公开(公告)号：US20090096045A1

公开(公告)日：2009-04-16

申请号：US12335271

申请日：2008-12-15

申请人： Jun HAYAKAWA ,  Hideo Ohno ,  Shoji Ikeda

发明人： Jun HAYAKAWA ,  Hideo Ohno ,  Shoji Ikeda

IPC分类号： H01L29/82 ,  G11C11/22 ,  G11C11/16

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01L43/10

摘要： A fast and very low-power-consuming nonvolatile memory. A nonvolatile magnetic memory includes a high-output tunnel magnetoresistive device, in which spin-transfer torque is used for writing. A tunnel magnetoresistive device has a structure such that a ferromagnetic film of a body-centered cubic structure containing Co, Fe, and B, a MgO insulator film of a rock-salt structure oriented in (100), and a ferromagnetic film are stacked.

摘要翻译： 快速且功耗非常低的非易失性存储器。 非易失性磁存储器包括高输出隧道磁阻器件，其中使用自旋转移转矩来进行写入。 隧道磁阻器件具有这样的结构，使得包含Co，Fe和B的体心立方结构的铁磁膜，（100）中取向的岩盐结构的MgO绝缘膜和铁磁膜被堆叠。

公开(公告)号：US20080105938A1

公开(公告)日：2008-05-08

申请号：US11905789

申请日：2007-10-04

申请人： Hideo Ohno ,  Shoji Ikeda ,  Jun Hayakawa

发明人： Hideo Ohno ,  Shoji Ikeda ,  Jun Hayakawa

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/16 ,  H01L27/228

摘要： A magnetic memory cell and a magnetic random access memory that are highly reliable and low-power consuming. An upper electrode having a connecting area smaller than the area of a ferromagnetic free layer of a magnetic memory cell is connected to the ferromagnetic free layer. A current is applied to produce an uneven magnetic field over the magnetic memory cell, whereby spin-transfer torque magnetization reversal can be realized with low current and at small write error rate.

摘要翻译： 磁存储单元和磁性随机存取存储器是高可靠性和低功耗的。 具有小于磁存储单元的铁磁性自由层的面积的连接面积的上部电极连接到铁磁性自由层。 施加电流以在磁存储单元上产生不均匀的磁场，由此可以以低电流和小的写错误率实现自旋转移转矩磁化反转。

公开(公告)号：US06727522B1

公开(公告)日：2004-04-27

申请号：US09850732

申请日：2001-06-06

申请人： Masashi Kawasaki ,  Hideo Ohno

发明人： Masashi Kawasaki ,  Hideo Ohno

IPC分类号： H01L3300

CPC分类号： H01S5/0261 ,  H01L27/15 ,  H01L29/22 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/7317 ,  H01L29/78 ,  H01L29/78618 ,  H01L29/7869 ,  H01L33/28

摘要： A transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like. A channel layer 11 formed of a transparent semiconductor such as zinc oxide ZnO. A transparent electrode is used for all of a source 12, a drain 13 and a gate 14, or a part of them. As the transparent electrode, a transparent conductive material such as conductive ZnO doped with, for example, group III elements is used. As a gate insulating layer 15, a transparent insulative material such as insulative ZnO doped with elements capable of taking a valence of one as a valence number or group V elements is used. If a substrate 16 must be transparent, for example, glass, sapphire, plastic or the like can be used as a transparent material.

摘要翻译： 提供了通过使用由氧化锌等制成的透明沟道层而完全和部分透明的晶体管。 由诸如氧化锌ZnO的透明半导体形成的沟道层11。 一个透明电极用于所有的源12，漏极13和栅极14或其一部分。 作为透明电极，使用掺杂有例如III族元素的透明导电材料，例如导电ZnO。 作为栅极绝缘层15，使用透明绝缘材料，例如掺杂有能够以1价或1价V价元素为一价元素的绝缘性ZnO。 如果衬底16必须是透明的，例如可以使用玻璃，蓝宝石，塑料等作为透明材料。

公开(公告)号：US06614046B2

公开(公告)日：2003-09-02

申请号：US09777366

申请日：2001-02-12

申请人： Hideo Ohno ,  Yuzo Ohno ,  Shuya Kishimoto

发明人： Hideo Ohno ,  Yuzo Ohno ,  Shuya Kishimoto

IPC分类号： H01L2906

CPC分类号： B82Y25/00 ,  H01F10/3213 ,  H01L29/66984 ,  Y10S977/712

摘要： A nuclear spin control device comprises a first semiconducting layer with spin-up carriers, a second semiconducting layer with spin-down carriers; and a third semiconducting layer arranged between the first and the second semiconducting layers. The third semiconducting layer can be tunnelled selectively by the spin-up carriers and the spin-down carriers such that nuclear spin in the third semiconducting layer selectively interacts with the carriers so as to be oriented into a desired direction. The device may be adapted to control the shape of a wave function so as to cover nuclear spins in the third semiconducting layer and propagate information of one nuclear spin to another nuclear spin.

摘要翻译： 核自旋控制装置包括具有自旋载流子的第一半导体层，具有自旋向下载流子的第二半导体层; 以及布置在第一和第二半导体层之间的第三半导体层。 第三半导电层可以由自旋载流子和自旋向下载流子选择性地隧道切割，使得第三半导体层中的核自旋选择性地与载流子相互作用以被定向到期望的方向。 该装置可以适于控制波函数的形状，以覆盖第三半导体层中的核自旋，并将一个核自旋的信息传播到另一个核自旋。

公开(公告)号：US06563174B2

公开(公告)日：2003-05-13

申请号：US10224879

申请日：2002-08-21

申请人： Masashi Kawasaki ,  Hideo Ohno ,  Kazuki Kobayashi ,  Ikuo Sakono

发明人： Masashi Kawasaki ,  Hideo Ohno ,  Kazuki Kobayashi ,  Ikuo Sakono

IPC分类号： H01L2701

CPC分类号： H01L29/7869 ,  H01L27/1214 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603

摘要： In a thin film transistor, a gate insulating film having a first insulating film and a second insulating film is formed on a gate electrode, and a semiconductor layer including ZnO etc. is formed on the second insulating film. The first insulating film is formed by using SiNx having a high insulating characteristic, and the second insulating film is formed by using an oxide (for example, SiO2). This structure improves a crystalline characteristic of the semiconductor layer that constitutes an interface in combination with the second insulating film, and decreases a defective level of the interface between the semiconductor layer and the second insulating film. Further, the second insulating film is constituted of the oxide, so that it is possible to restrain a material for the second insulating film from depriving oxygen of the semiconductor layer. This keeps a crystalline characteristic of the semiconductor layer under a preferable condition in the vicinity of the interface between the second insulating film and the semiconductor layer. As a result, it is possible to realize a thin film transistor such that: a leak current level at an OFF area is low, and the mobility is high, and a switching characteristic is preferable. Thus, in the thin film transistor having a transparent semiconductor film, a TFT characteristic is improved.

摘要翻译： 在薄膜晶体管中，在栅电极上形成具有第一绝缘膜和第二绝缘膜的栅极绝缘膜，并且在第二绝缘膜上形成包括ZnO等的半导体层。 第一绝缘膜通过使用具有高绝缘特性的SiNx形成，并且第二绝缘膜通过使用氧化物（例如，SiO 2）形成。 该结构改善了构成与第二绝缘膜结合的界面的半导体层的结晶特性，并降低了半导体层与第二绝缘膜之间的界面的缺陷水平。 此外，第二绝缘膜由氧化物构成，使得可以抑制第二绝缘膜的材料剥夺半导体层的氧。 这在第二绝缘膜和半导体层之间的界面附近的优选条件下保持半导体层的结晶特性。 结果，可以实现薄膜晶体管，使得在OFF区域的漏电流水平低，并且迁移率高，并且切换特性是优选的。 因此，在具有透明半导体膜的薄膜晶体管中，提高了TFT特性。

公开(公告)号：US06482729B2

公开(公告)日：2002-11-19

申请号：US09799722

申请日：2001-03-07

申请人： Hideo Ohno ,  Fumihiro Matsukura

发明人： Hideo Ohno ,  Fumihiro Matsukura

IPC分类号： H01L2128

CPC分类号： B82Y15/00 ,  B82Y25/00 ,  H01F10/3213 ,  H01F10/3254 ,  H01L29/66984

摘要： A semiconductor device for generating spin-polarized conduction electrons including a ferromagnetic semiconductor layer and a non-magnetic semiconductor layer having a band alignment of Type II with respect to the ferromagnetic semiconductor, said ferromagnetic semiconductor layer and non-magnetic semiconductor layer being connected together directly or with interposing therebetween another non-magnetic semiconductor layer or energy barrier layer such that a spin splitting of a conduction band of the non-magnetic semiconductor layer is induced by a spontaneous spin splitting of a valence band of the ferromagnetic semiconductor layer, and spin-polarized conduction electrons are generated in the non-magnetic semiconductor layer by the spin splitting of the conduction band of the non-magnetic semiconductor layer.

摘要翻译： 一种半导体器件，用于产生包括铁磁半导体层和相对于铁磁半导体的II型带对准的非磁性半导体层的自旋极化传导电子，所述铁磁半导体层和非磁性半导体层直接连接在一起 或者介于另一非磁性半导体层或能量阻挡层之间，使得非磁性半导体层的导带的自旋分裂是由铁磁半导体层的价带的自发旋转分裂引起的， 通过非磁性半导体层的导带的自旋分裂，在非磁性半导体层中产生极化的导电电子。

公开(公告)号：US4637866A

公开(公告)日：1987-01-20

申请号：US785091

申请日：1985-10-04

申请人： Satoshi Konishi ,  Hideo Ohno ,  Yuji Naruse ,  Hiroshi Yoshida

发明人： Satoshi Konishi ,  Hideo Ohno ,  Yuji Naruse ,  Hiroshi Yoshida

IPC分类号： C01B4/00 ,  C25B1/02 ,  G21F9/06

CPC分类号： G21F9/06 ,  C25B1/02

摘要： The present invention is concerned with a process for recovering tritium from tritiated water wherein a gas stream containing tritiated water steam is conducted into an electrolytic cell within which is disposed an oxygen ion conductive solid electrolytic membrane having a cathode and an anode disposed upon the opposite surfaces thereof. As a result of the electrolysis process, tritium gas is collected from the cathode side of the electrolytic cell, while oxygen gas is collected from the anode side of the electrolytic cell.

摘要翻译： 本发明涉及从氚化水中回收氚的方法，其中将含有氚化水蒸汽的气流导入电解槽中，其中设置氧离子导电固体电解质膜，阴离子和阳极设置在相对表面上 其中。 作为电解处理的结果，从电解池的阴极侧收集氚气，同时从电解池的阳极侧收集氧气。

公开(公告)号：US09153306B2

公开(公告)日：2015-10-06

申请号：US14356739

申请日：2011-11-08

申请人： Hideo Ohno ,  Shoji Ikeda ,  Hiroyuki Yamamoto ,  Yosuke Kurosaki ,  Katsuya Miura

发明人： Hideo Ohno ,  Shoji Ikeda ,  Hiroyuki Yamamoto ,  Yosuke Kurosaki ,  Katsuya Miura

IPC分类号： G11C11/16 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22

CPC分类号： G11C11/161 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： Provided is a tunnel magnetoresistive effect element such that a high TMR ratio and a low write current can be realized, and the thermal stability factor (E/kBT) of a recording layer and a pinned layer is increased while an increase in resistance of the element as a whole is suppressed, thus enabling a stable operation. On at least one of a recording layer 21 and a pinned layer 22 each comprising CoFeB, electrically conductive oxide layers 31 and 32 are disposed on a side opposite to a tunnel barrier layer 10.

摘要翻译： 提供了可以实现高TMR比和低写入电流的隧道磁阻效应元件，并且记录层和钉扎层的热稳定性因子（E / kBT）增加，同时元件的电阻增加 整体上被抑制，能够进行稳定的动作。 在每个包含CoFeB的记录层21和被钉扎层22中的至少一个上，导电氧化物层31和32设置在与隧道势垒层10相对的一侧。

公开(公告)号：US09070457B2

公开(公告)日：2015-06-30

申请号：US13480303

申请日：2012-05-24

申请人： Hideo Ohno ,  Shoji Ikeda ,  Michihiko Yamanouchi ,  Hideo Sato ,  Katsuya Miura

发明人： Hideo Ohno ,  Shoji Ikeda ,  Michihiko Yamanouchi ,  Hideo Sato ,  Katsuya Miura

IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L43/08 ,  H01F10/32 ,  H01L27/22

CPC分类号： G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L43/08 ,  Y10T428/1114

摘要： In magnetic tunnel junctions manufactured with use of a ferromagnetic material having perpendicular magnetic anisotropy, a difference in record retention time depending on stored information due to an imbalance in thermal stability between a parallel state and an anti-parallel state of magnetization, which correspond to bit information, is alleviated. A reference layer and a recording layer which constitute a magnetic tunnel junction are made different in area from each other so as to correct the difference in record retention time corresponding to stored information.

摘要翻译： 在使用具有垂直磁各向异性的铁磁材料制造的磁性隧道结中，根据存储的信息，由于平行状态和反平行磁化状态之间的热稳定性不平衡而导致的记录保留时间的差异，其对应于位 信息得到缓解。 构成磁性隧道结的参考层和记录层的面积彼此不同，以便校正与存储的信息相对应的记录保留时间的差异。

公开(公告)号：US08993351B2

公开(公告)日：2015-03-31

申请号：US13997057

申请日：2011-12-20

申请人： Hiroki Yamamoto ,  Tadashi Morita ,  Hideo Ohno ,  Shoji Ikeda

发明人： Hiroki Yamamoto ,  Tadashi Morita ,  Hideo Ohno ,  Shoji Ikeda

IPC分类号： H01L21/00 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC分类号： H01L43/12 ,  H01L43/08 ,  H01L43/10

摘要： [Object] To provide a method of manufacturing a perpendicular magnetization-type magnetic element, which does not need a step of depositing MgO.[Solving Means] The method of manufacturing a magnetoresistive element 1 according to the present invention includes laminating a first layer 30 on a base 10, the first layer 30 including a material containing at least one of Co, Ni, and Fe. Next, a second layer 40 is laminated on the first layer 30, the second layer 40 including Mg. Next, the Mg in the second layer 40 is oxidized to form MgO by applying an oxidation treatment to a laminated body including the first layer 30 and the second layer 40. Next, the second layer 40 is crystallized by applying a heat treatment to the laminated body, and the first layer 30 is caused to be perpendicularly magnetized. According to the manufacturing method, it is possible to manufacture a perpendicular magnetization-type CoFeB—MgO magnetic element without causing a problem arising from the deposition of MgO.

摘要翻译： 提供一种不需要沉积MgO的步骤的垂直磁化型磁性元件的制造方法。 本发明的磁阻元件1的制造方法包括在基体10上层叠第一层30，第一层30包括含有Co，Ni和Fe中的至少一种的材料。 接着，在第一层30上层压第二层40，第二层40包含Mg。 接下来，通过对包括第一层30和第二层40的层叠体进行氧化处理，将第二层40中的Mg氧化形成MgO。接着，通过对层叠的第一层30和第二层40进行热处理，使第二层40结晶化 使第一层30垂直磁化。 根据该制造方法，可以制造垂直磁化型CoFeB-MgO磁性元件，而不会引起由MgO的沉积引起的问题。