公开(公告)号：US06379993B1

公开(公告)日：2002-04-30

申请号：US09666505

申请日：2000-09-20

申请人： Takashi Nakano ,  Kohichi Arai ,  Nobukazu Teranishi ,  Nobuhiko Mutoh

发明人： Takashi Nakano ,  Kohichi Arai ,  Nobukazu Teranishi ,  Nobuhiko Mutoh

IPC分类号： H01L21339

CPC分类号： H01L31/186 ,  H01L27/14806 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A semiconductor substrate has a sensor disposed in a surface layer on an entrance surface thereof for receiving incident light, and an intermediate-refractive-index film is disposed on the entire entrance surface of the semiconductor substrate either directly or with an insulating film interposed therebetween. The intermediate-refractive-index film has a refractive index lower than the semiconductor substrate and a low hydrogen permeability thin film is disposed on an entrance surface of the intermediate-refractive-index film and having refractive index lower than the intermediate-refractive-index film the thin film being permeable to hydrogen. The intermediate-refractive-index film serves as a reflection-resistant film. Reflections of incident light applied through the thin film and the reflection-resistant film of the sensor of the semiconductor substrate are suppressed. The intermediate-refractive-index film has a hole defined therein for passage of hydrogen therethrough upon hydrogen alloying. After the thin film is formed on the surface of the intermediate-refractive-index film, hydrogen passes through the hole in the intermediate-refractive-index film to reach the surface of the semiconductor substrate near the sensor upon hydrogen alloying.

摘要翻译： 半导体基板具有设置在其入射面上的表面层中的传感器，用于接收入射光，并且中间折射率膜直接设置在半导体衬底的整个入射面上，或者设置在绝缘膜之间。 中间折射率膜的折射率低于半导体基板，低透氢性薄膜设置在中折射率膜的入射面上，折射率低于中折射率膜 该薄膜可透过氢气。 中等折射率膜用作抗反射膜。 通过半导体衬底的传感器的薄膜和抗反射膜施加的入射光的反射被抑制。 中间折射率膜在氢合金化时具有限定在其中的氢气通过的孔。 在中间折射率膜的表面上形成薄膜之后，氢通过中间折射率膜的孔，在氢合金化之后到达传感器附近的半导体衬底的表面。

公开(公告)号：US6064069A

公开(公告)日：2000-05-16

申请号：US972565

申请日：1997-11-18

申请人： Takashi Nakano ,  Nobukazu Teranishi

发明人： Takashi Nakano ,  Nobukazu Teranishi

IPC分类号： G01J1/58 ,  H01L27/14 ,  H01L27/146 ,  H01L27/148 ,  H01L31/0232 ,  H04N5/30

CPC分类号： H01L27/14806 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14818

摘要： A solid state camera element having photodiode provided on a matrix and shielding film formed in the layer above the circumference of photodiode, wherein fluorescence film is provided in the layer above any one of photodiodes or in the layer above photodiode, extending from the top surface to the lower layer of shielding film. Interference filter of one or multiple layers is provided in the layer above fluorescence film for transmitting an absorption wavelength and reflecting a luminescence wavelength of the fluorescence film. Also, N well of photodiode is formed deep in the substrate and the peak wavelength of sensitivity is shifted to a longer wavelength side from the normal setting peak value of 550 nm. Therefore, the present invention can enhance the blue sensitivity of the solid state camera element by using fluorescent pigment without causing cross talk with a neighboring photodiode.

摘要翻译： 一种固态照相机元件，其具有设置在矩阵上的光电二极管和形成在光电二极管周围的层内的屏蔽膜，其中，荧光膜设置在光电二极管上方的层中或者光电二极管上方的层中，从上表面延伸到 下层屏蔽膜。 在荧光膜上方设置一层或多层的干涉滤光片，用于透射吸收波长并反射荧光膜的发光波长。 此外，光电二极管的N阱形成在衬底的深处，并且灵敏度的峰值波长从550nm的正常设定峰值偏移到较长波长侧。 因此，本发明可以通过使用荧光颜料来增强固态照相机元件的蓝色灵敏度，而不会与相邻的光电二极管发生串扰。

公开(公告)号：US5541412A

公开(公告)日：1996-07-30

申请号：US348112

申请日：1994-11-25

申请人： Akio Tanaka ,  Nobukazu Teranishi

发明人： Akio Tanaka ,  Nobukazu Teranishi

IPC分类号： G01K3/00 ,  G01J1/02 ,  G01J5/08 ,  H01L27/14 ,  H01L27/146 ,  H01L35/02 ,  H01L31/00

CPC分类号： G01J5/02 ,  G01J5/024 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0846 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14649 ,  G01J2005/0077 ,  H01L2924/0002

摘要： An infrared ray image pickup device has a two-dimensional array structure having a sensor substrate, a plurality of scanning circuits provided to form two dimensional arrays on a surface of the substrate, a layer having a plurality of cavities provided over the scanning circuits, a plurality of beams provided to extend over the cavities, each of the beams including an element for converting a temperature variation to an electric signal, a supporting element provided on a peripheral region of the substrate for supporting a lens substrate including a plurality of micro-lenses that are located to face the beams so that a convex portion of each of the micro-lenses is spaced from a top of each of the beams by the same distance as a focal distance of the micro-lenses. The supporting element may have a plurality of convex portions made of boron phosphate silicate glass or boron silicate glass. Alternatively, the supporting element may include a plurality of bearings provided on a packaging substrate and bonding agents surrounding the bearings, the packaging substrate being provided thereon with the sensor substrate.

摘要翻译： 一种红外线图像拾取装置具有二维阵列结构，其具有传感器基板，多个扫描电路，设置成在基板的表面上形成二维阵列，在扫描电路上设置有多个空腔的层， 多个光束设置成在空腔上延伸，每个光束包括用于将温度变化转换成电信号的元件，设置在基板的周边区域上的支撑元件，用于支撑包括多个微透镜的透镜基板 它们被定位成面对光束，使得每个微透镜的凸部与每个光束的顶部间隔与微透镜的焦距相同的距离。 支撑元件可以具有由硼酸磷酸盐玻璃或硼硅酸盐玻璃制成的多个凸部。 或者，支撑元件可以包括设置在包装基板上的多个轴承和围绕轴承的粘合剂，其上设置有传感器基板的包装基板。

公开(公告)号：US4939573A

公开(公告)日：1990-07-03

申请号：US361669

申请日：1989-05-31

申请人： Nobukazu Teranishi ,  Akiyoshi Kohno

发明人： Nobukazu Teranishi ,  Akiyoshi Kohno

IPC分类号： H04N9/04

CPC分类号： H04N9/045

摘要： White, yellow, and cyan color filters are superposed in rows and columns on picture elements of a solid-state color imaging apparatus. In each recurring cycle of four-row and two-column filters, the green component of light is transmitted through all filters.

摘要翻译： 白色，黄色和青色滤色器以固体彩色成像装置的图像元素的行和列重叠。 在四行和两列滤波器的每个循环周期中，光的绿色分量通过所有滤波器传输。

公开(公告)号：US4527182A

公开(公告)日：1985-07-02

申请号：US304301

申请日：1981-09-21

申请人： Yasuo Ishihara ,  Eiji Oda ,  Nobukazu Teranishi

发明人： Yasuo Ishihara ,  Eiji Oda ,  Nobukazu Teranishi

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L29/78

CPC分类号： H01L27/14654 ,  H01L27/14887

摘要： A semiconductor imager comprises a first and a second region (41, 42) which have a conductivity type opposite to a substrate (21) and are reverse biassed relative to the substrate beneath photosensitive regions (22) of each row and a reading device (26, 33) for the row, respectively, to be completely and not to be completely depleted, respectively. The imager may or may not comprise such a covering region (77) on each photosensitive region as may have the conductivity type of the first and the second regions and be not completely depleted. It is possible to provide a line sensor or a photodiode of a similar structure. Preferably, the first and the second regions have a common impurity concentration lower than the photosensitive regions and are respectively thinner and thicker relative to each other. The covering region preferably has the impurity concentration of each channel stopper (23).

摘要翻译： 半导体成像器包括第一和第二区域（41,42），其具有与基板（21）相反的导电类型，并且相对于每行的光敏区域（22）下方的基板被反向偏压，并且读取装置（26 ，33）分别完全不完全耗尽。 成像器可以或可以不在每个光敏区域上包括这样的覆盖区域（77），如可以具有第一和第二区域的导电类型，并且不能完全耗尽。 可以提供类似结构的线传感器或光电二极管。 优选地，第一和第二区域具有低于感光区域的共同杂质浓度，并且彼此分别更薄和更厚。 覆盖区域优选具有各通道塞子（23）的杂质浓度。