公开(公告)号：US10181823B1

公开(公告)日：2019-01-15

申请号：US15652079

申请日：2017-07-17

Applicant: pSemi Corporation

Inventor： Chih-Chieh Cheng ,  Tero Tapio Ranta

IPC: H03F3/191 ,  H03F1/30 ,  H03F3/195 ,  H03F3/213 ,  H03F1/56

Abstract: A ultra-compact coupler designed to sample the actual output power of a power amplifier and which is “VSWR insensitive”, such that reflected power is essentially not coupled to a detector circuit and only forward power is detected and processed. In a first embodiment, a coupler is situated between the final amplifier stage of a power amplifier and an output impedance matching network, and is specially configured for operation in a low impedance environment in conjunction with a detector circuit, thereby substantially reducing the areal size of the coupler. In a second embodiment, a coupler is integrated within an output impedance matching network coupled to the final amplifier stage of a power amplifier so as to share an inductor between the coupler and the output impedance matching network, thereby further substantially reducing the areal size of the coupler.

公开(公告)号：US10038414B2

公开(公告)日：2018-07-31

申请号：US15372260

申请日：2016-12-07

Applicant: pSemi Corporation

Inventor： Tero Tapio Ranta ,  Chih-Chieh Cheng ,  Kevin Roberts

IPC: H03F1/56 ,  H03F3/19 ,  H03F3/21

CPC classification number: H03F1/56 ,  H03F3/19 ,  H03F3/195 ,  H03F3/213 ,  H03F2200/378 ,  H03F2200/387 ,  H03F2200/451

Abstract: An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.

公开(公告)号：US20180175807A1

公开(公告)日：2018-06-21

申请号：US15895863

申请日：2018-02-13

Applicant: pSemi Corporation

Inventor： Hossein Noori ,  Chih-Chieh Cheng

IPC: H03F1/32 ,  H03G3/10 ,  H03G3/00 ,  H03F3/195 ,  H03F1/56

CPC classification number: H03F1/3205 ,  H03F1/56 ,  H03F3/195 ,  H03F3/72 ,  H03F2200/18 ,  H03F2200/21 ,  H03F2200/211 ,  H03F2200/213 ,  H03F2200/222 ,  H03F2200/225 ,  H03F2200/24 ,  H03F2200/243 ,  H03F2200/249 ,  H03F2200/27 ,  H03F2200/294 ,  H03F2200/297 ,  H03F2200/301 ,  H03F2200/306 ,  H03F2200/312 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/399 ,  H03F2200/417 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/489 ,  H03F2200/492 ,  H03F2200/495 ,  H03F2200/546 ,  H03F2200/72 ,  H03F2200/75 ,  H03G1/0029 ,  H03G1/0088 ,  H03G1/0094 ,  H03G3/001 ,  H03G3/008 ,  H03G3/10 ,  H03G2201/106 ,  H03G2201/307 ,  H03G2201/504

Abstract: A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” input stage and a “common gate” output stage can be turned on or off using the gate of the output stage. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input stage of each cascode. Further switches used for switching degeneration inductors, gate/sources caps and gate to ground caps for each legs can be used to further improve the matching performance of the invention.