公开(公告)号：US08459182B2

公开(公告)日：2013-06-11

申请号：US12884678

申请日：2010-09-17

申请人： James Kenton Odle ,  Theodore William Frentzel, Jr. ,  George Y. Thomson, Jr. ,  Kirk D. Bailey ,  William Jennings Briers, III ,  Peter Christopher Baiocco

发明人： James Kenton Odle ,  Theodore William Frentzel, Jr. ,  George Y. Thomson, Jr. ,  Kirk D. Bailey ,  William Jennings Briers, III ,  Peter Christopher Baiocco

IPC分类号： B41F27/12

CPC分类号： G03F7/24 ,  B41N6/00

摘要： A method and apparatus of securing and tensioning a printing form in an apparatus having a rotatable drum, comprising positioning a first portion of the printing form over a first set of pins that are coupled to a surface of the drum. The first portion of the printing form is then stamped onto the first set of pins thereby securing the first portion of the printing form to the drum. A rotatable member having a second set of pins is rotated so that the circumferential distance between the first set of pins and the second set of pins, is about equal to the length of the printing form. The drum is rotated until a second portion of the printing form is positioned above the second set of pins. The second portion of the printing form is then stamped onto the second set of pins.

摘要翻译： 一种在具有可旋转滚筒的设备中固定和张紧打印形式的方法和装置，包括将打印形式的第一部分定位在联接到滚筒表面的第一组销上。 然后将印刷形式的第一部分冲压到第一组销上，从而将印刷形式的第一部分固定到滚筒上。 具有第二组销的可旋转构件被旋转，使得第一组销和第二组销之间的周向距离大约等于打印形式的长度。 滚筒旋转直到打印形式的第二部分位于第二组销上方。 然后将打印形式的第二部分冲压到第二组销上。

公开(公告)号：US20120067235A1

公开(公告)日：2012-03-22

申请号：US12884678

申请日：2010-09-17

申请人： JAMES KENTON ODLE ,  Theodore William Frentzel, JR. ,  George Y. Thomson, JR. ,  Kirk D. Bailey ,  William Jennings Briers, III ,  Peter Christopher Baiocco

发明人： JAMES KENTON ODLE ,  Theodore William Frentzel, JR. ,  George Y. Thomson, JR. ,  Kirk D. Bailey ,  William Jennings Briers, III ,  Peter Christopher Baiocco

IPC分类号： B41F27/06 ,  B41L3/04

CPC分类号： G03F7/24 ,  B41N6/00

摘要： A method and apparatus of securing and tensioning a printing form in an apparatus having a rotatable drum, comprising positioning a first portion of the printing form over a first set of pins that are coupled to a surface of the drum. The first portion of the printing form is then stamped onto the first set of pins thereby securing the first portion of the printing form to the drum. A rotatable member having a second set of pins is rotated so that the circumferential distance between the first set of pins and the second set of pins, is about equal to the length of the printing form. The drum is rotated until a second portion of the printing form is positioned above the second set of pins. The second portion of the printing form is then stamped onto the second set of pins.

摘要翻译： 一种在具有可旋转滚筒的设备中固定和张紧打印形式的方法和装置，包括将打印形式的第一部分定位在联接到滚筒表面的第一组销上。 然后将印刷形式的第一部分冲压到第一组销上，从而将印刷形式的第一部分固定到滚筒上。 具有第二组销的可旋转构件被旋转，使得第一组销和第二组销之间的周向距离大约等于打印形式的长度。 滚筒旋转直到打印形式的第二部分位于第二组销上方。 然后将打印形式的第二部分冲压到第二组销上。

公开(公告)号：US20070254420A1

公开(公告)日：2007-11-01

申请号：US11380743

申请日：2006-04-28

申请人： Atul Ajmera ,  Christopher Baiocco ,  Xiangdong Chen ,  Thomas Dyer ,  Sunfei Fang ,  Wenzhi Gao

发明人： Atul Ajmera ,  Christopher Baiocco ,  Xiangdong Chen ,  Thomas Dyer ,  Sunfei Fang ,  Wenzhi Gao

IPC分类号： H01L21/338 ,  H01L21/20 ,  H01L29/76

CPC分类号： H01L21/823425 ,  H01L21/823412 ,  H01L21/823468 ,  H01L21/823807 ,  H01L21/823864 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7843

摘要： Methods for source/drain implantation and strain transfer to a channel of a semiconductor device and a related semiconductor device are disclosed. In one embodiment, the method includes using a first size spacer for deep source/drain implantation adjacent a gate region of a semiconductor device; and using a second, smaller size spacer for silicide formation adjacent the gate region and transferring strain from a stress liner to a channel underlying the gate region. One embodiment of a semiconductor device may include a gate region atop a substrate; a spacer including a spacer core and an outer spacer member about the spacer core; a deep source/drain region within the substrate and distanced from the spacer; and a silicide region within the substrate and overlapping and extending beyond the deep source/drain region, the silicide region aligned to the spacer.

摘要翻译： 公开了用于源极/漏极注入和应变转移到半导体器件和相关半导体器件的沟道的方法。 在一个实施例中，该方法包括使用与半导体器件的栅极区域相邻的深源极/漏极注入的第一尺寸间隔物; 并且使用第二较小尺寸的间隔物，用于邻近栅极区域的硅化物形成，并将应变从应力衬垫转移到栅极区域下方的沟道。 半导体器件的一个实施例可以包括位于衬底顶部的栅极区域; 间隔件，其包括间隔件芯和围绕所述间隔件芯的外部间隔件; 衬底内的深源极/漏极区域，并远离间隔物; 以及衬底内的硅化物区域，并且重叠并延伸超过深源极/漏极区域，硅化物区域与间隔物对准。

公开(公告)号：US20060046428A1

公开(公告)日：2006-03-02

申请号：US10929990

申请日：2004-08-30

申请人： Christopher Baiocco ,  An Steegen ,  Ying Zhang

发明人： Christopher Baiocco ,  An Steegen ,  Ying Zhang

IPC分类号： H01L21/76

CPC分类号： H01L21/76232

摘要： A lateral trench in a semiconductor substrate is formed by the following steps. Form a lateral implant mask (LIM) over a top surface of the semiconductor substrate. Implant a heavy dopant concentration into the substrate through the LIM to form a lateral implant region (LIR) in the substrate. Strip the LIM exposing the top surface of the substrate. Form an epitaxial silicon layer over the top surface of the substrate burying the LIR. Form a trench mask over the epitaxial layer. Etch a trench reaching through the epitaxial layer and the LIR. Form oxidized trench sidewalls, an oxidized trench bottom and oxidized sidewalls of the LIR. Etch the oxidized sidewalls of the LIR until the LIR is exposed. Form laterally extending trenches by etching away the LIR.

摘要翻译： 通过以下步骤形成半导体衬底中的横向沟槽。 在半导体衬底的顶表面上形成横向植入掩模（LIM）。 通过LIM将重掺杂浓度植入到衬底中，以在衬底中形成横向植入区域（LIR）。 剥离LIM暴露衬底的顶部表面。 在掩埋LIR的衬底的顶表面上形成外延硅层。 在外延层上形成沟槽掩模。 蚀刻穿过外延层和LIR的沟槽。 形成氧化的沟槽侧壁，氧化沟槽底部和LIR的氧化侧壁。 蚀刻LIR的氧化侧壁，直到LIR暴露。 通过蚀刻掉LIR形成横向延伸的沟槽。

公开(公告)号：US20070202654A1

公开(公告)日：2007-08-30

申请号：US11307928

申请日：2006-02-28

申请人： Atul Ajmera ,  Christopher Baiocco ,  Xiangdong Chen ,  Wenzhi Gao ,  Young Way Teh

发明人： Atul Ajmera ,  Christopher Baiocco ,  Xiangdong Chen ,  Wenzhi Gao ,  Young Way Teh

IPC分类号： H01L21/336

CPC分类号： H01L29/7843 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/7833

摘要： Process for enhancing strain in a channel with a stress liner, spacer, process for forming integrated circuit and integrated circuit. A first spacer composed of an first oxide and first nitride layer is applied to a gate electrode on a substrate, and a second spacer composed of a second oxide and second nitride layer is applied. Deep implanting of source and drain in the substrate occurs, and removal of the second nitride, second oxide, and first nitride layers.

摘要翻译： 通过应力衬垫，间隔物，集成电路形成工艺和集成电路增强通道中的应变的方法。 将由第一氧化物和第一氮化物层构成的第一间隔物施加到基板上的栅电极，并施加由第二氧化物和第二氮化物层构成的第二间隔物。 在衬底中深入植入源极和漏极，并且去除第二氮化物，第二氧化物和第一氮化物层。

公开(公告)号：US09874693B2

公开(公告)日：2018-01-23

申请号：US14735622

申请日：2015-06-10

申请人： Christopher Baiocco ,  Douglas Coolbaugh ,  Gerald Leake

发明人： Christopher Baiocco ,  Douglas Coolbaugh ,  Gerald Leake

IPC分类号： G02B6/12 ,  G02B6/13 ,  G02B6/134 ,  H01L21/762 ,  G02B6/124 ,  G02B6/136 ,  H01L21/265 ,  H01L29/66 ,  H01L29/78

CPC分类号： G02B6/13 ,  G02B6/12004 ,  G02B6/124 ,  G02B6/1347 ,  G02B6/136 ,  G02B2006/121 ,  G02B2006/12169 ,  H01L21/26506 ,  H01L21/762 ,  H01L29/665 ,  H01L29/66537 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor structure can include an active device FET region having a FET and a photonics region having a photonic device including a waveguide. A semiconductor structure can include an active device FET region having a FET and a trench isolation region having a photonic device that includes a waveguide. A method can include forming a FET at an active device FET region of a semiconductor structure. A method can include forming a photonic device at a trench isolation region of a semiconductor structure.