利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

105 条记录 (耗时 0.03 秒)

    Semiconductor device, and method for manufacturing the same
    31.
    发明授权
    Semiconductor device, and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08283721B2

    公开(公告)日：2012-10-09

    申请号：US12934012

    申请日：2009-03-26

    申请人： Yuki Nakano

    发明人： Yuki Nakano

    IPC分类号： H01L29/66 ,  H01L21/336

    CPC分类号： H01L29/7813 ,  H01L21/0465 ,  H01L29/0623 ,  H01L29/063 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7827

    摘要： A semiconductor device (A1) includes a semiconductor layer having a first face with a trench (3) formed thereon and a second face opposite to the first face, a gate electrode (41), and a gate insulating layer (5). The semiconductor layer includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13), and an n-type semiconductor region (14). The trench (3) is formed so as to penetrate through the p-type semiconductor layer (13) and to reach the second n-type semiconductor layer (12). The p-type semiconductor layer (13) includes an extended portion extending to a position closer to the second face of the semiconductor layer than the trench (3) is. Such structure allows suppressing dielectric breakdown in the gate insulating layer (5).

    摘要翻译： 半导体器件（A1）包括具有形成在其上的沟槽（3）的第一面和与第一面相反的第二面的半导体层，栅极（41）和栅极绝缘层（5）。 半导体层包括第一n型半导体层（11），第二n型半导体层（12），p型半导体层（13）和n型半导体区域（14）。 沟槽（3）形成为穿过p型半导体层（13）并到达第二n型半导体层（12）。 p型半导体层（13）包括延伸到比沟槽（3）更靠近半导体层的第二面的位置的延伸部分。 这种结构允许抑制栅绝缘层（5）中的电介质击穿。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    33.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20120049202A1

    公开(公告)日：2012-03-01

    申请号：US13259344

    申请日：2010-04-05

    申请人： Yuki Nakano

    发明人： Yuki Nakano

    IPC分类号： H01L29/161 ,  H01L21/336

    CPC分类号： H01L29/7813 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/45 ,  H01L29/66068

    摘要： The semiconductor device according to the present invention includes a semiconductor layer of a first conductivity type made of SiC, a body region of a second conductivity type formed on a surface layer portion of the semiconductor layer, a gate trench dug down from a surface of the semiconductor layer with a bottom surface formed on a portion of the semiconductor layer under the body region, source regions of the first conductivity type formed on a surface layer portion of the body region adjacently to side surfaces of the gate trench, a gate insulating film formed on the bottom surface and the side surfaces of the gate trench so that the thickness of a portion on the bottom surface is greater than the thickness of portions on the side surfaces, a gate electrode embedded in the gate trench through the gate insulating film, and an implantation layer formed on a portion of the semiconductor layer extending from the bottom surface of the gate trench to an intermediate portion of the semiconductor layer in the thickness direction by implantation of a second conductivity type impurity.

    摘要翻译： 根据本发明的半导体器件包括由SiC制成的第一导电类型的半导体层，形成在半导体层的表面层部分上的第二导电类型的体区，从 半导体层，其具有形成在所述体区域的所述半导体层的一部分上的底面，所述第一导电型的源极区域形成在所述主体区域的与所述栅极沟槽的侧面相邻的表面层部分上，形成栅极绝缘膜 在栅极沟槽的底表面和侧表面上，使得底表面上的部分的厚度大于侧表面上的部分的厚度，通过栅极绝缘膜嵌入栅极沟槽中的栅电极，以及 所述注入层形成在所述半导体层的从所述栅极沟槽的底表面延伸到所述半导体的中间部分的部分上 通过注入第二导电型杂质在厚度方向上的导体层。

    ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT-EMITTING TRANSISTOR
    35.
    发明申请
    ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT-EMITTING TRANSISTOR 审中-公开
    有机薄膜晶体管和有机薄膜发光晶体管

    公开(公告)号：US20100243993A1

    公开(公告)日：2010-09-30

    申请号：US12514958

    申请日：2007-11-13

    申请人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

    发明人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

    IPC分类号： H01L51/30

    CPC分类号： H01L51/0067 ,  H01L51/0058 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/057 ,  H01L51/5296

    摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.

    摘要翻译： 一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制 对所述栅电极施加电压，其中，所述有机半导体层在其中央包含具有芳香族杂环基的规定的有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光 提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

    ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT EMITTING TRANSISTOR
    36.
    发明申请
    ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT EMITTING TRANSISTOR 有权
    有机薄膜晶体管和有机薄膜发光晶体管

    公开(公告)号：US20100019234A1

    公开(公告)日：2010-01-28

    申请号：US12517462

    申请日：2007-11-28

    申请人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

    发明人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

    IPC分类号： H01L51/30

    CPC分类号： H01L51/0094 ,  H01L51/0022 ,  H01L51/005 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105 ,  H01L51/5012 ,  H01L51/52 ,  H01L51/5203 ,  H01L51/5296

    摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.

    摘要翻译： 一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制 对所述栅电极施加电压，其中，所述有机半导体层在其中央包含具有芳香族杂环基的规定的有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光 提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

    ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT-EMITTING TRANSISTOR
    37.
    发明申请
    ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT-EMITTING TRANSISTOR 有权
    有机薄膜晶体管和有机薄膜发光晶体管

    公开(公告)号：US20090256145A1

    公开(公告)日：2009-10-15

    申请号：US12514866

    申请日：2007-11-13

    申请人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

    发明人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

    IPC分类号： H01L51/10

    CPC分类号： H01L51/5296 ,  H01L51/0022 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0056 ,  H01L51/0058 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

    摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having a divalent aromatic hydrocarbon group having a phenanthrene structure in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.

    摘要翻译： 一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制 对所述栅电极施加电压，其中所述有机半导体层包含其中心具有菲结构的二价芳族烃基的规定的有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光 提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

    CONNECTOR
    38.
    发明申请
    CONNECTOR 有权
    连接器

    公开(公告)号：US20090017645A1

    公开(公告)日：2009-01-15

    申请号：US12168047

    申请日：2008-07-03

    申请人： Masayuki Suzuki ,  Yuki Nakano

    发明人： Masayuki Suzuki ,  Yuki Nakano

    IPC分类号： H01R12/28

    CPC分类号： H01R12/88 ,  H01R12/57 ,  H01R12/79 ,  H01R12/82

    摘要： A first contact and a second contact are inserted into one and the same inserting hole of a housing so that contact portions of the first and second contacts are facing to each other. The first contacts each include the contact portion at one end and a connection portion at the other end. The second contacts each includes a first piece having the contact portion at one end and a pressure receiving portion at the other end, a second piece having connection portion at an outer end, and an elastic jointing-portion for jointing the first piece and the remaining end of the second piece. A pivoting member includes an actuating portion, pushing portions, and anchoring holes. The pushing portions are pivotally moved between the pressure receiving portions and the connection portions of the second contacts, during which pivotal movement, the axis of rotation of the pushing portions is moved with their pivotal movement to achieve their compact rotation. The second contacts are each provided on the second piece with a fixing portion in the proximity of the elastic jointing-portion. The connector constructed as above described prevents the contacts from being warped or deformed when the pivoting member is being pivotally moved, and achieves a stable electrical connection, a reduced overall height of the connector and a high density of the conductors.

    摘要翻译： 将第一接触件和第二接触件插入到壳体的同一插入孔中，使得第一和第二接触件的接触部分彼此面对。 第一触点各自包括一端的接触部分和另一端的连接部分。 第二触点分别包括一端具有接触部分的第一部分和另一端处的受压部分，在外端具有连接部分的第二部件和用于将第一部件与其余部件接合的弹性接合部分 第二件的结尾。 枢转构件包括致动部分，推动部分和锚定孔。 推动部分在压力接收部分和第二接触件的连接部分之间枢转运动，在此期间枢转运动中，推动部分的旋转轴线以其枢转运动而移动以实现其紧凑的旋转。 第二触点分别设置在第二部件上，在弹性接合部分附近具有固定部分。 如上所述构造的连接器防止了当枢转构件被枢转地移动时触头翘曲或变形，并且实现了稳定的电连接，连接器的整体高度降低以及导体的高密度。