Tissue products with controlled lint properties
    31.
    发明申请
    Tissue products with controlled lint properties 有权
    具有控制棉绒性能的组织产品

    公开(公告)号:US20080073045A1

    公开(公告)日:2008-03-27

    申请号:US11818512

    申请日:2007-06-14

    IPC分类号: D21H27/00 B31F1/12 D21H19/20

    摘要: Sheet-like products, such as tissue products, are disclosed containing an additive composition. The additive composition, for instance, comprises an aqueous dispersion containing an alpha-olefin polymer, an ethylene-carboxylic acid copolymer, or mixtures thereof. The alpha-olefin polymer may comprise an interpolymer of ethylene and octene, while the ethylene-carboxylic acid copolymer may comprise ethylene-acrylic acid copolymer. The additive composition may also contain a dispersing agent, such as a fatty acid. The additive composition may be incorporated into the tissue web by being combined with the fibers that are used to form the web. Alternatively, the additive composition may be topically applied to the web after the web has been formed. The additive composition can improve various properties of the sheet-like product. For instance, in one embodiment, the additive composition can reduce lint and increase softness.

    摘要翻译: 公开了片状产品,例如纸巾产品,其含有添加剂组合物。 添加剂组合物例如包含含有α-烯烃聚合物,乙烯 - 羧酸共聚物或其混合物的水分散体。 α-烯烃聚合物可以包含乙烯和辛烯的互聚物,而乙烯 - 羧酸共聚物可以包含乙烯 - 丙烯酸共聚物。 添加剂组合物还可以含有分散剂,例如脂肪酸。 添加剂组合物可以通过与用于形成纤维网的纤维组合而结合到组织纤维网中。 或者,添加剂组合物可以在幅材已经形成之后局部施加到幅材上。 添加剂组合物可以改善片状产品的各种性质。 例如,在一个实施方案中,添加剂组合物可以减少绒毛并增加柔软度。

    ADDITIVE COMPOSITIONS FOR TREATING VARIOUS BASE SHEETS
    32.
    发明申请
    ADDITIVE COMPOSITIONS FOR TREATING VARIOUS BASE SHEETS 有权
    用于处理各种基片的添加剂组合物

    公开(公告)号:US20070295464A1

    公开(公告)日:2007-12-27

    申请号:US11763262

    申请日:2007-06-14

    IPC分类号: B31F1/12 D21H27/30

    摘要: Wiping products are disclosed comprising a sheet and an additive composition. The additive composition, for instance, comprises an aqueous dispersion containing an alpha-olefin polymer, an ethylene-carboxylic acid copolymer, or mixtures thereof. The alpha-olefin polymer may comprise an interpolymer of ethylene and octene, while the ethylene-carboxylic acid copolymer may comprise ethylene-acrylic acid copolymer. The additive composition may also contain a dispersing agent, such as a fatty acid. The additive composition may be incorporated into the sheet by being combined with the fibers that are used to form the sheet. Alternatively, the additive composition may be topically applied to the sheet after the sheet has been formed. For instance, in one embodiment, the additive composition may be applied to the sheet as a creping adhesive during a creping operation. The additive composition may improve the strength of the sheet and/or improve the perceived softness of the sheet.

    摘要翻译: 公开了包含片材和添加剂组合物的擦拭产品。 添加剂组合物例如包含含有α-烯烃聚合物,乙烯 - 羧酸共聚物或其混合物的水分散体。 α-烯烃聚合物可以包含乙烯和辛烯的互聚物,而乙烯 - 羧酸共聚物可以包含乙烯 - 丙烯酸共聚物。 添加剂组合物还可以含有分散剂,例如脂肪酸。 添加剂组合物可以通过与用于形成片材的纤维组合而结合到片材中。 或者,可以在片材形成之后将添加剂组合物局部施用于片材。 例如,在一个实施方案中,添加剂组合物可以在起皱操作期间作为起皱粘合剂施加到片材上。 添加剂组合物可以提高片材的强度和/或改善片材感觉到的柔软度。

    SOURCE/DRAIN IMPLANTATION AND CHANNEL STRAIN TRANSFER USING DIFFERENT SIZED SPACERS AND RELATED SEMICONDUCTOR DEVICE
    33.
    发明申请
    SOURCE/DRAIN IMPLANTATION AND CHANNEL STRAIN TRANSFER USING DIFFERENT SIZED SPACERS AND RELATED SEMICONDUCTOR DEVICE 审中-公开
    使用不同尺寸的间距和相关半导体器件的源/漏极植入和通道应变传输

    公开(公告)号:US20070254420A1

    公开(公告)日:2007-11-01

    申请号:US11380743

    申请日:2006-04-28

    摘要: Methods for source/drain implantation and strain transfer to a channel of a semiconductor device and a related semiconductor device are disclosed. In one embodiment, the method includes using a first size spacer for deep source/drain implantation adjacent a gate region of a semiconductor device; and using a second, smaller size spacer for silicide formation adjacent the gate region and transferring strain from a stress liner to a channel underlying the gate region. One embodiment of a semiconductor device may include a gate region atop a substrate; a spacer including a spacer core and an outer spacer member about the spacer core; a deep source/drain region within the substrate and distanced from the spacer; and a silicide region within the substrate and overlapping and extending beyond the deep source/drain region, the silicide region aligned to the spacer.

    摘要翻译: 公开了用于源极/漏极注入和应变转移到半导体器件和相关半导体器件的沟道的方法。 在一个实施例中,该方法包括使用与半导体器件的栅极区域相邻的深源极/漏极注入的第一尺寸间隔物; 并且使用第二较小尺寸的间隔物,用于邻近栅极区域的硅化物形成,并将应变从应力衬垫转移到栅极区域下方的沟道。 半导体器件的一个实施例可以包括位于衬底顶部的栅极区域; 间隔件,其包括间隔件芯和围绕所述间隔件芯的外部间隔件; 衬底内的深源极/漏极区域,并远离间隔物; 以及衬底内的硅化物区域,并且重叠并延伸超过深源极/漏极区域,硅化物区域与间隔物对准。

    Premoistened tissue products
    34.
    发明申请
    Premoistened tissue products 审中-公开
    预感薄纸制品

    公开(公告)号:US20070137811A1

    公开(公告)日:2007-06-21

    申请号:US11304490

    申请日:2005-12-15

    摘要: Premoistened wiping products are disclosed. The premoistened wiping products contain one or more wetlaid tissue webs. The tissue webs may contain an additive composition which includes a thermoplastic resin. Once the additive composition is applied to the web, the web is embossed forming liquid resistant embossments. The embossments also form bond areas that can bond multiple plies of the tissue webs together. Once embossed, the one or more tissue webs are then contacted with a wiping solution in order to form the premoistened product.

    摘要翻译: 公开了预润湿的擦拭产品。 预润湿的擦拭产品包含一个或多个湿法成网织物。 组织纤维网可以含有包含热塑性树脂的添加剂组合物。 一旦将添加剂组合物施加到幅材上,则将幅材压花形成耐液压浮雕。 压花也形成粘合区域,其可以将多个层组织网粘合在一起。 一旦压花,然后将一个或多个薄纸网与擦拭溶液接触,以形成预润湿产品。

    Creping process and products made therefrom
    35.
    发明申请
    Creping process and products made therefrom 有权
    起皱过程和由此制成的产品

    公开(公告)号:US20070137810A1

    公开(公告)日:2007-06-21

    申请号:US11304063

    申请日:2005-12-15

    摘要: Tissue products are disclosed containing an additive composition. The additive composition, for instance, comprises an aqueous dispersion containing an alpha-olefin polymer, an ethylene-carboxylic acid copolymer, or mixtures thereof. The alpha-olefin polymer may comprise an interpolymer of ethylene and octene, while the ethylene-carboxylic acid copolymer may comprise ethylene-acrylic acid copolymer. The additive composition may also contain a dispersing agent, such as a fatty acid. The additive composition may be incorporated into the tissue web by being combined with the fibers that are used to form the web. Alternatively, the additive composition may be topically applied to the web after the web has been formed. For instance, in one embodiment, the additive composition may be applied to the web as a creping adhesive during a creping operation. The additive composition may improve the strength of the tissue web without substantially affecting the perceived softness of the web in an adverse manner.

    摘要翻译: 公开了含有添加剂组合物的组织产品。 添加剂组合物例如包含含有α-烯烃聚合物,乙烯 - 羧酸共聚物或其混合物的水分散体。 α-烯烃聚合物可以包含乙烯和辛烯的互聚物,而乙烯 - 羧酸共聚物可以包含乙烯 - 丙烯酸共聚物。 添加剂组合物还可以含有分散剂,例如脂肪酸。 添加剂组合物可以通过与用于形成纤维网的纤维组合而结合到组织纤维网中。 或者,添加剂组合物可以在幅材已经形成之后局部施加到幅材上。 例如,在一个实施方案中,添加剂组合物可以在起皱操作期间作为起皱粘合剂施加到幅材上。 添加剂组合物可以改善组织织物的强度,而不会以不利的方式基本上影响纤维网的感觉到的柔软度。

    Deep trench capacitor with buried plate electrode and isolation collar
    36.
    发明申请
    Deep trench capacitor with buried plate electrode and isolation collar 有权
    深沟槽电容器,埋置电极和隔离环

    公开(公告)号:US20050133846A1

    公开(公告)日:2005-06-23

    申请号:US10741203

    申请日:2003-12-19

    CPC分类号: H01L27/1087 H01L29/945

    摘要: A deep trench capacitor used in a trench DRAM includes a buried plate and an isolation collar. The deep trench is bottle-shaped, and the isolation collar is formed in upper portion of the wider region of the bottle-shaped trench. The buried plate surrounds the lower portion of the wider part of the bottle-shaped trench, and hemispherical grain polysilicon lines the walls of at least the lower portion of the wider part of the trench. A nitride liner layer lines the inner walls of the oxide collar and prevents diffusion of dopant through the oxide collar into the substrate when the HSG polysilicon and the doped buried plate are formed. The buried plate region is self-aligned to the isolation collar. The depth of the top of the wider part of the bottle shape and the bottom depth of the isolation collar are determined by successive resist deposition and recessing steps.

    摘要翻译: 在沟槽DRAM中使用的深沟槽电容器包括掩埋板和隔离环。 深沟是瓶形的,并且隔离套环形成在瓶形沟槽的较宽区域的上部。 掩埋板围绕瓶形沟槽的较宽部分的下部,半球状晶粒多晶硅线路至少沟槽较宽部分的下部的壁。 当形成HSG多晶硅和掺杂掩埋板时,氮化物衬垫层线化氧化物环的内壁并防止掺杂剂通过氧化物环到衬底中的扩散。 掩埋板区域与隔离套环自对准。 通过连续的抗蚀剂沉积和凹陷步骤确定瓶子形状的较宽部分的顶部的深度和隔离环的底部深度。