摘要:
A ceramic electronic component includes a ceramic electronic component body having two end faces opposing each other, side faces connecting the two end faces, and terminal electrodes formed on each end face; and terminal members, each including a metal being soldered to one of the terminal electrodes. Each of the terminal electrodes includes a metal layer formed only on the end face, a conductive resin layer formed on the metal layer, the conductive resin layer including metal powder and resin, and a plating film on the conductive resin layer.
摘要:
A monolithic ceramic capacitor includes a sintered ceramic compact having a core-shell structure, a plurality of internal electrodes arranged in and separated by the ceramic sintered compact so as to overlap in the thickness direction, and a plurality of external electrodes formed on the outermost faces of the ceramic sintered compact. In the core-shell structure, cores are composed of a particulate dielectric ceramic, and shells are formed on the cores and are composed of a material having a dielectric constant lower than that of the dielectric ceramic. The area ratio of the cores to the shells lies in a range of 7:3 to 3:7 in a cross-section of the sintered ceramic compact in an arbitrary direction. The core-shell structure can achieve further miniaturization and higher capacitance of the monolithic ceramic capacitor, in addition to superior temperature characteristics.
摘要:
The present invention provides a laminated ceramic capacitor having good temperature characteristics, and suitable for attaining miniaturization, large capacitance and low production cost besides having high reliability in the high temperature load test, wherein a plurality of inner electrodes are formed in a ceramic sintered body comprising a reduction resistant dielectric ceramic in which grains having a core-shell structure and grains having a homogeneous structure are mixed together, and wherein outer electrodes are formed on the outer surfaces of the ceramic sintered body, the area ratio between the total area of the grains having the core-shell structure and the total area of the grains having the homogeneous structure being adjusted within a the range of about 2:8 to 4:6 when a cross section is observed along an arbitrary direction of the ceramic sintered body.
摘要:
A resistor 1 in which at least one resistance film 4 is embedded in a ceramic sintered body 3, glass is diffused into the sintered body 3 to form a glass diffusion layer 6, and both end faces 4a and 4b of the resistance film 4 are respectively exposed to both end faces 3a and 3b of the ceramic sintered body 3.
摘要:
A chip type varistor in which first and second inner electrodes are embedded in a sintered body obtained by laminating a plurality of semiconductor ceramics layers so as not to be overlapped with each other in the direction of thickness of the ceramics layers, respective one edges of the first and second inner electrodes are led out to one and the other of a pair of side surfaces opposed to each other of the sintered body and are electrically connected to outer electrodes formed on the pair of side surfaces of the sintered body, respectively, a non-connected type inner electrode which is not electrically connected to the above described outer electrodes is embedded in the sintered body, and the non-connected type inner electrode is arranged so as to be overlapped with the first and second inner electrodes while being separated by the semiconductor ceramics layer.
摘要:
A monolithic type varistor in which a plurality of inner electrodes are arranged in a sintered body composed of semiconductor ceramics so as to be overlapped with each other while being separated by semiconductor ceramic layers. The plurality of inner electrodes are electrically connected to first and second outer electrodes formed on both end surfaces of the sintered body. One or more non-connected type inner electrodes are arranged between adjacent ones of the plurality of inner electrodes and are not electrically connected to the outer electrodes, each of the non-connected type inner electrodes being spaced apart from each adjacent inner electrode or non-connected type inner electrode while being separated therefrom by a semiconductor ceramic layer. Voltage non-linearity is obtained by Schottky barriers formed at the interface of the inner electrode and the semiconductor ceramic layer and the interface of the non-connected type inner electrode and the semiconductor ceramic layer. The value of the number of grain boundaries between semiconductor particles in at least one semiconductor ceramic layer is two or less.
摘要:
Respective first end portions of first and second internal electrodes are exposed at respective end surfaces of a varistor body, which is in the form of a rectangular parallelepiped. These end surfaces of the varistor body are covered with low resistance parts which include ceramic material in order to prevent the internal electrodes from decomposition. External electrodes are formed on the low resistance parts, so as, to be electrically connected with corresponding ones of the internal electrodes through the low resistance parts.
摘要:
Ceramic compositions having (1) a mixture comprised of barium titanate, zirconium oxide and one or more of cerium oxide, neodymium oxide, lanthanum oxide and an oxide of at least one of lanthanides having atomic numbers 59 to 66 in specific ratios and (2) 0.01 to 0.4% by weight (calculated as Mn based on the weight of the mixture) manganese oxide. Such compositions form reduction-reoxidation type semiconducting capacitors of reduced size and increased capacitance per unit area.