公开(公告)号：US07671387B2

公开(公告)日：2010-03-02

申请号：US12179320

申请日：2008-07-24

申请人： Kazuhiro Fujikawa ,  Shin Harada ,  Kenichi Hirotsu ,  Satoshi Hatsukawa ,  Takashi Hoshino ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

发明人： Kazuhiro Fujikawa ,  Shin Harada ,  Kenichi Hirotsu ,  Satoshi Hatsukawa ,  Takashi Hoshino ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

IPC分类号： H01L29/80

CPC分类号： H01L29/0634 ,  H01L29/1058 ,  H01L29/1066 ,  H01L29/42316 ,  H01L29/66893 ,  H01L29/808

摘要： A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.

摘要翻译： 横向结型场效应晶体管包括布置在源/漏区域之间的第三半导体层中的第一栅电极层，具有在第二半导体层上延伸的下表面，并且掺杂有比第二半导体层更重的p型杂质 以及布置在源极/漏极区域之间的第五半导体层中的第二栅极电极层，具有在第四半导体层上延伸的下表面，具有与第一栅极电极层基本相同的p型杂质浓度，以及 具有与第一栅极电极层相同的电位。 因此，横向结型场效应晶体管具有可以在保持良好的击穿电压特性的同时降低导通电阻的结构。

公开(公告)号：US07625447B2

公开(公告)日：2009-12-01

申请号：US10549683

申请日：2004-03-18

申请人： Jun Suda ,  Hiroyuki Matsunami ,  Norio Onojima

发明人： Jun Suda ,  Hiroyuki Matsunami ,  Norio Onojima

IPC分类号： C30B23/00

CPC分类号： C30B29/406 ,  C30B23/002 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661

摘要： SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This problem is solved as follows. The surface of a SiC substrate 1 is rendered into a step-terrace structure by performing a heating process in an atmosphere of HCl gas. The surface of the SiC substrate 1 is then treated sequentially with aqua regia, hydrochloric acid, and hydrofluoric acid. A small amount of silicon oxide film formed on the surface of the SiC substrate 1 is etched so as to form a clean SiC surface 3 on the substrate surface. The SiC substrate 1 is then installed in a high-vacuum apparatus and the pressure inside is maintained at ultrahigh vacuum (such as 10−6 to 10−8 Pa). In the ultrahigh vacuum state, a process of irradiating the surface with a Ga atomic beam 5 at time t1 at temperature of 800° C. or lower and performing a heating treatment at 800° C. or higher is repeated at least once. The temperature is then set to the growth temperature of an AlN film, and the SiC substrate surface 3 is initially irradiated with Al atoms 8a in ultrahigh vacuum state, followed by the feeding of N atoms 8b.

摘要翻译： SiC是非常稳定的物质，在传统的III族氮化物晶体生长装置中难以控制SiC表面适合于晶体生长的状态。 这个问题解决如下。 通过在HCl气体气氛中进行加热处理，将SiC衬底1的表面制成台阶平台结构。 然后依次用王水，盐酸和氢氟酸处理SiC衬底1的表面。 蚀刻形成在SiC衬底1的表面上的少量氧化硅膜，从而在衬底表面上形成清洁的SiC表面3。 然后将SiC基板1安装在高真空装置中，并且内部的压力保持在超高真空（例如10-6至10-8Pa）。 在超高真空状态下，在800℃以下的温度下在时刻t1的Ga原子束5照射表面，进行800℃以上的加热处理的工序至少重复一次。 然后将温度设定为AlN膜的生长温度，并且首先用超高真空状态的Al原子8a照射SiC衬底表面3，然后馈送N原子8b。

公开(公告)号：US07528426B2

公开(公告)日：2009-05-05

申请号：US11337143

申请日：2006-01-20

申请人： Shin Harada ,  Kenichi Hirotsu ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

发明人： Shin Harada ,  Kenichi Hirotsu ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

IPC分类号： H01L29/808

CPC分类号： H01L29/808 ,  H01L29/0623 ,  H01L29/1066 ,  H01L29/1608

摘要： A lateral JFET has a basic structure including an n-type semiconductor layer (3) formed of an n-type impurity region and a p-type semiconductor layer formed of a p-type impurity region on the n-type semiconductor layer (3). Moreover, in the p-type semiconductor layer, there are provided a p+-type gate region layer (7) extending into the n-type semiconductor layer (3) and containing p-type impurities of an impurity concentration higher than that of the n-type semiconductor layer (3) and an n+-type drain region layer (9) spaced from the p+-type gate region layer (7) by a predetermined distance and containing n-type impurities of an impurity concentration higher than that of the n-type semiconductor layer (3). With this structure, the lateral JFET can be provided that has an ON resistance further decreased while maintaining a high breakdown voltage performance.

摘要翻译： 横向JFET具有包括由n型杂质区形成的n型半导体层（3）和在n型半导体层（3）上由p型杂质区形成的p型半导体层的基本结构， 。 此外，在p型半导体层中，设置有延伸到n型半导体层（3）中的p +型栅极区域（7），并且含有比n的杂质浓度高的p型杂质 型半导体层（3）和与p +型栅极区域（7）间隔预定距离的n +型漏极区域（9），并且含有杂质浓度高于n的n型杂质 型半导体层（3）。 利用这种结构，可以提供横向JFET，其具有进一步降低的导通电阻，同时保持高的击穿电压性能。

公开(公告)号：US07321142B2

公开(公告)日：2008-01-22

申请号：US10544017

申请日：2004-05-21

申请人： Kazuhiro Fujikawa ,  Shin Harada ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

发明人： Kazuhiro Fujikawa ,  Shin Harada ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

IPC分类号： H01L29/80

CPC分类号： H01L29/66901 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/808

摘要： On an SiC single crystal substrate, an electric field relaxation layer and a p− type buffer layer are formed. The electric field relaxation layer is formed between the p− type buffer layer and the SiC single crystal substrate to contact SiC single crystal substrate. On the p− type buffer layer, an n type semiconductor layer is formed. On the n type semiconductor layer, a p type semiconductor layer is formed. In the p type semiconductor layer, an n+ type source region layer and an n+ type drain region layer are formed separated by a prescribed distance from each other. At a part of the region of p type semiconductor layer between the n+ type source region layer and the n+ type drain region layer, a p+ type gate region layer is formed.

摘要翻译： 在SiC单晶衬底上形成电场弛豫层和p型缓冲层。 在p-型缓冲层和SiC单晶衬底之间形成电场弛豫层以接触SiC单晶衬底。 在p型缓冲层上形成n型半导体层。 在n型半导体层上形成p型半导体层。 在p型半导体层中，形成n +型源极区域和n +型漏极区域彼此分开规定的距离。 在n +型源极区域和n +型漏极区域之间的p型半导体层的区域的一部分，形成p +型栅极区域层。

公开(公告)号：US20060113574A1

公开(公告)日：2006-06-01

申请号：US10544017

申请日：2004-05-21

申请人： Kazuhiro Fujikawa ,  Shin Harada ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

发明人： Kazuhiro Fujikawa ,  Shin Harada ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

IPC分类号： H01L29/80

CPC分类号： H01L29/66901 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/808

摘要： On an SiC single crystal substrate, an electric field relaxation layer and a p− type buffer layer are formed. The electric field relaxation layer is formed between the p− type buffer layer and the SiC single crystal substrate to contact SiC single crystal substrate. On the p− type buffer layer, an n type semiconductor layer is formed. On the n type semiconductor layer, a p type semiconductor layer is formed. In the p type semiconductor layer, an n+ type source region layer and an n+ type drain region layer are formed separated by a prescribed distance from each other. At a part of the region of p type semiconductor layer between the n+ type source region layer and the n+ type drain region layer, a p+ type gate region layer is formed.

摘要翻译： 在SiC单晶衬底上形成电场弛豫层和p型缓冲层。 在p-型缓冲层和SiC单晶衬底之间形成电场弛豫层以接触SiC单晶衬底。 在p型缓冲层上形成n型半导体层。 在n型半导体层上形成p型半导体层。 在p型半导体层中，形成n +型源极区域和n +型漏极区域彼此分开规定的距离。 在n +型源极区域和n +型漏极区域之间的p型半导体层的区域的一部分，形成p +型栅极区域层。

公开(公告)号：US07049644B2

公开(公告)日：2006-05-23

申请号：US10496040

申请日：2002-12-02

申请人： Kazuhiro Fujikawa ,  Shin Harada ,  Kenichi Hirotsu ,  Satoshi Hatsukawa ,  Takashi Hoshino ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

发明人： Kazuhiro Fujikawa ,  Shin Harada ,  Kenichi Hirotsu ,  Satoshi Hatsukawa ,  Takashi Hoshino ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

IPC分类号： H01L29/80 ,  H01L31/112

CPC分类号： H01L29/0634 ,  H01L29/1058 ,  H01L29/1066 ,  H01L29/42316 ,  H01L29/66893 ,  H01L29/808

摘要： A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.

摘要翻译： 横向结型场效应晶体管包括布置在源/漏区域之间的第三半导体层中的第一栅电极层，具有在第二半导体层上延伸的下表面，并且掺杂有比第二半导体层更重的p型杂质 以及布置在源极/漏极区域之间的第五半导体层中的第二栅极电极层，具有在第四半导体层上延伸的下表面，具有与第一栅极电极层基本相同的p型杂质浓度，以及 具有与第一栅极电极层相同的电位。 因此，横向结型场效应晶体管具有可以在保持良好的击穿电压特性的同时降低导通电阻的结构。

公开(公告)号：US20060102924A1

公开(公告)日：2006-05-18

申请号：US10525753

申请日：2003-08-21

申请人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

发明人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

IPC分类号： H01L33/00

CPC分类号： H01L31/0264 ,  C30B29/10 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/24 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/32341

摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.

摘要翻译： 公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。 允许衬底1容易地沿着（10-10）平面4进行切割和分割。 使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。 具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。 还实现了消除切割余量的制造方法。

公开(公告)号：US07023033B2

公开(公告)日：2006-04-04

申请号：US10362345

申请日：2002-06-11

申请人： Shin Harada ,  Kenichi Hirotsu ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

发明人： Shin Harada ,  Kenichi Hirotsu ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

IPC分类号： H01L29/808

CPC分类号： H01L29/808 ,  H01L29/0623 ,  H01L29/1066 ,  H01L29/1608

摘要： A lateral JFET has a basic structure including an n-type semiconductor layer (3) formed of an n-type impurity region and a p-type semiconductor layer formed of a p-type impurity region on the n-type semiconductor layer (3). Moreover, in the p-type semiconductor layer, there are provided a p+-type gate region layer (7) extending into the n-type semiconductor layer (3) and containing p-type impurities of an impurity concentration higher than that of the n-type semiconductor layer (3) and an n+-type drain region layer (9) spaced from the p+-type gate region layer (7) by a predetermined distance and containing n-type impurities of an impurity concentration higher than that of the n-type semiconductor layer (3). With this structure, the lateral JFET can be provided that has an ON resistance further decreased while maintaining a high breakdown voltage performance.

公开(公告)号：US20050093017A1

公开(公告)日：2005-05-05

申请号：US10496040

申请日：2002-12-02

申请人： Kazuhiro Fujikawa ,  Shin Harada ,  Kenichi Hirotsu ,  Satoshi Hatsukawa ,  Takashi Hoshino ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

发明人： Kazuhiro Fujikawa ,  Shin Harada ,  Kenichi Hirotsu ,  Satoshi Hatsukawa ,  Takashi Hoshino ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

IPC分类号： H01L21/337 ,  H01L29/808 ,  H01L29/51

CPC分类号： H01L29/0634 ,  H01L29/1058 ,  H01L29/1066 ,  H01L29/42316 ,  H01L29/66893 ,  H01L29/808

摘要： A lateral junction field effect transistor includes a first gate electrode layer (18A) arranged in a third semiconductor layer (13) between source/drain region layers (6, 8), having a lower surface extending on the second semiconductor layer (12), and doped with p-type impurities more heavily than the second semiconductor layer (12), and a second gate electrode layer (18B) arranged in a fifth semiconductor layer (15) between the source/drain region layers (6, 8), having a lower surface extending on a fourth semiconductor layer (14), having substantially the same concentration of p-type impurities as the first gate electrode layer (18A), and having the same potential as the first gate electrode layer (18A). Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.

摘要翻译： 横向结型场效应晶体管包括布置在源极/漏极区域（6,8）之间的第三半导体层（13）中的第一栅极电极层（18A），其具有在第二半导体层（12）上延伸的下表面， 并且掺杂有比第二半导体层（12）更重的p型杂质;以及布置在源极/漏极区域（6,8）之间的第五半导体层（15）中的第二栅电极层（18B） 具有在第四半导体层（14）上延伸的下表面，其具有与第一栅极电极层（18A）大致相同的p型杂质浓度，并具有与第一栅电极层（18A）相同的电位 ）。 因此，横向结型场效应晶体管具有可以在保持良好的击穿电压特性的同时降低导通电阻的结构。