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31.发明授权公开(公告)号：US07414881B2
公开(公告)日：2008-08-19
申请号：US11547123
申请日：2005-03-24
IPC分类号： G11C11/00
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , G11C11/15 , H01F13/00 , H01F41/303 , H01L43/08
摘要： A magnetization direction control method for controlling magnetization directions of first to third ferromagnetic layers (11-13) within a synthetic antiferromagnet structure (10A) having the first to the third ferromagnetic layers (11-13) and first and second non-magnetic layers (21, 22) interposed therebetween, without coupling antiferromagnetic material. The magnetization direction control method is composed of steps of (a) applying an external magnetic field HE to the synthetic antiferromagnet structure (10A) so as to direct the magnetizations of the first to third ferromagnetic layers in the same direction, and (b) reducing the external magnetic field to reverse the magnetization of one or some of the first to third ferromagnetic layers (11-13). The synthetic antiferromagnet structure (10A) is configured so that the magnetization of the first ferromagnetic layer (11) is reversed more easily than magnetizations of the other ferromagnetic layers in a state in which the magnetizations of the first to third ferromagnetic layers (11-13) are directed in the same direction.
摘要翻译： 一种用于控制具有第一至第三铁磁层（11-13）和第一和第二非磁性层（11-13）的合成反铁磁体结构（10A）内的第一至第三铁磁层（11-13）的磁化方向的磁化方向控制方法， （21,22），而不耦合反铁磁材料。 磁化方向控制方法包括以下步骤：（a）向合成的反铁磁体结构（10A）施加外部磁场H E，以便将第一至第三铁磁层的磁化引导到 相同的方向，和（b）减小外部磁场以反转第一至第三铁磁层（11-13）中的一个或一些的磁化。 合成反铁磁体结构（10A）被配置为使得第一铁磁层（11）的磁化在第一至第三铁磁性层（11〜11）的磁化的状态下比其他铁磁性层的磁化更容易反转， 13）指向相同的方向。
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公开(公告)号：US20080094880A1
公开(公告)日：2008-04-24
申请号：US11661205
申请日：2005-08-26
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , H01L27/228 , H01L43/08
摘要： A magneto-resistance element includes a free layer, a fixed layer and a non-magnetic layer interposed between the free layer and the fixed layer. The free layer has a first magnetic layer, a second magnetic layer, a third magnetic layer, a first non-magnetic layer interposed between the first magnetic layer and the second magnetic layer, and a second non-magnetic layer interposed between the second magnetic layer and the third magnetic layer. The first magnetic layer, the second magnetic layer and the third magnetic layer are coupled such that spontaneous magnetizations have a helical structure.
摘要翻译： 磁阻元件包括置于自由层和固定层之间的自由层，固定层和非磁性层。 自由层具有第一磁性层，第二磁性层，第三磁性层，介于第一磁性层和第二磁性层之间的第一非磁性层，以及介于第二磁性层之间的第二非磁性层 和第三磁性层。 第一磁性层，第二磁性层和第三磁性层被耦合，使得自发磁化具有螺旋结构。
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公开(公告)号：US07301829B2
公开(公告)日：2007-11-27
申请号：US10541645
申请日：2003-12-26
IPC分类号： G11C5/14
CPC分类号： G11C11/15
摘要： A semiconductor memory device in which information is written into a storage element by flowing current. The semiconductor memory device has a shortened write speed and reduced power consumption by preventing parasitic capacitors from prolonging the time required for a write current to reach a predetermined value. The semiconductor memory device includes storage elements for storing information, a constant current source for writing information into the storage element by flowing current, and a boost circuit for charging parasitic capacitors by a time when an amount of a current flowed by the constant current source reaches an amount of a current required to write information into the storage element, at a predetermined position related to the storage element.
摘要翻译： 通过流动电流将信息写入存储元件的半导体存储器件。 通过防止寄生电容器延长写入电流达到预定值所需的时间，半导体存储器件具有缩短的写入速度和降低的功耗。 半导体存储器件包括用于存储信息的存储元件，用于通过流动电流将信息写入存储元件的恒定电流源，以及当恒定电流源流过的电流达到的时间的用于对寄生电容器充电的升压电路 在与存储元件相关的预定位置处将信息写入存储元件所需的电流量。
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34.发明授权Semiconductor memory device having a voltage-controlled-oscillator-based readout circuit 有权具有基于压控振荡器的读出电路的半导体存储器件公开(公告)号：US07292471B2
公开(公告)日：2007-11-06
申请号：US11384920
申请日：2006-03-20
IPC分类号： G11C11/15
CPC分类号： G11C13/004 , G11C7/06 , G11C11/16 , G11C11/1673 , G11C13/0061 , G11C2013/0047 , G11C2013/0054 , G11C2013/0057 , G11C2207/066
摘要： By first readout, the current input from a selected cell is converted by a preamplifier and a VCO into pulses of a frequency inversely proportionate to the current value, and the number of the pulses within a preset time interval is counted by a counter 5 so as to be stored in a readout value register. A selected cell is then written to one of two storage states, and second readout is then carried out. The storage state of the selected cell is verified by comparing a count value of the counter for the second readout, a count value for the first readout as stored in a readout value register and a reference value stored in a reference value register to one another. By the use of the VCO, the integrating capacitor for the current or the generation of a reference pulse may be eliminated.
摘要翻译： 通过第一读出，来自所选单元的电流输入由前置放大器和VCO转换成与当前值成反比的频率的脉冲，并且通过计数器5对预设时间间隔内的脉冲数进行计数，以便 存储在读出值寄存器中。 然后将选定的单元写入两个存储状态之一，然后执行第二次读出。 通过将存储在读出值寄存器中的第一次读出的计数值和存储在参考值寄存器中的参考值彼此进行比较来验证所选单元的存储状态。 通过使用VCO，可以消除用于电流或产生参考脉冲的积分电容器。
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公开(公告)号：US20070201168A1
公开(公告)日：2007-08-30
申请号：US11547123
申请日：2005-03-24
IPC分类号： G11B5/33
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , G11C11/15 , H01F13/00 , H01F41/303 , H01L43/08
摘要： There is provided a magnetization direction control method for controlling magnetization directions of first to third ferromagnetic layers (11-13) within a synthetic antiferromagnet structure (10A) having the first to the third ferromagnetic layers (11-13) and first and second non-magnetic layers (21, 22) interposed therebetween, without coupling antiferromagnetic material. The magnetization direction control method is composed of steps of (a) applying an external magnetic field HE to the synthetic antiferromagnet structure (10A) so as to direct the magnetizations of the first to third ferromagnetic layers in the same direction, and (b) reducing the external magnetic field to reverse the magnetization of one or some of the first to third ferromagnetic layers (11-13). The synthetic antiferromagnet structure (10A) is configured so that the magnetization of the first ferromagnetic layer (11) is reversed more easily than magnetizations of the other ferromagnetic layers in a state in which the magnetizations of the first to third ferromagnetic layers (11-13) are directed in the same direction.
摘要翻译： 提供了一种用于控制具有第一至第三铁磁层（11-13）的合成反铁磁体结构（10A）内的第一至第三铁磁层（11-13）的磁化方向的磁化方向控制方法，以及第一和第二非铁磁层 - 磁性层（21,22），其间没有耦合反铁磁材料。 磁化方向控制方法包括以下步骤：（a）向合成的反铁磁体结构（10A）施加外部磁场H E，以便将第一至第三铁磁层的磁化引导到 相同的方向，和（b）减小外部磁场以反转第一至第三铁磁层（11-13）中的一个或一些的磁化。 合成反铁磁体结构（10A）被配置为使得第一铁磁层（11）的磁化在第一至第三铁磁性层（11〜11）的磁化的状态下比其他铁磁性层的磁化更容易反转， 13）指向相同的方向。
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公开(公告)号：US07099184B2
公开(公告)日：2006-08-29
申请号：US10523198
申请日：2003-07-28
申请人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Hisao Matsutera , Atsushi Kamijo , Kenichi Shimura , Kaoru Mori
发明人： Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura , Hisao Matsutera , Atsushi Kamijo , Kenichi Shimura , Kaoru Mori
CPC分类号： G11C11/16
摘要： An improved magnetic random access memory (MRAM) has two sets of signal lines where each set is substantially perpendicular to the other, and memory cells located at the intersections of the signal lines. Each memory cell has a magneto-resistant element containing a magnetization layer whose magnetic characteristics change depending on the intensity of the magnetic field applied. A desired magnetic field can be applied to any cell by supplying appropriate write currents to the signal lines intersecting at that cell. The relationship between applied magnetic fields, two different threshold function values, and four different magnetic fields that result at each cell is disclosed. Better performance, namely, improved selectivity and a more stable write operation, results.
摘要翻译： 改进的磁随机存取存储器（MRAM）具有两组信号线，每组信号线基本上垂直于另一组信号线，存储器单元位于信号线的交点处。 每个存储单元具有包含磁化层的磁阻元件，该磁化层的磁特性根据施加的磁场的强度而变化。 可以通过向与该单元相交的信号线提供适当的写入电流而将期望的磁场施加到任何单元。 公开了施加的磁场，两个不同阈值函数值之间的关系，以及在每个单元处产生的四个不同的磁场。 更好的性能，即提高选择性和更稳定的写入操作，结果。
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37.发明授权公开(公告)号：US06678187B2
公开(公告)日：2004-01-13
申请号：US10046811
申请日：2002-01-15
IPC分类号： G11C1100
CPC分类号： G11C11/16
摘要： A semiconductor memory apparatus using tunnel magnetic resistance elements comprises a plurality of cell arrays. When data is read from a cell in one of the cell array, a word line connected to the cell is connected to a voltage source, a bit line connected to the cell is connected to an input of a sense amplifier, word lines in the cell array concerned except for the word line connected to the cell and bit lines in the cell array concerned except for the bit line connected to the cell are isolated. A subtracter subtracts an offset current which is generated in another cell array from a current flowing from the bit line connected the cell. An integrator integrates the result of the subtraction. A comparator, a read current value register, and a reference value register performs self-reference reading method on the result of the integration.
摘要翻译： 使用隧道磁阻元件的半导体存储器件包括多个单元阵列。 当从单元阵列之一中的单元读取数据时，连接到单元的字线连接到电压源，连接到单元的位线连接到读出放大器的输入端，单元中的字线 除了连接到单元的字线和除了连接到单元的位线之外的单元阵列中的位线之外，阵列被隔离。 减法器从从连接单元的位线流出的电流中减去在另一个单元阵列中产生的偏移电流。 积分器整合减法的结果。 比较器，读取电流值寄存器和参考值寄存器对积分的结果执行自参考读取方法。
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38.发明授权Magnetic random access memory and operating method of magnetic random access memory 有权磁随机存取存储器和磁随机存取存储器的操作方法公开(公告)号：US07773405B2
公开(公告)日：2010-08-10
申请号：US12308062
申请日：2007-06-01
IPC分类号： G11C11/00
CPC分类号： G11C11/1659 , G11C11/1655 , G11C11/1675
摘要： A magnetic random access memory includes: a first and second wirings, a plurality of third wirings, a plurality of memory cells and a terminating unit. The first and second wirings extend in a Y direction. The plurality of third wirings extends in an X direction. The memory cell is provided correspondingly to an intersection between the first and second wirings and the third wiring. The terminating unit is provided between the plurality of memory cells and connected to the first and second wirings. The memory cell includes transistors and a magnetoresistive element. The transistors are connected in series between the first and second wirings and controlled based on a signal of the third wiring. The magnetoresistive element is connected to a wiring through which the transistors are connected. At a time of a writing operation, when the write current 1w is supplied from one of the first and second wiring to the other through the transistors, the terminating unit grounds the other.
摘要翻译： 磁性随机存取存储器包括：第一和第二布线，多个第三布线，多个存储单元和终端单元。 第一和第二布线沿Y方向延伸。 多个第三配线沿X方向延伸。 对应于第一和第二布线和第三布线之间的交叉点设置存储单元。 终端单元设置在多个存储单元之间并连接到第一和第二布线。 存储单元包括晶体管和磁阻元件。 晶体管串联连接在第一和第二布线之间，并根据第三布线的信号进行控制。 磁阻元件连接到晶体管连接到的布线。 在写入操作时，当写入电流1w通过晶体管从第一和第二布线中的一个提供给另一个时，端接单元接地。
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公开(公告)号：US20100177558A1
公开(公告)日：2010-07-15
申请号：US12376925
申请日：2007-07-13
CPC分类号： G11C8/08 , G11C11/1659 , G11C11/1675
摘要： An MRAM of a spin transfer type according to the invention is provided with a memory cell 10 and a word driver 30. The memory cell 10 has a magnetic resistance element 1 and a selection transistor TR having one of source/drain electrodes which is connected with one end of the magnetic resistance element 1. The word driver 30 drives a word line WL connected with a gate electrode of the selection transistor TR. The word driver 30 changes a drive voltage of the word line WL according to the write data DW to be written in the magnetic resistance element 1.
摘要翻译： 根据本发明的自旋转移型的MRAM具有存储单元10和字驱动器30.存储单元10具有磁阻元件1和选择晶体管TR，其具有与源极/漏极电极 字驱动器30驱动与选择晶体管TR的栅极连接的字线WL。 字驱动器30根据要写入磁阻元件1的写数据DW改变字线WL的驱动电压。
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公开(公告)号：US07688617B2
公开(公告)日：2010-03-30
申请号：US12083692
申请日：2006-10-17
IPC分类号： G11C11/02
CPC分类号： G06F11/1044 , G11C11/1653 , G11C11/1673 , G11C11/1675 , G11C2029/0411
摘要： An operation method of an MRAM of the present invention is an operation method of the MRAM in which a data write operation is carried out in a toggle write. The operation method of the present invention includes: (A) reading a data from a data cell by using a reference signal which is generated by using a reference cell; (B) performing an error detection on the read data; (C) correcting the data stored in the data cell, when an error is detected in the read data; (D) reading the data from the data cell as a first re-read data after the (C), when the error is detected in the read data, (E) performing the error detection on the first re-read data; (F) correcting the data stored in the reference cell, when an error is detected in the first re-read data; (G) reading the data from the data cell as a second re-read data after the (F), when the error is detected in the first re-read data; (H) performing the error detection on the second re-read data; and (I) correcting the data stored in the data cell again, when the error is detected in the second re-read data.
摘要翻译： 本发明的MRAM的操作方法是在切换写入中执行数据写入操作的MRAM的操作方法。 本发明的操作方法包括：（A）通过使用通过使用参考单元生成的参考信号从数据单元读取数据; （B）对所读取的数据执行错误检测; （C）当在读取数据中检测到错误时，校正存储在数据单元中的数据; （D）在（C）之后读取来自数据单元的数据作为第一重新读取数据，当在读取数据中检测到错误时，（E）对第一重新读取的数据执行错误检测; （F）当在所述第一重读数据中检测到错误时，校正存储在所述参考单元中的数据; （G）当在所述第一重新读取的数据中检测到所述错误时，读取来自所述数据单元的数据作为所述（F）之后的第二重新读取数据; （H）对所述第二再读数据执行所述错误检测; 以及（I）当在第二重新读取的数据中检测到错误时，再次校正存储在数据单元中的数据。
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