公开(公告)号：US07774041B2

公开(公告)日：2010-08-10

申请号：US10269960

申请日：2002-10-15

申请人： Kyojiro Nambu ,  Yoshihiro Ikeda

发明人： Kyojiro Nambu ,  Yoshihiro Ikeda

IPC分类号： A61B5/05

CPC分类号： A61B6/463 ,  A61B6/481 ,  A61B6/504 ,  A61B6/507 ,  G06T5/002 ,  G06T5/009 ,  G06T5/20 ,  G06T5/50 ,  G06T7/0012 ,  G06T2207/10081 ,  G06T2207/30016 ,  G06T2207/30104

摘要： First time-density curves concerning arteries in a specific region and second time-density curves concerning tissues in the specific region are prepared from a plurality of continuous images concerning the specific region of a subject into which a contrast medium is injected. Modulation transfer functions indicating local blood flow circulations in the tissues with respect to the arteries are calculated by curve-fitting so that residual errors of the second time-density curves are minimized with respect to convolution of the modulation transfer functions and first time-density curves. Indices concerning the local blood flow circulations with respect to the respective arteries are calculated from the modulation transfer functions. Maps of the indices for the arteries are prepared, and the maps of these indices are synthesized into one map in accordance with the residual errors for the first time-density curves.

公开(公告)号：US20100091402A1

公开(公告)日：2010-04-15

申请号：US12653216

申请日：2009-12-09

申请人： Hong Deng ,  Yoshihiro Ikeda ,  Mary Frances Minardi ,  Kentaro Takano ,  Kai Tang

发明人： Hong Deng ,  Yoshihiro Ikeda ,  Mary Frances Minardi ,  Kentaro Takano ,  Kai Tang

IPC分类号： G11B5/127 ,  G11B5/66

CPC分类号： G11B5/667 ,  G11B5/7325

摘要： The invention uses an adhesion layer of an amorphous alloy of aluminum. A first aluminum titanium embodiment of the amorphous adhesion layer preferably contains approximately equal amounts of aluminum and titanium (+/−5 at. %). A second embodiment of the amorphous adhesion layer preferably contains approximately equal amounts of aluminum and titanium (+/−5 at. %) and up to 10 at. % Zr with 5 at. % Zr being preferred. A third embodiment is aluminum tantalum preferably including from 15 to 25 at. % tantalum with 20 at. % being preferred. The most preferred compositions are Al50Ti50, Al47.5Ti47.5Zr5 or Al80Ta20. The adhesion layer is deposited onto the substrate. The substrate can be glass or a metal such as NiP-plated AlMg. The preferred embodiment of media according to the invention is for perpendicular recording and includes a magnetically soft underlayer deposited above the adhesion layer.

摘要翻译： 本发明使用铝非晶合金的粘合层。 无定形粘合层的第一铝钛实施例优选含有大约相等量的铝和钛（+/- 5原子％）。 无定形粘合层的第二个实施方案优选含有大约相等量的铝和钛（+/- 5原子％）和至多10原子。 ％Zr，5 at。 ％Zr是优选的。 第三实施例是铝钽，优选包括15至25at。 20％钽。 ％是首选。 最优选的组合物是Al 50 Ti 50，Al 47.5 Ti 47.5 Zr 5或Al 80 T a 20。 粘附层沉积在基底上。 基底可以是玻璃或诸如NiP镀AlMg的金属。 根据本发明的介质的优选实施例是用于垂直记录，并且包括沉积在粘附层上方的磁软底层。

公开(公告)号：US07524570B2

公开(公告)日：2009-04-28

申请号：US11251142

申请日：2005-10-13

申请人： Qing Dai ,  Bernd Heinz ,  Yoshihiro Ikeda ,  Mary Frances Minardi ,  Kentaro Takano

发明人： Qing Dai ,  Bernd Heinz ,  Yoshihiro Ikeda ,  Mary Frances Minardi ,  Kentaro Takano

IPC分类号： G11B5/667

CPC分类号： G11B5/732 ,  G11B5/667

摘要： A perpendicular magnetic recording disk has a soft magnetic underlayer (SUL) that has high corrosion resistance as well as high moment. The material of the SUL is an alloy comprising Co, Fe, X, and Y; where X is Ta or Nb, Y is Zr or Hf, and the combined amount of X and Y present in the alloy is between about 10 and 20 atomic percent. The atomic ratio of Co to Fe in the alloy is between about 90:10 to 10:90, preferably between about 25:75 and 35:65. The SUL may be a single-layer SUL or a multilayer SUL formed of multiple soft magnetic layers separated by an interlayer film or films.

摘要翻译： 垂直磁记录盘具有高耐蚀性和高力矩的软磁性底层（SUL）。 SUL的材料是包括Co，Fe，X和Y的合金; 其中X是Ta或Nb，Y是Zr或Hf，合金中存在的X和Y的组合量在约10和20原子％之间。 合金中Co与Fe的原子比为约90:10至10:90，优选约25:75至35:65。 SUL可以是由层间膜或膜分离的多个软磁层形成的单层SUL或多层SUL。

公开(公告)号：US07482071B2

公开(公告)日：2009-01-27

申请号：US11135750

申请日：2005-05-24

申请人： Hoa Van Do ,  Bernd Heinz ,  Yoshihiro Ikeda ,  Kentaro Takano ,  Min Xiao

发明人： Hoa Van Do ,  Bernd Heinz ,  Yoshihiro Ikeda ,  Kentaro Takano ,  Min Xiao

IPC分类号： G11B5/66

CPC分类号： G11B5/65 ,  G11B5/656 ,  G11B5/66 ,  G11B5/667 ,  G11B5/732

摘要： A perpendicular magnetic recording disk has an improved recording layer of a granular CoPtCr-based ferromagnetic alloy with inter-granular material made up of one or more oxides of Cr and one or more oxides of one or more of a segregant of Si, Ta, Ti, B, Nb or Hf, wherein the amount of oxygen present in the recording layer is greater than about 22 atomic percent and less than about 35 atomic percent. The amount of oxygen in the recording layer is substantially greater than the amount required for the stoichiometric oxide or oxides of the segregant or segregants, and a substantial portion of the oxygen present in the recording layer is present in the inter-granular material. The recording layer exhibits high signal-to-noise ratio (SNR), a coercivity Hc greater than about 5000 Oe and a nucleation field Hn greater (more negative) than about −1500 Oe.

摘要翻译： 垂直磁记录盘具有改进的基于CoPtCr的铁磁性合金的记录层，其具有由一种或多种Cr的一种或多种氧化物和一种或多种Si，Ta，Ti分离的一种或多种氧化物构成的颗粒间材料 ，B，Nb或Hf，其中存在于记录层中的氧的量大于约22原子％且小于约35原子％。 记录层中的氧气量基本上大于分离器或分离器的化学计量氧化物或氧化物所需的量，并且记录层中存在的大部分氧气存在于颗粒间材料中。 记录层显示出高的信噪比（SNR），矫顽力Hc大于约5000Oe，成核场Hn大于（大于负））大于约-1500Oe。

公开(公告)号：US07449747B2

公开(公告)日：2008-11-11

申请号：US11311162

申请日：2005-12-20

申请人： Tomoyuki Ishii ,  Kazunori Furusawa ,  Hideaki Kurata ,  Yoshihiro Ikeda

发明人： Tomoyuki Ishii ,  Kazunori Furusawa ,  Hideaki Kurata ,  Yoshihiro Ikeda

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  B82Y10/00 ,  G11C11/5621 ,  G11C16/0458 ,  G11C2211/5612 ,  G11C2216/06 ,  H01L27/115 ,  H01L29/42332 ,  H01L29/7887

摘要： Flash memory is rapidly decreasing in price. There is a demand for a new memory system that permits size reduction and suits multiple-value memory. A flash memory of AND type suitable for multiple-value memory with multiple-level threshold values can be made small in area if the inversion layer is utilized as the wiring; however, it suffers the disadvantage of greatly varying in writing characteristics from cell to cell. Another promising method of realizing multiple-value memory is to change the storage locations. This method, however, poses a problem with disturbance at the time of operation. The present invention provides one way to realize a semiconductor memory device with reduced cell-to-cell variation in writing characteristics. The semiconductor memory has a source region and a drain region, which are formed parallel to each other, and an assist electrode which is between and parallel to the source and drain regions without overlapping, so that it uses, at the time of writing, the assist electrode as the assist electrode for hot electrons to be injected at the source side and it uses, at the time of reading, the inversion layer formed under the assist electrode as the source region or the drain region.

摘要翻译： 闪存正在迅速降价。 需要一种允许大小缩小并适合多值内存的新内存系统。 如果使用反转层作为布线，则可以使适用于具有多级阈值的多值存储器的AND型闪速存储器的面积小; 然而，它具有从细胞到细胞的书写特征大大变化的缺点。 实现多值存储器的另一个有希望的方法是改变存储位置。 然而，这种方法在操作时存在干扰问题。 本发明提供了实现具有减小的写入特性的单元到单元变化的半导体存储器件的一种方式。 半导体存储器具有彼此平行形成的源极区域和漏极区域以及辅助电极，其在源极和漏极区域之间并且平行于其而不重叠，从而在写入时使用辅助电极 辅助电极作为用于在源极侧注入的热电子的辅助电极，并且在读取时使用形成在辅助电极下方的反型层作为源极区域或漏极区域。

公开(公告)号：US20080179653A1

公开(公告)日：2008-07-31

申请号：US11936339

申请日：2007-11-07

申请人： Tatsuya FUKUMURA ,  Yoshihiro Ikeda ,  Shunichi Narumi ,  Izumi Takesue

发明人： Tatsuya FUKUMURA ,  Yoshihiro Ikeda ,  Shunichi Narumi ,  Izumi Takesue

IPC分类号： H01L27/115 ,  H01L21/8247

CPC分类号： H01L27/11517 ,  G11C16/0433 ,  H01L21/32053 ,  H01L21/32055 ,  H01L21/768 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42376

摘要： A semiconductor device having a nonvolatile memory is reduced in size. In an AND type flash memory having a plurality of nonvolatile memory cells having a plurality of first electrodes, a plurality of word lines crossing therewith, and a plurality of floating gate electrodes disposed at positions which respectively lie between the plurality of adjacent first electrodes and overlap the plurality of word lines, as seen in plan view, the plurality of floating gate electrodes are formed in a convex shape, as seen in cross section, so as to be higher than the first electrodes. As a result, even when nonvolatile memory cells are reduced in size, it is possible to process the floating gate electrodes with ease. In addition, it is possible to improve the coupling ratio between floating gate electrodes and control gate electrodes of the word lines without increasing the area occupied by the nonvolatile memory cells.

摘要翻译： 具有非易失性存储器的半导体器件的尺寸减小。 在具有多个非易失性存储单元的AND型闪速存储器中，具有多个第一电极，与之交叉的多个字线，以及设置在分别位于多个相邻的第一电极之间且重叠的位置的多个浮置栅电极 如平面图所示，多个字线如横截面那样形成为凸形，从而高于第一电极。 结果，即使非易失性存储单元的尺寸减小，也可以容易地处理浮置栅电极。 此外，可以提高字线的浮栅电极和控制栅电极之间的耦合比，而不增加非易失存储单元所占的面积。

公开(公告)号：US20070247748A1

公开(公告)日：2007-10-25

申请号：US11379858

申请日：2006-04-24

申请人： Yoshihiro Ikeda ,  Byron Lengsfield ,  James Olson ,  Petrus VanDerHeijden

发明人： Yoshihiro Ikeda ,  Byron Lengsfield ,  James Olson ,  Petrus VanDerHeijden

IPC分类号： G11B5/147

CPC分类号： G11B5/3116 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/3146 ,  G11B5/667

摘要： A perpendicular magnetic recording data storage system combines a perpendicular medium that has a thin low-magnetic-permeability or “soft” underlayer (SUL) with a recording head that has a trailing shield (TS) with a thick throat height, i.e., a thickness in a direction orthogonal to the recording layer of the medium. The SUL is thin enough and has a low enough magnetic permeability to become saturated in a region beneath the trailing gap of the head during writing, but the throat height of the TS is thick enough to prevent the TS from becoming magnetically saturated during writing. The magnetic saturation of the SUL during writing changes the magnetic reluctance such that more of the magnetic flux going through the SUL changes direction (“field undershoot”) and goes to the TS. If the permeability of the SUL is so low (e.g., close to unity) that the SUL does not magnetically saturate, field undershoot may still occur because the reluctance from the SUL to the TS is still smaller than the reluctance from the SUL to the return pole (RP). Field undershoot enables a high write field gradient, which results in narrower magnetic transitions.

摘要翻译： 垂直磁记录数据存储系统将具有薄的低磁导率或“软”底层（SUL）的垂直介质与具有厚的喉部高度的后挡板（TS）的记录头组合，即厚度 在与介质的记录层正交的方向上。 SUL足够薄并且在写入期间具有足够低的磁导率以在头部的拖尾间隙下方的区域饱和，但是TS的喉部高度足够厚以防止TS在写入期间变得磁饱和。 在写入期间SUL的磁饱和度改变磁阻，使得穿过SUL的更多的磁通量改变方向（“场下冲”）并且进入TS。 如果SUL的磁导率如此低（例如，接近于1），SUL不会磁饱和，则由于从SUL到TS的磁阻仍然小于从SUL到返回的磁阻，所以仍然会发生场下冲。 杆（RP）。 场下冲可实现高写磁场梯度，从而导致较小的磁转变。

公开(公告)号：US20070215555A1

公开(公告)日：2007-09-20

申请号：US11662758

申请日：2005-09-14

申请人： Ryuji Furukawa ,  Masakuni Ueno ,  Yoshihiro Ikeda

发明人： Ryuji Furukawa ,  Masakuni Ueno ,  Yoshihiro Ikeda

IPC分类号： B01D21/01

CPC分类号： C08F6/18 ,  B01D21/0012 ,  C08C1/065 ,  C08F6/20 ,  Y10S528/936

摘要： The present invention provides a method for efficiently filtering slurry suspensions in a vessel including a nozzle flange near the vessel, when solids in the slurry suspensions being treated in the vessel are filtered for cleaning or for other purposes and subsequently subjected to reslurrying, dissolving or dispersing operation. A method for producing suspensions, solutions or dispersions comprising separating solids from slurry suspensions and then slurrying, dissolving or dispersing the solids again by adding a solvent, characterized in that the above described solids are separated in the same vessel as the one in which the operation to obtain the above described slurry suspensions has been performed and/or inside a flange directly connected to the same vessel.

摘要翻译： 本发明提供了一种用于在容器中包括喷嘴凸缘的容器中有效过滤浆料悬浮液的方法，当在容器中处理的浆料悬浮液中的固体被过滤以用于清洁或用于其它目的时，随后进行再浆化，溶解或分散 操作。 一种用于生产悬浮液，溶液或分散体的方法，包括从淤浆悬浮液中分离固体，然后通过加入溶剂将固体再次浆化，溶解或分散，其特征在于将上述固体在与操作相同的容器中分离 以获得上述浆料悬浮液已经和/或直接连接到同一容器的凸缘内。

公开(公告)号：US20070194370A1

公开(公告)日：2007-08-23

申请号：US11783648

申请日：2007-04-11

申请人： Yoshihiro Ikeda ,  Hiroshi Ishida

发明人： Yoshihiro Ikeda ,  Hiroshi Ishida

IPC分类号： H01L29/788

CPC分类号： H01L27/11526 ,  G11C16/10 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11529

摘要： A non-volatile semiconductor memory device includes a semiconductor substrate, an insulating film formed on the semiconductor substrate, a plurality of memory cells formed on the semiconductor substrate, a plurality of first assist gates extending toward the memory cell, a connection portion connecting end portions of the first assist gates, a second assist gate extending toward the memory cell, a first select transistor controlling whether to apply a voltage to an area under the first assist gate, a second select transistor controlling whether to apply a voltage to an area under the second assist gate, and an impurity region. The insulating film formed under an intersection area of the connection portion and the impurity region has a thickness larger than the insulating film formed under the first and second assist gates. A non-volatile semiconductor memory device capable of ensuring a writing speed as well as reliability can thus be obtained.

公开(公告)号：US07211857B2

公开(公告)日：2007-05-01

申请号：US11257020

申请日：2005-10-25

申请人： Yoshihiro Ikeda ,  Hiroshi Ishida

发明人： Yoshihiro Ikeda ,  Hiroshi Ishida

IPC分类号： H01L29/788

CPC分类号： H01L27/11526 ,  G11C16/10 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11529

摘要： A non-volatile semiconductor memory device includes a semiconductor substrate, an insulating film formed on the semiconductor substrate, a plurality of memory cells formed on the semiconductor substrate, a plurality of first assist gates extending toward the memory cell, a connection portion connecting end portions of the first assist gates, a second assist gate extending toward the memory cell, a first select transistor controlling whether to apply a voltage to an area under the first assist gate, a second select transistor controlling whether to apply a voltage to an area under the second assist gate, and an impurity region. The insulating film formed under an intersection area of the connection portion and the impurity region has a thickness larger than the insulating film formed under the first and second assist gates. A non-volatile semiconductor memory device capable of ensuring a writing speed as well as reliability can thus be obtained.

摘要翻译： 非易失性半导体存储器件包括半导体衬底，形成在半导体衬底上的绝缘膜，形成在半导体衬底上的多个存储单元，朝向存储单元延伸的多个第一辅助栅极，连接端部 第一辅助栅极的第二辅助栅极，朝向存储单元延伸的第二辅助栅极，控制是否向第一辅助栅极下方的区域施加电压的第一选择晶体管，控制是否向下方的区域施加电压的第二选择晶体管 第二辅助栅极和杂质区域。 形成在连接部分和杂质区域的交叉区域下方的绝缘膜的厚度大于形成在第一和第二辅助栅极下方的绝缘膜的厚度。 因此可以获得能够确保写入速度以及可靠性的非易失性半导体存储器件。