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70 条记录 (耗时 0.03 秒)

    High density plasma process chamber
    4.
    发明授权
    High density plasma process chamber 失效
    高密度等离子体处理室

    公开(公告)号：US6095084A

    公开(公告)日：2000-08-01

    申请号：US893599

    申请日：1997-07-14

    申请人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Jonathan D. Mohn ,  Michael G. Chafin ,  Kenneth S. Collins

    发明人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Jonathan D. Mohn ,  Michael G. Chafin ,  Kenneth S. Collins

    IPC分类号： C23C16/00

    CPC分类号： C23C16/00

    摘要： A process chamber 55 for processing a semiconductor substrate 60 in a plasma, comprises a process gas distributor 100 for distributing process gas into a plasma zone 65 in the chamber. An inductor antenna 135 is used to form an inductive plasma from the process gas in the plasma zone. A primary bias electrode 145 on a ceiling 140 of the chamber 55 has a conducting surface 150 exposed to the plasma zone 65. A dielectric member 155 comprising a power electrode 165 embedded therein, has a receiving surface for receiving a substrate 60. A secondary bias electrode 170 below the dielectric member 155 has a conducting surface 175 exposed to the plasma zone 65. An electrode voltage supply 180 maintains the power electrode 165, primary bias electrode 145, and secondary bias electrode 170, at different electrical potentials to provide a high density, highly directional, plasma in the plasma zone 65 of the chamber 55.

    摘要翻译： 用于处理等离子体中的半导体衬底60的处理室55包括用于将处理气体分配到室中的等离子体区65中的处理气体分配器100。 电感天线135用于从等离子体区域中的处理气体形成感应等离子体。 腔室55的天花板140上的主偏压电极145具有暴露于等离子体区域65的导电表面150.包括嵌入其中的功率电极165的电介质构件155具有用于接收衬底60的接收表面。次级偏压 在电介质构件155下方的电极170具有暴露于等离子体区65的导电表面175.电极电压源180​​将功率电极165，初级偏压电极145和次级偏置电极170保持在不同的电位以提供高密度 ，在室55的等离子体区65中的高度方向性的等离子体。

    Multielectrode electrostatic chuck with fuses
    5.
    发明授权
    Multielectrode electrostatic chuck with fuses 失效
    带保险丝的多电极静电卡盘

    公开(公告)号：US5751537A

    公开(公告)日：1998-05-12

    申请号：US641938

    申请日：1996-05-02

    申请人： Ananda H. Kumar ,  Shamouil Shamouilian

    发明人： Ananda H. Kumar ,  Shamouil Shamouilian

    IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00

    CPC分类号： H01L21/6833

    摘要： A failure resistant electrostatic chuck 20 for holding a substrate 35 during processing of the substrate 35, is described. The chuck 20 comprises a plurality of electrodes 25 covered by an insulator 30, the electrodes 25 capable of electrostatically holding a substrate 35 when a voltage is applied thereto. An electrical power bus 40 has a plurality of output terminals 45 that conduct voltage to the electrodes 25. Fuses 50 electrically connect the electrodes 25 to the output terminals 45 of the power bus 40, each fuse 50 connecting at least one electrode 25 in series to an output terminal from the power bus 40. The fuses 50 are capable of electrically disconnecting the electrode 25 from the output terminals 45 when the insulator 30 punctures and exposes the electrode 25 to the process environment causing a current to flow through the fuse 50. A current detector 175 and electrical counter 180 can be used to provide early detection and counting of the number of failures of the electrodes 25 by detecting the current discharges through the fuses 50.

    摘要翻译： 描述了用于在基板35的加工期间保持基板35的防破坏静电卡盘20。 卡盘20包括被绝缘体30覆盖的多个电极25，当施加电压时能够静电保持基板35的电极25。 电力总线40具有向电极25传导电压的多个输出端子45.保险丝50将电极25电连接到电力总线40的输出端子45，每个保险丝50将至少一个电极25串联连接到 来自电源总线40的输出端子。当绝缘体30刺穿并将电极25暴露于使电流流过保险丝50的处理环境时，熔断器50能够将电极25与输出端子45电断开。 电流检测器175和电计数器180可以用于通过检测通过保险丝50的电流放电来提供对电极25的故障数量的早期检测和计数。

    Multi-layer ceramic electrostatic chuck with integrated channel
    6.
    发明授权
    Multi-layer ceramic electrostatic chuck with integrated channel 失效
    多层陶瓷静电卡盘，集成通道

    公开(公告)号：US06639783B1

    公开(公告)日：2003-10-28

    申请号：US09149807

    申请日：1998-09-08

    申请人： Shamouil Shamouilian ,  You Wang ,  Ananda H. Kumar

    发明人： Shamouil Shamouilian ,  You Wang ,  Ananda H. Kumar

    IPC分类号： H02N1300

    CPC分类号： H02N13/00 ,  Y10T279/23

    摘要： A semiconductor wafer support chuck having small diameter gas distribution ports for heat transfer gas. The diameter ports inhibit plasma ignition in heat transfer gas distribution channels. The ports are less than 20 mils in diameter less than 3 mm in length. The short length of the ports facilitates fabrication of multiple ports of very small diameter. The ports communicate with a gas distribution plenum integrated into the body of the chuck beneath a wafer support surface. The plenum has radial channels and a peripheral groove for distributing heat transfer gas to the wafer support surface.

    摘要翻译： 一种半导体晶片支撑卡盘，其具有用于传热气体的小直径气体分配端口。 直径端口禁止传热气体分配通道中的等离子体点火。 这些端口的直径小于20密耳，长度小于3毫米。 端口的短长度有助于制造非常小直径的多个端口。 端口与在晶片支撑表面下方集成到卡盘主体中的气体分配气室连通。 气室具有径向通道和用于将传热气体分配到晶片支撑表面的外围槽。