摘要:
A high frequency power amplifier is provided that prevents loop oscillation at a low frequency caused by a closed loop formed between combined semiconductor devices. Previously, coupled-line directional couplers or capacitors for low frequency rejection have been used to prevent the closed loop from being formed. Also, a circuit including a resistance component required for attenuating self-oscillation has been provided. Therefore, to prevent both loop oscillation and self oscillation, two circuits have been required. Accordingly, a high frequency power amplifier is provided with a low frequency prevention circuit that attenuates the passing of each frequency of loop oscillation and self oscillation to each signal line divided by a power divider. Thus, the two circuits respectively required for preventing the loop oscillation and self oscillation of a travelling wave combine type amplifier can be formed by one low frequency prevention circuit.
摘要:
An antenna for radio apparatus comprises a first conductor taking a helical form, a second conductor which extends to and fro in sequence substantially in a direction of the center axis of the helical form of the first conductor to take, as a whole, a meandering form which is spaced apart from the first conductor and surrounds the center axis, and a dielectric member which lies at least between the first and second conductors. A portion of the first conductor is electrically connected to a portion of the second conductor, and either a portion of the first conductor or a portion of the second conductor acts as a feeding point.
摘要:
A high-frequency power amplifier comprises a pair of FETs, a divider which supplies opposite-phase versions of a signal to be amplified to the FETs, distributed-parameter transmission lines connected respectively at one ends thereof to output electrodes of the FETs, and a combiner which combines signals appearing at another ends of the transmission lines into a signal of a common phase. Stubs which short-circuit for even harmonics included in output signals of the FETs are connected respectively to the transmission lines at positions distant from the output electrodes of the FETs by a multiple of a quarter wavelength of the fundamental wave included in the output signals of the FETs. A first capacitor is connected between the transmission lines at positions distant from the output electrodes of the FETs by the 1/12 wavelength of the fundamental wave included in the output signals of the FETs so that the output electrodes of the FETs are open for the third harmonic, and a second capacitor is connected between the transmission lines at positions between the connecting positions of the first capacitor and the connecting positions of the stubs so as to perform impedance matching for the fundamental wave included in the output signals of the FETs.
摘要:
The envelope tracking power supply includes a plurality of variable voltage supplies. A power supply controller of a power amplifier controls the plurality of variable voltage supplies so as to precisely divide the power supply voltage in a high frequency area, based on the voltage distribution of a received transmitted base band signal, in order to maximize the power added efficiency of the power amplifier. The power supply controller includes a threshold memory including a plurality of first zones, and a frequency memory including a plurality of second zones. The power supply controller changes the threshold held in the first zones so that each second zone approaches the average of the second zones.
摘要:
An RF amplifying device includes a transmission line transformer coupled to an output electrode of a power transistor for generating transmission power to be fed to an antenna. The transmission power from the output electrode of the power transistor is fed to one end of a main line of the transmission line transformer, and one end of a secondary line of the transmission line transformer is coupled to an AC grounding node. The other end of the secondary line is coupled to the one end of the main line, thereby generating the transmission power. Coupling energy is transmitted from the secondary line to the main line. Coupling members electrically coupled to the output electrode of the power transistor are electrically coupled to a joint formed in either the main line, or the secondary line, at part of the energy coupling part.
摘要:
The invention provides a wide-band, low-noise, and small-sized high frequency power amplifier that has small temperature dependence of the gain and is excellent in input matching. A parallel circuit consisting of a resistor whose resistance depends strongly on temperature and a conventional resistor is inserted serially into a signal path in an input matching circuit of an amplification unit, and resistances of the resistors are set to appropriate values, for example, about 2/3 times an input impedance of the amplification unit.
摘要:
An object of the present invention is to provide a radio frequency power amplifier of multi stage amplifying method that is designed to reduce instability of output power caused by electromagnetic coupling of bias supply terminals and interconnections of each stage to thereby operate stably. Another object of the present invention is to provide a radio frequency power amplifier that is designed to reduce distortion of output power caused by electromagnetic coupling of bias supply terminals and interconnections of each stage to thereby provide high efficiency. The above objects can be achieved by providing a first interconnection connected to a terminal for supplying a voltage for collector driving to a power amplifying transistor, a second interconnection connected to a terminal for supplying a voltage for collector driving to a second transistor controlling a base bias voltage of the above transistor, and one or more ground parts for electromagnetic shield, wherein the first interconnection and the second interconnection are separated by one or more of the ground parts for electromagnetic shield.
摘要:
There are provided a high-frequency amplifier and a high-frequency module having a high efficiency for an extensive input modulated signal power, and base station/mobile wireless machines using the amplifier or the module.The high-frequency amplifier includes a circuit that detects an envelope of an input modulated signal; a control signal generator circuit (a voltage controlled circuit or a current controlled circuit) that can change a voltage or a current according to a given function on the basis of a magnitude of the detected envelope signal; and a diode clamped variable power circuit that connects a plurality of diode clamped circuits each including a diode, a transistor, and a DC power supply to one another.
摘要:
There are provided a high-frequency amplifier and a high-frequency module having a high efficiency for an extensive input modulated signal power, and base station/mobile wireless machines using the amplifier or the module.The high-frequency amplifier includes a circuit that detects an envelope of an input modulated signal; a control signal generator circuit (a voltage controlled circuit or a current controlled circuit) that can change a voltage or a current according to a given function on the basis of a magnitude of the detected envelope signal; and a diode clamped variable power circuit that connects a plurality of diode clamped circuits each including a diode, a transistor, and a DC power supply to one another.
摘要:
An object of the present invention is to provide a radio frequency power amplifier of multi stage amplifying method that is designed to reduce instability of output power caused by electromagnetic coupling of bias supply terminals and interconnections of each stage to thereby operate stably. Another object of the present invention is to provide a radio frequency power amplifier that is designed to reduce distortion of output power caused by electromagnetic coupling of bias supply terminals and interconnections of each stage to thereby provide high efficiency. The above objects can be achieved by providing a first interconnection connected to a terminal for supplying a voltage for collector driving to a power amplifying transistor, a second interconnection connected to a terminal for supplying a voltage for collector driving to a second transistor controlling a base bias voltage of the above transistor, and one or more ground parts for electromagnetic shield, wherein the first interconnection and the second interconnection are separated by one or more of the ground parts for electromagnetic shield.