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31.发明申请METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A MELT 审中-公开在MELT表面上实现持续的各向异性晶体生长的方法公开(公告)号：US20130213296A1
公开(公告)日：2013-08-22
申请号：US13398874
申请日：2012-02-17
IPC分类号： C30B13/00
CPC分类号： C30B15/14 , C30B15/002 , C30B15/06 , C30B29/06
摘要： A method of horizontal ribbon growth from a melt includes forming a leading edge of the ribbon using radiative cooling on a surface of the melt, drawing the ribbon in a first direction along the surface of the melt, and removing heat radiated from the melt in a region adjacent the leading edge of the ribbon at a heat removal rate that is greater than a heat flow through the melt into the ribbon.
摘要翻译： 从熔体生长水平带的方法包括使用辐射冷却在熔体的表面上形成带的前缘，沿着熔体的表面沿着第一方向拉伸带，并且从熔体中散出的热量去除 该区域以比通过熔体进入带状物的热流大的除热速率与带的前缘相邻。
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公开(公告)号：US07998224B2
公开(公告)日：2011-08-16
申请号：US12580719
申请日：2009-10-16
IPC分类号： B01J6/00
CPC分类号： C30B11/003 , C30B11/001 , C30B28/06 , C30B29/02 , C30B29/06 , C30B29/08 , C30B29/403 , C30B29/64 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10S588/90 , Y10T117/1024 , Y10T117/1092
摘要： A melt of a material is cooled and a sheet of the material is formed in the melt. This sheet is transported, cut into at least one segment, and cooled in a cooling chamber. The material may be Si, Si and Ge, Ga, or GaN. The cooling is configured to prevent stress or strain to the segment. In one instance, the cooling chamber has gas cooling.
摘要翻译： 将材料的熔体冷却，并在熔体中形成一片材料。 将该片材运输，切割成至少一个片段，并在冷却室中冷却。 该材料可以是Si，Si和Ge，Ga或GaN。 冷却配置为防止应力或应变。 在一种情况下，冷却室具有气体冷却。
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公开(公告)号：US20100050686A1
公开(公告)日：2010-03-04
申请号：US12487119
申请日：2009-06-18
CPC分类号： C30B11/003 , C01B33/037 , C30B11/001 , C30B28/06 , C30B29/02 , C30B29/06 , C30B29/08 , C30B29/406 , C30B29/60
摘要： An apparatus to purify a melt is disclosed. A first portion of a melt in a chamber is frozen in a first direction. A fraction of the first portion is melted in the first direction. A second portion of the melt remains frozen. The melt flows from the chamber and the second portion is removed from the chamber. The freezing concentrates solutes in the melt and second portion. The second portion may be a slug with a high solute concentration. This system may be incorporated into a sheet forming apparatus with other components such as, for example, pumps, filters, or particle traps.
摘要翻译： 公开了一种净化熔体的设备。 室中的熔体的第一部分在第一方向上被冷冻。 第一部分的一部分在第一方向熔化。 熔体的第二部分保持冷冻。 熔体从腔室流出，第二部分从腔室中移出。 冷冻浓缩物溶解在熔体和第二部分中。 第二部分可以是高溶质浓度的塞子。 该系统可以结合到具有其它部件例如泵，过滤器或颗粒捕集器的片材成形设备中。
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34.发明授权Clamping and de-clamping semiconductor wafers on a J-R electrostatic chuck having a micromachined surface by using force delay in applying a single-phase square wave AC clamping voltage 有权在具有微加工表面的J-R静电卡盘上夹紧和去夹紧半导体晶片，通过在施加单相方波交流钳位电压时使用力延迟公开(公告)号：US07072166B2
公开(公告)日：2006-07-04
申请号：US10661180
申请日：2003-09-12
申请人： Shu Qin , Peter L. Kellerman
发明人： Shu Qin , Peter L. Kellerman
IPC分类号： H01H1/00
CPC分类号： H01L21/6833
摘要： The present invention is directed to a method and a system for clamping a wafer to a J-R electrostatic chuck using a single-phase square wave AC clamping voltage. The method comprises determining a single-phase square wave clamping voltage for the J-R electrostatic chuck, wherein the determination is based, at least in part, on a minimum residual clamping force associated with the wafer and the electrostatic chuck and a surface topography of a leaky dielectric layer associated therewith. The wafer is placed on the electrostatic chuck; and the determined clamping voltage is applied to the electrostatic chuck, therein electrostatically clamping the wafer to the electrostatic chuck, wherein at least the minimum residual clamping force is maintained during a polarity switch of the single-phase square wave clamping voltage. The determination of the surface topography comprises a first gap and a second gap between the wafer and the electrostatic chuck and an island area ratio, wherein a difference in RC time constants associated with the respective first gap and second gap is provided such that at least the minimum residual clamping force is maintained during the polarity switch. Upon removal of the square wave clamping voltage, the de-clamping time is substantially reduced, and corresponds to the pulse width of the square wave clamping voltage.
摘要翻译： 本发明涉及一种使用单相方波交流钳位电压将晶片夹持到J-R静电卡盘的方法和系统。 该方法包括确定用于JR静电卡盘的单相方波钳位电压，其中所述确定至少部分地基于与晶片和静电卡盘相关联的最小剩余夹持力和泄漏的表面形貌 与之相关的电介质层。 将晶片放置在静电卡盘上; 并且将确定的钳位电压施加到静电卡盘，其中将晶片静电夹持到静电卡盘，其中在单相方波钳位电压的极性开关期间至少保持最小的剩余钳位力。 表面形貌的确定包括晶片和静电卡盘之间的第一间隙和第二间隙以及岛面积比，其中提供与相应的第一间隙和第二间隙相关联的RC时间常数的差异，使得至少 在极性开关期间维持最小的剩余夹紧力。 在去除方波钳位电压时，去夹紧时间大大降低，并且对应于方波钳位电压的脉冲宽度。
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公开(公告)号：US06458430B1
公开(公告)日：2002-10-01
申请号：US09469661
申请日：1999-12-22
IPC分类号： C23C1448
CPC分类号： H01J37/32412 , C23C14/042 , C23C14/48 , H01J37/32174 , H01J37/32311 , H01J37/32422 , H01J37/32871 , H01L21/2236 , H01L21/266
摘要： A method for use with a plasma immersion ion implantations systems wherein a substrate W having a patterned photoresist P thereon is implanted. The method includes ionizing a first gas in a chamber 12 to produce electrically inactive ions and reacting the electrically active ions with the photoresist P to produce outgassing 64. The outgassed material 64 is continuously evacuated until outgassing is substantially completed. The method further includes ionizing a second gas to produce electrically active ions and implanting a positively charged species of the electrically active ions into the substrate. Also disclosed is a method for curing the photoresist prior to ion implantation. A gas is ionized in the chamber 12 to produce positively and electrons. The electrons are first attracted to a substrate in the chamber having patterned photoresist P thereon for hardening the photoresist. The positively charged ions are then implanted into substrate W wherein photoresist outgassing is substantially prevented.
摘要翻译： 一种用于等离子体浸没离子注入系统的方法，其中植入其上具有图案化光致抗蚀剂P的基底W。 该方法包括电离室12中的第一气体以产生电惰性离子并使电活性离子与光致抗蚀剂P反应以产生除气64.将脱气的材料64连续排空，直至基本完成除气。 该方法还包括电离第二气体以产生电活性离子并将带电荷的电活性离子种类植入衬底中。 还公开了一种在离子注入之前固化光致抗蚀剂的方法。 气体在室12中被电离以产生正电子。 电子首先被吸引到其上具有图案化光致抗蚀剂P的腔室中的衬底上，以硬化光致抗蚀剂。 然后将带正电荷的离子注入衬底W中，其中基本上防止了光致抗蚀剂的除气。
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36.发明授权
公开(公告)号：US5909031A
公开(公告)日：1999-06-01
申请号：US924969
申请日：1997-09-08
IPC分类号： G21K5/04 , H01J37/02 , H01J37/20 , H01J37/317 , H01L21/265
CPC分类号： H01J37/026 , H01J2237/31701
摘要： A plasma-enhanced electron shower (62) for an ion implantation system (10) is provided, including a target (64) provided with a chamber (84) at least partially defined by a replaceable graphite liner (82). A filament assembly (67) attached to the target generates and directs a supply of primary electrons toward a surface (118) provided by the graphite liner, which is biased to a low negative voltage of up to -10V (approximately -6V) to insure that secondary electrons emitted therefrom as a result of impacting primary electrons have a uniform low energy. The filament assembly (67) includes a filament (68) for thermionically emitting primary electrons; a biased (-300V) filament electrode (70) for focusing the emitted primary electrons, and a grounded extraction aperture (72) for extracting the focused primary electrons toward the graphite surface (118). A gas nozzle (77) attached to the target (64) introduces into the chamber a supply of gas molecules to be ionized by the primary electrons. The direction of the nozzle is set with respect to the filament assembly (67) to maximize the ionization rate of the gas molecules.
摘要翻译： 提供了一种用于离子注入系统（10）的等离子体增强型电子淋浴（62），其包括设置有至少部分由可更换石墨衬垫（82）限定的室（84）的靶（64）。 连接到目标的灯丝组件（67）产生并引导朝向由石墨衬垫提供的表面（118）的一次电子供应，所述表面被偏压到高达-10V（约-6V）的低负电压以确保 由于冲击一次电子而发射的二次电子具有均匀的低能量。 灯丝组件（67）包括用于热离子发射一次电子的灯丝（68） 用于聚焦发射的一次电子的偏置（-300V）灯丝电极（70）和用于将聚焦的一次电子朝向石墨表面（118）提取的接地的提取孔（72）。 附着在靶（64）上的气体喷嘴（77）将通过一次电子离子化的气体分子的供给引入室内。 相对于灯丝组件（67）设置喷嘴的方向以最大化气体分子的电离速率。
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公开(公告)号：US09567691B2
公开(公告)日：2017-02-14
申请号：US12487119
申请日：2009-06-18
IPC分类号： C01B33/02 , C30B11/00 , C01B33/037 , C30B28/06 , C30B29/02 , C30B29/06 , C30B29/08 , C30B29/40 , C30B29/60
CPC分类号： C30B11/003 , C01B33/037 , C30B11/001 , C30B28/06 , C30B29/02 , C30B29/06 , C30B29/08 , C30B29/406 , C30B29/60
摘要： An apparatus to purify a melt is disclosed. A first portion of a melt in a chamber is frozen in a first direction. A fraction of the first portion is melted in the first direction. A second portion of the melt remains frozen. The melt flows from the chamber and the second portion is removed from the chamber. The freezing concentrates solutes in the melt and second portion. The second portion may be a slug with a high solute concentration. This system may be incorporated into a sheet forming apparatus with other components such as, for example, pumps, filters, or particle traps.
摘要翻译： 公开了一种净化熔体的设备。 室中的熔体的第一部分在第一方向上被冷冻。 第一部分的一部分在第一方向熔化。 熔体的第二部分保持冷冻。 熔体从腔室流出，第二部分从腔室中移出。 冷冻浓缩物溶解在熔体和第二部分中。 第二部分可以是高溶质浓度的塞子。 该系统可以结合到具有其它部件例如泵，过滤器或颗粒捕集器的片材成形设备中。
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公开(公告)号：US08064071B2
公开(公告)日：2011-11-22
申请号：US12403200
申请日：2009-03-12
申请人： Christopher A. Rowland , Peter L. Kellerman , Frank Sinclair , Julian G. Blake , Nicholas P. T. Bateman
发明人： Christopher A. Rowland , Peter L. Kellerman , Frank Sinclair , Julian G. Blake , Nicholas P. T. Bateman
IPC分类号： G01B11/14
CPC分类号： G01B21/12
摘要： A sheet measurement apparatus has a sheet disposed in a melt. The measurement system uses a beam to determine a dimension of the sheet. This dimension may be, for example, height or width. The beam may be, for example, collimated light, a laser, x-rays, or gamma rays. The production of the sheet may be altered based on the measurements.
摘要翻译： 片材测量装置具有设置在熔体中的片材。 测量系统使用光束来确定纸张的尺寸。 该尺寸可以是例如高度或宽度。 光束可以是例如准直光，激光，X射线或γ射线。 可以基于测量来改变片材的生产。
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公开(公告)号：US20110271897A1
公开(公告)日：2011-11-10
申请号：US13039789
申请日：2011-03-03
IPC分类号： C30B15/06
CPC分类号： C30B11/007 , C03B29/08 , C30B15/06 , C30B29/06 , C30B29/08 , Y10T117/1044 , Y10T117/1048 , Y10T117/1068
摘要： The embodiments herein relate to a sheet production apparatus. A vessel is configured to hold a melt of a material and a cooling plate is disposed proximate the melt. This cooling plate configured to form a sheet of the material on the melt. A pump is used. In one instance, this pump includes a gas source and a conduit in fluid communication with the gas source. In another instance, this pump injects a gas into a melt. The gas can raise the melt or provide momentum to the melt.
摘要翻译： 本文的实施例涉及片材生产设备。 容器构造成容纳材料的熔体，并且冷却板设置在熔体附近。 该冷却板构造成在熔体上形成材料片。 使用泵。 在一种情况下，该泵包括气体源和与气体源流体连通的导管。 在另一种情况下，该泵将气体注入熔体中。 气体可以提高熔体或为熔体提供动量。
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公开(公告)号：US07800082B2
公开(公告)日：2010-09-21
申请号：US11276128
申请日：2006-02-15
IPC分类号： H01J37/317
CPC分类号： H01J37/05 , H01J37/141 , H01J37/1472 , H01J37/3171 , H01J2237/0042 , H01J2237/057 , H01J2237/141 , H01J2237/142 , H01J2237/1508 , H01J2237/152 , H01J2237/31701 , H01J2237/31705
摘要： An electromagnet and related ion implanter system including active field containment are disclosed. The electromagnet provides a dipole magnetic field within a tall, large gap with minimum distortion and degradation of strength. In one embodiment, an electromagnet for modifying an ion beam includes: a ferromagnetic box structure including six sides; an opening in each of a first side and a second opposing side of the ferromagnetic box structure for passage of the ion beam therethrough; and a plurality of current-carrying wires having a path along an inner surface of the ferromagnetic box structure, the inner surface including the first side and the second opposing side and a third side and a fourth opposing side, wherein the plurality of current-carrying wires are positioned to pass around each of the openings of the first and second opposing sides.
摘要翻译： 公开了一种包括活性场容纳的电磁体和相关离子注入机系统。 电磁铁在高大的间隙内提供偶极磁场，具有最小的变形和强度的降低。 在一个实施例中，用于修改离子束的电磁体包括：包括六个边的铁磁盒结构; 所述铁磁盒结构的第一侧和第二相对侧中的每一个中的开口用于使所述离子束通过其中; 以及多个载流线，其具有沿铁磁箱结构的内表面的路径，内表面包括第一侧和第二相对侧，以及第三侧和第四相对侧，其中多个载流 电线定位成绕过第一和第二相对侧的每个开口。
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