公开(公告)号：US20090218542A1

公开(公告)日：2009-09-03

申请号：US12393090

申请日：2009-02-26

申请人： Kenji Isami ,  Mayumi Kimura ,  Tetsuo Aoyama ,  Tsuguhiro Tago

发明人： Kenji Isami ,  Mayumi Kimura ,  Tetsuo Aoyama ,  Tsuguhiro Tago

IPC分类号： C09K13/02 ,  C09K13/00

CPC分类号： C09K13/00 ,  C09K13/02 ,  H01L21/30608

摘要： An etchant composition contains (a) an alkaline compound mixture of an organic alkaline compound and inorganic alkaline compound and (b) a silicon-containing compound. The organic alkaline compound is composed of one or more ingredients from quaternary ammonium hydroxide and ethylenediamine. The inorganic alkaline compound is composed of one or more ingredients from sodium hydroxide, potassium hydroxide, ammonia and hydrazine. The silicon-containing inorganic compound is composed of one or more ingredients from metal silicon, fumed silica, colloidal silica, silica gel, silica sol, diatomaceous earth, acid clay and activated clay, and the silicon-containing organic compound is composed of one or more ingredients from quaternary ammonium salts of alkyl silicate and quaternary ammonium salts of alkyl silicic acid.

摘要翻译： 蚀刻剂组合物包含（a）有机碱性化合物和无机碱性化合物的碱性化合物混合物和（b）含硅化合物。 有机碱性化合物由氢氧化季铵和乙二胺的一种或多种成分组成。 无机碱性化合物由一种或多种来自氢氧化钠，氢氧化钾，氨和肼的成分组成。 含硅无机化合物由金属硅，热解法二氧化硅，胶体二氧化硅，硅胶，二氧化硅溶胶，硅藻土，酸性粘土和活性白土中的一种或多种成分组成，含硅有机化合物由一种或多种 更多的成分来自烷基硅酸盐的季铵盐和烷基硅酸的季铵盐。

公开(公告)号：US07399365B2

公开(公告)日：2008-07-15

申请号：US10826319

申请日：2004-04-19

申请人： Tetsuo Aoyama ,  Toshitaka Hiraga ,  Tomoko Suzuki

发明人： Tetsuo Aoyama ,  Toshitaka Hiraga ,  Tomoko Suzuki

IPC分类号： B08B3/04 ,  C11D7/50

CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D7/10 ,  C11D7/263 ,  C11D7/28 ,  C11D7/3218 ,  C11D7/3263 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76814

摘要： The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.

摘要翻译： 本发明涉及稀释氟化物溶液以及用于从包括这种稀溶液的半导体衬底清洗等离子体蚀刻残留物的方法。 根据本发明的组合物和方法可以有利地提供清洁效率和材料相容性。

公开(公告)号：US5911836A

公开(公告)日：1999-06-15

申请号：US781774

申请日：1997-01-09

申请人： Mayumi Hada ,  Ryuji Hasemi ,  Hidetoshi Ikeda ,  Tetsuo Aoyama

发明人： Mayumi Hada ,  Ryuji Hasemi ,  Hidetoshi Ikeda ,  Tetsuo Aoyama

IPC分类号： G03F7/42 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3213 ,  B08B3/08 ,  H01L21/44

CPC分类号： H01L21/02071 ,  G03F7/423 ,  Y10S438/906

摘要： A method of producing a semiconductor device, which includes applying a conductive metal film on a semiconductor wafer, applying a photoresist on the conductive metal film, removing the photoresist with a removing agent containing a fluorine compound or at least one basic component selected from the group consisting of a quaternary ammonium hydroxide, an alkanolamine and a mixture of an alkanolamine and a reducing agent, and cleaning the resultant semiconductor device by rinsing with a rinse comprising water and at least one peroxide compound. The method of the present invention can provide a highly accurate wiring circuit without corrosion of the conductive metal film.

摘要翻译： 一种制造半导体器件的方法，其包括在半导体晶片上施加导电金属膜，在导电金属膜上施加光致抗蚀剂，用含有氟化合物的除去剂或至少一种选自下组的碱性成分除去光致抗蚀剂 由季铵氢氧化物，链烷醇胺和链烷醇胺和还原剂的混合物组成，并且通过用包含水和至少一种过氧化物的漂洗液进行漂洗来清洗所得的半导体器件。 本发明的方法可以提供高精度的布线电路，而不会导致金属膜的腐蚀。

公开(公告)号：US5846695A

公开(公告)日：1998-12-08

申请号：US829697

申请日：1997-03-26

申请人： Keiichi Iwata ,  Tetsuya Karita ,  Tetsuo Aoyama

发明人： Keiichi Iwata ,  Tetsuya Karita ,  Tetsuo Aoyama

IPC分类号： G03F7/32 ,  G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  G03C5/00

CPC分类号： H01L21/02071 ,  G03F7/425 ,  H01L21/31133

摘要： A removing agent composition for a photoresist comprising 0.01 to 20% by weight of a quaternary ammonium hydroxide, 1 to 80% by weight of a nucleophilic amine having an oxidation-reduction potential, 0.5 to 20% by weight of a sugar and/or a sugar alcohol, and water in the remaining amount; and a process for producing a semiconductor integrated circuit comprising removing a photoresist applied onto an inorganic substrate by using the above removing agent composition. A layer of a photoresist applied onto an inorganic substrate, a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer, or residues of a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer and subsequent ashing of the layer can easily be removed at a low temperature in a short time. The wiring material of the circuit is not corroded at all, and ultra-fine working can be performed.

摘要翻译： 用于光致抗蚀剂的去除剂组合物，其包含0.01至20重量％的季铵氢氧化物，1至80重量％的具有氧化还原电位的亲核胺，0.5至20重量％的糖和/或 糖醇和水中剩余量; 以及用于制造半导体集成电路的方法，包括通过使用上述除去剂组合物除去施加到无机基板上的光致抗蚀剂。 施加到无机基板上的光致抗蚀剂层，在被该层掩蔽的无机基板的干蚀刻之后残留的光致抗蚀剂层，或在被掩蔽的无机基板的干蚀刻之后留下的光致抗蚀剂层的残留物 通过层和随后的灰化可以在短时间内在低温下容易地去除。 电路的接线材料根本不腐蚀，可以进行超细的加工。

公开(公告)号：US5630904A

公开(公告)日：1997-05-20

申请号：US410726

申请日：1995-03-27

申请人： Tetsuo Aoyama ,  Rieko Nakano ,  Akira Ishihama ,  Koichiro Adachi

发明人： Tetsuo Aoyama ,  Rieko Nakano ,  Akira Ishihama ,  Koichiro Adachi

IPC分类号： G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  C09K13/00

CPC分类号： H01L21/02071 ,  G03F7/422 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/32138 ,  Y10S438/963

摘要： Stripping and cleaning agent for removing dry-etching photoresist residues, and a method for forming an aluminum based line pattern using the stripping and cleaning agent. The stripping and cleaning agent contains (a) from 5 to 50% by weight of an organocarboxlic ammonium salt or an amine carboxylate, represented by the formula [R.sup.1 ]m[COONH.sub.p (R.sup.2)q]n, where R.sup.1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R.sup.2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is integer of from 1 to 4, q is integer of from 1 to 3, and p+q=4 and (b) from 0.5 to 15% by weight of a fluorine compound. The inventive method is advantageously applied to treating a dry-etched semiconductor substrate with the stripping and cleaning agent. The semiconductor substrate comprises a semiconductor wafer having thereon a conductive layer containing aluminum. The conductive layer is dry-etched through a patterned photoresist mask to form a wiring body having etched side walls. The dry etching forms a side wall protection film on the side walls. In accordance with the inventive method, the side wall protection film and other resist residues are completely released without corroding the wiring body.

摘要翻译： 用于去除干蚀刻光刻胶残渣的剥离和清洁剂，以及使用剥离和清洁剂形成铝基线图案的方法。 剥离剂和清洁剂含有（a）5-50重量％的由式[R1] m [COONHp（R2）q] n表示的有机碳铵铵盐或胺羧酸盐，其中R 1是氢，或 具有1至18个碳原子的烷基或芳基; R2是氢或具有1至4个碳原子的烷基; m和n独立地为1至4的整数，p为1至4的整数，q为1至3的整数，p + q = 4和（b）0.5至15重量％的氟 复合。 本发明的方法有利地应用于用剥离和清洁剂处理干蚀刻的半导体衬底。 半导体衬底包括其上具有含有铝的导电层的半导体晶片。 通过图案化的光致抗蚀剂掩模对导电层进行干蚀刻，以形成具有蚀刻侧壁的布线体。 干蚀刻在侧壁上形成侧壁保护膜。 根据本发明的方法，侧壁保护膜和其它抗蚀剂残留物完全释放而不会腐蚀布线体。

公开(公告)号：US5538832A

公开(公告)日：1996-07-23

申请号：US347889

申请日：1994-12-01

申请人： Tetsuo Aoyama ,  Takeshi Nagasaka ,  Toshihiko Kobayashi ,  Naohito Yoshimura ,  Takashi Nakata ,  Youichi Takizawa

发明人： Tetsuo Aoyama ,  Takeshi Nagasaka ,  Toshihiko Kobayashi ,  Naohito Yoshimura ,  Takashi Nakata ,  Youichi Takizawa

IPC分类号： G03F7/32 ,  H05K3/10 ,  G03F7/30

CPC分类号： G03F7/322 ,  H05K3/108 ,  H05K2203/122

摘要： A developing solution comprising a specific amount of a quaternary ammonium hydroxide represented by the general formula [(R.sup.1).sub.3 N--R].sup.+ .multidot.OH.sup.- (R indicates an alkyl group having 1 to 3 carbon atoms or a hydroxy-substituted alkyl group having 1 to 3 carbon atoms, and R.sup.1 indicates an alkyl group having 1 to 3 carbon atoms) and, if necessary, a quaternary ammonium hydrogen carbonate represented by the general formula [(R.sup.1).sub.3 N--R].sup.+ .multidot.HCO.sub.3.sup.- (R and R.sup.1 are the same as the above) and having a pH in the range of 9 to 13, and a process for producing printed circuit boards using an organic alkali solution, are provided. The developing solution needs no defoaming agent because it causes little foaming. Printed circuit boards produced by using the developing solution have excellent finished accuracy. Therefore, fine circuits of printed circuit networks can be produced with stability.

摘要翻译： 包含特定量的由通式[（R1）3N-R] + xOH-（R表示具有1至3个碳原子的烷基或具有1至3个碳原子的羟基取代的烷基）表示的季铵氢氧化物的显影液 3个碳原子，R1表示碳原子数1〜3的烷基），根据需要，由通式[（R1）3N-R] + xHCO3-（R和R1相同）表示的季铵碳酸氢盐 如上所述），pH为9〜13的范围，以及使用有机碱溶液的印刷电路板的制造方法。 开发溶液不需要消泡剂，因为它几乎不起泡。 使用显影液生产的印刷电路板具有优异的成品精度。 因此，可以稳定地制造印刷电路网络的精细电路。

公开(公告)号：US5175078A

公开(公告)日：1992-12-29

申请号：US857076

申请日：1992-03-18

申请人： Tetsuo Aoyama ,  Susumu Kaneko

发明人： Tetsuo Aoyama ,  Susumu Kaneko

IPC分类号： G03F7/32

CPC分类号： G03F7/322

摘要： A positive type photoresist developer which comprises an aqueous solution of quaternary ammonium hydroxide represented by the general formula; ##STR1## (wherein all the symbols are as defined in the appended claims) and hydrazine or hydrazine and a nonionic surfactant is disclosed.The developer can form a fine pattern having a high degree of resolution and can provide an excellent profile with few irregularities in pattern dimensions.

摘要翻译： 一种正型光致抗蚀剂显影剂，其包含由通式表示的季铵氢氧化物的水溶液; （I）（其中所有符号如所附权利要求中所定义），并且公开了肼或肼和非离子表面活性剂。 显影剂可以形成具有高分辨率的精细图案，并且可以提供优异的轮廓，在图案尺寸上具有很少的不规则性。

公开(公告)号：US4613684A

公开(公告)日：1986-09-23

申请号：US655331

申请日：1984-09-27

申请人： Tetsuo Aoyama ,  Koichi Kida ,  Takako Uchiyama

发明人： Tetsuo Aoyama ,  Koichi Kida ,  Takako Uchiyama

IPC分类号： C07C67/20 ,  C07C69/54 ,  C07C69/675 ,  C07C69/68 ,  C07C103/127

CPC分类号： C07C69/675 ,  C07C67/20 ,  C07C69/54 ,  C07C69/68 ,  Y02P20/582

摘要： A commercially economical process for preparing a carboxylic acid ester from a carboxylic acid amide is disclosed. The process is very meritorious, since it produces neither ammonia nor ammonium sulfates. Rather, the process by-produces formamides which are very useful compounds as solvents. Further, formamide can easily be converted to hydrogen cyanide by dehydration. The process comprises reacting a carboxylic acid amide with a formic acid ester and/or methanol and carbon monoxide in the presence of a bicyclic amidine or tertiary amine catalyst and optionally in the co-existence of a metal carbonyl. An industrial process for preparing methyl methacrylate which is a materialization of the process shown above is described in detail referring to a figure.

摘要翻译： 公开了一种从羧酸酰胺制备羧酸酯的商业经济方法。 该方法非常有价值，因为它不产生氨和硫酸铵。 相反，该方法副产生甲酰胺，其是非常有用的化合物作为溶剂。 此外，甲酰胺可以通过脱水容易地转化为氰化氢。 该方法包括在双环脒或叔胺催化剂的存在下，任选地在羰基金属的共存下使羧酸酰胺与甲酸酯和/或甲醇和一氧化碳反应。 下面参照附图详细描述制备甲基丙烯酸甲酯的工业过程，这是上述过程的实现。

公开(公告)号：US4230636A

公开(公告)日：1980-10-28

申请号：US917894

申请日：1978-06-22

申请人： Masao Saito ,  Tetsuo Aoyama ,  Shigeru Horie ,  Kazuo Takada

发明人： Masao Saito ,  Tetsuo Aoyama ,  Shigeru Horie ,  Kazuo Takada

IPC分类号： C07B61/00 ,  B01J23/00 ,  B01J23/74 ,  B01J27/00 ,  B01J31/00 ,  B01J31/04 ,  B01J31/20 ,  C07C67/00 ,  C07C231/00 ,  C07C231/10 ,  C07C233/03 ,  C07C103/36

CPC分类号： C07C233/00

摘要： Dimethyl formamide is produced in high yield with good selectivity by reaction of monomethylamine and trimethylamine, or together with dimethylamine, with carbon monoxide in the presence of metallic iron or an iron compound such as oxide, hydroxide, sulfide, inorganic acid salt, organic acid salt or carbonyl compound of iron.

摘要翻译： 通过在金属铁或铁化合物如氧化物，氢氧化物，硫化物，无机酸盐，有机酸盐的存在下，通过一甲基胺和三甲胺或与二甲基胺一起与一氧化碳反应，以高产率，高选择性地生产二甲基甲酰胺 或铁的羰基化合物。

公开(公告)号：US4218398A

公开(公告)日：1980-08-19

申请号：US972257

申请日：1978-12-22

申请人： Masao Saito ,  Kinichi Mizuno ,  Yuzi Onda ,  Tetsuo Aoyama ,  Kumiko Kato

发明人： Masao Saito ,  Kinichi Mizuno ,  Yuzi Onda ,  Tetsuo Aoyama ,  Kumiko Kato

IPC分类号： C07C231/00 ,  C07C233/00 ,  C07C103/36

CPC分类号： C07C231/00 ,  C07C233/00

摘要： Dimethylformamide mg.multidot.produced by reaction of monomethylamine and trimethylamine at a molar ratio of trimethylamine to monomethylamine of 0.1-10, with carbon monoxide in the presence of 1-500 mg. atom of at least one of iodine, bromine, iodides and bromides as a catalyst in term of halogen per one mole of raw material methylamines at a temperature of 100.degree.-350.degree. C. under a pressure of at least 50 kg/cm.sup.2 gage. Dimethylformamide is produced in a very high yield with a high selectivity from monomethylamine and trimethylamine having less demand among three species of methylamines formed from methanol and ammonia.

摘要翻译： 二甲基甲酰胺通过一甲胺和三甲胺以三甲胺与一甲胺的摩尔比为0.1-10与一氧化碳在1-500mg存在下反应生成。 在100-350℃的温度下，在至少50kg / cm2的压力下，每1摩尔原料甲胺中的碘，溴，碘化物和溴化物中的至少一种作为催化剂的原子。 二甲基甲酰胺以非常高的产率以高的选择性从一甲胺和三甲胺生产，在甲醇和氨形成的三种甲胺中的需求较少。