公开(公告)号：US06682627B2

公开(公告)日：2004-01-27

申请号：US09962626

申请日：2001-09-24

申请人： Shamouil Shamouilian ,  Jennifer Y. Sun ,  Ananda H. Kumar

发明人： Shamouil Shamouilian ,  Jennifer Y. Sun ,  Ananda H. Kumar

IPC分类号： H05H100

CPC分类号： C04B41/009 ,  C04B41/4842 ,  C04B41/83 ,  H01J37/32467 ,  H01J2237/022 ,  C04B35/00 ,  C04B35/565

摘要： A substrate processing chamber has a substrate support, a gas supply, a gas exhaust, a gas energizer, and a wall about the substrate support, the wall having a porous ceramic material at least partially infiltrated with a fluorinated polymer, whereby a substrate on the substrate support may be processed by gas introduced by the gas supply, energized by the gas energizer, and exhausted by the gas exhaust.

摘要翻译： 衬底处理室具有衬底支撑件，气体供应器，气体排出器，气体激发器和围绕衬底支撑件的壁，所述壁具有至少部分地被氟化聚合物渗透的多孔陶瓷材料，由此， 衬底支撑件可以由气体源引入的气体进行处理，由气体激发器激励并被排气排出。

公开(公告)号：US06538872B1

公开(公告)日：2003-03-25

申请号：US09307214

申请日：2001-11-05

申请人： You Wang ,  Shamouil Shamouilian ,  Arnold Kholodenko ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Wing L. Cheng ,  Ananda H. Kumar

发明人： You Wang ,  Shamouil Shamouilian ,  Arnold Kholodenko ,  Alexander M. Veytser ,  Surinder S. Bedi ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Dennis S. Grimard ,  Wing L. Cheng ,  Ananda H. Kumar

IPC分类号： H01G2300

CPC分类号： H01L21/6833 ,  H01L21/67103

摘要： An electrostatic chuck 55 for holding a substrate 30 comprises an electrostatic member 100 made from a dielectric 115 covering an electrode 105 that is chargeable to electrostatically hold the substrate 30. A base 175 that includes a heater 235 is joined to the electrostatic member 100. The base may be made from a composite material, such as a porous ceramic infiltrated with the metal, and may be joined to the electrostatic member by a bond layer.

摘要翻译： 用于保持基板30的静电卡盘55包括由覆盖电极105的电介质115制成的静电构件100，电极105可充电以静电保持基板30.包括加热器235的基座175与静电构件100接合。 基底可以由复合材料制成，例如渗透有金属的多孔陶瓷，并且可以通过接合层与静电部件接合。

公开(公告)号：US06490144B1

公开(公告)日：2002-12-03

申请号：US09450791

申请日：1999-11-29

申请人： Kadthala R. Narendrnath ,  Syed H. Askari ,  Dennis S. Grimard ,  Surinder S. Bedi ,  Ananda H. Kumar ,  Shamouil Shamouilian

发明人： Kadthala R. Narendrnath ,  Syed H. Askari ,  Dennis S. Grimard ,  Surinder S. Bedi ,  Ananda H. Kumar ,  Shamouil Shamouilian

IPC分类号： H02N1300

CPC分类号： H01L21/67098 ,  H01L21/6831 ,  H02N13/00

摘要： A chamber 30 for processing a substrate 25 comprises a support 55 comprising a dielectric 60 enveloping an electrode 70. The electrode 70 may be chargeable to electrostatically hold the substrate 25 or may be chargeable to form an energized gas in the chamber 30 to process the substrate 25. A base 130 is below the support 55, and a compliant member 300 is positioned between the support 55 and the base 130. The compliant member 300 may be adapted to alleviate thermal stresses arising from a thermal expansion mismatch between the dielectric 60 and the base 130.

摘要翻译： 用于处理衬底25的室30包括支撑件55，其包括包围电极70的电介质60.电极70可以带电以静电保持衬底25，或者可以对腔室30中的带电气体进行充电以处理衬底 基座130在支撑件55下方，并且顺应构件300定位在支撑件55和基座130之间。顺应构件300可以适于减轻由电介质60和电介质60之间的热膨胀失配引起的热应力 基地130。

公开(公告)号：US06414834B1

公开(公告)日：2002-07-02

申请号：US09596108

申请日：2000-06-16

申请人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

发明人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC分类号： H02N1300

CPC分类号： H01J37/321 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises an electrode 110 at least partially covered by a semiconducting dielectric 115, wherein the semiconducting dielectric 115 may have an electrical resistance of from about 5×109 &OHgr;cm to about 8×1010 &OHgr;cm.

摘要翻译： 用于将衬底55保持在高密度等离子体中的静电卡盘100包括至少部分被半导体电介质115覆盖的电极110，其中半导体电介质115可具有约5×10 9欧姆到约8×10 10欧姆·厘米的电阻。

公开(公告)号：US06367412B1

公开(公告)日：2002-04-09

申请号：US09506111

申请日：2000-02-17

申请人： Kartik Ramaswamy ,  Kwok Manus Wong ,  Ashish Bhatnagar ,  Mehran Moalem ,  Tony S. Kaushal ,  Shamouil Shamouilian

发明人： Kartik Ramaswamy ,  Kwok Manus Wong ,  Ashish Bhatnagar ,  Mehran Moalem ,  Tony S. Kaushal ,  Shamouil Shamouilian

IPC分类号： C23C1600

CPC分类号： H01J37/32495 ,  B01D53/8662 ,  B01D2257/2066 ,  B01D2259/818 ,  C23C16/4412 ,  Y02C20/30

摘要： A plasma tube comprising a vacuum sealing ceramic outer tube, a porous ceramic insert disposed on the inside wall of the outer tube, and a source of high frequency radiation, for example, an RF coil wrapped around the tube, to excite gas flowing through the bore of the insert into a plasma. The invention is particularly useful as an exhaust scrubber for oxidizing exhaust gases from a semiconductor processing chamber. A catalyst may be embedded in the porous insert to promote the scrubbing reaction. The invention may also be used in an applicator of a remote plasma source.

摘要翻译： 一种等离子体管，包括真空密封陶瓷外管，设置在外管内壁上的多孔陶瓷插入件和高频辐射源，例如缠绕在管上的RF线圈，以激发流过 将插入孔插入等离子体。 本发明特别可用作用于氧化来自半导体处理室的废气的排气洗涤器。 催化剂可以嵌入多孔插入物中以促进洗涤反应。 本发明也可以用于远程等离子体源的施加器中。

公开(公告)号：US6151203A

公开(公告)日：2000-11-21

申请号：US212000

申请日：1998-12-14

申请人： Shamouil Shamouilian ,  Ananda Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Liang Guo Wang ,  Gerhard Schneider ,  Michael G. Chafin ,  Semyon Kats ,  Alexander Veytser ,  Senh Thach

发明人： Shamouil Shamouilian ,  Ananda Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Liang Guo Wang ,  Gerhard Schneider ,  Michael G. Chafin ,  Semyon Kats ,  Alexander Veytser ,  Senh Thach

IPC分类号： H01L21/68 ,  H01L21/683 ,  H01R13/05 ,  H02N13/00

CPC分类号： H01L21/6833 ,  H02N13/00 ,  H01R13/052

摘要： A semiconductor wafer chuck for retaining a semiconductor wafer during semiconductor wafer processing in a semiconductor wafer processing system including a connector connecting DC chucking voltage and RF biasing power to an electrode embedded in the body of the chuck. The connector for the chuck includes two or more members joined by resilient banana connections. The connector may be adapted for use as a high temperature connector for an electrostatic chuck operated at an elevated temperature and such connector includes a thermal impedance for reducing the heat transferred from the chuck to the bottom of the connector.

摘要翻译： 一种用于在半导体晶片处理系统中保持半导体晶片的半导体晶片卡盘，该半导体晶片处理系统包括将DC夹持电压和RF偏压功率连接到嵌入在卡盘的主体中的电极的连接器。 用于卡盘的连接器包括通过弹性香蕉连接件连接的两个或多个构件。 连接器可以适用于用于在高温下操作的静电卡盘的高温连接器，并且这种连接器包括用于减少从卡盘传递到连接器底部的热量的热阻抗。

公开(公告)号：US6094334A

公开(公告)日：2000-07-25

申请号：US261083

申请日：1999-03-02

申请人： Surinder S. Bedi ,  Shamouil Shamouilian ,  Syed H. Askari ,  Arnold Kholodenko ,  Jon T. Clinton ,  Alexander M. Veytser ,  Liang-Guo Wang ,  You Wang

发明人： Surinder S. Bedi ,  Shamouil Shamouilian ,  Syed H. Askari ,  Arnold Kholodenko ,  Jon T. Clinton ,  Alexander M. Veytser ,  Liang-Guo Wang ,  You Wang

IPC分类号： H01L21/683 ,  H01G23/00

CPC分类号： H01L21/6833

摘要： An electrostatic chuck 20 for holding a substrate 25 in a process chamber 30 comprises an electrostatic member 115 comprising a polymer 120 covering an electrode 125, the polymer 120 having a receiving surface 135 for receiving the substrate 25. A heater 130 abutting the polymer 120 is provided to heat the substrate 25 during processing of the substrate 25. The heater 130 has a resistance that is sufficiently low to heat the substrate 25 without causing excessive thermal degradation of the polymer 120.

摘要翻译： 用于将基板25保持在处理室30中的静电卡盘20包括包括覆盖电极125的聚合物120的静电部件115，聚合物120具有用于接收基板25的接收表面135.邻接聚合物120的加热器130是 提供用于在基板25的加工期间加热基板25.加热器130具有足够低的电阻以加热基板25而不引起聚合物120的过度热降解。

公开(公告)号：US5996218A

公开(公告)日：1999-12-07

申请号：US726445

申请日：1996-10-04

申请人： Shamouil Shamouilian ,  John F. Cameron ,  Chandra Deshpandey ,  Yuh-Jia Su

发明人： Shamouil Shamouilian ,  John F. Cameron ,  Chandra Deshpandey ,  Yuh-Jia Su

IPC分类号： H02N13/00 ,  H01L21/683 ,  H01R43/00

CPC分类号： H01L21/6831 ,  H01L21/6833 ,  Y10T29/49117

摘要： A method of forming an electrostatic chuck 20 for holding substrates 42 in a process chamber 40 containing a magnetic flux 43 is described. The method comprises the steps of forming a base 22 for supporting a substrate 42. An insulator 26 with an electrode 24 therein, is formed on the base 22. A magnetic shunt 34 comprising a ferromagnetic material is formed either (i) on the base 22, or (ii) in the insulator 26, or (iii) directly below, and contiguous to, the base 22.

摘要翻译： 描述了形成用于将基板42保持在包含磁通43的处理室40中的静电卡盘20的方法。 该方法包括形成用于支撑基底42的基底22的步骤。在基底22上形成有其中具有电极24的绝缘体26.包含铁磁材料的磁分路34（i）在基底22上形成 ，或（ii）在绝缘体26中，或（iii）直接在基座22的下方并与基座22相邻。

公开(公告)号：US5671117A

公开(公告)日：1997-09-23

申请号：US626667

申请日：1996-03-27

申请人： Semyon Sherstinsky ,  Shamouil Shamouilian ,  Manoocher Birang ,  Alfred Mak ,  Simon W. Tam

发明人： Semyon Sherstinsky ,  Shamouil Shamouilian ,  Manoocher Birang ,  Alfred Mak ,  Simon W. Tam

IPC分类号： B23Q3/15 ,  C23C16/458 ,  H01L21/00 ,  H01L21/683 ,  H02N13/00

CPC分类号： H02N13/00 ,  C23C16/4586 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23 ,  Y10T29/49117

摘要： An electrostatic chuck for securing a semiconductor wafer on a pedestal having multiple apertures for the introduction of cooling gas beneath the wafer. The multiple apertures reduce overheating near the wafer edge and provide lower temperature gradients across the wafer. The wafer is held by electrostatic force against a laminate of an electrode layer sandwiched between two dielectric layers in such a way that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction ensures that a large wafer area beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck.

摘要翻译： 一种用于将半导体晶片固定在具有多个孔的基座上以在晶片下方引入冷却气体的静电卡盘。 多个孔径减小晶片边缘附近的过热，并在晶片上提供较低的温度梯度。 晶片通过静电力抵抗夹在两个电介质层之间的电极层的层压体，使得层压体在晶片上呈现超过电极层的外边缘相当长的平面。 层压结构确保了超过电极外边缘的大的晶片区域与层压体接触，以使边缘附近的冷却气体泄漏最小化，并且通过增加电极层之间的电介质材料的路径长度来提供更长的使用寿命 并可能损坏卡盘周围的等离子体材料。

公开(公告)号：US5606485A

公开(公告)日：1997-02-25

申请号：US276735

申请日：1994-07-18

申请人： Shamouil Shamouilian ,  John F. Cameron

发明人： Shamouil Shamouilian ,  John F. Cameron

IPC分类号： H02N13/00 ,  H01L21/683

CPC分类号： H01L21/6833 ,  H01L21/6831

摘要： An electrostatic chuck having reduced erosion in erosive process environments is described. The electrostatic chuck comprises an insulator with (i) an electrode therein, (ii) a central portion overlying the electrode, and adapted to support a substrate thereon, and (iii) a peripheral portion extending beyond the electrode. In one version of the invention, the central portion of the insulator is raised relative to the lower peripheral portion of the insulator, thereby defining a step having a height H, which is maintained at less than about 10 microns, to reduce erosion of the insulator. In another version of the chuck, the peripheral portion of the insulator extends beyond the electrode and has a width W, which is maintained at at least about 2 mm to reduce erosion of the insulator.

摘要翻译： 描述了一种在侵蚀过程环境中减少侵蚀的静电卡盘。 静电卡盘包括绝缘体，其中具有（i）电极，（ii）覆盖电极的中心部分，并且适于在其上支撑衬底，以及（iii）延伸超过电极的外围部分。 在本发明的一个实施例中，绝缘体的中心部分相对于绝缘体的下部周边部分升高，由此限定了高度H保持在小于约10微米的台阶，以减少绝缘体的侵蚀 。 在卡盘的另一种形式中，绝缘体的周边部分延伸超过电极并且具有宽度W，其保持在至少约2mm以减小绝缘体的侵蚀。