公开(公告)号：US07625447B2

公开(公告)日：2009-12-01

申请号：US10549683

申请日：2004-03-18

申请人： Jun Suda ,  Hiroyuki Matsunami ,  Norio Onojima

发明人： Jun Suda ,  Hiroyuki Matsunami ,  Norio Onojima

IPC分类号： C30B23/00

CPC分类号： C30B29/406 ,  C30B23/002 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661

摘要： SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This problem is solved as follows. The surface of a SiC substrate 1 is rendered into a step-terrace structure by performing a heating process in an atmosphere of HCl gas. The surface of the SiC substrate 1 is then treated sequentially with aqua regia, hydrochloric acid, and hydrofluoric acid. A small amount of silicon oxide film formed on the surface of the SiC substrate 1 is etched so as to form a clean SiC surface 3 on the substrate surface. The SiC substrate 1 is then installed in a high-vacuum apparatus and the pressure inside is maintained at ultrahigh vacuum (such as 10−6 to 10−8 Pa). In the ultrahigh vacuum state, a process of irradiating the surface with a Ga atomic beam 5 at time t1 at temperature of 800° C. or lower and performing a heating treatment at 800° C. or higher is repeated at least once. The temperature is then set to the growth temperature of an AlN film, and the SiC substrate surface 3 is initially irradiated with Al atoms 8a in ultrahigh vacuum state, followed by the feeding of N atoms 8b.

摘要翻译： SiC是非常稳定的物质，在传统的III族氮化物晶体生长装置中难以控制SiC表面适合于晶体生长的状态。 这个问题解决如下。 通过在HCl气体气氛中进行加热处理，将SiC衬底1的表面制成台阶平台结构。 然后依次用王水，盐酸和氢氟酸处理SiC衬底1的表面。 蚀刻形成在SiC衬底1的表面上的少量氧化硅膜，从而在衬底表面上形成清洁的SiC表面3。 然后将SiC基板1安装在高真空装置中，并且内部的压力保持在超高真空（例如10-6至10-8Pa）。 在超高真空状态下，在800℃以下的温度下在时刻t1的Ga原子束5照射表面，进行800℃以上的加热处理的工序至少重复一次。 然后将温度设定为AlN膜的生长温度，并且首先用超高真空状态的Al原子8a照射SiC衬底表面3，然后馈送N原子8b。

公开(公告)号：US20090261362A1

公开(公告)日：2009-10-22

申请号：US12496271

申请日：2009-07-01

申请人： Tetsuzo UEDA ,  Tsunenobu Kimoto ,  Hiroyuki Matsunami ,  Jun Suda ,  Norio Onojima

发明人： Tetsuzo UEDA ,  Tsunenobu Kimoto ,  Hiroyuki Matsunami ,  Jun Suda ,  Norio Onojima

IPC分类号： H01L33/00

CPC分类号： H01L21/02082 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/18 ,  H01L33/32

摘要： 4H—InGaAlN alloy based optoelectronic and electronic devices on non-polar face are formed on 4H—AlN or 4H—AlGaN on (11-20) a-face 4H—SiC substrates. Typically, non polar 4H—AlN is grown on 4H—SiC (11-20) by molecular beam epitaxy (MBE). Subsequently, III-V nitride device layers are grown by metal organic chemical vapor deposition (MOCVD) with 4H-polytype for all of the layers. The non-polar device does not contain any built-in electric field due to the spontaneous and piezoelectric polarization. The optoelectronic devices on the non-polar face exhibits higher emission efficiency with shorter emission wavelength because the electrons and holes are not spatially separated in the quantum well. Vertical device configuration for lasers and light emitting diodes (LEDs) using conductive 4H—AlGaN interlayer on conductive 4H—SiC substrates makes the chip size and series resistance smaller. The elimination of such electric field also improves the performance of high speed and high power transistors. The details of the epitaxial growth s and the processing procedures for the non-polar III-V nitride devices on the non-polar SiC substrates are also disclosed.

摘要翻译： 在（11-20）a面4H-SiC衬底上的4H-AlN或4H-AlGaN上形成4H-InGaAlN合金基非极性面上的光电子和电子器件。 通常，非极性4H-AlN通过分子束外延（MBE）在4H-SiC（11-20）上生长。 随后，通过用于所有层的4H-多型金属有机化学气相沉积（MOCVD）生长III-V族氮化物器件层。 由于自发和压电极化，非极性器件不包含任何内置的电场。 由于电子和空穴在量子阱中没有空间分离，非极性面上的光电器件表现出较短的发射波长的发射效率。 在导电4H-SiC衬底上使用导电4H-AlGaN夹层的激光器和发光二极管（LED）的垂直器件配置使芯片尺寸和串联电阻更小。 这种电场的消除也提高了高速和高功率晶体管的性能。 还公开了非极性SiC衬底上的非极性III-V族氮化物器件的外延生长细节和处理步骤。

公开(公告)号：US20050218414A1

公开(公告)日：2005-10-06

申请号：US10812416

申请日：2004-03-30

申请人： Tetsuzo Ueda ,  Tsunenobu Kimoto ,  Hiroyuki Matsunami ,  Jun Suda ,  Norio Onojima

发明人： Tetsuzo Ueda ,  Tsunenobu Kimoto ,  Hiroyuki Matsunami ,  Jun Suda ,  Norio Onojima

IPC分类号： H01L29/26 ,  H01L21/02 ,  H01L21/20 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01L33/18 ,  H01L33/32 ,  H01S5/323 ,  H01L33/00

CPC分类号： H01L21/02082 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/18 ,  H01L33/32

摘要： 4H-InGaAlN alloy based optoelectronic and electronic devices on non-polar face are formed on 4H-AlN or 4H-AlGaN on (11-20) a-face 4H-SiC substrates. Typically, non polar 4H-AlN is grown on 4H-SiC (11-20) by molecular beam epitaxy (MBE). Subsequently, III-V nitride device layers are grown by metal organic chemical vapor deposition (MOCVD) with 4H-polytype for all of the layers. The non-polar device does not contain any built-in electric field due to the spontaneous and piezoelectric polarization. The optoelectonic devices on the non-polar face exhibits higher emission efficiency with shorter emission wavelength because the electrons and holes are not spatially separated in the quantum well. Vertical device configuration for lasers and light emitting diodes(LEDs) using conductive 4H-AlGaN interlayer on conductive 4H-SiC substrates makes the chip size and series resistance smaller. The elimination of such electric field also improves the performance of high speed and high power transistors. The details of the epitaxial growth s and the processing procedures for the non-polar III-V nitride devices on the non-polar SiC substrates are also disclosed.

摘要翻译： 在（11-20）a面4H-SiC衬底上的4H-AlN或4H-AlGaN上形成4H-InGaAlN合金基非极性面上的光电子和电子器件。 通常，非极性4H-AlN通过分子束外延（MBE）在4H-SiC（11-20）上生长。 随后，通过用于所有层的4H-多型金属有机化学气相沉积（MOCVD）生长III-V族氮化物器件层。 由于自发和压电极化，非极性器件不包含任何内置的电场。 由于电子和空穴在量子阱中空间不分开，非极性面上的光电子器件表现出更高的发射效率，发射波长更短。 在导电4H-SiC衬底上使用导电4H-AlGaN夹层的激光器和发光二极管（LED）的垂直器件配置使芯片尺寸和串联电阻更小。 这种电场的消除也提高了高速和高功率晶体管的性能。 还公开了非极性SiC衬底上的非极性III-V族氮化物器件的外延生长细节和处理步骤。

公开(公告)号：US20060180077A1

公开(公告)日：2006-08-17

申请号：US10549683

申请日：2004-03-18

申请人： Jun Suda ,  Hiroyuki Matsunami ,  Norio Onojima

发明人： Jun Suda ,  Hiroyuki Matsunami ,  Norio Onojima

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/406 ,  C30B23/002 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661

摘要： SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses. This problem is solved as follows. The surface of a SiC substrate 1 is rendered into a step-terrace structure by performing a heating process in an atmosphere of HCl gas. The surface of the SiC substrate 1 is then treated sequentially with aqua regia, hydrochloric acid, and hydrofluoric acid. A small amount of silicon oxide film formed on the surface of the SiC substrate 1 is etched so as to form a clean SiC surface 3 on the substrate surface. The SiC substrate 1 is then installed in a high-vacuum apparatus and the pressure inside is maintained at ultrahigh vacuum (such as 10−6 to 10−8 Pa). In the ultrahigh vacuum state, a process of irradiating the surface with a Ga atomic beam 5 at time t1 at temperature of 800° C. or lower and performing a heating treatment at 800° C. or higher is repeated at least once. The temperature is then set to the growth temperature of an AlN film, and the SiC substrate surface 3 is initially irradiated with —Al atoms 8a in ultrahigh vacuum state, followed by the feeding of N atoms 8b.

摘要翻译： SiC是非常稳定的物质，在传统的III族氮化物晶体生长装置中难以控制SiC表面适合于晶体生长的状态。 这个问题解决如下。 通过在HCl气体气氛中进行加热处理，将SiC衬底1的表面制成台阶平台结构。 然后依次用王水，盐酸和氢氟酸处理SiC衬底1的表面。 蚀刻形成在SiC衬底1的表面上的少量氧化硅膜，从而在衬底表面上形成清洁的SiC表面3。 然后将SiC基板1安装在高真空装置中，并且内部的压力保持在超高真空（例如10 -6至10 -8 Pa）。 在超高真空状态下，在800℃以下的温度下，在时刻t 1的Ga原子束5照射表面，进行800℃以上的加热处理，至少重复一次。 然后将温度设定为AlN膜的生长温度，并且首先用超高真空状态的-Al原子8a照射SiC衬底表面3，然后馈送N原子8b。

公开(公告)号：US20060194379A1

公开(公告)日：2006-08-31

申请号：US10565624

申请日：2004-07-28

申请人： Jun Suda ,  Hiroyuki Matsunami

发明人： Jun Suda ,  Hiroyuki Matsunami

IPC分类号： H01L21/8234 ,  H01L29/76

CPC分类号： H01L21/28158 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/511 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7883 ,  H01L29/802 ,  H01L29/803

摘要： A field effect transistor comprises a SiC substrate 1, a source 3a and a drain 3b formed on the surface of the SiC substrate 1, an insulating structure comprising an AlN layer 5 formed in contact with the SiC surface and having a thickness of one molecule-layer or greater, and a SiO2 layer formed thereon, and a gate electrode 15 formed on the insulation structure. Leakage current can be controlled while the state of interface with SiC is maintained in a good condition.

摘要翻译： 场效应晶体管包括形成在SiC衬底1的表面上的SiC衬底1，源极3a和漏极3b，绝缘结构，其包括形成为与SiC表面接触并具有厚度1的AlN层5 分子层以上，形成在其上的SiO 2层，以及形成在绝缘结构上的栅电极15。 可以控制漏电流，同时与SiC的界面状态保持良好状态。

公开(公告)号：US07297989B2

公开(公告)日：2007-11-20

申请号：US10525753

申请日：2003-08-21

申请人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

发明人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

IPC分类号： H01L33/00

CPC分类号： H01L31/0264 ,  C30B29/10 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/24 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/32341

摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.

摘要翻译： 公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。 允许衬底1容易地沿着（10-10）平面4进行切割和分割。 使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。 具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。 还实现了消除切割余量的制造方法。

公开(公告)号：US07622763B2

公开(公告)日：2009-11-24

申请号：US10565624

申请日：2004-07-28

申请人： Jun Suda ,  Hiroyuki Matsunami

发明人： Jun Suda ,  Hiroyuki Matsunami

IPC分类号： H01L29/792

CPC分类号： H01L21/28158 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/511 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7883 ,  H01L29/802 ,  H01L29/803

摘要： A field effect transistor comprises a SiC substrate 1, a source 3a and a drain 3b formed on the surface of the SiC substrate 1, an insulating structure comprising an AlN layer 5 formed in contact with the SiC surface and having a thickness of one molecule-layer or greater, and a SiO2 layer formed thereon, and a gate electrode 15 formed on the insulation structure. Leakage current can be controlled while the state of interface with SiC is maintained in a good condition.

摘要翻译： 场效应晶体管包括SiC衬底1，形成在SiC衬底1的表面上的源极3a和漏极3b，绝缘结构，其包括与SiC表面接触形成的AlN层5， 层或更大，以及形成在其上的SiO 2层，以及形成在绝缘结构上的栅电极15。 可以控制漏电流，同时与SiC的界面状态保持良好状态。

公开(公告)号：US20060102924A1

公开(公告)日：2006-05-18

申请号：US10525753

申请日：2003-08-21

申请人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

发明人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

IPC分类号： H01L33/00

CPC分类号： H01L31/0264 ,  C30B29/10 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/24 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/32341

摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.

摘要翻译： 公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。 允许衬底1容易地沿着（10-10）平面4进行切割和分割。 使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。 具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。 还实现了消除切割余量的制造方法。

公开(公告)号：US20080277696A1

公开(公告)日：2008-11-13

申请号：US12179320

申请日：2008-07-24

申请人： Kazuhiro Fujikawa ,  Shin Harada ,  Kenichi Hirotsu ,  Satoshi Hatsukawa ,  Takashi Hoshino ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

发明人： Kazuhiro Fujikawa ,  Shin Harada ,  Kenichi Hirotsu ,  Satoshi Hatsukawa ,  Takashi Hoshino ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

IPC分类号： H01L29/808

CPC分类号： H01L29/0634 ,  H01L29/1058 ,  H01L29/1066 ,  H01L29/42316 ,  H01L29/66893 ,  H01L29/808

摘要： A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.

摘要翻译： 横向结型场效应晶体管包括布置在源/漏区域之间的第三半导体层中的第一栅电极层，具有在第二半导体层上延伸的下表面，并且掺杂有比第二半导体层更重的p型杂质 以及布置在源极/漏极区域之间的第五半导体层中的第二栅极电极层，具有在第四半导体层上延伸的下表面，具有与第一栅极电极层基本相同的p型杂质浓度，以及 具有与第一栅极电极层相同的电位。 因此，横向结型场效应晶体管具有可以在保持良好的击穿电压特性的同时降低导通电阻的结构。

公开(公告)号：US07266170B2

公开(公告)日：2007-09-04

申请号：US10114457

申请日：2002-04-03

申请人： Hiroyuki Matsunami ,  Kouji Okada

发明人： Hiroyuki Matsunami ,  Kouji Okada

IPC分类号： H03D3/24 ,  H03L7/06

CPC分类号： H03L7/0805 ,  H03L7/07 ,  H03L7/0891 ,  H03L7/091 ,  H03L7/0995 ,  H03L7/18

摘要： A control signal that runs a control oscillator of a signal generation circuit that generates a write clock is taken as a reference signal. That reference signal is supplied to a signal generation circuit that generates a read clock. In the signal generation circuit that generates the read clock, there is no need to generate a reference signal within its own circuits, which makes it possible to supply it to a control oscillator by adding the error timing from reading out the signal against the supplied reference signal. In this way, no means for locking the read clock into the initial frequency is needed and neither is the time for locking the read clock to the initial frequency (lock up time). This makes it possible to reduce the size of the circuit and to reduce the signal read-out time.

摘要翻译： 将产生写时钟的信号发生电路的控制振荡器的控制信号作为参考信号。 该参考信号被提供给产生读时钟的信号产生电路。 在产生读取时钟的信号发生电路中，不需要在其自身的电路内生成参考信号，这使得可以通过将错误定时从相对于所提供的参考值读出信号加到控制振荡器 信号。 以这种方式，不需要将读时钟锁定到初始频率的手段，也不需要将读时钟锁定到初始频率（锁定时间）的时间。 这使得可以减小电路的尺寸并减少信号读出时间。