Exposure apparatus, exposure method, and device manufacturing method
    32.
    发明授权
    Exposure apparatus, exposure method, and device manufacturing method 失效
    曝光装置,曝光方法和装置制造方法

    公开(公告)号:US06614504B2

    公开(公告)日:2003-09-02

    申请号:US09819631

    申请日:2001-03-29

    IPC分类号: G03B2752

    摘要: An exposure apparatus of the present invention provides a mask having a first space formed by a protection member, which protects a pattern formation area on a mask substrate, and a frame, which supports the protection member, inside a second space, and transfers the pattern of the mask provided in the second space onto a substrate by using an energy beam from a light source. The apparatus has a gas replacement chamber which replaces gas in the first space with a predetermined gas, which the energy beam passes through, while maintaining a predetermined pressure in the first space.

    摘要翻译: 本发明的曝光装置提供了一种掩模,其具有由保护部件形成的第一空间,该保护部件保护掩模基板上的图案形成区域和在第二空间内支撑保护部件的框架,并且将图案 通过使用来自光源的能量束将设置在第二空间中的掩模涂覆到基板上。 该装置具有一个气体置换室,它用第一空间中的气体代替能量束通过的预定气体,同时保持在第一空间中的预定压力。

    Exposure method and apparatus
    33.
    发明授权
    Exposure method and apparatus 失效
    曝光方法和装置

    公开(公告)号:US5902716A

    公开(公告)日:1999-05-11

    申请号:US708580

    申请日:1996-09-05

    IPC分类号: G03F7/09 G03F7/20 H01L21/027

    摘要: After a photoresist is applied onto a wafer, a contrast enhancement material (CEM) layer is applied onto this photoresist. A pattern is projected through this CEM layer onto the photoresist. Next, this CEM layer is removed from the photoresist and thereafter a new CEM layer is again applied onto the photoresist. Another pattern is projected through this new CEM layer onto the photoresist, whereby the photoresist is exposed in accordance with a composite pattern of the two patterns. This composite pattern can surpass the resolution limit of projection optical system.

    摘要翻译: 在将光致抗蚀剂施加到晶片上之后,将对比度增强材料(CEM)层施加到该光致抗蚀剂上。 通过该CEM层将图案投射到光致抗蚀剂上。 接下来,将该CEM层从光致抗蚀剂中除去,然后将新的CEM层再次施加到光致抗蚀剂上。 通过这个新的CEM层将另一种图案投影到光致抗蚀剂上,由此根据两种图案的复合图案曝光光致抗蚀剂。 该复合图案可以超过投影光学系统的分辨率极限。

    Microlithography projection-exposure masks, and methods and apparatus
employing same
    34.
    发明授权
    Microlithography projection-exposure masks, and methods and apparatus employing same 失效
    微光投影曝光掩模,以及使用其的方法和装置

    公开(公告)号:US5851707A

    公开(公告)日:1998-12-22

    申请号:US899909

    申请日:1997-07-24

    IPC分类号: G03F7/20 H01L21/027 G03F9/00

    摘要: Methods and apparatus are disclosed for microlithographically exposing a photosensitive substrate comprising single-exposure areas and multiple-exposure areas. After exposing the substrate, line widths in the single-exposure areas are substantially the same as line widths in the multiple-exposure areas. Also disclosed are masks comprising a first mask pattern used to expose the single-exposure areas once and a plurality of other mask patterns for exposing the multiple-exposure areas a predetermined number of times. Each of the other mask patterns allows a lower intensity of illumination light flux to be distributed to the multiple-exposure areas per exposure of the substrate than allowed by the first mask pattern. Consequently, the average intensity of illumination-light flux distributed to the single-exposure area after one exposure is substantially equal to the average intensity of illumination-light flux distributed to the multiple-exposure areas after a predetermined number of exposures of such areas.

    摘要翻译: 公开了用于微光刻曝光包括单一曝光区域和多曝光区域的感光衬底的方法和装置。 在曝光衬底之后,单个曝光区域中的线宽度与多个曝光区域中的线宽基本上相同。 还公开了包括用于暴露单次曝光区域一次的第一掩模图案和用于将多个曝光区域暴露预定次数的多个其它掩模图案的掩模。 每个其它掩模图案允许每个曝光的衬底比第一掩模图案允许的更低强度的照明光通量分布到多个曝光区域。 因此,在一次曝光之后分配到单一曝光区域的照明光通量的平均强度基本上等于在这些区域的预定曝光次数之后分配给多个曝光区域的照明光通量的平均强度。

    Device and method for wavelength conversion and BBO crystal for
wavelength conversion
    35.
    发明授权
    Device and method for wavelength conversion and BBO crystal for wavelength conversion 失效
    用于波长转换的装置和方法以及用于波长转换的BBO晶体

    公开(公告)号:US5552926A

    公开(公告)日:1996-09-03

    申请号:US492355

    申请日:1995-06-19

    IPC分类号: G02F1/37 G02F1/35

    CPC分类号: G02F1/37

    摘要: Laser light radiated from a laser device 12 enters a resonator 16, and an electric field applied to a BBO crystal 14 inside the resonator 16 modulates the resonance frequency of the resonator 16. The BBO crystal 14 has a modulation electrode 32 and a feedback electrode 34, and a photodetector 18 detects laser light modulated by the BBO crystal 14. A signal in proportion to an error in resonance frequency obtained from the photodetector 18 causes an electric field to be applied to the BBO crystal 14 via the electrode 32 to change the resonance length. Negative feedback control is thus provided to the resonance frequency of the resonator 16 which is determined by the electric field applied to the BBO crystal 14 to substantially eliminate error, thereby synchronizing the resonator 16.

    摘要翻译: 从激光装置12照射的激光进入谐振器16,并且施加到谐振器16内部的BBO晶体14的电场调制谐振器16的谐振频率.BBO晶体14具有调制电极32和反馈电极34 并且光检测器18检测由BBO晶体14调制的激光。与从光电检测器18获得的谐振频率的误差成比例的信号使得经由电极32向BBO晶体14施加电场以改变谐振 长度。 因此,通过由施加到BBO晶体14的电场确定的谐振器16的谐振频率提供负反馈控制,以基本上消除误差,从而使谐振器16同步。

    Nonlinear optical device
    36.
    发明授权
    Nonlinear optical device 失效
    非线性光学器件

    公开(公告)号:US5359617A

    公开(公告)日:1994-10-25

    申请号:US47982

    申请日:1993-04-19

    摘要: A multi-quantum well structure with a large second order optical nonlinearity and transparent at short wavelengths of up to 350 nm. is described. Alternating insulator and semiconductor layers are grown on a substrate to form a multi-quantum well structure, such that the potential function for electrons in the semiconductor layers is asymmetric in a direction normal to the substrate. Sub-bands of electrons in the conduction band lead to a large optical nonlinearity with efficient second harmonics generation, and is obtained by an appropriate selection of the width and shape of the well. The structure, preferably packaged on the same substrate of a laser diode, is used as an on-chip source of blue light.

    摘要翻译: 具有大二阶光学非线性并且在高达350nm的短波长下是透明的多量子阱结构。 被描述。 交替的绝缘体和半导体层在衬底上生长以形成多量子阱结构,使得半导体层中的电子的潜在功能在垂直于衬底的方向上是不对称的。 导带中的电子的子带导致具有有效的二次谐波产生的大的光学非线性,并且通过适当选择阱的宽度和形状来获得。 优选地封装在激光二极管的相同基板上的结构被用作蓝光的片上源。

    Exposure apparatus and device fabricating method
    37.
    发明授权
    Exposure apparatus and device fabricating method 有权
    曝光装置和装置制造方法

    公开(公告)号:US08253921B2

    公开(公告)日:2012-08-28

    申请号:US11364075

    申请日:2006-03-01

    IPC分类号: G03B27/52

    摘要: An exposure apparatus including a projection optical system that projects an image of a mask onto a substrate held by a stage, and an atmosphere forming mechanism for forming a specific gas atmosphere between the projection optical system and the stage, wherein the atmosphere forming mechanism has a cushioning part that softens the force caused by the stage or the substrate making contact with the atmosphere forming mechanism, and that suppresses the transmission of that force to the projection optical system.

    摘要翻译: 一种曝光装置,包括将掩模的图像投影到由载物台保持的基板上的投影光学系统和在投影光学系统和台之间形成特定气体气氛的气氛形成机构,其中,所述气氛形成机构具有 缓冲部件,其使由台阶或与基板形成机构接触的基板产生的力变软,并抑制该力传递到投影光学系统。

    Pattern forming method and apparatus, exposure method and apparatus, and device manufacturing method and device
    39.
    发明授权
    Pattern forming method and apparatus, exposure method and apparatus, and device manufacturing method and device 有权
    图案形成方法和装置,曝光方法和装置以及装置的制造方法和装置

    公开(公告)号:US08089616B2

    公开(公告)日:2012-01-03

    申请号:US12648648

    申请日:2009-12-29

    申请人: Soichi Owa

    发明人: Soichi Owa

    IPC分类号: G03B27/32 G01B11/00

    摘要: During a period after starting exposure to a plurality of shot areas subject to exposure on a wafer until completing the exposure, a light via a slit pair arranged on a stage that holds the wafer, of illumination light via a pattern generating device, is received, and information on a positional relation between an illumination light and the stage (and hence a positional relation between the illumination light and the wafer) is detected. With this operation, even if the information on the positional relation between the illumination light and the wafer varies due to some reason, information on the variation can be detected while performing the exposure to the plurality of shot areas. Accordingly, high-precision exposure can be achieved in an exposure operation, by considering this detection results.

    摘要翻译: 在开始曝光到在晶片上曝光的多个照射区域直到完成曝光之前的期间,接收经由图案生成装置经由经由经由经由图案生成装置保持晶片的台阶上的狭缝对的照明光的光, 并且检测关于照明光和舞台之间的位置关系的信息(因此照明光和晶片之间的位置关系)。 通过该操作,即使关于照明光和晶片之间的位置关系的信息由于某些原因而变化,也可以在对多个拍摄区域进行曝光的同时检测关于变化的信息。 因此,通过考虑该检测结果,可以在曝光操作中实现高精度的曝光。