公开(公告)号：US06913651B2

公开(公告)日：2005-07-05

申请号：US10103015

申请日：2002-03-22

申请人： Igor Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

发明人： Igor Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

IPC分类号： C23C18/16 ,  H01L21/288 ,  B05C5/00 ,  B05C11/00

CPC分类号： C23C18/1676 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288

摘要： An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

公开(公告)号：US06902605B2

公开(公告)日：2005-06-07

申请号：US10379692

申请日：2003-03-06

申请人： Artur Kolics ,  Nicolai Petrov ,  Chiu Ting ,  Igor Ivanov

发明人： Artur Kolics ,  Nicolai Petrov ,  Chiu Ting ,  Igor Ivanov

IPC分类号： C23C18/36 ,  C23C18/50 ,  C23C18/34 ,  B05D1/18

CPC分类号： H01L21/288 ,  C23C18/36 ,  C23C18/50 ,  H01L21/76849

摘要： The present invention relates to compositions and a method for electroless formation of alkaline-metal-free coatings on the basis of cobalt and composition of cobalt with tungsten and phosphorus, which have high resistance to oxidation and stability of electrical characteristics, when the Co—Cu system layer is used in IC chips. The composition of the electroless solution contains more than one reducing agents, one of which can catalyze the initial electroless deposition layer of cobalt on copper (called initiator), while the other maintains deposition of cobalt on the aforementioned initial layer as the process is continued. Small amount (100-5000 ppm) of elements from the initiator also builds into the electroless film, which is expected to further improve the barrier properties of the resultant film compared to the deposition bath without initiator. Such coating may find application in semiconductor manufacturing where properties of deposited films and controllability of the composition and physical and chemical characteristics of the deposited films may be critically important.

摘要翻译： 本发明涉及组合物和无碱形成无碱金属的涂层的方法，其中钴和钴与钨和磷的组成具有很高的耐氧化性和电特性的稳定性，当Co-Cu 系统层用于IC芯片。 无电溶液的组成包含多于一种还原剂，其中之一可以催化铜上的钴的初始无电沉积层（称为引发剂），而另一种还原剂继续在上述初始层上沉积钴。 来自引发剂的少量（100-5000ppm）元素也构成化学镀膜，预期与无引发剂的沉积浴相比，可以进一步提高所得膜的阻隔性能。 这种涂层可以应用于半导体制造中，其中沉积膜的性质和组成的可控性以及沉积膜的物理和化学特性可能是至关重要的。

公开(公告)号：US06183998B2

公开(公告)日：2001-02-06

申请号：US09183950

申请日：1998-10-31

申请人： Igor Ivanov ,  Dirk Löffert ,  Jie Kang ,  Joachim Ribbe ,  Kerstin Steinert

发明人： Igor Ivanov ,  Dirk Löffert ,  Jie Kang ,  Joachim Ribbe ,  Kerstin Steinert

IPC分类号： C12P1934

CPC分类号： C12N9/99 ,  C12N9/1252 ,  C12Q1/6848 ,  C12Q2527/125 ,  C12Q2527/101

摘要： A method for the amplification of a target nucleic acid is disclosed comprising the steps of reacting a nucleic acid with an amplification reaction mixture and a modified thermostable enzyme, wherein said modified thermostable polymerase is prepared by a reaction of a mixture of a thermostable polymerase and a chemical modifying reagent. The chemical modification reagent is an aldehyde, preferably formaldehyde. Essentially complete inactivation of the enzyme at ambient temperatures is achieved, with recovery of enzymatic activity at temperatures above 50° C.

摘要翻译： 公开了扩增靶核酸的方法，其包括使核酸与扩增反应混合物和修饰的热稳定酶反应的步骤，其中所述修饰的热稳定聚合酶通过热稳定聚合酶和 化学改性剂。 化学改性剂是醛，优选甲醛。 实现了在环境温度下酶的基本完全失活，并且在高于50℃的温度下回收酶活性。

公开(公告)号：US08622017B2

公开(公告)日：2014-01-07

申请号：US13111859

申请日：2011-05-19

申请人： Igor Ivanov ,  Robert D. Tas ,  Shashank Ravindra Kulkarni ,  Ron Rulkens

发明人： Igor Ivanov ,  Robert D. Tas ,  Shashank Ravindra Kulkarni ,  Ron Rulkens

IPC分类号： B05C5/02

CPC分类号： C23C18/1683 ,  C23C18/1628 ,  C23C18/1682

摘要： An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.

摘要翻译： 无电解电镀系统包括电镀液，并且控制电镀液中的还原剂，用于沉积超过约五百纳米并隔离大约一千纳米的离子值特征。

公开(公告)号：US08352921B2

公开(公告)日：2013-01-08

申请号：US12263417

申请日：2008-10-31

申请人： Kirill Jegoulev ,  Igor Ivanov ,  Artem Frolov

发明人： Kirill Jegoulev ,  Igor Ivanov ,  Artem Frolov

IPC分类号： G06F9/44 ,  G06F9/45

CPC分类号： G06F11/3604 ,  G06F8/437 ,  G06F9/4491

摘要： A computer-implemented error detection mechanism for detecting programming errors in a computer program. The computer-implemented error detection method described herein can make use of a Function Behavior Knowledge Base (FBKB) to approximate how a virtual function changes state of the program execution for all methods that can be called at each specific invocation point. The FBKB is used to select what implementation of a virtual function should be called in order to give rise to a programming defect. By dropping implementations that do not lead to a programming defect, the set of possible object runtime types is reduced. If this set is empty by the end of the analysis, then a defect is not possible, otherwise the set of object runtime types will contain types that may cause a defect.

摘要翻译： 一种用于检测计算机程序中的编程错误的计算机实现的错误检测机制。 本文描述的计算机实现的错误检测方法可以利用功能行为知识库（FBKB）来近似虚拟函数如何改变在每个特定调用点可以调用的所有方法的程序执行状态。 FBKB用于选择应该调用虚拟函数的实现以引起编程缺陷。 通过删除不会导致编程缺陷的实现，减少了可能的对象运行时类型的集合。 如果分析结束时该集合为空，则不可能出现缺陷，否则对象运行时类型集合将包含可能导致缺陷的类型。

公开(公告)号：US08048888B2

公开(公告)日：2011-11-01

申请号：US12084740

申请日：2006-11-13

申请人： Katja Wosikowski-Buters ,  Christoph Schaab ,  Marino Schuhmacher ,  Franz Obermayr ,  Igor Ivanov

发明人： Katja Wosikowski-Buters ,  Christoph Schaab ,  Marino Schuhmacher ,  Franz Obermayr ,  Igor Ivanov

IPC分类号： A01N43/54

CPC分类号： A61K31/555 ,  A61K31/505 ,  A61K33/24 ,  A61K45/06 ,  A61K2300/00

摘要： The present invention describes a method or uses of prevention and/or treatment of a cancer or a tumor, and in particular to a combination therapy, methods, compositions and pharmaceutical packages comprising an inhibitor of receptors of the EGFR family or a chemotherapeutically active pyrimidine analogue and certain platinum-based chemotherapeutic agents.

摘要翻译： 本发明描述了预防和/或治疗癌症或肿瘤的方法或用途，特别是涉及包含EGFR家族受体抑制剂或化学治疗活性嘧啶类似物的组合疗法，方法，组合物和药物包装 和某些铂类化疗剂。

公开(公告)号：US07226856B1

公开(公告)日：2007-06-05

申请号：US10990273

申请日：2004-11-15

申请人： Sergey D. Lopatin ,  Robert Fiordalice ,  Faivel Pintchovski ,  Igor Ivanov ,  Wen Z. Kong ,  Artur Kolics

发明人： Sergey D. Lopatin ,  Robert Fiordalice ,  Faivel Pintchovski ,  Igor Ivanov ,  Wen Z. Kong ,  Artur Kolics

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76868 ,  H01L21/76874 ,  Y10S977/723

摘要： An integrated circuit and a method of manufacturing an integrated circuit is provided including providing an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is formed over the dielectric layer in the trench and via, and a conductor is deposited over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.

摘要翻译： 提供一种集成电路和集成电路的制造方法，包括提供具有在电介质层中设置的沟槽和通孔的集成电路。 纳米电极阵列形成在沟槽和通孔中的电介质层之上，导体沉积在纳米电极阵列上。 导体和纳米电极阵列与电介质层的表面共面。

公开(公告)号：US20070014923A1

公开(公告)日：2007-01-18

申请号：US11533042

申请日：2006-09-19

申请人： Igor Ivanov

发明人： Igor Ivanov

IPC分类号： B05D3/04 ,  B05D1/36

CPC分类号： C23C18/1651 ,  C23C18/168 ,  H01L21/288

摘要： A film formation method is provided which includes positioning an object within an electroless deposition apparatus having means for instantaneous temperature control of the object and electrolessly depositing a material upon the object. More specifically, the method includes instantaneously changing the temperature of the object by the means of instantaneous control at one or more predetermined times during the step of electrolessly depositing the material, wherein the predetermined times correspond to different film-growth stages of the material.

摘要翻译： 提供一种成膜方法，其包括将物体定位在无电沉积设备内，具有用于物体的瞬时温度控制的装置和将材料无电沉积在物体上。 更具体地，该方法包括在无电沉积材料的步骤期间通过瞬时控制的方式在一个或多个预定时间瞬间改变物体的温度，其中预定时间对应于材料的不同的膜生长阶段。

公开(公告)号：US20060030157A1

公开(公告)日：2006-02-09

申请号：US11199657

申请日：2005-08-09

申请人： Igor Ivanov

发明人： Igor Ivanov

IPC分类号： B24B29/00 ,  H01L21/461

CPC分类号： H01L21/76841 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

摘要： An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectronic topography and a rotatable case with sidewalls arranged on opposing sides of the substrate holder. The method of using such an apparatus includes positioning a microelectronic topography upon a substrate holder of a processing chamber, exposing the microelectronic topography to a fluid within the processing chamber, and rotating a case of the processing chamber. The rotation is sufficient to affect movement of the fluid relative to the surface of the microelectronic topography. A method for passivating hardware of a microelectronic processing chamber includes exposing the hardware to an organic compound and subsequently exposing the hardware to an agent configured to form polar bonds with the organic compound.

摘要翻译： 提供了一种用于处理微电子拓扑的装置，这种装置的使用方法以及用于钝化微电子处理室的硬件的方法。 该装置包括：衬底保持器，其构造成支撑微电子形貌;以及旋转壳体，其具有布置在衬底保持器的相对侧上的侧壁。 使用这种装置的方法包括将微电子形貌定位在处理室的衬底保持器上，将微电子拓扑暴露于处理室内的流体，以及旋转处理室的壳体。 旋转足以影响流体相对于微电子拓扑的表面的运动。 用于钝化微电子处理室的硬件的方法包括将硬件暴露于有机化合物，随后将硬件暴露于配置为与有机化合物形成极性键的试剂。

公开(公告)号：US20050221015A1

公开(公告)日：2005-10-06

申请号：US11138531

申请日：2005-05-26

申请人： Igor Ivanov ,  Jonathan Zhang ,  Artur Kolics

发明人： Igor Ivanov ,  Jonathan Zhang ,  Artur Kolics

IPC分类号： C23C18/16 ,  H01L21/288 ,  C25D3/56

CPC分类号： C23C18/1676 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288

摘要： An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

摘要翻译： 本发明的装置具有一个能够被密封并能承受增加的压力和高温的封闭室。 所述腔室包含能够围绕垂直轴线旋转的衬底保持器，以及衬底保持器内部的边缘抓握机构。 沉积室具有用于供应各种处理液体的多个入口端口，例如沉积溶液，用于冲洗的去离子水等，以及用于在压力下供应气体的端口。 该设备还设置有用于处理液体和气体的储存器和罐，以及用于控制室中的温度和压力的溶液加热器和控制系统。 加热器可以位于工作室外部或内置于基板支架中，也可以同时使用两个加热器。 通过在压力下和稍低于溶液沸点的温度下进行沉积工艺来实现均匀沉积。 该解决方案可以从上面通过形成在盖中的淋浴喷头或者通过室的底部供应。 冲洗或其它辅助溶液经由可平行于其上的衬底上方的可径向移动的化学分配臂供应。