公开(公告)号：US20100220518A1

公开(公告)日：2010-09-02

申请号：US12782101

申请日：2010-05-18

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Haiwen Xi

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Haiwen Xi

IPC分类号： G11C11/00 ,  G11C7/00

CPC分类号： G11C11/15 ,  G11C11/1675 ,  G11C11/5607

摘要： Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.

摘要翻译： 描述写入多位MRAM存储器单元的方法。 该方法包括对多位（即多级）热辅助MRAM进行自检测写入。 自检的写入会增加数据状态级之间的读取余量，并降低由于单元格电阻变化而导致的读取边缘变化。

公开(公告)号：US20100109108A1

公开(公告)日：2010-05-06

申请号：US12396868

申请日：2009-03-03

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Kaizhong Gao ,  Olle Heinonen ,  Wenzhong Zhu

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Kaizhong Gao ,  Olle Heinonen ,  Wenzhong Zhu

IPC分类号： H01L29/82

CPC分类号： G11C11/1675 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

摘要： Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.

摘要翻译： 自旋转矩存储器包括复合自由磁性元件，具有沿参考方向固定的磁化取向的参考磁性元件以及将复合自由磁性元件与磁性参考元件分离的电绝缘和非磁性隧道势垒层 。 自由磁性元件包括与软磁性层交换的硬磁性层。 复合自由磁性元件具有当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向。

公开(公告)号：US20100091563A1

公开(公告)日：2010-04-15

申请号：US12423119

申请日：2009-04-14

申请人： Yuankai Zheng ,  Haiwen Xi ,  Dimitar V. Dimitrov ,  Dexin Wang

发明人： Yuankai Zheng ,  Haiwen Xi ,  Dimitar V. Dimitrov ,  Dexin Wang

IPC分类号： G11C11/14 ,  H01L29/82

CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.

摘要翻译： 磁存储器单元包括分隔自由磁性元件和参考磁性元件的隧道势垒。 第一声​​子玻璃电子晶体层设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧。 第二声子玻璃电子晶体层也设置在与自由磁性元件或参考磁性元件的隧道势垒相对的一侧上，以在自由磁性元件和参考磁性元件上提供珀尔帖效应。

公开(公告)号：US20100067281A1

公开(公告)日：2010-03-18

申请号：US12210526

申请日：2008-09-15

申请人： Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

发明人： Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

IPC分类号： G11C11/00 ,  G11C7/00

CPC分类号： G11C11/16 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0057

摘要： Variable write and read methods for resistance random access memory (RRAM) are disclosed. The methods include initializing a write sequence and verifying the resistance state of the RRAM cell. If a write pulse is needed, then two or more write pulses are applied through the RRAM cell to write the desired data state to the RRAM cell. Each subsequent write pulse has substantially the same or greater write pulse duration. Subsequent write pulses are applied to the RRAM cell until the RRAM cell is in the desired data state or until a predetermined number of write pulses have been applied to the RRAM cell. A read method is also disclosed where subsequent read pulses are applied through the RRAM cell until the read is successful or until a predetermined number of read pulses have been applied to the RRAM cell.

公开(公告)号：US08320169B2

公开(公告)日：2012-11-27

申请号：US13333598

申请日：2011-12-21

申请人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

发明人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

摘要翻译： 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格

公开(公告)号：US07933146B2

公开(公告)日：2011-04-26

申请号：US12415243

申请日：2009-03-31

申请人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Yiran Chen ,  Haiwen Xi ,  Xiaohua Lou

发明人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Yiran Chen ,  Haiwen Xi ,  Xiaohua Lou

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  Y10S977/935

摘要： Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer; and a first stabilizing layer, wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure, wherein the electronic device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the electronic device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization in order to obtain one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current.

摘要翻译： 电子设备，其包括（i）磁化控制结构; （ii）隧道屏障结构; 和（iii）可磁化控制结构，包括：第一偏振层; 以及第一稳定层，其中所述隧道势垒结构在所述磁化控制结构和所述磁化控制结构之间，并且所述第一偏振层位于所述第一稳定层和所述隧道势垒结构之间，其中所述电子器件具有两个稳定的整体磁性构造， 并且其中施加到所述电子器件的第一单极电流将导致所述磁化控制结构的取向反转其取向，并且施加到所述电子器件的第二单极电流将导致所述磁化可控结构切换其磁化，以获得 两个稳定的整体磁性配置，其中第二单极性电流具有小于第一单极电流的幅度。

公开(公告)号：US07933137B2

公开(公告)日：2011-04-26

申请号：US12415257

申请日：2009-03-31

申请人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Yiran Chen ,  Haiwen Xi ,  Xiaohua Lou

发明人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Yiran Chen ,  Haiwen Xi ,  Xiaohua Lou

IPC分类号： G11C17/06

CPC分类号： H01L27/224 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1659 ,  H01L43/08

摘要： Non-volatile magnetic random access memory (MRAM) devices that include magnetic flip-flop structures that include a magnetization controlling structure; a first tunnel barrier structure; and a magnetization controllable structure that includes a first polarizing layer; and a first stabilizing layer, wherein the first tunnel barrier structure is between the magnetization controllable structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the first tunnel barrier structure, wherein the magnetic flip-flop device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization so that the device reaches one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current; a second tunnel barrier structure and a reference layer, wherein the second tunnel barrier structure is between the magnetic flip-flop device and the reference layer. MRAM cells that include such devices and arrays including such cells are also disclosed.

摘要翻译： 包括包含磁化控制结构的磁触发器结构的非易失磁性随机存取存储器（MRAM）器件; 第一隧道屏障结构; 以及包括第一偏振层的可磁化控制结构; 以及第一稳定层，其中所述第一隧道势垒结构在所述可磁化控制结构和所述磁化控制结构之间，并且所述第一偏振层位于所述第一稳定层和所述第一隧道势垒结构之间，其中所述磁性触发器装置具有两个 稳定的整体磁性结构，并且其中施加到器件的第一单极电流将引起磁化控制结构的取向反转其取向，并且施加到电子器件的第二单极电流将导致磁化可控结构切换其磁化，使得 该器件达到两种稳定的总体磁性结构中的一种，其中第二单极性电流的振幅小于第一单极性电流; 第二隧道势垒结构和参考层，其中所述第二隧道势垒结构位于所述磁触发器件和所述参考层之间。 还公开了包括这样的装置和包括这种细胞的阵列的MRAM细胞。

公开(公告)号：US20100085795A1

公开(公告)日：2010-04-08

申请号：US12408996

申请日：2009-03-23

申请人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

发明人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/416

CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

摘要翻译： 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格

公开(公告)号：US08482967B2

公开(公告)日：2013-07-09

申请号：US12938424

申请日：2010-11-03

申请人： Haiwen Xi ,  Yuankai Zheng ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Pat J. Ryan

发明人： Haiwen Xi ,  Yuankai Zheng ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Pat J. Ryan

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

摘要： An apparatus and method for enhancing data writing and retention to a magnetic memory element, such as in a non-volatile data storage array. In accordance with various embodiments, a programmable memory element has a reference layer and a storage layer. The reference layer is provided with a fixed magnetic orientation. The storage layer is programmed to have a first region with a magnetic orientation antiparallel to said fixed magnetic orientation, and a second region with a magnetic orientation parallel to said fixed magnetic orientation. A thermal assist layer may be incorporated into the memory element to enhance localized heating of the storage layer to aid in the transition of the first region from parallel to antiparallel magnetic orientation during a write operation.

摘要翻译： 一种用于增强对诸如非易失性数据存储阵列中的磁存储元件的数据写入和保持的装置和方法。 根据各种实施例，可编程存储元件具有参考层和存储层。 参考层具有固定的磁性取向。 存储层被编程为具有与所述固定磁性取向反平行的磁性取向的第一区域和具有与所述固定磁性取向平行的磁性取向的第二区域。 可以将热辅助层结合到存储元件中以增强存储层的局部加热，以帮助在写入操作期间第一区域从平行转变为反平行磁取向。

公开(公告)号：US08289759B2

公开(公告)日：2012-10-16

申请号：US13091372

申请日：2011-04-21

申请人： Xiaobin Wang ,  Yong Lu ,  Haiwen Xi ,  Yuankai Zheng ,  Yiran Chen ,  Harry Hongyue Liu ,  Dimitar V. Dimitrov ,  Wei Tian ,  Brian S. Lee

发明人： Xiaobin Wang ,  Yong Lu ,  Haiwen Xi ,  Yuankai Zheng ,  Yiran Chen ,  Harry Hongyue Liu ,  Dimitar V. Dimitrov ,  Wei Tian ,  Brian S. Lee

IPC分类号： G11C11/00

CPC分类号： H01F10/329 ,  B82Y25/00 ,  G06F7/588 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/1677 ,  G11C11/1693 ,  H01F10/3254 ,  H01F10/3286

摘要： A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.

摘要翻译： 一种将数据写入非易失性存储单元的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）存储单元。 在一些实施例中，通过将一系列不确定的写入脉冲施加到磁性隧道结构中来将所选择的电阻状态写入到所选择的电阻状态。