公开(公告)号：US08741803B2

公开(公告)日：2014-06-03

申请号：US12673268

申请日：2008-07-31

申请人： Yoshihiro Ito ,  Yuki Nakano

发明人： Yoshihiro Ito ,  Yuki Nakano

IPC分类号： A01N43/40 ,  A01N43/653 ,  A01P7/00 ,  A01P7/02 ,  A01P7/04

CPC分类号： A01N41/02 ,  A01N31/14 ,  A01N41/10 ,  A01N43/50 ,  A01N43/653 ,  A01N37/22 ,  A01N37/28 ,  A01N37/42 ,  A01N43/16 ,  A01N43/40 ,  A01N43/54 ,  A01N43/56 ,  A01N47/24 ,  A01N47/38 ,  A01N53/00 ,  A01N57/28 ,  A01N2300/00

摘要： To provide a pesticidal composition which controls a pest undesirable for cultivation of a useful crop plant or a useful plant. A pesticidal composition comprising the following (component A) and the following (component B) as active ingredients:(component A): one or more compounds selected from 3-arylphenyl sulfide derivatives represented by the formula [I]:(component A): wherein R is a C2-C6 alkyl group which may be substituted, or the like, each of B0, B1, B2 and B3 which are independent of one another, is a hydrogen atom, a halogen atom or a haloalkyl group, n is an integer of from 0 to 2, and Ar is a phenyl group, a pyrazolyl group or a triazolyl group, (component B): one or more compounds selected from the group consisting of triazamate, butocarboxim, butoxycarboxim, chromafenozide, halofenozide, cyflumetofen, prallethrin, acetoprole, ethiprole, methamidophos, flonicamid, pyridalyl, flufenerim, flubendiamide, tebufenozide, fenazaquin and cyenopyrafen.

摘要翻译： 提供控制不利于培育有用作物植物或有用植物的害虫的杀虫组合物。 作为活性成分的（A）成分和下述（B成分）的农药组合物：（A成分）：式（I）表示的一种以上选自3-芳基苯基硫醚衍生物的化合物：（A成分）： 其中R是可以被取代的C 2 -C 6烷基等，其彼此独立的B 0，B 1，B 2和B 3各自是氢原子，卤素原子或卤代烷基，n是 0至2的整数，Ar为苯基，吡唑基或三唑基（组分B）：一种或多种选自三唑烷基，咔唑基偶氮，丁氧基卡马西亚，二铬酰肼，卤苯酰肼，氰氟虫酯，丙烯菊酯 ，acetoprole，乙虫腈，甲胺磷，氟虫酰胺，吡啶甲酰，flufenerim，flubendiamide，tebufenozide，fenazaquin和cyenopyrafen。

公开(公告)号：US08653533B2

公开(公告)日：2014-02-18

申请号：US13394549

申请日：2010-09-02

申请人： Shuhei Mitani ,  Yuki Nakano ,  Heiji Watanabe ,  Takayoshi Shimura ,  Takuji Hosoi ,  Takashi Kirino

发明人： Shuhei Mitani ,  Yuki Nakano ,  Heiji Watanabe ,  Takayoshi Shimura ,  Takuji Hosoi ,  Takashi Kirino

IPC分类号： H01L29/15

CPC分类号： H01L29/7827 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0223 ,  H01L21/02236 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/0445 ,  H01L21/049 ,  H01L21/8213 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/1087 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/45 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7802 ,  H01L29/7813

摘要： A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在碳化硅衬底上形成氧化硅膜，在含有氢气的气体中退火碳化硅衬底和氧化硅膜，并在氧化硅膜上形成氧氮化硅膜 碳化硅衬底和氧化硅膜的退火。

公开(公告)号：US20130313635A1

公开(公告)日：2013-11-28

申请号：US13983157

申请日：2012-02-01

申请人： Yuki Nakano

发明人： Yuki Nakano

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L21/8213 ,  H01L27/088 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/1095 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66045 ,  H01L29/66068 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7827 ,  H01L2224/0603

摘要： A semiconductor device of the present invention is a semiconductor device having a semiconductor layer comprising a wide band gap semiconductor, wherein the semiconductor layer includes: a first conductivity-type source region, a second conductivity-type channel region and a first conductivity-type drain region, which are formed in this order from the surface side of the semiconductor layer; a source trench lying from the surface of the semiconductor layer through the source region and the channel region to the drain region; a gate insulating film formed so as to contact the channel region; a gate electrode facing the channel region with the gate insulating film interposed therebetween; and a first breakdown voltage holding region of a second conductivity type formed selectively on the side face or the bottom face of the source trench, and the semiconductor device includes a barrier formation layer, which is joined with the drain region in the source trench, for forming, by junction with the drain region, a junction barrier lower than a diffusion potential of a body diode formed by p-n junction between the channel region and the drain region.

摘要翻译： 本发明的半导体器件是具有包括宽带隙半导体的半导体层的半导体器件，其中半导体层包括：第一导电型源极区，第二导电型沟道区和第一导电类型漏极 区域，其从半导体层的表面侧依次形成; 源极沟槽，其从半导体层的表面通过源极区域和沟道区域到达漏极区域; 形成为与沟道区域接触的栅极绝缘膜; 面对沟道区域的栅电极，其间插入有栅极绝缘膜; 以及选择性地形成在源沟槽的侧面或底面上的第二导电类型的第一击穿电压保持区域，并且所述半导体器件包括与源极沟槽中的漏极区域接合的势垒形成层，用于 通过与漏极区域的连接形成低于由沟道区域和漏极区域之间的pn结形成的体二极管的扩散电位的结屏障。

公开(公告)号：US20130306983A1

公开(公告)日：2013-11-21

申请号：US13983051

申请日：2012-02-01

申请人： Yuki Nakano ,  Ryota Nakamura

发明人： Yuki Nakano ,  Ryota Nakamura

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L27/088

CPC分类号： H01L29/063 ,  H01L21/046 ,  H01L27/088 ,  H01L29/045 ,  H01L29/0607 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1037 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66666 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827

摘要： A semiconductor device according to the present invention includes a semiconductor layer made of a wide bandgap semiconductor having a gate trench provided with a sidewall and a bottom wall, a gate insulating film formed on the sidewall and the bottom wall of the gate trench, and a gate electrode embedded in the gate trench to be opposed to the semiconductor layer through the gate insulating film, while the semiconductor layer includes a first conductivity type source region formed to be exposed on the side of a front surface of the semiconductor layer for partially forming the sidewall of the gate trench, a second conductivity type body region formed on a side of the source region closer to a rear surface of the semiconductor layer to be in contact with the source region for partially forming the sidewall of the gate trench, a first conductivity type drift region formed on a side of the body region closer to the rear surface of the semiconductor layer to be in contact with the body region for forming the bottom wall of the gate trench, and a second conductivity type first breakdown voltage holding region selectively formed on an edge portion of the gate trench where the sidewall and the bottom wall intersect with each other in a partial region of the gate trench.

摘要翻译： 根据本发明的半导体器件包括由具有设置有侧壁和底壁的栅极沟槽的宽带隙半导体制成的半导体层，形成在栅极沟槽的侧壁和底壁上的栅极绝缘膜，以及 栅极电极嵌入栅极沟槽中，以通过栅极绝缘膜与半导体层相对，而半导体层包括形成为暴露在半导体层的前表面侧的第一导电型源极区域，以部分地形成 所述栅极沟槽的侧壁，形成在所述源极区域的靠近所述半导体层的后表面的与所述源极区域接触以用于部分地形成所述栅极沟槽的侧壁的第二导电类型体区域，第一导电性 类型漂移区域形成在身体区域更靠近半导体层的后表面的一侧以与身体re接触 用于形成栅极沟槽的底壁的第一导电类型的第一导电类型的第一击穿电压保持区域，以及选择性地形成在栅极沟槽的边缘部分上的第二导电类型的第一击穿电压保持区域，其中所述侧壁和底壁在栅极沟槽的部分区域中彼此相交 。

公开(公告)号：US08575622B2

公开(公告)日：2013-11-05

申请号：US12993209

申请日：2009-05-20

申请人： Yuki Nakano

发明人： Yuki Nakano

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7397

摘要： A semiconductor device (A1) includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13), a trench (3), an insulating layer (5), a gate electrode (41), and an n-type semiconductor region (14). The p-type semiconductor layer (13) includes a channel region that is along the trench (3) and in contact with the second n-type semiconductor layer (12) and the n-type semiconductor region (14). The size of the channel region in the depth direction x is 0.1 to 0.5 μm. The channel region includes a high-concentration region where the peak impurity concentration is approximately 1×1018 cm−3. The semiconductor device A1 thus configured allows achieving desirable values of on-resistance, dielectric withstand voltage and threshold voltage.

摘要翻译： 半导体器件（A1）包括第一n型半导体层（11），第二n型半导体层（12），p型半导体层（13），沟槽（3），绝缘层（5） ），栅电极（41）和n型半导体区域（14）。 p型半导体层（13）包括沿着沟槽（3）并与第二n型半导体层（12）和n型半导体区域（14）接触的沟道区域。 沟道区域的深度方向x的大小为0.1〜0.5μm。 沟道区域包括峰值杂质浓度约为1×1018cm-3的高浓度区域。 如此构造的半导体器件A1允许实现导通电阻，介电耐受电压和阈值电压的期望值。

公开(公告)号：US08395162B2

公开(公告)日：2013-03-12

申请号：US12839983

申请日：2010-07-20

申请人： Yuki Nakano ,  Ryota Nakamura ,  Katsuhisa Nagao

发明人： Yuki Nakano ,  Ryota Nakamura ,  Katsuhisa Nagao

IPC分类号： H01L29/15

CPC分类号： H01L29/4236 ,  H01L21/046 ,  H01L21/049 ,  H01L29/045 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/4916 ,  H01L29/4925 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/78684

摘要： The semiconductor device of the present invention includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.

摘要翻译： 本发明的半导体器件包括由添加导电杂质的材料制成的半导体区域，形成在半导体区域的表面上的绝缘膜和形成在绝缘膜上的导电栅电极。 栅极电极由与绝缘膜相邻的至少一部分中的费米能级比第一半导体区域的费米能级低于费米能级的材料制成。

公开(公告)号：US08389523B2

公开(公告)日：2013-03-05

申请号：US12671411

申请日：2008-07-31

申请人： Ryuji Tamai ,  Minoru Ito ,  Masami Kobayashi ,  Takashi Mitsunari ,  Yuki Nakano

发明人： Ryuji Tamai ,  Minoru Ito ,  Masami Kobayashi ,  Takashi Mitsunari ,  Yuki Nakano

IPC分类号： A61K31/495

CPC分类号： C07D471/04 ,  A01N43/60 ,  A01N43/653 ,  A01N43/66 ,  A01N43/68 ,  A01N43/80 ,  A01N43/82 ,  A01N43/84 ,  A01N43/90 ,  C07D241/44

摘要： The present invention is to provide an oxopyrazine derivative having an excellent herbicidal activity and besides exhibiting high safety for useful crops and the like, or a salt thereof, and a herbicide containing the same.The present invention relates to an oxopyrazine derivative represented by formula [I]: wherein X1 represents an oxygen atom or a sulfur atom; X2 represents CH or N(O)m; m represents an integer of 0 or 1; R1 represents a hydrogen atom, a C1-C12 alkyl group and the like; R2 represents a halogen atom, a cyano group and the like; R3 is a hydroxyl group, a halogen atom and the like; A1 represents C(R4R5); A2 represents C(R6R7) or C═O; A3 represents C(R8R9); R4 to R9 represent a hydrogen atom or an alkyl group, or a salt thereof, and a herbicide containing these compounds.

摘要翻译： 本发明提供具有优异的除草活性的氧草吡嗪衍生物，除了表现出对有用作物等的高安全性，或其盐，以及含有它们的除草剂。 本发明涉及式[I]表示的氧杂吡嗪衍生物：其中X1表示氧原子或硫原子; X2表示CH或N（O）m; m表示0或1的整数; R1表示氢原子，C1-C12烷基等; R2表示卤素原子，氰基等; R3是羟基，卤素原子等; A1表示C（R4R5）; A2表示C（R6R7）或C = O; A3表示C（R8R9）; R4至R9表示氢原子或烷基或其盐，以及含有这些化合物的除草剂。

公开(公告)号：US20130009256A1

公开(公告)日：2013-01-10

申请号：US13635312

申请日：2011-03-30

申请人： Keiji Okumura ,  Mineo Miura ,  Yuki Nakano ,  Noriaki Kawamoto

发明人： Keiji Okumura ,  Mineo Miura ,  Yuki Nakano ,  Noriaki Kawamoto

IPC分类号： H01L29/78

CPC分类号： H01L29/66734 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0465 ,  H01L21/31111 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/45 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66068 ,  H01L29/7811 ,  H01L29/7813

摘要： The semiconductor device according to the present invention includes a semiconductor layer of a first conductivity type, body regions of a second conductivity type plurally formed on a surface layer portion of the semiconductor layer at an interval, a source region of the first conductivity type formed on a surface layer portion of each body region, a gate insulating film provided on the semiconductor layer to extend between the body regions adjacent to each other, a gate electrode provided on the gate insulating film and opposed to the body regions, and a field relaxation portion provided between the body regions adjacent to each other for relaxing an electric field generated in the gate insulating film.

摘要翻译： 根据本发明的半导体器件包括第一导电类型的半导体层，第二导电类型的主体区域，多个以一定间隔形成在半导体层的表面层部分上，第一导电类型的源极区形成在 每个体区的表层部分，设置在半导体层上以在彼此相邻的主体区域之间延伸的栅极绝缘膜，设置在栅极绝缘膜上并与身体区域相对的栅电极，以及场弛豫部分 设置在彼此相邻的主体区域之间，用于放松在栅极绝缘膜中产生的电场。

公开(公告)号：US08148720B2

公开(公告)日：2012-04-03

申请号：US12516071

申请日：2007-11-15

申请人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

发明人： Masatoshi Saito ,  Yuki Nakano ,  Hiroaki Nakamura

IPC分类号： H01L29/08

CPC分类号： H01L51/0074 ,  C09K9/02 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1029 ,  C09K2211/1037 ,  C09K2211/1044 ,  H01L51/0022 ,  H01L51/005 ,  H01L51/0058 ,  H01L51/0068 ,  H01L51/0072 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105 ,  H01L51/5203 ,  H01L51/5296 ,  H05B33/14

摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an acetylene or olefin structure in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.

摘要翻译： 一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制 对所述栅电极施加电压，其中所述有机半导体层在其中心包含具有乙炔或烯烃结构的特定有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光 提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

公开(公告)号：US20120012861A1

公开(公告)日：2012-01-19

申请号：US13258452

申请日：2010-03-23

申请人： Yuki Nakano ,  Shuhei Mitani ,  Mineo Miura

发明人： Yuki Nakano ,  Shuhei Mitani ,  Mineo Miura

IPC分类号： H01L29/24

CPC分类号： H01L29/7816 ,  H01L29/045 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7811 ,  H01L29/7813

摘要： A semiconductor device including a semiconductor layer of a first conductivity type; a plurality of body regions of a second conductivity type, each formed in a region extending from the surface of the semiconductor layer to a halfway portion of the same in the thickness direction, and each spaced apart from each other in a direction perpendicular to the thickness direction; source regions of the first conductivity type, each formed on the surface layer part of each body region and spaced away from the edges of each body region; a gate insulating film formed on the semiconductor layer; and gate electrodes formed on the gate insulating film. In the semiconductor layer, trenches extending between two neighboring source regions are formed by digging from the source of the semiconductor layer, the inside surface of the trenches are covered by the gate insulating film, and the gate electrodes comprise surface-facing parts, which face the surface of the semiconductor layer, and buried parts, which are buried in the trenches.

摘要翻译： 一种半导体器件，包括第一导电类型的半导体层; 多个第二导电类型的主体区域，各自形成在从半导体层的表面延伸到其厚度方向的中间部分的区域中，并且在垂直于厚度的方向上彼此间隔开 方向; 源区域，每个源区域形成在每个体区域的表面层部分上并与每个身体区域的边缘隔开; 形成在所述半导体层上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。 在半导体层中，通过从半导体层的源进行挖掘来形成在两个相邻的源极区之间延伸的沟槽，沟槽的内表面被栅极绝缘膜覆盖，并且栅电极包括面向表面的部分 半导体层的表面和埋在沟槽中的埋藏部分。