公开(公告)号：US06241859B1

公开(公告)日：2001-06-05

申请号：US09138572

申请日：1998-08-24

申请人： Yoshiaki Yamada ,  Yoshihisa Matsubara ,  Takashi Ishigami

发明人： Yoshiaki Yamada ,  Yoshihisa Matsubara ,  Takashi Ishigami

IPC分类号： C23C1434

CPC分类号： H01L29/665 ,  H01L21/28052 ,  H01L21/28562 ,  H01L29/456 ,  H01L29/4933 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a method of forming a silicide layer on a silicon region. The method comprises the following steps. A first refractory metal layer is formed on the silicon region. The first refractory metal layer is made of a first refractory metal. A second refractory metal layer is formed on the first refractory metal layer. The second refractory metal layer is made of a second refractory metal and containing nitrogen. The second refractory metal layer has a film stress of not higher than 1×1010 dyne/cm2. A heat treatment is carried out in a first atmosphere substantially free of nitrogen so as to cause a silicidation of a lower region of the first refractory metal layer, whereby a C49-structured refractory metal silicide layer is formed on the silicon region.

摘要翻译： 本发明提供一种在硅区上形成硅化物层的方法。 该方法包括以下步骤。 在硅区域上形成第一难熔金属层。 第一耐火金属层由第一耐火金属制成。 在第一难熔金属层上形成第二难熔金属层。 第二耐火金属层由第二难熔金属制成并含有氮。 第二难熔金属层的膜应力不高于1×10 10达因/ cm 2。 在基本上不含氮的第一气氛中进行热处理，以使第一难熔金属层的下部区域发生硅化，由此在硅区域上形成C49结构的难熔金属硅化物层。

公开(公告)号：US5686980A

公开(公告)日：1997-11-11

申请号：US479463

申请日：1995-06-07

申请人： Hideo Hirayama ,  Nobuki Ibaraki ,  Koji Hidaka ,  Kiyotsugu Mizouchi ,  Michiya Kobayashi ,  Takashi Ishigami ,  Ryo Sakai ,  Makoto Kikuchi

发明人： Hideo Hirayama ,  Nobuki Ibaraki ,  Koji Hidaka ,  Kiyotsugu Mizouchi ,  Michiya Kobayashi ,  Takashi Ishigami ,  Ryo Sakai ,  Makoto Kikuchi

IPC分类号： G02B5/00 ,  G02F1/1335 ,  H01L31/0216 ,  G02F1/1333 ,  H01L31/062 ,  H01L31/113 ,  H01L31/232

CPC分类号： H01L31/02164 ,  G02F1/133512

摘要： A light-shielding film, and a liquid crystal display device including the light-shielding film, and a material suitable for forming the light-shielding film. The light-shielding film includes at least a film prepared from an inorganic insulating material and fine particles of metal and/or semi-metal dispersed in the insulating material film. The liquid crystal display device includes a display pixel electrode array substrate, a counter substrate, and a liquid crystal layer interposed between the two substrates. The light-shielding film is formed on the display pixel electrode array substrate of the liquid crystal display device.

摘要翻译： 遮光膜以及包括该遮光膜的液晶显示装置和适于形成该遮光膜的材料。 遮光膜至少包括由无机绝缘材料制成的膜和分散在绝缘材料膜中的金属和/或半金属微粒。 液晶显示装置包括显示像素电极阵列基板，对置基板和插入在两个基板之间的液晶层。 遮光膜形成在液晶显示装置的显示像素电极阵列基板上。

公开(公告)号：US5665647A

公开(公告)日：1997-09-09

申请号：US611723

申请日：1996-03-07

申请人： Takashi Ishigami

发明人： Takashi Ishigami

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/78

CPC分类号： H01L21/28518

摘要： A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film having a thickness of 5 nm or less on a silicon substrate or polysilicon film with a solution exhibiting an oxidation effect, forming a metal film on the silicon oxide film, and forming a silicide layer on the upper surface of the silicon substrate or polysilicon film by performing predetermined heat treatment.

摘要翻译： 制造半导体器件的方法包括以下步骤：在具有氧化效果的溶液的硅衬底或多晶硅膜上形成厚度为5nm以下的氧化硅膜，在氧化硅膜上形成金属膜，以及 通过进行预定的热处理在硅衬底或多晶硅膜的上表面上形成硅化物层。

公开(公告)号：US5584906A

公开(公告)日：1996-12-17

申请号：US28084

申请日：1993-03-08

申请人： Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi

发明人： Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi

IPC分类号： C22B9/22 ,  C22B34/12 ,  C22C14/00 ,  C23C14/34 ,  C25C3/28

CPC分类号： C22C14/00 ,  C22B34/1295 ,  C22B9/228 ,  C23C14/3414 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01074

摘要： The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained. A film having more uniform thickness of film and inside structure can be obtained from a sputtering target prepared using the above highly purified Ti material.

公开(公告)号：USRE45481E1

公开(公告)日：2015-04-21

申请号：US11386117

申请日：2006-03-22

申请人： Takashi Ishigami ,  Koichi Watanabe ,  Akihisa Nitta ,  Toshihiro Maki ,  Noriaki Yagi

发明人： Takashi Ishigami ,  Koichi Watanabe ,  Akihisa Nitta ,  Toshihiro Maki ,  Noriaki Yagi

IPC分类号： H01L21/20 ,  C22C21/00

CPC分类号： C22C21/00

摘要： An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.

摘要翻译： 包含0.001〜30原子％的至少一种能够构成铝的金属间化合物和/或具有比铝更高的标准电极电位的第一元素的互连线，例如至少一种 选自Y，Sc，La，Ce，Nd，Sm，Gd，Tb，Dy，Er，Th，Sr，Ti，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Tc，Re， Fe，Co，Ni，Pd，Ir，Pt，Cu，Ag，Au，Cd，Si，Pb和B; 和一种选自C，O，N和H的第二元素，其比例为0.01〜100原子％的比例，余量基本上为Al。 除了具有低电阻之外，这种薄膜的Al互连线可以防止发生小丘和与ITO电极的电化学反应。 可以通过使用具有相似组成的溅射靶以无尘的方式溅射来获得薄膜的互连线。

公开(公告)号：US08779644B2

公开(公告)日：2014-07-15

申请号：US13028294

申请日：2011-02-16

申请人： Yuichiro Tanaka ,  Takashi Ishigami ,  Kota Sakuma ,  Toshihiko Mato

发明人： Yuichiro Tanaka ,  Takashi Ishigami ,  Kota Sakuma ,  Toshihiko Mato

IPC分类号： H02K3/04 ,  H02K17/00 ,  H02K19/00 ,  H02K21/00 ,  H02K23/26 ,  H02K27/02 ,  H02K3/12 ,  H02K3/28 ,  H02K5/22 ,  H02K15/095

CPC分类号： H02K3/12 ,  H02K3/28 ,  H02K3/522 ,  H02K5/225 ,  H02K7/006 ,  H02K15/095 ,  H02K2203/06

摘要： A group of coils used in a stator of a rotating electrical machine, wound continuously upon a divided core with a crossover wire, in which 2N coils (where N is a natural number) are arranged at approximately regular intervals, wherein a winding direction of N coils, which are first through Nth continuously wound coils, of a front half of the 2N coils, and a winding direction of rear half coils which are (N+1)-st through (2N)-th continuously wound coils, are opposite.

摘要翻译： 在旋转电机的定子中使用的一组线圈，其连续地缠绕在具有交叉线的分割铁芯上，其中2N个线圈（其中N是自然数）以大致规则的间隔布置，其中N的缠绕方向 线圈是第一至第N个连续卷绕的线圈，2N个线圈的前半部分和第（N + 1）至第（2N）个连续卷绕的线圈的后半线圈的卷绕方向相反。

公开(公告)号：US20130140934A1

公开(公告)日：2013-06-06

申请号：US13702260

申请日：2011-06-06

申请人： Yuichiro Tanaka ,  Takashi Ishigami

发明人： Yuichiro Tanaka ,  Takashi Ishigami

IPC分类号： H02K3/04 ,  H02K15/04

CPC分类号： H02K3/04 ,  H02K3/18 ,  H02K3/28 ,  H02K15/045 ,  H02K15/095 ,  Y10T29/49009 ,  Y10T29/49073

摘要： A manufacturing method for manufacturing a rotating electrical machine equipped with a stator that includes a continuously wound coil unit achieved by continuously winding concentrated winding-type coils via cross wires, with coil wire having a rectangular section. The manufacturing method includes: mounting core segments, at which the coil wire is yet to be wound, at a core segment forward/backward moving mechanism; winding the coil wire with a winding track secured by driving the core segments forward/backward via the core segment forward/backward moving mechanism; setting faces of the coil wire in alignment by holding orientations of winding start wire and winding end wire at the concentrated winding-type coils at approximately 90° via open/close type chucks each equipped with a chuck forward/backward moving mechanism, with the open/close type chucks mounted at the core segment forward/backward moving mechanism; and forming the continuously wound coil unit by driving the core segments forward/backward via the core segment forward/backward moving mechanism, driving the open/close type chucks forward/backward and opening/closing the open/close type chucks.

摘要翻译： 一种制造具有定子的旋转电机的制造方法，该定子包括通过交叉线连续卷绕集中绕组线圈而实现的连续卷绕的线圈单元，其具有矩形截面的线圈线。 制造方法包括：在芯部前进/后退移动机构上安装线圈线未被缠绕的芯部段; 通过经由芯段前进/后退移动机构将线芯段向前/向后驱动而固定的缠绕轨道卷绕线圈线; 通过使夹紧前后移动机构的开闭型卡盘将保持卷绕起始线和卷绕端部线的卷绕起始线和卷绕端部线的方向保持在集中绕线型线圈大约90°处， /关闭型卡盘安装在芯段前进/后退移动机构; 并且通过芯部前进/后退移动机构向前/向后驱动芯部段，形成连续卷绕的线圈单元，驱动打开/关闭型卡盘向前/向后并打开/关闭打开/关闭型卡盘。

公开(公告)号：US07718117B2

公开(公告)日：2010-05-18

申请号：US10363257

申请日：2001-09-03

申请人： Koichi Watanabe ,  Yoichiro Yabe ,  Takashi Ishigami ,  Takashi Watanabe ,  Hitoshi Aoyama ,  Yasuo Kohsaka ,  Yukinobu Suzuki

发明人： Koichi Watanabe ,  Yoichiro Yabe ,  Takashi Ishigami ,  Takashi Watanabe ,  Hitoshi Aoyama ,  Yasuo Kohsaka ,  Yukinobu Suzuki

IPC分类号： B22F1/02 ,  C23C14/00

CPC分类号： C23C14/3414

摘要： A method of manufacturing a tungsten sputtering target includes pressing a high purity tungsten powder to form a pressed compact, first sintering the pressed compact at a temperature of 1450-1700° C. for one hour or longer after the pressed compact is heated at a heating-up rate of 2-5° C./min on the way to a maximum sintering temperature, second sintering the pressed compact to form a sintered body at a temperature of 1900° C. or higher for 5 hours or longer, working the sintered body to obtain a shape of a target, subjecting the target to a grinding work of at least one of rotary grinding and polishing, and subjecting the target to a finishing work of at least one of etching and reverse sputtering.

摘要翻译： 制造钨溅射靶的方法包括：将高纯度钨粉压制成压制成形体，首先在压制成型体在加热加热后，在1450-1700℃的温度下烧结1小时以上的压制成形体 在最高烧结温度的途中为2-5℃/分钟，在1900℃以上的温度下烧结压制成型体以烧结体5小时以上，加工烧结体 以获得目标的形状，对所述目标进行旋转研磨和抛光中的至少一个的研磨加工，以及对所述靶进行蚀刻和反向溅射中的至少一种的精加工。

公开(公告)号：US20060279146A1

公开(公告)日：2006-12-14

申请号：US11441134

申请日：2006-05-26

申请人： Takashi Ishigami ,  Masashi Kitamura ,  Osamu Koizumi ,  Mitsuaki Mirumachi

发明人： Takashi Ishigami ,  Masashi Kitamura ,  Osamu Koizumi ,  Mitsuaki Mirumachi

IPC分类号： H02K3/48 ,  H02K11/00

CPC分类号： H02K3/522 ,  H02K15/0025 ,  H02K15/095 ,  H02K2201/15

摘要： A stator of a rotating electric machine includes a stator core, and multiphase stator coils incorporated in the stator core. The stator core is formed by connecting a plurality of split core pieces. Each of the stator coils is wound around a coil bobbin installed on the outer periphery of the tooth portion of a respective one of the core pieces, by a concentrated winding method; and around mutually adjacent tooth portions, the respective coils that have the same phase and mutually different in the winding direction are continuously wound. A crossover wire for connecting the first stator coil wound around the first tooth portion and the second stator coil wound around the second tooth portion, is located at a position further toward the central side in the axial direction of the coil bobbin than the end portion of the coil bobbin, inclusive of this end portion.

摘要翻译： 旋转电机的定子包括定子铁心和并入定子铁芯中的多相定子线圈。 定子铁芯通过连接多个分裂铁芯片而形成。 每个定子线圈通过集中绕线缠绕在安装在相应一个芯片的齿部的外周上的线圈架上; 并且在彼此相邻的齿部周围，连续卷绕具有相同相位并且在卷绕方向上彼此不同的各个线圈。 用于连接缠绕在第一齿部上的第一定子线圈和缠绕在第二齿部上的第二定子线圈的交叉线位于比线圈架的轴向更靠近线圈架轴的中心侧的位置 线圈架，包括该端部。

公开(公告)号：US06210634B1

公开(公告)日：2001-04-03

申请号：US09280001

申请日：1999-03-29

申请人： Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi

发明人： Takashi Ishigami ,  Mituo Kawai ,  Noriaki Yagi

IPC分类号： C22C1400

CPC分类号： C22B9/228 ,  C22B34/1295 ,  C22C14/00 ,  C23C14/3414 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01074

摘要： The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained. A film having more uniform thickness of film and inside structure can be obtained from a sputtering target prepared using the above highly purified Ti material.

摘要翻译： 通过熔盐电解或碘化法制备的粗Ti粒子根据杂质的含量分为各个粒径，具有所需粒径的粗Ti粒子选自根据各粒径分级的粗Ti粒子。 否则，粗Ti颗粒被酸处理。 然后电子束熔化。 通过上述制造方法，制备氧含量不大于350ppm，Fe，Ni和Cr含量不高于15ppm的高纯度Ti材料，Na和K含量不大于0.5ppm ，作为材料特性不小于70％的面积的减小，以及不低于16W / m K的热导率。简而言之，高纯度，高加工性和良好导热性的高纯度Ti材料可以是 获得。 可以从使用上述高纯度Ti材料制备的溅射靶获得具有更均匀厚度的膜和内部结构的膜。