are electrically connected with each other via a through electrode 6, a bump 8, and a wiring layer 7.

摘要翻译： 半导体器件（电容式微加工超声换能器）的制造产量增加。 制造在第一半导体晶片的前表面上形成多个具有发送和接收超声波功能的多个单元的多个第一芯片1，并且将第一芯片1判断为上/下产品 然后，第一半导体晶片被配置成多个第一芯片1.接着，制造在第二半导体晶片的前表面上形成有布线层的多个第二芯片2， 将芯片2判断为优劣产品，然后将第二半导体晶片投入多个第二芯片2.接下来，判断为优质产品的多个第一芯片1相邻布置在 第二芯片2在Y方向上被认为是平面上的优异产品，使得相邻的第一芯片1的下电极5经由通电极6，凸块8和 布线层7。

公开(公告)号：US20110272693A1

公开(公告)日：2011-11-10

申请号：US13144229

申请日：2010-01-06

申请人： Takashi Kobayashi ,  Shuntaro Machida

发明人： Takashi Kobayashi ,  Shuntaro Machida

IPC分类号： H01L29/66 ,  H01L21/66

CPC分类号： B06B1/0292

摘要： The manufacturing yield of semiconductor devices (CMUTs) is improved. Before a polyimide film serving as a protective film is formed, a membrane is repeatedly vibrated to evaluate the breakdown voltage between an upper electrode and a lower electrode, and the upper electrode of a defective CMUT cell whose breakdown voltage between the upper electrode and the lower electrode is reduced due to the repeated vibrations of the membrane is removed in advance to cut off the electrical connection with other normal CMUT cells. By this means, in a block RB or a channel RCH including the recovered CMUT cell RC, reduction in the breakdown voltage between the upper electrode and the lower electrode after the repeated vibrations of the membrane is prevented.

摘要翻译： 改善了半导体器件（CMUT）的制造成品率。 在形成用作保护膜的聚酰亚胺膜之前，膜被反复振动以评估上电极和下电极之间的击穿电压，以及上电极和下电极之间的击穿电压的缺陷CMUT电池的上电极 由于膜的重复振动预先被去除以切断与其他正常CMUT电池的电连接，电极被还原。 通过这种方式，在块RB或包括恢复的CMUT单元RC的通道RCH中，防止了在膜的重复振动之后上部电极和下部电极之间的击穿电压的降低。

公开(公告)号：US07923795B2

公开(公告)日：2011-04-12

申请号：US12121736

申请日：2008-05-15

申请人： Takashi Kobayashi ,  Shuntaro Machida

发明人： Takashi Kobayashi ,  Shuntaro Machida

IPC分类号： H01L29/82

CPC分类号： B06B1/0292 ,  G01N29/2406

摘要： A lower electrode is formed over a semiconductor substrate via an insulator film, first and second insulator films are formed to cover the lower electrode, an upper electrode is formed over the second insulator film, third to fifth insulator films are formed to cover the upper electrode and a void is formed between the first and second insulator films between the lower and upper electrodes. An ultrasonic transducer comprises the lower electrode, the first insulator film, the void, the second insulator film and the upper electrode. A portion of the first insulator film contacting with the lower electrode is made of silicon oxide, a portion of the second insulator film contacting with the upper electrode is made of silicon oxide and the first or second insulator film includes a silicon nitride film positioned between the upper and lower electrodes and not in contact with the upper and lower electrodes.

摘要翻译： 通过绝缘膜在半导体衬底上形成下电极，形成第一和第二绝缘膜以覆盖下电极，在第二绝缘膜上方形成上电极，形成第三至第五绝缘膜以覆盖上电极 并且在下电极和上电极之间的第一和第二绝缘膜之间形成空隙。 超声换能器包括下电极，第一绝缘膜，空隙，第二绝缘膜和上电极。 与下部电极接触的第一绝缘膜的一部分由氧化硅构成，与上部电极接触的第二绝缘膜的一部分由氧化硅构成，第一或第二绝缘膜包括位于 上下电极并不与上电极和下电极接触。

公开(公告)号：US07701110B2

公开(公告)日：2010-04-20

申请号：US11498872

申请日：2006-08-04

申请人： Hiroshi Fukuda ,  Shuntaro Machida

发明人： Hiroshi Fukuda ,  Shuntaro Machida

IPC分类号： H02N1/00

CPC分类号： B06B1/0292

摘要： A technique capable of obtaining an ultrasonic transducer at high sensitivity in which a plurality of ultrasonic oscillators M1 each comprising a lower electrode fixed above a substrate, a diaphragm opposed to the substrate with a cavity being put therebetween, and an upper electrode disposed to the diaphragm are arranged above one identical substrate to constitute an ultrasonic transducer and a concentric convex corrugated region having a center identical with the center for the diaphragm is disposed to the diaphragm in an outer side of the cavity exceeding 70% for the radius thereof.

摘要翻译： 一种能够以高灵敏度获得超声波换能器的技术，其中多个超声波振荡器M1各自包括固定在基板上的下电极，与其间具有空腔的基板相对的隔膜以及设置在隔膜上的上电极 布置在一个相同的基板之上以构成超声波换能器，并且具有与隔膜中心相同的中心的同心的凸形波纹状区域设置在空腔的外侧，对于其半径超过70％。

公开(公告)号：US20060070449A1

公开(公告)日：2006-04-06

申请号：US11237897

申请日：2005-09-29

申请人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

发明人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

IPC分类号： G01L9/00

CPC分类号： G01L9/0073

摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

摘要翻译： 提供了一种用于促进嵌入压力传感器的半导体器件的尺寸减小，性能改进和可靠性改进的方法。 在嵌入压力传感器的半导体装置中，最上部布线的一部分用作压力检测单元的下部电极。 形成在下电极上的氧化硅膜的一部分是空腔。 在氧化硅膜上形成的硅化钨膜上形成氮化硅膜。 氮化硅膜具有填充孔或孔的功能，并且抑制水分从外部浸入到嵌入压力传感器的半导体器件中。 氮化硅膜和硅化钨膜的叠层膜形成压力传感器的膜片。

公开(公告)号：US20050186801A1

公开(公告)日：2005-08-25

申请号：US11104441

申请日：2005-04-13

申请人： Shouochi Uno ,  Atsushi Maekawa ,  Takashi Yunogami ,  Kazutami Tago ,  Kazuo Nojiri ,  Shuntaro Machida ,  Takafumi Tokunaga

发明人： Shouochi Uno ,  Atsushi Maekawa ,  Takashi Yunogami ,  Kazutami Tago ,  Kazuo Nojiri ,  Shuntaro Machida ,  Takafumi Tokunaga

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/02126 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829 ,  H01L21/76835

摘要： In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.

摘要翻译： 在制造具有嵌入式互连结构的半导体集成电路器件的方法中，通过将导体膜嵌入形成在构成层间电介质膜的有机绝缘膜中的凹槽（例如沟槽或孔）中，并且包括有机硅氧烷作为 通过使有机绝缘膜在基于CF的气体/ N 2 / Ar气中进行等离子体干蚀刻来形成主要部件，凹槽，例如沟槽或孔，以便抑制 在凹陷的底部形成异常形状，在有机绝缘膜上形成光致抗蚀剂膜，然后用光致抗蚀剂膜作为蚀刻掩模形成凹部。

公开(公告)号：US09941817B2

公开(公告)日：2018-04-10

申请号：US13879439

申请日：2011-10-13

申请人： Taiichi Takezaki ,  Shuntaro Machida

发明人： Taiichi Takezaki ,  Shuntaro Machida

IPC分类号： H02N1/08 ,  A61B8/00 ,  B06B1/02 ,  G01N29/24 ,  H04R19/04

CPC分类号： H02N1/08 ,  A61B8/4483 ,  A61B8/4494 ,  B06B1/0292 ,  G01N29/2406 ,  H04R19/04

摘要： High transfer sound pressure and high reception sensitivity are realized, and reliability is improved in terms of long term operation, in a capacitive detector-type ultrasonic transducer (CMUT). The ultrasonic transducer, which has a lower electrode (201), a hollow portion (202) that is formed on the lower electrode and surrounded by insulating films (209,208), an upper electrode (205) that is formed on the hollow portion, and a plurality of insulating film projections (204) that are formed in the hollow portion (202), comprises a plurality of rigid members (203) that are formed on the hollow portion, either the lower electrode (201) and/or the upper electrode (205) is disposed in a position that does not overlap with the insulating film projections (204) when viewed from the upper surface by carving out the portion that overlaps with the insulating film projections (204), and the respective rigid members (203) are disposed such that a region is present that overlaps with the insulating film projections (204) when viewed from the upper surface.

公开(公告)号：US08753279B2

公开(公告)日：2014-06-17

申请号：US13386120

申请日：2010-08-11

申请人： Hiroki Tanaka ,  Shuntaro Machida

发明人： Hiroki Tanaka ,  Shuntaro Machida

IPC分类号： A61B8/00 ,  A61B8/14

CPC分类号： B06B1/0292

摘要： Spurious response resulting from a high-order vibration mode that occurs when the cell shape of a capacitive micro-machined ultrasonic transducer is anisotropic is reduced. Assuming that a ratio between a long direction (l) and a short direction (w) of a diaphragm forming a capacitive micro-machined ultrasonic transducer is a representative aspect ratio (l/w), the representative aspect ratio is set to a value at which a dip of 6 dB or greater would not be formed within a transmit and receive bandwidth of a probe. Alternatively, the representative aspect ratio is so set that there would be six or more vibration modes for which the value obtained by dividing the frequency of a vibration mode having an odd number of anti-nodes by a fundamental mode frequency would be 2 or less.

摘要翻译： 当电容式微加工的超声波换能器的电池形状是各向异性时，由高阶振动模式产生的杂散响应减小。 假定形成电容式微加工超声波振子的隔膜的长方向（l）与短路方向（w）之间的比率为代表性的纵横比（l / w），将代表性纵横比设定为 在探头的发射和接收带宽内不会形成6dB或更大的下降。 替代地，代表性纵横比被设置为将具有六个或更多个振动模式，通过将具有奇数个反节点的振动模式的频率除以基本模式频率而获得的值将为2或更小。

公开(公告)号：US20110316383A1

公开(公告)日：2011-12-29

申请号：US13201114

申请日：2010-02-23

申请人： Shuntaro Machida ,  Takashi Kobayashi

发明人： Shuntaro Machida ,  Takashi Kobayashi

IPC分类号： H02N1/00 ,  H05K3/02

CPC分类号： B06B1/0292 ,  B81C1/00158 ,  B81C1/00182 ,  B81C1/00214 ,  B81C1/00476 ,  B81C1/00531 ,  B81C1/00611 ,  B81C2201/0104 ,  B81C2201/0107 ,  B81C2201/0109 ,  C09K13/00 ,  C23F4/00 ,  H01L21/30604 ,  H01L29/84 ,  Y10T29/49156

摘要： Disclosed is an art for a capacitive micromachined ultrasonic transducer (CMUT), which suppresses deformation in a cavity, non-uniformity in the thickness of an insulating film enclosing the cavity, and deterioration in the flatness of the surface profile of a membrane, even when the bottom electrode of the ultrasonic transducer is electrically connected from the bottom of the bottom electrode. The ultrasonic transducer is provided with: a bottom electrode (306); an electric connection part (304) which is connected to the bottom electrode from the bottom of the bottom electrode; a first insulating film which is formed so as to cover the bottom electrode; a cavity (308) which is formed on the first insulating film so as to overlap the bottom electrode when seen from above; a second insulating film which is formed so as to cover the cavity (308); and a top electrode (310) which is formed on the second insulating film so as to overlap the cavity (308) when seen from above. The electric connection part (304) to the bottom electrode (306) is positioned so as to not overlap the cavity (308) when seen from above.

摘要翻译： 公开了一种电容微加工超声波换能器（CMUT）的技术，其抑制空腔中的变形，包围空腔的绝缘膜的厚度不均匀，以及膜的表面轮廓的平坦度的劣化，即使当 超声波换能器的底部电极从底部电极的底部电连接。 所述超声波换能器设置有：底部电极（306）; 电连接部（304），其从所述底部电极的底部连接到所述底部电极; 形成为覆盖底部电极的第一绝缘膜; 形成在第一绝缘膜上以便从上方观察时与底部电极重叠的空腔（308）; 形成为覆盖空腔（308）的第二绝缘膜; 以及当从上方观察时，形成在第二绝缘膜上以与空腔（308）重叠的顶部电极（310）。 当从上方观察时，到底部电极（306）的电连接部分（304）被定位成不与空腔（308）重叠。

公开(公告)号：US07451656B2

公开(公告)日：2008-11-18

申请号：US11878243

申请日：2007-07-23

申请人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

发明人： Natsuki Yokoyama ,  Shuntaro Machida ,  Yasushi Goto

IPC分类号： G01L9/00 ,  G01L9/16

CPC分类号： G01L9/0073

摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

摘要翻译： 提供了一种用于促进嵌入压力传感器的半导体器件的尺寸减小，性能改进和可靠性改进的方法。 在嵌入压力传感器的半导体装置中，最上部布线的一部分用作压力检测单元的下部电极。 形成在下电极上的氧化硅膜的一部分是空腔。 在氧化硅膜上形成的硅化钨膜上形成氮化硅膜。 氮化硅膜具有填充孔或孔的功能，并且抑制水分从外部浸入到嵌入压力传感器的半导体器件中。 氮化硅膜和硅化钨膜的叠层膜形成压力传感器的膜片。