公开(公告)号：US20130089938A1

公开(公告)日：2013-04-11

申请号：US13340658

申请日：2011-12-29

申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  SHOU-SHAN FAN

发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  SHOU-SHAN FAN

IPC分类号： H01L33/60 ,  H01L33/62

CPC分类号： B82Y20/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44

摘要： A method for making light emitting diode is provided. The method includes following steps. A light emitting diode chip is provided, wherein the light emitting diode chip comprises a first semiconductor layer, an active layer and a second semiconductor layers stacked together in that order. A patterned mask layer is located on a surface of the first semiconductor layer, wherein the patterned mask layer includes a number of bar-shaped protruding structures aligned side by side, and a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed portion of the first semiconductor layer is etched to form a protruding pair. A number of M-shaped three-dimensional nano-structures are formed by removing the mask layer. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.

摘要翻译： 提供一种制造发光二极管的方法。 该方法包括以下步骤。 提供了一种发光二极管芯片，其中发光二极管芯片包括按顺序堆叠在一起的第一半导体层，有源层和第二半导体层。 图案化的掩模层位于第一半导体层的表面上，其中图案化掩模层包括多个并排排列的条形突出结构，并且在每个两个相邻的突出结构之间限定狭缝以暴露部分 第一半导体层。 蚀刻第一半导体层的暴露部分以形成突出的一对。 通过去除掩模层形成多个M形的三维纳米结构。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。

公开(公告)号：US20120324724A1

公开(公告)日：2012-12-27

申请号：US13332486

申请日：2011-12-21

申请人： PENG LIU ,  QUN-QING LI ,  KAI-LI JIANG ,  SHOU-SHAN FAN

发明人： PENG LIU ,  QUN-QING LI ,  KAI-LI JIANG ,  SHOU-SHAN FAN

IPC分类号： H05K3/30

CPC分类号： H01L45/06 ,  H01L45/126 ,  H01L45/144

摘要： A method for making phase change memory is provided. The method includes following steps. A substrate is provided. A plurality of first row electrode leads and the second row electrode leads is located on the substrate. A carbon nanotube layer is applied on the substrate to cover the first row electrode lead and the second row electrode lead. The carbon nanotube layer is patterned to form a plurality of carbon nanotube units located on the second row electrode lead. A phase change layer is applied on the surface of each carbon nanotube unit. A plurality of first electrodes, a plurality of second electrodes, a plurality of first row electrode leads and a plurality of second row electrode leads is located on the substrate.

摘要翻译： 提供了一种制造相变存储器的方法。 该方法包括以下步骤。 提供基板。 多个第一行电极引线和第二行电极引线位于基板上。 在基板上涂布碳纳米管层以覆盖第一行电极引线和第二行电极引线。 图案化碳纳米管层以形成位于第二行电极引线上的多个碳纳米管单元。 在每个碳纳米管单元的表面上施加相变层。 多个第一电极，多个第二电极，多个第一行电极引线和多个第二行电极引线位于基板上。

公开(公告)号：US20120045172A1

公开(公告)日：2012-02-23

申请号：US12979314

申请日：2010-12-27

申请人： JUN-BO FENG ,  QUN-QING LI ,  SHOU-SHAN FAN

发明人： JUN-BO FENG ,  QUN-QING LI ,  SHOU-SHAN FAN

IPC分类号： G02B6/34

CPC分类号： G02B6/30 ,  G02B6/124 ,  G02B6/34 ,  G02B6/3644 ,  G02B6/3652

摘要： A method for removing phosphorus and nitrogen from an activated sludge wastewater treatment system is provided consisting of one or more anaerobic zones followed by two or more activated sludge reactors operating in parallel each having independent aeration/mixing means, whereby the utilization of the influent organic carbon under anoxic conditions, and thereby, the selection of denitrifying phosphate accumulating organisms (DNPAOs) over non-denitrifying phosphate accumulating organisms (PAOs), is maximized in order to further maximize the removal of phosphorus and nitrogen in the wastewater treatment system.

摘要翻译： 提供一种从活性污泥废水处理系统中除去磷和氮的方法，其由一个或多个厌氧区组成，其后是两个或更多个平行运行的活性污泥反应器，每个活性污泥反应器具有独立的曝气/混合装置，由此利用进水有机碳 在缺氧条件下，最大限度地选择非反硝化磷酸盐蓄积生物（PAO）的反硝化磷酸盐蓄积生物（DNPAO），以进一步最大限度地去除废水处理系统中的磷和氮。

公开(公告)号：US20110297966A1

公开(公告)日：2011-12-08

申请号：US12970234

申请日：2010-12-16

申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  SHOU-SHAN FAN

发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  SHOU-SHAN FAN

IPC分类号： H01L33/00 ,  B82Y99/00

CPC分类号： H01L33/20 ,  H01L33/02 ,  H01L2933/0083

摘要： A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. The second semiconductor layer has a plurality of three-dimensional nano-structures. Each of the plurality of three-dimensional nano-structures has a stepped structure.

摘要翻译： 发光二极管包括基板，第一半导体层，有源层，第二半导体层，第一电极和第二电极。 第一半导体层，有源层和第二半导体层有序堆叠在基板上。 第一电极电连接到第一半导体层。 第二电极电连接到第二半导体层。 第二半导体层具有多个三维纳米结构。 多个三维纳米结构中的每一个具有阶梯状结构。

公开(公告)号：US20130152992A1

公开(公告)日：2013-06-20

申请号：US13572766

申请日：2012-08-13

申请人： YUAN-HAO JIN ,  QUN-QING LI ,  SHOU-SHAN FAN

发明人： YUAN-HAO JIN ,  QUN-QING LI ,  SHOU-SHAN FAN

IPC分类号： H01L31/0224 ,  H01L31/042

CPC分类号： H01L31/068 ,  H01L31/022425 ,  H01L31/0687 ,  H01L31/1804 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell system includes a number of P-N junction cells, a number of inner electrodes, a first collecting electrode and a second collecting electrode. The number of the P-N junction cells is M. M is equal to or greater than 2. The M P-N junction cells are arranged from a first P-N junction cell to an Mth P-N junction cell along a straight line. The P-N junction cells are arranged in series along the straight line. The number of the inner electrodes is M−1. At least one inner electrode includes a carbon nanotube array. A first collecting electrode located on an outside surface of the first P-N junction cell. A second collecting electrode located on an outside surface of the Mth P-N junction cell. A photoreceptive surface is parallel to the straight line.

摘要翻译： 太阳能电池系统包括多个P-N结电池，多个内电极，第一集电极和第二集电极。 P-N结电池的数量为M.M等于或大于2.M P-N结电池沿着直线从第一P-N结电池排列到第M个P-N结电池。 P-N结电池沿着直线串联排列。 内部电极的数量为M-1。 至少一个内部电极包括碳纳米管阵列。 位于第一P-N结电池的外表面上的第一集电极。 位于第M个P-N结电池的外表面上的第二集电极。 感光面平行于直线。

公开(公告)号：US20130146119A1

公开(公告)日：2013-06-13

申请号：US13474920

申请日：2012-05-18

申请人： YUAN-HAO JIN ,  QUN-QING LI ,  SHOU-SHAN FAN

发明人： YUAN-HAO JIN ,  QUN-QING LI ,  SHOU-SHAN FAN

IPC分类号： H01L31/052 ,  H01L31/05

CPC分类号： H01L31/0504 ,  H01L31/035272 ,  H01L31/043 ,  H01L31/047 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： A solar cell system includes two solar cells. The two solar cells are located in contact with each other and connected in parallel. Each of the two solar cells includes a first electrode layer, a P-type silicon layer, an N-type silicon layer, and a second electrode layer. The first electrode layer, the P-type silicon layer, the N-type silicon layer, and the second electrode layer are arranged in series side by side along a first direction and in contact with each other, thereby cooperatively forming a integrated structure. A P-N junction is formed near an interface between the P-type silicon layer and the N-type silicon layer. The integrated structure has a first surface substantially parallel to the first direction and a second surface opposite to the first surface. The first surface is used as a photoreceptive surface to directly receive incident light.

摘要翻译： 太阳能电池系统包括两个太阳能电池。 两个太阳能电池彼此接触并且并联连接。 两个太阳能电池中的每一个包括第一电极层，P型硅层，N型硅层和第二电极层。 第一电极层，P型硅层，N型硅层和第二电极层沿着第一方向并排布置并且彼此接触，从而协同地形成一体结构。 在P型硅层和N型硅层之间的界面附近形成P-N结。 一体结构具有基本上平行于第一方向的第一表面和与第一表面相对的第二表面。 第一个表面被用作感光表面直接接收入射光。

公开(公告)号：US20130089709A1

公开(公告)日：2013-04-11

申请号：US13340194

申请日：2011-12-29

申请人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  YUAN-HAO JIN ,  SHOU-SHAN FAN

发明人： ZHEN-DONG ZHU ,  QUN-QING LI ,  LI-HUI ZHANG ,  MO CHEN ,  YUAN-HAO JIN ,  SHOU-SHAN FAN

IPC分类号： B32B3/30

CPC分类号： B81C1/00111 ,  B82Y30/00 ,  Y10T428/24479 ,  Y10T428/2457

摘要： A three-dimensional nano-structure array includes a substrate and a number of three-dimensional nano-structures. Each three-dimensional nano-structure has a first peak and a second peak aligned side by side. A first groove is defined between the first peak and the second peak. A second groove is defined between the two adjacent three-dimensional nano-structures. A depth of the first groove is lower than that of the second groove.

摘要翻译： 三维纳米结构阵列包括基底和多个三维纳米结构。 每个三维纳米结构具有并排排列的第一峰和第二峰。 在第一峰和第二峰之间限定第一凹槽。 在两个相邻的三维纳米结构之间限定第二凹槽。 第一槽的深度低于第二槽的深度。

公开(公告)号：US20130062001A1

公开(公告)日：2013-03-14

申请号：US13662704

申请日：2012-10-29

申请人： KAI-LI JIANG ,  CHEN FENG ,  LIN XIAO ,  ZHUO CHEN ,  LIANG LIU ,  SHOU-SHAN FAN ,  QUN-QING LI ,  LI QIAN ,  YANG WEI

发明人： KAI-LI JIANG ,  CHEN FENG ,  LIN XIAO ,  ZHUO CHEN ,  LIANG LIU ,  SHOU-SHAN FAN ,  QUN-QING LI ,  LI QIAN ,  YANG WEI

IPC分类号： B32B38/00

CPC分类号： B32B38/0012 ,  B29C55/04 ,  B29K2105/162 ,  B32B37/04 ,  B32B37/12 ,  B32B2038/0028 ,  B82Y30/00 ,  C04B2235/5256 ,  C04B2235/5268 ,  C04B2235/5288 ,  D02J1/22

摘要： A method for laying carbon nanotube film includes following steps. A carbon nanotube film is provided. The carbon nanotube film includes a number of carbon nanotube strings substantially parallel to each other and extending along a first direction. The carbon nanotube film is stretched along a second direction substantially perpendicular with the first direction to form a deformation along the second direction. The carbon nanotube film is placed on a surface of a substrate. The deformation along the second direction is kept.

摘要翻译： 铺设碳纳米管膜的方法包括以下步骤。 提供碳纳米管膜。 碳纳米管膜包括基本上彼此平行并沿着第一方向延伸的多个碳纳米管串。 碳纳米管膜沿着与第一方向大致垂直的第二方向拉伸以形成沿着第二方向的变形。 将碳纳米管膜放置在基板的表面上。 保持沿着第二方向的变形。

公开(公告)号：US20120315761A1

公开(公告)日：2012-12-13

申请号：US13588222

申请日：2012-08-17

申请人： HAI-LIN SUN ,  KAI-LI JIANG ,  QUN-QING LI ,  SHOU-SHAN FAN

发明人： HAI-LIN SUN ,  KAI-LI JIANG ,  QUN-QING LI ,  SHOU-SHAN FAN

IPC分类号： H01L21/768

CPC分类号： C01B33/06 ,  C30B23/00 ,  C30B29/10 ,  C30B29/60

摘要： A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, a silicon substrate and a growing device, and the growing device including a reacting room are provided. Secondly, a silicon dioxide layer is formed on a surface of the silicon substrate. Thirdly, a titanium layer is formed on the silicon dioxide layer. Fourthly, the silicon substrate is placed into the reacting room, and the reacting room is heated to a temperature of 500˜1000° C. Finally, a plurality of nickel cluster is formed onto the surface of the silicon substrate.

摘要翻译： 一种制造硅化镍纳米线的方法，该方法包括以下步骤。 首先，提供硅衬底和生长装置，并且提供包括反应室的生长装置。 其次，在硅衬底的表面上形成二氧化硅层。 第三，在二氧化硅层上形成钛层。 第四，将硅衬底放置在反应室中，并将反应室加热到500〜1000℃的温度。最后，在硅衬底的表面上形成多个镍簇。

公开(公告)号：US20120200017A1

公开(公告)日：2012-08-09

申请号：US13450740

申请日：2012-04-19

申请人： KAI-LI JIANG ,  CHEN FENG ,  LIN XIAO ,  ZHUO CHEN ,  LIANG LIU ,  SHOU-SHAN FAN ,  QUN-QING LI ,  LI QIAN ,  KAI LIU ,  YANG WEI

发明人： KAI-LI JIANG ,  CHEN FENG ,  LIN XIAO ,  ZHUO CHEN ,  LIANG LIU ,  SHOU-SHAN FAN ,  QUN-QING LI ,  LI QIAN ,  KAI LIU ,  YANG WEI

IPC分类号： F16F3/08 ,  B32B5/16 ,  B82Y30/00

CPC分类号： G06F3/045 ,  B82Y10/00 ,  B82Y30/00 ,  Y10T428/30

摘要： An elastic device includes a first elastic supporter; a second elastic supporter and a carbon nanotube film. The second elastic supporter is spaced from the first elastic supporter. The carbon nanotube film has a first side fixed on the first elastic supporter and a second side opposite to the first side and fixed on the second elastic supporter.The carbon nanotube film includes a plurality of carbon nanotube strings separately arranged, located side by side and extending substantially along a first direction from the first side to the second side and one or more carbon nanotubes located between adjacent carbon nanotube strings. The carbon nanotube film is capable of elastic deformation along a second direction that is substantially perpendicular to the first direction.

摘要翻译： 弹性装置包括第一弹性支撑件; 第二弹性支撑体和碳纳米管膜。 第二弹性支撑件与第一弹性支撑件间隔开。 碳纳米管膜具有固定在第一弹性支撑体上的第一侧和与第一侧相反的第二侧并且固定在第二弹性支撑体上。 碳纳米管膜包括多个并排布置并且基本上沿着从第一侧到第二侧的第一方向延伸并且位于相邻碳纳米管串之间的一个或多个碳纳米管的碳纳米管柱。 碳纳米管膜能够沿着与第一方向基本垂直的第二方向弹性变形。