公开(公告)号：US08079277B2

公开(公告)日：2011-12-20

申请号：US12105327

申请日：2008-04-18

申请人： Sun Lee Bang ,  Min Ho Kim ,  Soo Jun Park ,  Seon Hee Park

发明人： Sun Lee Bang ,  Min Ho Kim ,  Soo Jun Park ,  Seon Hee Park

IPC分类号： A61B5/00 ,  A61B5/103 ,  A61B5/117 ,  G01L5/16 ,  G01N33/48 ,  G01C17/38 ,  H03F1/26 ,  H04B15/00

CPC分类号： A61B5/1116 ,  A61B5/1117 ,  A61B5/1123 ,  A61B5/6887 ,  A61B5/7264 ,  A61B2505/07 ,  A61B2562/08 ,  G06F19/00 ,  G06F19/3481 ,  G06K9/00342 ,  G16H50/20

摘要： Apparatus and method for refining subject activity classification for the recognition of daily activities of a subject, and a system for recognizing daily activities using the same. The refining apparatus improves the correctness of subject activity classification using daily activities of a subject, activation time information of sensors mounted on objects associated with the daily activities of the subject, and the suitability of a continuous activity pattern in relation to the daily activities. This improves the correctness of subject activity classification that becomes basic information in daily activity analysis.

摘要翻译： 用于提炼受试者活动分类以识别受试者的日常活动的装置和方法，以及用于识别使用该受试者的日常活动的系统。 精炼装置使用受试者的日常活动，安装在与受试者的日常活动相关的物体上的传感器的激活时间信息以及与日常活动相关的连续活动模式的适合性来改善受试者活动分类的正确性。 这提高了作为日常活动分析的基本信息的主体活动分类的正确性。

公开(公告)号：US08008647B2

公开(公告)日：2011-08-30

申请号：US11907169

申请日：2007-10-10

申请人： Seong Eun Park ,  Min Ho Kim ,  Jae Woong Han

发明人： Seong Eun Park ,  Min Ho Kim ,  Jae Woong Han

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L31/00 ,  H01L31/0248

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/34333

摘要： There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type nitride semiconductor layer; and an active layer disposed between the p-type and n-type nitride layers, the active layer comprising a plurality of quantum barrier layers and quantum well layers deposited alternately on each other, wherein the active layer has a superlattice structure where the quantum barrier layer has a thickness for enabling a carrier injected from the p-type and n-type nitride semiconductor layers to be tunneled therethrough, and at least one of the quantum barrier layers has an energy band gap greater than another quantum barrier layer adjacent to the n-type nitride semiconductor layer.

摘要翻译： 提供了包括超晶格结构的有源层的氮化物半导体器件。 氮化物半导体器件包括：p型氮化物半导体层; n型氮化物半导体层; 以及设置在所述p型和n型氮化物层之间的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和量子阱层，其中所述有源层具有超晶格结构，其中所述量子势垒层 具有能够使从p型和n型氮化物半导体层注入的载流子穿过其中的厚度，并且至少一个量子势垒层具有比与n-型氮化物半导体层相邻的另一个量子势垒层更大的能带隙。 氮化物半导体层。

公开(公告)号：US20110053134A1

公开(公告)日：2011-03-03

申请号：US12822851

申请日：2010-06-24

申请人： Ho Youl JUNG ,  Chan Yong Park ,  Min Ho Kim ,  Soo Jun Park ,  Seon Hee Park

发明人： Ho Youl JUNG ,  Chan Yong Park ,  Min Ho Kim ,  Soo Jun Park ,  Seon Hee Park

IPC分类号： G09B7/00

CPC分类号： G09B5/00 ,  G09B1/00

摘要： A sensor-based teaching aid assembly includes: a plurality of teaching aid parts having a unique ID, detecting their location and adjacent teaching aid parts through an internal sensor, and transmitting result data to outside; and an information processing terminal displaying an image of an assembly target structure, analyzing the data received from the plurality of teaching aid parts to evaluate a completion degree of the structure assembled by the plurality of teaching aid parts, and displaying the evaluation results.

摘要翻译： 基于传感器的教学辅助组件包括：具有唯一ID的多个教学辅助部件，通过内部传感器检测其位置和相邻教学辅助部件，并将结果数据传送到外部; 以及信息处理终端，其显示装配目标结构的图像，分析从多个教学辅助部件接收的数据，以评估由多个教学辅助部件组装的结构的完成度，并​​显示评估结果。

公开(公告)号：US07514720B2

公开(公告)日：2009-04-07

申请号：US11442961

申请日：2006-05-31

申请人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Myong Soo Cho

发明人： Min Ho Kim ,  Masayoshi Koike ,  Kyeong Ik Min ,  Myong Soo Cho

IPC分类号： H01L29/201

CPC分类号： H01L25/0756 ,  H01L27/15 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.

摘要翻译： 本发明涉及使用晶片接合或金属接合的单片白光发光器件。 在本发明中，提供导电基座。 第一发光体通过金属层粘合在导电基座上。 在第一光发射器中，从底部到顶部依次层叠p型氮化物半导体层，第一有源层，n型氮化物半导体层和导电性基板。 此外，在导电基板的局部区域上形成第二发光体。 在第二发光体中，从底部到顶部依次层叠p型AlGaInP系半导体层，有源层及n型AlGaInP系半导体层。 另外，在导体基座基板的下侧形成有p电极，在n型AlGaInP系半导体层的上表面形成n电极。

公开(公告)号：US5916719A

公开(公告)日：1999-06-29

申请号：US935449

申请日：1997-09-23

申请人： Min Ho Kim ,  Jae Ho Sim

发明人： Min Ho Kim ,  Jae Ho Sim

IPC分类号： G03G5/04 ,  C08L25/14 ,  C09B11/28 ,  G03G5/05 ,  G03G5/06 ,  G09F9/00 ,  H01J9/227 ,  G03G5/047

CPC分类号： C09B11/28

摘要： styrene-acrylic copolymer is used as an organic binder, thioxanxene derivative is used as an electron receptor and tetraphenylbutadiene derivative is used as an electron donor to produce a color display panel which has a low decomposition temperature, a high electron transferring ability and a charge maintenance ability to manufacture a color display panel without a change of brightness and color coordinates in a fluorescent screen.

摘要翻译： 使用苯乙烯 - 丙烯酸共聚物作为有机粘合剂，将噻恶丹衍生物用作电子受体，并且使用四苯基丁二烯衍生物作为电子给体，以制备具有低分解温度，高电子转移能力和电荷维持性的彩色显示面板 能够在荧光屏中不改变亮度和颜色坐标来制造彩色显示面板。