Pitch changing device for changing pitches of plate-like objects and
method of changing pitches
    32.
    发明授权
    Pitch changing device for changing pitches of plate-like objects and method of changing pitches 失效
    用于改变板状物体的间距的变桨装置和改变桨距的方法

    公开(公告)号:US5007788A

    公开(公告)日:1991-04-16

    申请号:US342345

    申请日:1989-04-24

    IPC分类号: H01L21/677

    CPC分类号: H01L21/67781

    摘要: A pitch changing device of the present invention includes a lift mechanism for unloading a plurality of wafers arranged in a cassette at predetermined pitches from the cassette while the pitches are kept unchanged, and a chuck mechanism for holding the unloaded wafers while the pitches are kept unchanged. The chuck mechanism includes moving pieces mounted to be movable in an arrangement direction of the wafers, for respectively supporting the wafers, elastic members mounted in the movable pieces to be expandible/contractible in the arrangement direction of the wafers, and a driving mechanism for expanding/contracting the elastic members. When the elastic members expand/contract by the driving mechanism, the pitches of the wafers are changed while the wafers are held. The lift mechanism includes a handler for variably moving wafer stands in the arrangement direction of the wafers, and changes the pitches while the wafers are lifted.

    摘要翻译: 本发明的变桨装置包括一个提升机构,用于在间距保持不变的情况下以预定间距从盒子中卸载设置在盒中的多个晶片;以及夹持机构,用于保持未加载的晶片,同时间距保持不变 。 卡盘机构包括安装成能够在晶片的布置方向上移动的移动件,用于分别支撑晶片,安装在可移动片中的弹性构件可在晶片的排列方向上可扩展/收缩;以及驱动机构,用于扩展 /收缩弹性构件。 当弹性构件通过驱动机构膨胀/收缩时,在保持晶片的同时改变晶片的间距。 升降机构包括用于在晶片的排列方向上可变地移动晶片架的处理器,并且在晶片被提升时改变间距。

    Heat processing furnace and vertical-type heat processing apparatus
    33.
    发明授权
    Heat processing furnace and vertical-type heat processing apparatus 有权
    热加工炉和立式热处理设备

    公开(公告)号:US08023806B2

    公开(公告)日:2011-09-20

    申请号:US12076531

    申请日:2008-03-19

    IPC分类号: A21B2/00

    摘要: There is provided a heat processing furnace capable of quickly increasing and decreasing a temperature, while achieving improvement in durability. A heat processing furnace 2 comprises: a processing vessel 3 for accommodating an object to be processed w and performing thereto a heat process; and a cylindrical heater 5 disposed to surround an outer circumference of the processing vessel 3, for heating the object to be processed w. The heater 5 includes a cylindrical heat insulating member 16, and heating resistors 18 arranged along an inner circumferential surface of the heat insulating member 16. Each of the heating resistors 18 is formed of a strip-shaped member that is bent into a waveform having peak portions and trough portions. Pin members 20 are arranged in the heat insulating member 16 at suitable intervals therebetween, the pin members 20 holding the heating resistor 18 such that the heating resistor 18 is movable in a radial direction of the heater.

    摘要翻译: 提供能够快速增加和降低温度的热处理炉,同时实现耐久性的提高。 热处理炉2包括:处理容器3,用于容纳被处理物体w并执行加热处理; 以及围绕处理容器3的外周设置的圆筒形加热器5,用于加热待加工物体w。 加热器5包括圆柱形绝热构件16和沿着隔热构件16的内周面布置的加热电阻器18.每个加热电阻器18由弯曲成具有峰值的波形的条形构件形成 部分和谷部分。 销构件20以合适的间隔布置在绝热构件16中,销构件20保持加热电阻器18,使得加热电阻器18可沿加热器的径向移动。

    Heat-processing furnace and manufacturing method thereof
    34.
    发明授权
    Heat-processing furnace and manufacturing method thereof 有权
    热处理炉及其制造方法

    公开(公告)号:US07888622B2

    公开(公告)日:2011-02-15

    申请号:US11902333

    申请日:2007-09-20

    IPC分类号: F27D11/00 H05B3/00

    摘要: A heat-processing furnace comprises: a processing vessel for housing an object to be processed to thermally heat the object to be processed; a cylindrical heat insulating member surrounding the processing vessel; a helical heating resistor disposed along an inner circumferential surface of the heat insulating member; and support members axially disposed on the inner circumferential surface of the heat insulating member, for supporting the heating resistor at predetermined pitches. A plurality of terminal plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the terminal plates radially passing through the heat insulating member to be extended outside. A plurality of fixing plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the fixing plates being fixed in the heat insulating member. The fixing plates are attached to the heating resistor by the same attachment structure as the attachment structure of the terminal plates to the heating resistor.

    摘要翻译: 一种热处理炉包括:用于容纳待加工物体的热处理容器,用于对被处理物体进行热加热; 围绕所述处理容器的圆柱形绝热构件; 螺旋加热电阻器,沿着所述绝热构件的内周面设置; 以及轴向设置在绝热构件的内周面上的支撑构件,用于以预定间距支撑加热电阻器。 多个端子板以适当的间隔设置在加热电阻器的外侧,并且附接到加热电阻器,端子板径向通过隔热构件延伸到外部。 多个固定板以适当的间隔设置在加热电阻器的外部,并附着在加热电阻器上,固定板固定在绝热构件中。 固定板通过与端子板与加热电阻器的连接结构相同的附接结构附接到加热电阻器。

    Thermal processing furnace
    35.
    发明申请
    Thermal processing furnace 有权
    热处理炉

    公开(公告)号:US20090194521A1

    公开(公告)日:2009-08-06

    申请号:US12320433

    申请日:2009-01-26

    IPC分类号: H05B3/06

    摘要: A thermal processing furnace comprises: a tubular heat insulation member 4 surrounding a processing vessel 3 for receiving and thermally processing an object to be processed w; a heating resistor 5 helically arranged on an inner circumferential surface of the heat insulation member 4; and a support member 13 disposed on the inner circumferential surface of the heat insulation member 4, the support member 13 supporting the heating resistor 5 such that the heating resistor 5 can be thermally expanded and thermally shrunk. The thermal processing furnace further comprises: a movement prevention member 15 disposed on the heating resistor 5 to be in contact with one side surface of the support member 13 so as to prevent a downward movement of the heating resistor 5.

    摘要翻译: 热处理炉包括:围绕处理容器3的管状隔热构件4,用于接收和热处理待加工物体w; 螺旋形地布置在隔热构件4的内周面上的加热电阻器5; 以及设置在绝热构件4的内周面上的支撑构件13,支撑构件13,其支撑加热电阻器5,使得加热电阻器5可以热膨胀和热收缩。 热处理炉还包括:移动防止部件15,设置在加热电阻器5上以与支撑部件13的一个侧表面接触,以防止加热电阻器5的向下移动。

    Heat-processing furnace and manufacuring method thereof
    36.
    发明申请
    Heat-processing furnace and manufacuring method thereof 有权
    热处理炉及其制造方法

    公开(公告)号:US20080073334A1

    公开(公告)日:2008-03-27

    申请号:US11902333

    申请日:2007-09-20

    IPC分类号: F27D11/02 H05B3/06

    摘要: A heat-processing furnace comprises: a processing vessel for housing an object to be processed to thermally heat the object to be processed; a cylindrical heat insulating member surrounding the processing vessel; a helical heating resistor disposed along an inner circumferential surface of the heat insulating member; and support members axially disposed on the inner circumferential surface of the heat insulating member, for supporting the heating resistor at predetermined pitches. A plurality of terminal plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the terminal plates radially passing through the heat insulating member to be extended outside. A plurality of fixing plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the fixing plates being fixed in the heat insulating member. The fixing plates are attached to the heating resistor by the same attachment structure as the attachment structure of the terminal plates to the heating resistor.

    摘要翻译: 一种热处理炉包括:用于容纳待加工物体的热处理容器,用于对被处理物体进行热加热; 围绕所述处理容器的圆柱形绝热构件; 螺旋加热电阻器,沿着所述绝热构件的内周面设置; 以及轴向设置在绝热构件的内周面上的支撑构件,用于以预定间距支撑加热电阻器。 多个端子板以适当的间隔设置在加热电阻器的外侧,并且附接到加热电阻器,端子板径向通过隔热构件延伸到外部。 多个固定板以适当的间隔设置在加热电阻器的外部,并附着在加热电阻器上,固定板固定在绝热构件中。 固定板通过与端子板与加热电阻器的连接结构相同的附接结构附接到加热电阻器。

    Single-wafer type heat treatment apparatus for semiconductor processing system

    公开(公告)号:US20060032072A1

    公开(公告)日:2006-02-16

    申请号:US10529417

    申请日:2004-05-26

    IPC分类号: F26B21/06 F26B25/06

    CPC分类号: H01L21/67109

    摘要: A single-substrate heat-processing apparatus (2) for a semiconductor processing system includes a process container (4) configured to accommodate a target substrate (W). A support member (6) is disposed in the process container (4) and configured to support the target substrate (W) substantially in a horizontal state, while a bottom surface of the target substrate is exposed. A heating gas supply section (20) is disposed to generate a heating gas and supply the heating gas toward the bottom surface of the target substrate (W). A distribution member (16) is disposed within a flow passage of the heating gas supplied from the heating gas supply section (20), and configured to improve distribution uniformity of the heating gas onto the bottom surface of the target substrate (W).

    Thermal processing apparatus
    38.
    发明授权
    Thermal processing apparatus 失效
    热处理设备

    公开(公告)号:US5884917A

    公开(公告)日:1999-03-23

    申请号:US630664

    申请日:1996-04-10

    申请人: Kenichi Yamaga

    发明人: Kenichi Yamaga

    CPC分类号: F16J15/128 F16J15/0887

    摘要: Annular groove portions are formed in each of facing surfaces of a sealing portion of a processing vessel that is kept in an atmosphere of a prescribed gas or an atmosphere at a reduced pressure, and a thin annular plate is arranged in such a manner that it is sucked against the entire periphery of the opening portions of the annular groove portions. The annular groove portions are each connected to an exhaust device, and the facing surfaces of the sealing portion are sealed in a gas-tight manner by reducing the pressure in the annular groove portions so that the thin annular plate is sucked against the entire periphery of the openings of the annular groove portions. This configuration prevents the introduction of unwanted oxygen and moisture from the atmosphere into the interior of the processing vessel, and also provides a thermal processing apparatus which has a sealing portion that prevents the emission of gases and moisture at high temperatures.

    摘要翻译: 环状槽部形成在处理容器的密封部的面对面上,该处理容器的密封部分保持在规定气体或大气中的减压气氛中,并且薄环形板以如下方式排列: 吸附在环形槽部分的开口部分的整个周边。 环形槽部各自连接到排气装置,并且密封部的相对表面通过减小环形槽部中的压力而以气密方式密封,使得薄环形板被吸附在整个外围 环形槽部分的开口。 这种构造防止了从大气中引入不需要的氧气和水分到处理容器的内部,并且还提供了一种热处理装置,其具有防止在高温下排放气体和水分的密封部分。

    Vertical heat treating apparatus
    39.
    发明授权
    Vertical heat treating apparatus 失效
    立式热处理装置

    公开(公告)号:US5829969A

    公开(公告)日:1998-11-03

    申请号:US835820

    申请日:1997-04-16

    IPC分类号: C30B35/00 F27D5/00

    CPC分类号: C30B35/005

    摘要: A vertical heat treating apparatus includes a first boat elevator for carrying a first wafer boat between a wafer transfer region and a predetermined position in a heat treating furnace, and a second boat elevator for carrying a second wafer boat between the wafer transfer region and the predetermined position in the heat treating furnace. With this construction, it is possible to eliminate the problems of causing the position shift of the wafer boat, so that and it is possible to prevent the wafer boat from overturning. The apparatus also has cutouts formed in the lower end portion of the wafer boat, and guide members formed on the upper surface of a wafer transfer stage so as to be engageable with the cutouts. With this construction, if the positioning is forcibly carried out when the wafer boat is loaded on the wafer transfer stage, it is possible to correct the position shift to prevent the shift from accumulating, so that it is possible to prevent the wafer boat from overturning.

    摘要翻译: 一种立式热处理装置包括:第一船用电梯,用于在晶片转印区域和热处理炉中的预定位置之间承载第一晶片舟;以及第二舟形升降机,用于将晶片转移区域与预定的 在热处理炉中的位置。 通过这种结构,可以消除引起晶片舟的位置偏移的问题,从而可以防止晶片舟倒塌。 该设备还具有形成在晶片舟皿的下端部分中的切口,以及形成在晶片传送台的上表面上以便与切口接合的引导部件。 利用这种结构,当晶片舟装载在晶片传送台上时,如果强制执行定位,则可以校正位置偏移以防止偏移积聚,从而可以防止晶片舟翻倒 。

    Apparatus for heat treating semiconductors at normal pressure and low
pressure
    40.
    发明授权
    Apparatus for heat treating semiconductors at normal pressure and low pressure 失效
    用于在正常压力和低压下热处理半导体的装置

    公开(公告)号:US5578132A

    公开(公告)日:1996-11-26

    申请号:US269608

    申请日:1994-07-05

    摘要: A heat treating unit for semiconductor processing is adapted to conduct normal pressure high temperature processing and low pressure thermal processing using corrosive gases. The unit includes an inner tube for receiving a boat which carries objects to be processed, an outer tube concentrically disposed outside the inner tube, a cylindrical manifold which has a gas feed port and an exhaust port, and a cap which tightly closes an opening of the manifold. The inner tube, outer tube and manifold are formed of quartz which is heat resistant and corrosion resistant, and these three components are integrally joined together by melting. The interior surface of the cap is provided with a protecting layer which is heat resistant and corrosion resistant. A connection between the cap and the manifold includes a high temperature heat resistant seal in which O-rings are cooled by a cooling system.

    摘要翻译: 用于半导体处理的热处理单元适于使用腐蚀性气体进行常压高温处理和低压热处理。 该单元包括用于接收携带被处理物体的船的内管,同心地设置在内管外部的外管,具有气体供给口和排气口的圆柱形歧管,以及紧密地封闭 歧管。 内管,外管和歧管由耐热耐腐蚀的石英形成,这三个部件通过熔化整体连接在一起。 盖的内表面设置有耐热和耐腐蚀的保护层。 盖和歧管之间的连接包括高温耐热密封件,其中O形环由冷却系统冷却。