公开(公告)号：US07427640B1

公开(公告)日：2008-09-23

申请号：US09604763

申请日：2000-06-26

申请人： Tsuyoshi Katayama ,  Masakazu Okumura ,  Nobuaki Hattori ,  Makoto Nakajima ,  Osamu Kimura

发明人： Tsuyoshi Katayama ,  Masakazu Okumura ,  Nobuaki Hattori ,  Makoto Nakajima ,  Osamu Kimura

IPC分类号： A61K47/14 ,  A61K8/00 ,  A61K8/02

CPC分类号： C07C69/003 ,  A61K8/375 ,  A61K8/85 ,  A61Q1/02 ,  A61Q1/06 ,  A61Q1/10 ,  A61Q5/02 ,  A61Q5/12 ,  A61Q17/04 ,  A61Q19/00

摘要： An oil material comprising a dimerdiol ester with a monocarboxylic acid having 4 to 34 carbon atoms or with a dimerdiol ester with a dicarboxylic acid; and a cosmetic and an external agent excellent in safety, stability, gloss, feeling and the like comprising the dimerdiol carboxylate.

摘要翻译： 一种油料，其包含具有4至34个碳原子的一元羧酸的二聚二醇酯或与二羧酸的二聚二醇酯; 以及包含二聚体二羧酸酯的安全性，稳定性，光泽，感觉等优异的化妆品和外用剂。

公开(公告)号：US07115026B2

公开(公告)日：2006-10-03

申请号：US11201307

申请日：2005-08-11

申请人： Makoto Nakajima ,  Yoshio Nakamura ,  Tadakazu Miyashita

发明人： Makoto Nakajima ,  Yoshio Nakamura ,  Tadakazu Miyashita

IPC分类号： B24B7/22

CPC分类号： B24B37/08 ,  B24B41/007

摘要： An upper polishing plate is moved downward until facing a lower polishing plate to polish a work piece. The upper polishing plate is rotated in a horizontal plane together with a first elastic member, a second elastic member, an outer member and a connecting member. A pressure difference between a first pressing force pressing the outer member or an inner member upward and a second pressing force pressing the outer member or the inner member downward, which is produced in a first closed space by supplying a compressed fluid into and discharging the same from the first closed space, is adjusted, so that a third pressing force of the upper polishing plate, which presses a work piece, can be adjusted.

摘要翻译： 上抛光板向下移动直到面向下抛光板以抛光工件。 上部抛光板与第一弹性构件，第二弹性构件，外部构件和连接构件一起在水平面中旋转。 通过将压缩流体供给到其中并在其中排出而在第一封闭空间中产生的压缩外部构件或内部构件向上的第一按压力与第二按压力之间的压力差 从第一封闭空间被调节，从而能够调节按压工件的上部抛光板的第三按压力。

公开(公告)号：US20050028843A1

公开(公告)日：2005-02-10

申请号：US10937685

申请日：2004-09-09

申请人： Yasuhide Denda ,  Yoshio Nakamura ,  Yoshinobu Nishimoto ,  Makoto Nakajima ,  Tsuyoshi Hasegawa ,  Norihiko Moriya

发明人： Yasuhide Denda ,  Yoshio Nakamura ,  Yoshinobu Nishimoto ,  Makoto Nakajima ,  Tsuyoshi Hasegawa ,  Norihiko Moriya

IPC分类号： B08B3/02 ,  B08B15/04 ,  B24B37/08 ,  B24B53/007 ,  B24B53/017 ,  B24B49/00

CPC分类号： B24B37/08 ,  B08B3/024 ,  B08B15/04 ,  B08B2203/0229 ,  B24B53/017 ,  Y10S134/902

摘要： The method of the present invention cleans abrasive faces of an upper abrasive plate and a lower abrasive plate of an abrasive machine. The method is executed by a cleaning device including: a nozzle for jetting water; a brush for preventing the jetted water from scattering in the air, the brush enclosing the nozzle; and another brush for closing a gap between the preventing brush and an outer edge of the upper abrasive plate, the method is characterized by the steps of: jetting water from the nozzle toward the abrasive face of the upper abrasive plate; moving the nozzle toward the outer edge of the upper abrasive plate; and closing the gap by the closing brush when the gap is formed between the preventing brush and the outer edge of the upper abrasive plate.

公开(公告)号：US5549502A

公开(公告)日：1996-08-27

申请号：US162679

申请日：1993-12-06

申请人： Kohichi Tanaka ,  Hiromasa Hashimoto ,  Yasuo Inada ,  Makoto Nakajima

发明人： Kohichi Tanaka ,  Hiromasa Hashimoto ,  Yasuo Inada ,  Makoto Nakajima

IPC分类号： B24B37/34 ,  B24B1/00

CPC分类号： B24B37/345

摘要： A grinding method and apparatus having a position aligning mechanism to correctly achieve the centering of each work on a work table and locate an orientation flat part of each work at a predetermined position, and a displacing mechanism for reciprocally slidably displacing a top ring and the work table in order to assure that the center of each work is positionally aligned with the center of each top ring at an original position after completion of the centering of each work on the work table and the locating of the orientation flat part, and subsequently, centering each top ring with the gravitational center of each work so as to cancel a positional offset state prior to holding the work with the top ring to thrust the work against the grinding or polishing surface. The invention also includes a polishing method and apparatus in which both of a top ring and a rotary disc are reciprocally slidably displaced to improve the polishing efficiency of the device.

摘要翻译： 一种磨削方法和装置，其具有位置对准机构，以正确地实现每个工件在工作台上的对中并将每个工件的定向平面部分定位在预定位置，以及位移机构，用于可往复地滑动地移动顶环和工件 以确保每个工件的中心在完成每个工件在工作台上的定心和定位平面部分的定位之后在原始位置与每个顶环的中心位置对准，然后定心 每个顶环具有每个工件的重力中心，以便在用顶环保持工件之前取消位置偏移状态，以将工件推向研磨或抛光表面。 本发明还包括抛光方法和装置，其中顶环和旋转盘都可往复滑动地移位，以提高装置的抛光效率。

公开(公告)号：US5441444A

公开(公告)日：1995-08-15

申请号：US130473

申请日：1993-10-01

申请人： Makoto Nakajima

发明人： Makoto Nakajima

IPC分类号： B24B37/005 ,  B24B37/04 ,  B24B37/30 ,  H01L21/304 ,  B24B7/22

CPC分类号： B24B37/30

摘要： An object of the present invention is to provide a polishing machine having a smaller holding section. In the polishing machine of the present invention, a polishing plate polishes a wafer. A holding section has a concave section. A carrying plate, which is provided in the concave section, holds the wafer. A press mechanism for pressing the carrying plate toward the polishing plate comprises an elastic plate dividing an inner space of the concave section into an upper space, which is formed as an air tight chamber, and a lower space, and allowing the carrying plate to move in the vertical and the horizontal directions by elastic transformation, and a fluid supplying unit for supplying fluid into the upper space for pressurizing. In the polishing machine, the elastic plate is formed into a plate, so that its size in the vertical direction can be small, and the vertical size of the polishing machine also can be smaller.

摘要翻译： 本发明的目的是提供一种具有较小保持部分的抛光机。 在本发明的研磨机中，抛光板对晶片进行抛光。 保持部具有凹部。 设置在凹部中的承载板保持晶片。 用于将承载板朝向抛光板按压的按压机构包括将凹部的内部空间分割成形成为气密室的上部空间和下部空间的弹性板，并且允许承载板移动 通过弹性变形在垂直和水平方向上，以及用于将流体供应到上部空间用于加压的流体供应单元。 在抛光机中，弹性板形成为板，使得其在垂直方向上的尺寸可以较小，并且抛光机的垂直尺寸也可以更小。

公开(公告)号：US20120181788A1

公开(公告)日：2012-07-19

申请号：US13297903

申请日：2011-11-16

申请人： Shinjiro Inomata ,  Makoto Nakajima

发明人： Shinjiro Inomata ,  Makoto Nakajima

IPC分类号： F16L13/02

CPC分类号： B23K33/004 ,  F16L23/026 ,  F16L23/14 ,  G21C7/10 ,  G21C13/032 ,  Y02E30/39

摘要： In a joint structure, a tube member having a polygonal cross-section can be joined to a flange surface by full penetration welding with good strength margin, without imparting unreasonable force to the weld portion. The joint structure comprises a polygonal cylindrical lower guide tube joined by butt welding to a surface of a middle flange having a through-hole of the same shape as the lower guide tube, wherein at the end of the lower guide tube, within the linear portions that constitute each of the sides of the lower guide tube, there exists a weld portion welded to the surface in at least one location and an unwelded portion located separately from the weld portion, and a level difference at least as large as a distance equivalent to the weld shrinkage of the weld portion is provided between the end positions of the weld portion of the unwelded portion.

摘要翻译： 在接头结构中，具有多边形横截面的管构件可以通过全面穿透焊接而具有良好的强度裕度而接合到凸缘表面，而不会对焊接部分施加不合理的力。 该接合结构包括一个多边形的圆柱形下导向管，其通过对接焊接到具有与下导管相同形状的通孔的中间凸缘的表面上，其中在下导向管的端部处于直线部分 构成下引导管的每个侧面，在至少一个位置处存在焊接到表面的焊接部分和与焊接部分分开定位的未焊接部分，并且至少等于相当于 焊接部的焊接收缩率设置在未焊接部的焊接部的端部位置之间。

公开(公告)号：US08163460B2

公开(公告)日：2012-04-24

申请号：US11920840

申请日：2006-05-12

申请人： Satoshi Takei ,  Keisuke Hashimoto ,  Makoto Nakajima

发明人： Satoshi Takei ,  Keisuke Hashimoto ,  Makoto Nakajima

IPC分类号： G03F7/004 ,  G03F7/075 ,  G03F7/26

CPC分类号： G03F7/0752 ,  C09D183/16 ,  G03F7/11 ,  Y10S430/128

摘要： There is provided an underlayer coating for lithography that is used in lithography process of the manufacture of semiconductor devices, that can be used as a hardmask, and that causes no intermixing with photoresists; and a composition for forming the underlayer coating.The composition comprises a polysilane compound, a crosslinkable compound, a crosslinking catalyst and a solvent. The polysilane compound is preferably a polysilane compound having a bond between silicons at the main chain.

摘要翻译： 提供了用于光刻的底层涂层，其用于制造半导体器件的光刻工艺，其可以用作硬掩模，并且不会与光致抗蚀剂混合; 和用于形成下层涂层的组合物。 该组合物包含聚硅烷化合物，可交联化合物，交联催化剂和溶剂。 聚硅烷化合物优选为在主链上具有硅的键的聚硅烷化合物。

公开(公告)号：US08048615B2

公开(公告)日：2011-11-01

申请号：US12086167

申请日：2006-12-01

申请人： Satoshi Takei ,  Yusuke Horiguchi ,  Keisuke Hashimoto ,  Makoto Nakajima

发明人： Satoshi Takei ,  Yusuke Horiguchi ,  Keisuke Hashimoto ,  Makoto Nakajima

IPC分类号： G03F7/40 ,  G03F7/38 ,  G03F7/11

CPC分类号： H01L21/02126 ,  G03F7/0752 ,  G03F7/11 ,  H01L21/02282 ,  H01L21/0273 ,  H01L21/312

摘要： There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, includes a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).

摘要翻译： 提供了一种下层涂层，其用作半导体器件制造的光刻工艺中的光致抗蚀剂的底层，并且与根据蚀刻气体的类型的光致抗蚀剂相比具有高的干蚀刻速率，不与光致抗蚀剂混合 并且能够使具有高纵横比的孔的半导体衬底的表面变平; 以及用于形成下层涂层的下层涂层形成组合物。 在制造半导体器件的光刻工艺中通过光照射形成用作光致抗蚀剂底层的底层涂层组合物包括含有5〜45质量％的硅原子（A）的聚合性化合物， 光聚合引发剂（B）和溶剂（C）。

公开(公告)号：US20100210765A1

公开(公告)日：2010-08-19

申请号：US12678311

申请日：2008-09-30

申请人： Makoto Nakajima ,  Hideo Suzuki

发明人： Makoto Nakajima ,  Hideo Suzuki

IPC分类号： C08K5/1515 ,  C08K5/092 ,  C07D303/02

CPC分类号： G03F7/094 ,  G03F7/0757

摘要： There is provided a composition for forming a resist underlayer film that the adhesion with a resist applied on the resist underlayer film is enhanced and the collapse of a resist pattern is suppressed. A resist underlayer film-forming composition for lithography comprising: a polymer having silicon atoms in the backbone; a compound of a polycyclic structure; and an organic solvent, wherein the compound of a polycyclic structure has at least two carboxyl groups as substituents; the two carboxyl groups are individually bonded to two carbon atoms adjacent to each other forming the polycyclic structure; and the two carboxyl groups both have an endo configuration or an exo configuration, or have a cis configuration.

摘要翻译： 提供了用于形成抗蚀剂下层膜的组合物，其中抗蚀剂下层膜上施加的抗蚀剂的粘附性增强，并且抗蚀剂图案的崩溃被抑制。 一种用于光刻的抗蚀剂下层膜形成组合物，包括：在骨架中具有硅原子的聚合物; 多环结构的化合物; 和有机溶剂，其中多环结构的化合物具有至少两个羧基作为取代基; 两个羧基分别与彼此相邻的两个碳原子键合形成多环结构; 并且两个羧基都具有内部构型或外部构型，或具有顺式构型。

公开(公告)号：US20090162782A1

公开(公告)日：2009-06-25

申请号：US12086167

申请日：2006-12-01

申请人： Satoshi Takei ,  Yusuke Horiguchi ,  Keisuke Hashimoto ,  Makoto Nakajima

发明人： Satoshi Takei ,  Yusuke Horiguchi ,  Keisuke Hashimoto ,  Makoto Nakajima

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： H01L21/02126 ,  G03F7/0752 ,  G03F7/11 ,  H01L21/02282 ,  H01L21/0273 ,  H01L21/312

摘要： There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating.The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, comprises a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).

摘要翻译： 提供了一种下层涂层，其用作半导体器件制造的光刻工艺中的光致抗蚀剂的底层，并且与根据蚀刻气体的类型的光致抗蚀剂相比具有高的干蚀刻速率，不与光致抗蚀剂混合 并且能够使具有高纵横比的孔的半导体衬底的表面变平; 以及用于形成下层涂层的下层涂层形成组合物。 在制造半导体器件的光刻工艺中，通过光照射形成用于光致抗蚀剂的底层的下层涂层的下层涂层形成组合物包含含有5〜45质量％的硅原子（A）的聚合性化合物， 光聚合引发剂（B）和溶剂（C）。