公开(公告)号：US06952492B2

公开(公告)日：2005-10-04

申请号：US09942213

申请日：2001-08-30

申请人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

发明人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

IPC分类号： G01R31/302 ,  G01N23/225 ,  G01Q20/04 ,  G01Q30/04 ,  H01L21/027 ,  H01L21/66 ,  G06K9/00

CPC分类号： G01N23/2251

摘要： A method and apparatus for inspecting a semiconductor device in which failure occurence conditions on a whole wafer are estimated by calculating the statistic of potential contrasts in pattern sections from sampled images to implement higher throughput, and defective conditions of a process are detected at an early stage with the help of time series data of the estimate result.

摘要翻译： 通过从采样图像计算图案部分中的潜在对比度的统计量来估计在整个晶片上发生故障的半导体器件的方法和装置，以实现更高的吞吐量，并且早期检测到处理的缺陷条件 在估计结果的时间序列数据的帮助下。

公开(公告)号：US20060018532A1

公开(公告)日：2006-01-26

申请号：US11235136

申请日：2005-09-27

申请人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

发明人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

IPC分类号： G06K9/00

CPC分类号： G01N23/2251

摘要： A method and apparatus for inspecting a wafer in which a focused charged particle beam is irradiated onto a surface of a wafer on which patterns are formed through a semiconductor device fabrication process, a secondary charged particle image of a desired area of the wafer is obtained by detecting secondary charged particles emitted from the surface of the wafer, and information about image feature amount of each pattern within the desired area from the obtained secondary charged particle beam image. The information about image feature amount is compared with a preset value, and on the basis of a result of the comparison, a quality of patterns which have been formed around the desired area is estimated, and information of a result of the estimation is outputted.

公开(公告)号：US06583634B1

公开(公告)日：2003-06-24

申请号：US09559563

申请日：2000-04-27

申请人： Mari Nozoe ,  Hiroyuki Shinada ,  Kenji Watanabe ,  Keiichi Saiki ,  Aritoshi Sugimoto ,  Hiroshi Morioka ,  Maki Tanaka ,  Hiroshi Miyai

发明人： Mari Nozoe ,  Hiroyuki Shinada ,  Kenji Watanabe ,  Keiichi Saiki ,  Aritoshi Sugimoto ,  Hiroshi Morioka ,  Maki Tanaka ,  Hiroshi Miyai

IPC分类号： G01R31305

CPC分类号： H01J37/28 ,  G01R31/307 ,  G09G3/006 ,  H01J37/265 ,  H01J2237/221 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to obtain optimum irradiation conditions of an electron beam according to the material and structure of a circuit pattern to be inspected and the kind of a failure to be detected and inspect under the optimum conditions without delay of the inspection time, an inspection device for irradiating the electron beam 19 to the sample board 9 which is a sample, detecting generated secondary electrons by the detector 7, storing obtained signals sequentially in the storage, comparing the same pattern stored in the storage by the comparison calculation unit, and extracting a failure by comparing the predetermined threshold value with the comparison signal by the failure decision unit is provided, wherein the optimum value of the irradiation energy is stored in the data base inside the device beforehand according to the structure of a sample and a recommended value of the irradiation energy suited to inspection can be searched for by inputting or selecting the irradiation energy by a user or inputting information regarding the structure of an article to be inspected.

摘要翻译： 为了根据要检查的电路图案的材料和结构获得电子束的最佳照射条件以及在最佳条件下无故障检测的种类和检查时间的延迟，检查装置 将电子束19照射到作为样本的样品板9，由检测器7检测产生的二次电子，将获得的信号顺序地存储在存储器中，比较由比较计算单元存储在存储器中的相同模式，并提取故障 提供了通过故障判定单元将预定阈值与比较信号进行比较，其中根据样本的结构和照射的推荐值，将照射能量的最佳值预先存储在设备内部的数据库中 可以通过使用照射能量的输入或选择来搜索适合于检查的能量 或输入关于被检查物品的结构的信息。

公开(公告)号：US20080302964A1

公开(公告)日：2008-12-11

申请号：US12190388

申请日：2008-08-12

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01N23/00 ,  G01R31/305

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 电路图案检查方法及其装置，其中待检查的样品的待检查部分的整体部分处于预定的改变状态，被检查的部分用成像高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US07417444B2

公开(公告)日：2008-08-26

申请号：US11269617

申请日：2005-11-09

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01R31/305 ,  H01J37/28

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US07026830B2

公开(公告)日：2006-04-11

申请号：US10379555

申请日：2003-03-06

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01R31/305 ,  G01R31/28

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： To make possible the in-line inspection of a pattern of an insulating material.A patterned wafer 40 formed with a pattern by a resist film is placed on a specimen table 21 of a patterned wafer inspection apparatus 1 in opposed relation to a SEM 3. An electron beam 10 of a large current is emitted from an electron gun 11 and the pattern of the patterned wafer is scanned only once at a high scanning rate. The secondary electrons generated by this scanning from the patterned wafer are detected by a secondary electron detector 16 thereby to acquire an electron beam image. Using this electron beam image, the comparative inspection is conducted on the patterned wafer through an arithmetic operation unit 32 and a defect determining unit 33. Since an electron beam image of high contrast can be obtained by scanning an electron beam only once, a patterned wafer inspection method using a SEM can be implemented in the IC fabrication method.

摘要翻译： 使绝缘材料的图案能够在线检查。 通过抗蚀剂膜形成图案的图案化晶片40与SEM 3相对地放置在图案化晶片检查装置1的样本台21上。 从电子枪11发射大电流的电子束10，以高扫描速度扫描图案化晶片的图案一次。 通过二次电子检测器16检测来自图案化晶片的该扫描产生的二次电子，从而获得电子束图像。 使用该电子束图像，通过算术运算单元32和缺陷判定单元33对图案化晶片进行比较检查。由于可以通过仅扫描电子束一次来获得高对比度的电子束图像，因此图案化晶片 使用SEM的检查方法可以在IC制造方法中实现。

公开(公告)号：US20060043982A1

公开(公告)日：2006-03-02

申请号：US11269617

申请日：2005-11-09

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01R31/305

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US06559663B2

公开(公告)日：2003-05-06

申请号：US09983703

申请日：2001-10-25

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01R31305

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with: the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束的同时，在从照射电子束的时刻起经过规定时间后，照射电子束的部位检测到二次带电粒子，根据这样检测出形成图像 通过使用如此形成的图像来检查次级带电粒子信号和待检查的部分。

公开(公告)号：US06329826B1

公开(公告)日：2001-12-11

申请号：US09525341

申请日：2000-03-14

申请人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01R31305

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US06703850B2

公开(公告)日：2004-03-09

申请号：US10430188

申请日：2003-05-07

申请人： Mari Nozoe ,  Hiroyuki Shinada ,  Kenji Watanabe ,  Keiichi Saiki ,  Aritoshi Sugimoto ,  Hiroshi Morioka ,  Maki Tanaka ,  Hiroshi Miyai

发明人： Mari Nozoe ,  Hiroyuki Shinada ,  Kenji Watanabe ,  Keiichi Saiki ,  Aritoshi Sugimoto ,  Hiroshi Morioka ,  Maki Tanaka ,  Hiroshi Miyai

IPC分类号： G01R31305

CPC分类号： H01J37/28 ,  G01R31/307 ,  G09G3/006 ,  H01J37/265 ,  H01J2237/221 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to obtain optimum irradiation conditions of an electron beam according to the material and structure of a circuit pattern to be inspected and the kind of a failure to be detected and inspect under the optimum conditions without delay of the inspection time, an inspection device for irradiating the electron beam 19 to the sample board 9 which is a sample, detecting generated secondary electrons by the detector 7, storing obtained signals sequentially in the storage, comparing the same pattern stored in the storage by the comparison calculation unit, and extracting a failure by comparing the predetermined threshold value with the comparison signal by the failure decision unit is provided, wherein the optimum value of the irradiation energy is stored in the data base inside the device beforehand according to the structure of a sample and a recommended value of the irradiation energy suited to inspection can be searched for by inputting or selecting the irradiation energy by a user or inputting information regarding the structure of an article to be inspected.

摘要翻译： 为了根据要检查的电路图案的材料和结构获得电子束的最佳照射条件以及在最佳条件下无故障检测的种类和检查时间的延迟，检查装置 将电子束19照射到作为样本的样品板9，由检测器7检测产生的二次电子，将获得的信号顺序地存储在存储器中，比较由比较计算单元存储在存储器中的相同模式，并提取故障 提供了通过故障判定单元将预定阈值与比较信号进行比较，其中根据样本的结构和照射的推荐值，将照射能量的最佳值预先存储在设备内部的数据库中 可以通过使用照射能量的输入或选择来搜索适合于检查的能量 或输入关于被检查物品的结构的信息。