公开(公告)号：US07718559B2

公开(公告)日：2010-05-18

申请号：US11738030

申请日：2007-04-20

Applicant: Jie Yuan ,  Jennifer Y. Sun ,  Renguan Duan

Inventor： Jie Yuan ,  Jennifer Y. Sun ,  Renguan Duan

IPC: C03C3/06 ,  C03C3/04

CPC classification number: C03C3/06 ,  C03B32/00 ,  C03B2201/24 ,  C03B2201/34 ,  C03B2201/36 ,  C03C2201/3411 ,  C03C2201/36 ,  C03C2203/54 ,  H01L21/67069 ,  H01L21/68721 ,  H01L21/68735 ,  H01L21/68757 ,  Y02P40/57 ,  Y10S156/915

Abstract: A method of fabricating doped quartz component is provided herein. In one embodiment, the doped quartz component is a yttrium doped quartz ring configured to support a substrate. In another embodiment, the doped quartz component is a yttrium and aluminum doped cover ring. In yet another embodiment, the doped quartz component is a yttrium, aluminum and nitrogen containing cover ring.

Abstract translation: 本文提供了一种制造掺杂石英组分的方法。 在一个实施例中，掺杂的石英组件是被配置为支撑衬底的掺钇的石英环。 在另一个实施例中，掺杂的石英组件是掺钇和铝的覆盖环。 在另一个实施方案中，掺杂的石英组分是含钇，铝和氮的覆盖环。

公开(公告)号：US20090163344A1

公开(公告)日：2009-06-25

申请号：US12226861

申请日：2007-09-04

Applicant: Juergen Weber ,  Tatsuhiro Sato ,  Ralf Schneider ,  Achim Hofmann ,  Christian Gebauer

Inventor： Juergen Weber ,  Tatsuhiro Sato ,  Ralf Schneider ,  Achim Hofmann ,  Christian Gebauer

IPC: C03C3/04 ,  C03B19/06 ,  C03B20/00

CPC classification number: C03C3/06 ,  C03B19/06 ,  C03B19/066 ,  C03B20/00 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/24 ,  C03B2201/34 ,  C03B2201/36 ,  C03C4/20 ,  C03C2201/23 ,  C03C2201/24 ,  C03C2201/3411 ,  C03C2201/3435 ,  C03C2203/10 ,  C03C2203/54

Abstract: The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiO2 and dopant). Starting from this, to provide a quartz glass component for use in semiconductor manufacture in an environment with etching action, which component is distinguished by both high purity and high resistance to dry etching and avoids known drawbacks caused by co-doping with aluminum oxide, it is suggested according to the invention that the first dopant should be nitrogen and that the mean content of metastable hydroxyl groups of the quartz glass is less than 30 wtppm.

Abstract translation: 本发明从用于半导体制造的石英玻璃的已知组件开始，至少在近表面区域中的该组分表现出第一掺杂剂和第二氧化物掺杂剂的共掺杂，所述第二掺杂剂含有一种或多种稀有金属 - 浓度为0.1-3重量％的矿物金属。 每个（基于SiO 2和掺杂剂的总质量）。 从此开始，为了在具有蚀刻作用的环境中提供用于半导体制造的石英玻璃组分，该组分通过高纯度和高耐干蚀刻性而被区分，并避免了与氧化铝共掺杂引起的已知缺点。 根据本发明建议第一掺杂剂应为氮，并且石英玻璃的亚稳态羟基的平均含量小于30重量ppm。

公开(公告)号：US07111476B2

公开(公告)日：2006-09-26

申请号：US10139940

申请日：2002-05-07

Applicant: Ted A Loxley ,  John F. Blackmer ,  Klaus-Markus Peters

Inventor： Ted A Loxley ,  John F. Blackmer ,  Klaus-Markus Peters

IPC: C03B8/02 ,  C03B19/02

CPC classification number: C03B19/12 ,  C03B19/06 ,  C03B19/066 ,  C03B20/00 ,  C03B2201/24

Abstract: Cup-shaped porous silica preforms suitable for manufacture of large 24-inch crucibles used in Czochralski crystal-growing furnaces are produced by a unique electrophoretic casting process using a high-purity aqueous silica slip or slurry having a predetermined particle-size distribution, an average particle size of from 6 to 10 microns and a solids content of from 80 to 85 percent by weight. The slurry contains an electrolyte, such as ammonium hydroxide, has a pH of from 7.5 to 8.5, and can be wet milled at a pH of at least 7 in such manner as to provide the micronized silica particles with excellent electrophoretic mobility, thereby providing a superb process for economical mass production of large pure silica preforms using safe voltages, such as 20 to 40 volts. The electrophoretic casting apparatus can be of the type shown in FIGS. 1 and 2 and includes a permeable porous cup-shaped carbon-graphite mold (2) that serves as a positive anode and an internal reticulate or perforated cathode (3) of similar shape having a thin pervious cover means, such as the shroud 25, to prevent local dilution of the slurry at the cathode.

Abstract translation: 用于制造用于切克劳斯基晶体生长炉的大型24英寸坩埚的杯状多孔二氧化硅预制件通过使用具有预定粒度分布的高纯度水性二氧化硅滑石或浆料的独特的电泳铸造方法生产，平均 粒度为6至10微米，固体含量为80至85重量％。 该浆料含有电解质如氢氧化铵，其pH值为7.5-8.5，并且可以在pH至少为7的条件下进行湿法研磨，以使微粉化的二氧化硅颗粒具有优异的电泳迁移率，从而提供了一种 使用安全电压（例如20至40伏特）大规模生产大型纯二氧化硅预制件的卓越工艺。 电泳铸造装置可以是图1和图2所示的类型。 如图1和图2所示，并且包括用作正阳极的可渗透多孔杯形碳 - 石墨模具（2）和具有类似形状的内部网状或多孔阴极（3），其具有薄的可透过的覆盖装置，例如护罩25， 以防止浆料在阴极处的局部稀释。

公开(公告)号：US20020106174A1

公开(公告)日：2002-08-08

申请号：US10068968

申请日：2002-02-07

Inventor： Ikerionwu Asiegbu Akwani ,  Robert Alan Bellman ,  Thomas Paul Grandi ,  Paul Arthur Sachenik

IPC: G02B006/10

CPC classification number: C01B21/0821 ,  C01P2006/32 ,  C01P2006/60 ,  C03B19/1453 ,  C03B32/00 ,  C03B2201/24 ,  C03B2201/31 ,  C03C3/045 ,  C03C3/111 ,  C03C2201/24 ,  C03C2201/31 ,  Y10T428/265

Abstract: A composition represented by the formula Si1nullxGexO2(1nully)N1.33y, wherein x is from about 0.05 to about 0.6 and y is from about 0.14 to about 0.74 exhibits properties highly suited for use in fabricating waveguides for liquid crystal based optical devices. In particular, the compositions have an index of refraction of from about 1.6 to about 1.8 for light at a wavelength of 1550 nm, and/or a coefficient of thermal expansion of from about 2.5null10null6null C.null1 to about 5.0null10null6null C. null1. The compositions also have inherently low hydrogen content, and a high hydrogen permeability which allows better hydrogen removal by thermal annealing to provide a material which exhibits low optical losses and better etching properties than alternative materials.

Abstract translation: 由式Si1-xGexO2（1-y）N1.33y表示的组合物，其中x为约0.05至约0.6，y为约0.14至约0.74，表现出非常适合用于制造液晶基光学波导的性能 设备。 特别地，组合物对于波长1550nm的光具有约1.6至约1.8的折射率，和/或约2.5×10-6℃-1至约5.0×10 10的热膨胀系数 -6℃-1。 组合物还具有固有的低氢含量和高的氢渗透性，其允许通过热退火更好的氢去除以提供与替代材料相比表现出低的光损耗和更好的蚀刻性能的材料。

公开(公告)号：US06408125B1

公开(公告)日：2002-06-18

申请号：US09437677

申请日：1999-11-10

Applicant: Ikerionwu Asiegbu Akwani ,  Robert Alan Bellman ,  Thomas Paul Grandi ,  Paul Arthur Sachenik

Inventor： Ikerionwu Asiegbu Akwani ,  Robert Alan Bellman ,  Thomas Paul Grandi ,  Paul Arthur Sachenik

IPC: G02B600

CPC classification number: C01B21/0821 ,  C01P2006/32 ,  C01P2006/60 ,  C03B19/1453 ,  C03B32/00 ,  C03B2201/24 ,  C03B2201/31 ,  C03C3/045 ,  C03C3/111 ,  C03C2201/24 ,  C03C2201/31 ,  Y10T428/265

Abstract: A composition represented by the formula Si1−xGexO2(1−y)N1.33y, wherein x is from about 0.05 to about 0.6 and y is from about 0.14 to about 0.74 exhibits properties highly suited for use in fabricating waveguides for liquid crystal based optical devices. In particular, the compositions have an index of refraction of from about 1.6 to about 1.8 for light at a wavelength of 1550 nm, and/or a coefficient of thermal expansion of from about 2.5×10−6° C.−1 to about 5.0×10−6° C.−1. The compositions also have inherently low hydrogen content, and a high hydrogen permeability which allows better hydrogen removal by thermal annealing to provide a material which exhibits low optical losses and better etching properties than alternative materials.

Abstract translation: 由式Si1-xGexO2（1-y）N1.33y表示的组合物，其中x为约0.05至约0.6，y为约0.14至约0.74，表现出非常适合用于制造液晶基光学波导的性能 设备。 特别地，组合物对于波长1550nm的光具有约1.6至约1.8的折射率，和/或约2.5×10-6℃-1至约5.0×10 10的热膨胀系数 -6℃-1。 组合物还具有固有的低氢含量和高的氢渗透性，其允许通过热退火更好的氢去除以提供与替代材料相比表现出低的光损耗和更好的蚀刻性能的材料。

公开(公告)号：US06355587B1

公开(公告)日：2002-03-12

申请号：US08914288

申请日：1997-08-18

Applicant: Ted A. Loxley ,  John F. Blackmer ,  Klaus-Markus Peters

Inventor： Ted A. Loxley ,  John F. Blackmer ,  Klaus-Markus Peters

IPC: C03B2000

CPC classification number: C03B19/12 ,  C03B19/06 ,  C03B19/066 ,  C03B20/00 ,  C03B2201/24 ,  Y02P40/57 ,  Y10S65/08

Abstract: The application discloses a number of unique sintered quartz glass products together with new silica compositions and processes for making and using such products. Nitrided clear and opaque nitrided quartz products are disclosed having incredible physical properties resulting from the incorporation of very small, but effective, amounts (e.g., 25 ppm or more) of chemically bound nitrogen. Opaque quartz glass heat shields with remarkable resistance to transmission of infrared radiation are disclosed which can have a high bubble population density, such as 80 to 120 per mm2. These heat shields make possible remarkable improvement in the performance of tube furnaces and other reactors used in processing silicon wafers and other electronic components.

Abstract translation: 该申请公开了许多独特的烧结石英玻璃产品以及新的二氧化硅组合物和制备和使用这些产品的方法。 公开了氮化透明和不透明的氮化石英产物，其具有由于引入非常小但有效的化学键合氮的量（例如25ppm或更多）而产生的令人难以置信的物理性质。 公开了具有显着的抗红外辐射透射性的不透明石英玻璃隔热罩，其可以具有高的气泡总体密度，例如80至120 / mm 2。 这些隔热罩可以显着改善用于处理硅晶片和其他电子部件的管式炉和其他反应器的性能。

公开(公告)号：US06280522B1

公开(公告)日：2001-08-28

申请号：US09508695

申请日：2000-03-29

Applicant: Hiroyuki Watanabe ,  Hiroyuki Miyazawa ,  Tatsuhiro Sato ,  Satoshi Soeta ,  Tetsuya Igarashi

Inventor： Hiroyuki Watanabe ,  Hiroyuki Miyazawa ,  Tatsuhiro Sato ,  Satoshi Soeta ,  Tetsuya Igarashi

IPC: C30B1322

CPC classification number: C03B19/095 ,  C03B2201/23 ,  C03B2201/24 ,  C30B15/10 ,  C30B35/002 ,  Y10S65/08

Abstract: There is provided a quartz glass crucible for pulling a silicon single crystal and a production process for the crucible, wherein an inner surface of the crucible is crystallized without addition of impurities during pulling a silicon single crystal, thereby impurities serving as causes of crystal defects being not incorporated into the silicon single crystal, so that deterioration of its inner surface is suppressed to improve a crystallization ratio, and accordingly productivity of the quartz glass crucible as well as a quality of the silicon single crystal is improved, and the quartz glass crucible for pulling a silicon single crystal comprises a crucible base body (3) made of a translucent quartz glass layer and a synthetic quartz glass layer (4) formed on an inner wall surface of the crucible base body (3), wherein a portion encircled by a brown ring on an inner surface of the quartz glass crucible is uniformly crystallized during pulling the silicon single crystal.

Abstract translation: 提供了一种用于拉制硅单晶的石英玻璃坩埚和用于坩埚的制造方法，其中在拉取硅单晶时坩埚的内表面结晶而不添加杂质，从而导致晶体缺陷的原因是 不掺入到硅单晶中，从而抑制其内表面的劣化以提高结晶化率，从而提高了石英玻璃坩埚的生产率以及硅单晶的质量，并且提高了石英玻璃坩埚 拉硅单晶包括由半透明石英玻璃层制成的坩埚基体（3）和形成在坩埚基体（3）的内壁表面上的合成石英玻璃层（4），其中包围由 石英玻璃坩埚的内表面上的棕色环在拉制硅单晶时均匀结晶。

公开(公告)号：US5881090A

公开(公告)日：1999-03-09

申请号：US668257

申请日：1996-06-20

Applicant: Akihito Yamamoto ,  Hideyuki Kobayashi

Inventor： Akihito Yamamoto ,  Hideyuki Kobayashi

IPC: C03B20/00 ,  C03B8/04 ,  C03B19/01 ,  C03B19/09 ,  C03B19/10 ,  C03C3/04 ,  C03C3/06 ,  H01L21/02 ,  H01L21/673 ,  H01L21/683 ,  C03B5/193 ,  C03C15/00

CPC classification number: C03C3/045 ,  C03B19/01 ,  C03B19/09 ,  C03B19/1025 ,  C03B2201/24

Abstract: An inner chamber is arranged inside an outer chamber and stores quartz crystal powder. A space is defined between the inner chamber and the outer chamber, and an oxygen gas is introduced into that space. The quartz crystal powder is supplied from the inner chamber into a burner section, together with the oxygen gas. The burner section is also supplied with a flammable gas from a gas control device. The flammable gas contains an NH.sub.3 gas. The heat produced by the combustion of the flammable and oxygen gases fuses the quartz crystal powder supplied from the inner chamber into the burner section. As a result, quartz containing nitrogen is produced. The nitrogen is contained in the fused quartz in an amount which is expressed as 1 to 10% by molar ratio.

Abstract translation: 内室设置在外室内并储存石英晶体粉末。 在内室和外室之间限定一个空间，并将氧气引入该空间。 石英晶体粉末与氧气一起从内室供应到燃烧器部分。 燃烧器部分还提供有来自气体控制装置的可燃气体。 易燃气体含有NH3气体。 由可燃性和氧气燃烧产生的热量将从内腔供应的石英晶体粉末熔化到燃烧器部分。 结果，产生含有氮的石英。 熔融石英中含有的氮以1〜10摩尔％表示。

公开(公告)号：US5102438A

公开(公告)日：1992-04-07

申请号：US147333

申请日：1988-01-22

Applicant: Richard T. Newbould ,  Susan J. Charlton ,  Stephen J. Wilson

Inventor： Richard T. Newbould ,  Susan J. Charlton ,  Stephen J. Wilson

IPC: C03B37/10 ,  C03B37/014 ,  C03B37/029 ,  C03C25/22 ,  G02B6/00 ,  G02B6/44

CPC classification number: C03C25/22 ,  C03B37/029 ,  C03B2201/24 ,  C03B2201/58 ,  Y10S65/90

Abstract: In order to eliminate the effect of water attack on silica optical fibres, the fibres are provided with a surface layer of silicon nitride or silicon oxynitride. The method proposed includes direct nitridation. This may be achieved by adding a nitriding atmosphere to the drawing furnace gases, or to the reactive gases (TiCl.sub.4 and SiCl.sub.4) incorporated in the flame of an oxyhydrogen torch for the formation of a compressive silica/titania layer on an optical fibre by a glass soot deposition and sintering process.

公开(公告)号：US3999835A

公开(公告)日：1976-12-28

申请号：US523739

申请日：1974-11-14

Applicant: George Reginald Newns ,  Keith John Beales

Inventor： George Reginald Newns ,  Keith John Beales

IPC: B01J19/08 ,  C03B37/014 ,  C03B37/018 ,  C03C3/04 ,  C03C3/06 ,  C03C4/16 ,  C03C13/04 ,  G02B6/00 ,  G02B6/02 ,  H05H1/00 ,  H05H1/30 ,  G02B5/14

CPC classification number: H05H1/30 ,  C03B37/01413 ,  C03B37/01426 ,  C03B37/01815 ,  C03C13/045 ,  C03C3/045 ,  G02B6/02 ,  H05H1/00 ,  C03B2201/24

Abstract: Dielectric optical waveguides can be made having a core of vitreous silica doped with nitrogen in the form of silicon nitride, and a cladding of pure vitreous silica. Silicon nitride may be present in the core material in quantities varying between .1% to 10% by weight. The silicon nitride doped silica glass can be formed in a boule by passing a mixture of gaseous compounds containing silicon and nitrogen through a induction coupled plasma discharge. The outside of the doped silica boule may be oxidized to reduce the nitrogen content.

Abstract translation: 介质光波导可以制成具有掺杂有氮化硅形式的氮的玻璃态二氧化硅芯和纯二氧化硅的包层。 氮化硅可以以0.1重量％至10重量％的量存在于芯材中。 氮化硅掺杂的石英玻璃可以通过使含有硅和氮的气态化合物的混合物通过感应耦合的等离子体放电而形成在一个原子棒中。 可以将掺杂的二氧化硅焦炭的外部氧化以降低氮含量。