摘要:
A wafer transferring method for transferring wafers between a cassette and a boat having grooves to hold the wafers, comprises the steps of providing an identification mechanism for positional alignment on the boat in advance, detecting the identification mechanism, and aligning the boat to a predetermined position based on a detection result and transferring the wafers from the cassette to the boat. A wafer transferring apparatus comprises a loading device for extracting wafers from a cassette and transferring the wafers onto a boat, a detection device for detecting an identification section provided on the boat in order to identify a wafer transferring position on the boat, and a control device for acquiring the wafer transferring position on the boat based on a detection result attained from the detection device and controlling a mutual position between the boat and the cassette to come to a predetermined position.
摘要:
A pitch changing device of the present invention includes a lift mechanism for unloading a plurality of wafers arranged in a cassette at predetermined pitches from the cassette while the pitches are kept unchanged, and a chuck mechanism for holding the unloaded wafers while the pitches are kept unchanged. The chuck mechanism includes moving pieces mounted to be movable in an arrangement direction of the wafers, for respectively supporting the wafers, elastic members mounted in the movable pieces to be expandible/contractible in the arrangement direction of the wafers, and a driving mechanism for expanding/contracting the elastic members. When the elastic members expand/contract by the driving mechanism, the pitches of the wafers are changed while the wafers are held. The lift mechanism includes a handler for variably moving wafer stands in the arrangement direction of the wafers, and changes the pitches while the wafers are lifted.
摘要:
There is provided a heat processing furnace capable of quickly increasing and decreasing a temperature, while achieving improvement in durability. A heat processing furnace 2 comprises: a processing vessel 3 for accommodating an object to be processed w and performing thereto a heat process; and a cylindrical heater 5 disposed to surround an outer circumference of the processing vessel 3, for heating the object to be processed w. The heater 5 includes a cylindrical heat insulating member 16, and heating resistors 18 arranged along an inner circumferential surface of the heat insulating member 16. Each of the heating resistors 18 is formed of a strip-shaped member that is bent into a waveform having peak portions and trough portions. Pin members 20 are arranged in the heat insulating member 16 at suitable intervals therebetween, the pin members 20 holding the heating resistor 18 such that the heating resistor 18 is movable in a radial direction of the heater.
摘要:
A heat-processing furnace comprises: a processing vessel for housing an object to be processed to thermally heat the object to be processed; a cylindrical heat insulating member surrounding the processing vessel; a helical heating resistor disposed along an inner circumferential surface of the heat insulating member; and support members axially disposed on the inner circumferential surface of the heat insulating member, for supporting the heating resistor at predetermined pitches. A plurality of terminal plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the terminal plates radially passing through the heat insulating member to be extended outside. A plurality of fixing plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the fixing plates being fixed in the heat insulating member. The fixing plates are attached to the heating resistor by the same attachment structure as the attachment structure of the terminal plates to the heating resistor.
摘要:
A thermal processing furnace comprises: a tubular heat insulation member 4 surrounding a processing vessel 3 for receiving and thermally processing an object to be processed w; a heating resistor 5 helically arranged on an inner circumferential surface of the heat insulation member 4; and a support member 13 disposed on the inner circumferential surface of the heat insulation member 4, the support member 13 supporting the heating resistor 5 such that the heating resistor 5 can be thermally expanded and thermally shrunk. The thermal processing furnace further comprises: a movement prevention member 15 disposed on the heating resistor 5 to be in contact with one side surface of the support member 13 so as to prevent a downward movement of the heating resistor 5.
摘要:
A heat-processing furnace comprises: a processing vessel for housing an object to be processed to thermally heat the object to be processed; a cylindrical heat insulating member surrounding the processing vessel; a helical heating resistor disposed along an inner circumferential surface of the heat insulating member; and support members axially disposed on the inner circumferential surface of the heat insulating member, for supporting the heating resistor at predetermined pitches. A plurality of terminal plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the terminal plates radially passing through the heat insulating member to be extended outside. A plurality of fixing plates are disposed outside the heating resistor at suitable intervals therebetween and attached to the heating resistor, the fixing plates being fixed in the heat insulating member. The fixing plates are attached to the heating resistor by the same attachment structure as the attachment structure of the terminal plates to the heating resistor.
摘要:
A single-substrate heat-processing apparatus (2) for a semiconductor processing system includes a process container (4) configured to accommodate a target substrate (W). A support member (6) is disposed in the process container (4) and configured to support the target substrate (W) substantially in a horizontal state, while a bottom surface of the target substrate is exposed. A heating gas supply section (20) is disposed to generate a heating gas and supply the heating gas toward the bottom surface of the target substrate (W). A distribution member (16) is disposed within a flow passage of the heating gas supplied from the heating gas supply section (20), and configured to improve distribution uniformity of the heating gas onto the bottom surface of the target substrate (W).
摘要:
Annular groove portions are formed in each of facing surfaces of a sealing portion of a processing vessel that is kept in an atmosphere of a prescribed gas or an atmosphere at a reduced pressure, and a thin annular plate is arranged in such a manner that it is sucked against the entire periphery of the opening portions of the annular groove portions. The annular groove portions are each connected to an exhaust device, and the facing surfaces of the sealing portion are sealed in a gas-tight manner by reducing the pressure in the annular groove portions so that the thin annular plate is sucked against the entire periphery of the openings of the annular groove portions. This configuration prevents the introduction of unwanted oxygen and moisture from the atmosphere into the interior of the processing vessel, and also provides a thermal processing apparatus which has a sealing portion that prevents the emission of gases and moisture at high temperatures.
摘要:
A vertical heat treating apparatus includes a first boat elevator for carrying a first wafer boat between a wafer transfer region and a predetermined position in a heat treating furnace, and a second boat elevator for carrying a second wafer boat between the wafer transfer region and the predetermined position in the heat treating furnace. With this construction, it is possible to eliminate the problems of causing the position shift of the wafer boat, so that and it is possible to prevent the wafer boat from overturning. The apparatus also has cutouts formed in the lower end portion of the wafer boat, and guide members formed on the upper surface of a wafer transfer stage so as to be engageable with the cutouts. With this construction, if the positioning is forcibly carried out when the wafer boat is loaded on the wafer transfer stage, it is possible to correct the position shift to prevent the shift from accumulating, so that it is possible to prevent the wafer boat from overturning.
摘要:
A heat treating unit for semiconductor processing is adapted to conduct normal pressure high temperature processing and low pressure thermal processing using corrosive gases. The unit includes an inner tube for receiving a boat which carries objects to be processed, an outer tube concentrically disposed outside the inner tube, a cylindrical manifold which has a gas feed port and an exhaust port, and a cap which tightly closes an opening of the manifold. The inner tube, outer tube and manifold are formed of quartz which is heat resistant and corrosion resistant, and these three components are integrally joined together by melting. The interior surface of the cap is provided with a protecting layer which is heat resistant and corrosion resistant. A connection between the cap and the manifold includes a high temperature heat resistant seal in which O-rings are cooled by a cooling system.