公开(公告)号：US20080225678A1

公开(公告)日：2008-09-18

申请号：US12128788

申请日：2008-05-29

申请人： Hyoung-soo KO ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

发明人： Hyoung-soo KO ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

IPC分类号： G11B7/00

CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

公开(公告)号：US20080116926A1

公开(公告)日：2008-05-22

申请号：US11861417

申请日：2007-09-26

申请人： Hyoung-soo KO ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park

发明人： Hyoung-soo KO ,  Ju-hwan Jung ,  Seung-bum Hong ,  Chul-min Park

IPC分类号： G01R31/02 ,  H01C17/00

CPC分类号： G01Q60/30 ,  G01Q80/00 ,  H01C13/00 ,  Y10T29/49082

摘要： Provided are a semiconductor probe having a resistive tip and a method of fabricating the semiconductor probe. The semiconductor probe includes a resistive tip which is doped with a first impurity, and of which an apex portion is doped with a low concentration of a second impurity of opposite polarity to the first impurity, wherein first and second semiconductor electrode regions doped with a high concentration of the second impurity is formed on slopes of the resistive tip; a dielectric layer formed on the resistive tip; an electric field shield which is formed on the dielectric layer, and forms a plane together with the dielectric layer on the apex portion of the resistive tip; and a cantilever having an end on which the resistive tip is located.

摘要翻译： 提供了具有电阻尖端的半导体探针和制造半导体探针的方法。 半导体探针包括掺杂有第一杂质的电阻尖端，并且其顶点部分掺杂有与第一杂质相反极性的低浓度第二杂质，其中掺杂高的第一和第二半导体电极区 第二杂质的浓度形成在电阻尖端的斜面上; 形成在电阻尖端上的电介质层; 形成在电介质层上的电场屏蔽层，与电阻顶端的顶点上的电介质层一起形成平面; 以及具有电阻尖端所在的端部的悬臂。

公开(公告)号：US20070042522A1

公开(公告)日：2007-02-22

申请号：US11498095

申请日：2006-08-03

申请人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L21/00

CPC分类号： G11B9/1418 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q70/16 ,  G01Q80/00

摘要： A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.

摘要翻译： 一种制造具有自对准金属屏蔽的电阻式探头的方法。 该方法包括在衬底的电阻端上顺序地形成第一绝缘层，金属屏蔽和第二绝缘层; 蚀刻第二绝缘层以在电阻区域上暴露金属屏蔽; 蚀刻暴露的金属屏蔽; 并蚀刻第一绝缘层以暴露电阻区域。

公开(公告)号：US20070040116A1

公开(公告)日：2007-02-22

申请号：US11448723

申请日：2006-06-08

申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Seung-bum Hong ,  Hong-sik Park

IPC分类号： G12B21/02

CPC分类号： G01Q70/16 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q80/00 ,  G11B9/02 ,  G11B9/1409 ,  Y10S977/861

摘要： A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.

摘要翻译： 提供具有低纵横比的电阻尖端和制造半导体探针的方法的半导体探针。 半导体探针包括电阻尖端和悬臂，其具有阻挡尖端所在的端部。 掺杂有第一杂质的电阻尖端包括形成在电阻尖端的峰处的电阻区，并且轻掺杂有与第一杂质极性相反的第二杂质，以及形成在电阻尖端的倾斜表面上的第一和第二半导体电极区 并重掺杂第二杂质。 电阻尖端的高度小于电阻尖端的半径。 因此，提高了半导体探针的空间分辨率。

公开(公告)号：US20060157440A1

公开(公告)日：2006-07-20

申请号：US11322340

申请日：2006-01-03

申请人： Ju-hwan Jung ,  Hyung-cheol Shin ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Ju-hwan Jung ,  Hyung-cheol Shin ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： C23F1/00 ,  B44C1/22 ,  G01N23/00

CPC分类号： G01Q70/16 ,  G01Q70/14 ,  G01Q80/00 ,  G11B9/1409

摘要： A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor regions formed on sloped sides thereof and heavily doped with the second impurity. The semiconductor probe includes the resistive tip, a cantilever having an end on which the resistive tip is disposed, a dielectric layer disposed on the cantilever and covering the resistive region, and a metal shield disposed on the dielectric layer and having an opening formed at a position corresponding to the resistive region.

摘要翻译： 具有电阻尖端的半导体探针和制造半导体探针的方法。 掺杂有第一杂质的电阻尖端包括在其峰上形成的电阻区，并且轻掺杂具有与第一杂质极性相反的第二杂质，以及形成在其倾斜侧上并且重掺杂有第二杂质的第一和第二半导体区 。 半导体探针包括电阻尖端，悬臂具有设置有电阻尖端的端部，设置在悬臂上并覆盖电阻区域的电介质层，以及设置在电介质层上的金属屏蔽层， 位置对应于电阻区域。

公开(公告)号：US20060145806A1

公开(公告)日：2006-07-06

申请号：US11320898

申请日：2005-12-30

申请人： Sung-dong Kim ,  Eun-sik Kim ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Dong-ki Min ,  Hong-sik Park ,  Seung-bum Hong

发明人： Sung-dong Kim ,  Eun-sik Kim ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Dong-ki Min ,  Hong-sik Park ,  Seung-bum Hong

IPC分类号： H01F5/00

CPC分类号： H03K19/16 ,  H01L43/08

摘要： A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.

公开(公告)号：US20060060779A1

公开(公告)日：2006-03-23

申请号：US11219732

申请日：2005-09-07

申请人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

发明人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

IPC分类号： G21K7/00

CPC分类号： G11B9/1409 ,  G01Q60/30 ,  Y10S977/875 ,  Y10S977/878 ,  Y10S977/879

摘要： A semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist layer orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist layer on the substrate to cover a portion of the first photoresist layer and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresist layers; and removing the first and second photoresist layers, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.

摘要翻译： 具有电阻尖端的半导体探针及其制造方法。 该方法包括在掺杂有第一杂质的衬底上形成条形掩模层，以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙，以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂层，并且蚀刻所述掩模层使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂层以覆盖所述第一光致抗蚀剂层的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂层覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂层，以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分，形成具有半四棱锥形形状的电阻尖端。

公开(公告)号：US20070047290A1

公开(公告)日：2007-03-01

申请号：US11500890

申请日：2006-08-09

申请人： Seung-bum Hong ,  Jin-gyoo Yoo ,  Ju-hwan Jung ,  Simon Buehlmann

发明人： Seung-bum Hong ,  Jin-gyoo Yoo ,  Ju-hwan Jung ,  Simon Buehlmann

IPC分类号： G11C11/22

CPC分类号： G11C11/22 ,  B82Y10/00 ,  H01L27/11502 ,  H01L27/11507 ,  H01L51/0048

摘要： An information storage device includes a ferroelectric layer having a first surface and a second surface opposite the first surface. A common electrode layer is formed on the first surface of the ferroelectric layer. At least two conductive track layers separated from each other are positioned on the second surface of the ferroelectric layer. A conductive roller that has two opposite ends supported by the conductive track layers is provided. The conductive roller is movable along a conductive track. A ferromagnetic layer creates a magnetic field on the conductive roller.

摘要翻译： 信息存储装置包括具有第一表面和与第一表面相对的第二表面的铁电层。 在铁电层的第一表面上形成公共电极层。 彼此分离的至少两个导电轨迹层位于铁电层的第二表面上。 提供具有由导电轨道层支撑的两个相对端的导电辊。 导电辊可沿着导电轨迹移动。 铁磁层在导电辊上产生磁场。

公开(公告)号：US07440302B2

公开(公告)日：2008-10-21

申请号：US11500890

申请日：2006-08-09

申请人： Seung-bum Hong ,  Jin-gyoo Yoo ,  Ju-hwan Jung ,  Simon Buehlmann

发明人： Seung-bum Hong ,  Jin-gyoo Yoo ,  Ju-hwan Jung ,  Simon Buehlmann

IPC分类号： G11C11/18 ,  G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： G11C11/22 ,  B82Y10/00 ,  H01L27/11502 ,  H01L27/11507 ,  H01L51/0048

摘要： An information storage device includes a ferroelectric layer having a first surface and a second surface opposite the first surface. A common electrode layer is formed on the first surface of the ferroelectric layer. At least two conductive track layers separated from each other are positioned on the second surface of the ferroelectric layer. A conductive roller that has two opposite ends supported by the conductive track layers is provided. The conductive roller is movable along a conductive track. A ferromagnetic layer creates a magnetic field on the conductive roller.

摘要翻译： 信息存储装置包括具有第一表面和与第一表面相对的第二表面的铁电层。 在铁电层的第一表面上形成公共电极层。 彼此分离的至少两个导电轨迹层位于铁电层的第二表面上。 提供具有由导电轨道层支撑的两个相对端的导电辊。 导电辊可沿着导电轨迹移动。 铁磁层在导电辊上产生磁场。

公开(公告)号：US08523555B2

公开(公告)日：2013-09-03

申请号：US13621204

申请日：2012-09-15

申请人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

发明人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

IPC分类号： B29C59/00

CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

摘要翻译： 提供了纳米压印母版及其制造方法。 该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。