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    Diboride single crystal substrate, semiconductor device using this and its manufacturing method
    1.
    发明授权
    Diboride single crystal substrate, semiconductor device using this and its manufacturing method 失效
    二硼化物单晶基板，使用这种半导体器件及其制造方法

    公开(公告)号：US07297989B2

    公开(公告)日：2007-11-20

    申请号：US10525753

    申请日：2003-08-21

    申请人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

    发明人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

    IPC分类号： H01L33/00

    CPC分类号： H01L31/0264 ,  C30B29/10 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/24 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/32341

    摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.

    摘要翻译： 公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。 允许衬底1容易地沿着（10-10）平面4进行切割和分割。 使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。 具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。 还实现了消除切割余量的制造方法。

    Diboride single crystal substrate, semiconductor device using this and its manufacturing method
    2.
    发明申请
    Diboride single crystal substrate, semiconductor device using this and its manufacturing method 失效
    二硼化物单晶基板，使用这种半导体器件及其制造方法

    公开(公告)号：US20060102924A1

    公开(公告)日：2006-05-18

    申请号：US10525753

    申请日：2003-08-21

    申请人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

    发明人： Shigeki Otani ,  Hiroyuki Kinoshita ,  Hiroyuki Matsunami ,  Jun Suda ,  Hiroshi Amano ,  Isamu Akasaki ,  Satoshi Kamiyama

    IPC分类号： H01L33/00

    CPC分类号： H01L31/0264 ,  C30B29/10 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/24 ,  H01S5/0213 ,  H01S5/0218 ,  H01S5/32341

    摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.

    摘要翻译： 公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。 允许衬底1容易地沿着（10-10）平面4进行切割和分割。 使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。 具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。 还实现了消除切割余量的制造方法。

    Group III-nitride semiconductor substrate and its manufacturing method
    3.
    发明申请
    Group III-nitride semiconductor substrate and its manufacturing method 审中-公开
    III族氮化物半导体衬底及其制造方法

    公开(公告)号：US20050066885A1

    公开(公告)日：2005-03-31

    申请号：US10500002

    申请日：2002-12-26

    申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Shigeki Ohtani ,  Jun Suda

    发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Shigeki Ohtani ,  Jun Suda

    IPC分类号： C30B29/38 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  H01L33/12 ,  H01L33/32 ,  H01S5/323 ,  B32B9/00 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

    CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

    摘要： Disclosed are a group III-nitride semiconductor substrate and a production method therefor. A group III-nitride semiconductor substrate having an element-forming surface with a dislocation density of 107 cm−2 or less in its entirely is formed only two steps. In a first step, a AlGaN-based low-temperature buffer layer is formed on a ZrB2 single crystal base having a defect density of 107 cm−2 or less, at a base temperature allowing the low-temperature buffer layer to be grown or deposited on the ZrB2 single crystal base substantially without creation of any Zr—B—N amorphous nitrided layer. Subsequently, in a second step, an AlGaN-based single crystal film is grown directly on the low-temperature buffer layer. The present invention can fully bring out the properties of the ZrB2 single crystal base having a high potential as a base material capable of lattice marching with group III-nitride semiconductors, so as to achieve a high-quality AlGaN semiconductor layer with an element-forming surface having a low dislocation density, through a fully simplified process.

    摘要翻译： 公开了III族氮化物半导体衬底及其制造方法。 具有位错密度为10 -7 cm -2以下的元素形成表面的III族氮化物半导体衬底完全仅形成两个步骤。 在第一步骤中，在基底温度下，在缺陷密度为10 -7 cm -2以下的ZrB2单晶基底上形成AlGaN系低温缓冲层，使得低温缓冲层 在ZrB2单晶基底上生长或沉积，基本上不产生任何Zr-BN无定形氮化层。 随后，在第二步骤中，直接在低温缓冲层上生长AlGaN基单晶膜。 本发明可以充分发挥具有高电位的ZrB2单晶基体作为能够与III族氮化物半导体进行晶格游离的基体材料的性能，从而获得具有元素形成的高质量的AlGaN半导体层 表面具有低位错密度，通过完全简化的过程。

    SiC crystal and semiconductor device
    4.
    发明申请
    SiC crystal and semiconductor device 有权
    SiC晶体和半导体器件

    公开(公告)号：US20080277670A1

    公开(公告)日：2008-11-13

    申请号：US12152016

    申请日：2008-05-12

    申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

    发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

    IPC分类号： H01L33/00

    CPC分类号： B23K35/262 ,  C22C13/00 ,  H01B1/026

    摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

    摘要翻译： 本发明公开了一种SiC晶体，其包括：浓度大于5×10 17 cm -3的受主杂质; 供体杂质浓度小于1×10 9 -3 -3，且大于受体杂质的浓度。 本发明公开了一种半导体器件，包括：具有浓度大于5×10 17 cm -3的受主杂质的SiC荧光层和位于 浓度小于1×10 9 cm -3以上且大于受主杂质的浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。

    SiC crystal and semiconductor device
    5.
    发明授权
    SiC crystal and semiconductor device 有权
    SiC晶体和半导体器件

    公开(公告)号：US07855385B2

    公开(公告)日：2010-12-21

    申请号：US12152016

    申请日：2008-05-12

    申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

    发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki ,  Motoaki Iwaya ,  Masahiro Yoshimoto ,  Hiroyuki Kinoshita

    IPC分类号： H01L31/0312

    CPC分类号： B23K35/262 ,  C22C13/00 ,  H01B1/026

    摘要： The present invention discloses a SiC crystal, comprising: acceptor impurities that are in a concentration greater than 5×1017 cm−3; donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities. The present invention discloses a semiconductor device, comprising: a SiC fluorescent layer having acceptor impurities that are in a concentration greater than 5×1017 cm−3 and donor impurities that are in a concentration less than 1×1019 cm−3 and greater than the concentration of the acceptor impurities; and a light emission layer that is layered on the SiC fluorescent layer and emits excitation light for the SiC fluorescent layer.

    摘要翻译： 本发明公开了一种SiC晶体，其包含：浓度大于5×1017cm-3的受主杂质; 供体杂质浓度小于1×1019 cm-3，大于受主杂质的浓度。 本发明公开了一种半导体器件，包括：具有浓度大于5×1017cm-3的受主杂质的SiC荧光层和浓度小于1×1019 cm -3并且大于 受体杂质浓度; 以及层叠在SiC荧光层上并发射用于SiC荧光层的激发光的发光层。