公开(公告)号：US20120164757A1

公开(公告)日：2012-06-28

申请号：US12979055

申请日：2010-12-27

申请人： Zheng Gao ,  Liubo Hong ,  Richard Hsiao ,  Kochan Ju ,  Stefan Maat

发明人： Zheng Gao ,  Liubo Hong ,  Richard Hsiao ,  Kochan Ju ,  Stefan Maat

IPC分类号： H01L21/02

CPC分类号： H01L43/08 ,  G01R33/098 ,  G11B5/1278 ,  G11B5/3163 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/12

摘要： The present invention provides a method for manufacturing a TMR sensor that reduces damage to a sensor stack during intermediate stages of the manufacturing process. In an embodiment of the invention, after formation of a sensor stack, a protective layer is deposited on the sensor stack that provides protection from materials that may be used in subsequent steps of the manufacturing process. The protective layer is subsequently converted to an insulating layer and the thickness of the insulating layer is extended to an appropriate thickness. In converting the protective layer to an insulating layer, the sensor stack is not directly exposed to materials that may damage it. For example, in an embodiment of the invention, Mg is used as the protective layer that is subsequently converted to MgO with the introduction of oxygen. Although direct contact of oxygen with the sensor stack may cause damage to the sensor stack, direct contact is avoided by the present invention. Subsequently, the thickness of the insulating layer, in this example can be extended to an appropriate thickness without exposing the sensor stack to damage causing oxygen and inter-diffusion.

摘要翻译： 本发明提供一种用于制造TMR传感器的方法，该方法在制造过程的中间阶段降低对传感器堆叠的损坏。 在本发明的一个实施例中，在形成传感器堆叠之后，保护层沉积在传感器堆叠上，该保护层提供了防止可能在制造过程的随后步骤中使用的材料。 随后将保护层转化为绝缘层，并将绝缘层的厚度延伸至适当的厚度。 在将保护层转换为绝缘层时，传感器堆叠不会直接暴露于可能会损坏传感器的材料。 例如，在本发明的一个实施方案中，使用Mg作为保护层，随后通过引入氧转化为MgO。 尽管氧与传感器堆的直接接触可能导致传感器堆的损坏，但通过本发明避免了直接接触。 随后，在该示例中，绝缘层的厚度可以扩展到适当的厚度，而不会使传感器堆不暴露以造成氧和相互扩散。

公开(公告)号：US20120127616A1

公开(公告)日：2012-05-24

申请号：US12954508

申请日：2010-11-24

申请人： HONGLIN ZHU ,  Liubo Hong ,  Hicham M. Sougrati ,  Quang Le ,  Jui-Lung Li ,  Chando Park

发明人： HONGLIN ZHU ,  Liubo Hong ,  Hicham M. Sougrati ,  Quang Le ,  Jui-Lung Li ,  Chando Park

IPC分类号： G11B5/33 ,  B44C1/22 ,  B05D5/12

CPC分类号： G11B5/3163 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3932

摘要： Embodiments herein generally relate to TMR readers and methods for their manufacture. The embodiments discussed herein disclose TMR readers that utilize a structure that avoids use of the DLC layer over the sensor structure and over the hard bias layer. The capping structure over the sensor structure functions as both a protective layer for the sensor structure and a CMP stop layer. The hard bias capping structure functions as both a protective structure for the hard bias layer and as a CMP stop layer. The capping structures that are free of DLC reduce the formation of notches in the second shield layer so that second shield layer is substantially flat.

摘要翻译： 本文的实施方案通常涉及TMR读取器及其制造方法。 本文讨论的实施例公开了使用避免在传感器结构上以及硬偏压层上使用DLC层的结构的TMR读取器。 传感器结构上的封盖结构用作传感器结构的保护层和CMP停止层。 硬偏置封盖结构既用作硬偏置层的保护结构又用作CMP停止层。 没有DLC的封盖结构减少了第二屏蔽层中的凹口的形成，使得第二屏蔽层基本上是平的。

公开(公告)号：US20120125886A1

公开(公告)日：2012-05-24

申请号：US12954485

申请日：2010-11-24

申请人： Liubo Hong ,  Fenglin Liu ,  Qiping Zhong ,  Honglin Zhu

发明人： Liubo Hong ,  Fenglin Liu ,  Qiping Zhong ,  Honglin Zhu

IPC分类号： G01R1/16

CPC分类号： G11B5/315 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/3163

摘要： Methods for fabrication of leading edge shields and tapered magnetic poles with a tapered leading edge are provided. The leading edge shield may be formed by utilizing a CMP stop layer. The CMP stop layer may aid in preventing over polishing of the magnetic material. For the tapered magnetic poles with a tapered leading edge, a magnetic material is deposited on a planarized surface, a patterned resist material is formed, and exposed magnetic material is etched to form at least one tapered surface of the magnetic material.

摘要翻译： 提供了具有锥形前缘的前缘屏蔽和锥形磁极的制造方法。 前缘屏蔽可以通过利用CMP停止层形成。 CMP停止层可以有助于防止磁性材料的过度抛光。 对于具有锥形前缘的锥形磁极，将磁性材料沉积在平坦化表面上，形成图案化的抗蚀剂材料，并且暴露的磁性材料被蚀刻以形成磁性材料的至少一个锥形表面。

公开(公告)号：US08166632B1

公开(公告)日：2012-05-01

申请号：US12057611

申请日：2008-03-28

申请人： Jinqiu Zhang ,  Liubo Hong ,  Yong Shen ,  Donghong Li

发明人： Jinqiu Zhang ,  Liubo Hong ,  Yong Shen ,  Donghong Li

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method and system for providing a PMR transducer including an intermediate layer. The method and system include providing a hard mask layer on the intermediate layer. The hard mask layer is for a reactive ion etch of the intermediate layer. The method and system also include providing a bottom antireflective coating (BARC) layer on the hard mask layer. The BARC layer is also a masking layer for the hard mask layer. The method and system also include forming a trench in the intermediate layer using at least one reactive ion etch (RIE). The trench has a bottom and a top wider than the bottom. The method and system also include providing a PMR pole. At least a portion of the PMR pole resides in the trench.

摘要翻译： 一种用于提供包括中间层的PMR换能器的方法和系统。 该方法和系统包括在中间层上提供硬掩模层。 硬掩模层用于中间层的反应离子蚀刻。 该方法和系统还包括在硬掩模层上提供底部抗反射涂层（BARC）层。 BARC层也是硬掩模层的掩模层。 该方法和系统还包括使用至少一个反应离子蚀刻（RIE）在中间层中形成沟槽。 沟槽的底部和顶部宽于底部。 该方法和系统还包括提供PMR极点。 PMR极的至少一部分位于沟槽中。

公开(公告)号：US07999360B2

公开(公告)日：2011-08-16

申请号：US12589466

申请日：2009-10-23

申请人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

发明人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

IPC分类号： H01L23/552

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

摘要： An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the α-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer of NiCr, NiFe, or NiFeCr layer on the oc-TaN layer. An α-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an α-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.

摘要翻译： 公开了一种MRAM结构，其中底部电极具有无定形TaN覆盖层，以一致地提供在覆盖的MTJ中的AFM，固定，隧道势垒和自由层的平滑且致密的生长。 与传统的Ta覆盖层不同，TaN是抗氧化的并且具有高电阻率以避免由于覆盖层在隧道势垒层的侧壁上的再沉积引起的感测电流的分流。 或者，α-TaN层是MTJ中的种子层。 此外，种子层可以是在oc-TaN层上的NiCr，NiFe或NiFeCr层的复合层。 也可以在TMR读取头中使用α-TaN覆盖层或种子层。 在α-TaN覆盖层上形成的MTJ具有高的MR比，高的Vb和RA，与基于优化的Ta覆盖层的MTJ获得的结果相似。

公开(公告)号：US20100047929A1

公开(公告)日：2010-02-25

申请号：US12589465

申请日：2009-10-23

申请人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

发明人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

IPC分类号： H01L21/8246

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

摘要： An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the α-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the α-TaN layer. An α-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an α-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.

摘要翻译： 公开了一种MRAM结构，其中底部电极具有无定形TaN覆盖层，以一致地提供在覆盖的MTJ中的AFM，固定，隧道势垒和自由层的平滑且致密的生长。 与传统的Ta覆盖层不同，TaN是抗氧化的并且具有高电阻率以避免由于覆盖层在隧道势垒层的侧壁上的再沉积引起的感测电流的分流。 或者，α-TaN层是MTJ中的种子层。 此外，种子层可以是由α-TaN层上的NiCr，NiFe或NiFeCr层构成的复合层。 也可以在TMR读取头中使用α-TaN覆盖层或种子层。 在α-TaN覆盖层上形成的MTJ具有高的MR比，高的Vb和RA，与基于优化的Ta覆盖层的MTJ获得的结果相似。

公开(公告)号：US07611912B2

公开(公告)日：2009-11-03

申请号：US10881445

申请日：2004-06-30

申请人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

发明人： Liubo Hong ,  Cheng Horng ,  Mao-Min Chen ,  Ru-Yin Tong

IPC分类号： H01L21/8246

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

摘要： An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the α-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the α-TaN layer. An α-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an α-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.

摘要翻译： 公开了一种MRAM结构，其中底部电极具有无定形TaN覆盖层，以一致地提供在覆盖的MTJ中的AFM，固定，隧道势垒和自由层的平滑且致密的生长。 与传统的Ta覆盖层不同，TaN是抗氧化的并且具有高电阻率以避免由于覆盖层在隧道势垒层的侧壁上的再沉积引起的感测电流的分流。 或者，α-TaN层是MTJ中的种子层。 此外，种子层可以是由α-TaN层上的NiCr，NiFe或NiFeCr层构成的复合层。 也可以在TMR读取头中使用α-TaN覆盖层或种子层。 在α-TaN覆盖层上形成的MTJ具有高MR比，高Vb和RA，其类似于基于优化的Ta覆盖层的MTJ获得的结果。

公开(公告)号：US20090244789A1

公开(公告)日：2009-10-01

申请号：US12060724

申请日：2008-04-01

申请人： Liubo Hong ,  Honglin Zhu

发明人： Liubo Hong ,  Honglin Zhu

IPC分类号： G11B5/33

CPC分类号： H01L43/12 ,  H01L43/08

摘要： The method and system for providing a magnetoresistive device are disclosed. The magnetoresistive device is formed from a plurality of magnetoresistive layer. The method and system include providing a mask. The mask covers a first portion of the magnetoresistive element layers in at least one device area. The magnetoresistive element(s) are defined using the mask. The method and system include depositing hard bias layer(s). The method and system also include providing a hard bias capping structure on the hard bias layer(s). The hard bias capping structure includes a first protective layer and a planarization stop layer. The first protective layer resides between the planarization stop layer and the hard bias layer(s). The method and system also include performing a planarization. The planarization stop layer is configured for the planarization.

摘要翻译： 公开了一种提供磁阻器件的方法和系统。 磁阻器件由多个磁阻层形成。 该方法和系统包括提供掩模。 掩模在至少一个器件区域中覆盖磁阻元件层的第一部分。 使用掩模限定磁阻元件。 该方法和系统包括沉积硬偏压层。 该方法和系统还包括在硬偏压层上提供硬偏压盖结构。 硬偏压盖结构包括第一保护层和平坦化停止层。 第一保护层位于平坦化停止层和硬偏压层之间。 该方法和系统还包括执行平面化。 平坦化停止层被配置为用于平坦化。

公开(公告)号：US20070120210A1

公开(公告)日：2007-05-31

申请号：US11290763

申请日：2005-11-30

申请人： Jun Yuan ,  Liubo Hong ,  Mao-Min Chen

发明人： Jun Yuan ,  Liubo Hong ,  Mao-Min Chen

IPC分类号： H01L29/82

CPC分类号： H01L43/12 ,  H01L27/222 ,  H01L43/08

摘要： Methods are presented for fabricating an MTJ element having a precisely controlled spacing between its free layer and a bit line and, in addition, having a protective spacer layer formed abutting the lateral sides of the MTJ element to eliminate leakage currents between MTJ layers and the bit line. Each method forms a dielectric spacer layer on the lateral sides of the MTJ element and, depending on the method, includes an additional layer that protects the spacer layer during etching processes used to form a Cu damascene bit line. At various stages in the process, a dielectric layer is also formed to act as a CMP stop layer so that the capping layer on the MTJ element is not thinned by the CMP process that planarizes the surrounding insulation. Subsequent to planarization, the stop layer is removed by an anisotropic etch of such precision that the MTJ element capping layer is not thinned and serves to maintain an exact spacing between the bit line and the MTJ free layer.

摘要翻译： 提出了用于制造在其自由层和位线之间具有精确控制的间隔的MTJ元件的方法，此外，具有邻接MTJ元件的侧面形成的保护性间隔层以消除MTJ层与钻头之间的泄漏电流 线。 每种方法在MTJ元件的侧面上形成电介质间隔层，并且根据该方法，包括在用于形成Cu镶嵌位线的蚀刻工艺期间保护间隔层的附加层。 在该过程的各个阶段，还形成介电层以用作CMP停止层，使得MTJ元件上的覆盖层不会通过使周围绝缘平坦化的CMP工艺变薄。 在平坦化之后，通过各向异性蚀刻去除停止层，其精度使得MTJ元件覆盖层不变薄并且用于保持位线和MTJ自由层之间的精确间隔。

公开(公告)号：US20070054450A1

公开(公告)日：2007-03-08

申请号：US11221146

申请日：2005-09-07

申请人： Liubo Hong ,  Mao-Min Chen ,  Tai Min ,  Jun Chen

发明人： Liubo Hong ,  Mao-Min Chen ,  Tai Min ,  Jun Chen

IPC分类号： H01L21/336

CPC分类号： H01L43/12

摘要： MTJ stacks formed using prior art processes often fail because of shorts between the pinned layer and the top electrode. This problem has been overcome by depositing a protective layer on the MTJ sidewalls followed by an inter-layer dielectric. Then planarizing until the protective layer is just exposed. Finally, an etching (or second CMP) process is used to selectively remove the protective layer from the top surface of the cap layer.

摘要翻译： 使用现有技术方法形成的MTJ堆叠通常由于被钉扎层和顶部电极之间的短路而失败。 通过在MTJ侧壁上沉积保护层，接着是层间电介质来克服这个问题。 然后平面化直到保护层刚刚暴露。 最后，使用蚀刻（或第二CMP）工艺来从盖层的顶表面选择性地去除保护层。