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    PIN BENDING DEVICE
    394.
    发明申请
    PIN BENDING DEVICE 失效
    PIN弯曲装置

    公开(公告)号：US20090266136A1

    公开(公告)日：2009-10-29

    申请号：US12177835

    申请日：2008-07-22

    Applicant: CHUN-NAN OU ,  BIN WANG ,  CHENG-BIN SU ,  JIAN-LONG XING ,  GA-LEI HU

    Inventor： CHUN-NAN OU ,  BIN WANG ,  CHENG-BIN SU ,  JIAN-LONG XING ,  GA-LEI HU

    IPC: B21D7/02

    CPC classification number: H01R43/16

    Abstract: An exemplary pin bending device (200) includes a base (210), a sliding member (230), a fixing member (240), and a latch member (250). The sliding member (230) is slidably positioned on the base and defines a plurality of holes (2303) for receiving first portions of pins. The fixing member is fixed on the base. The latch member is movably positioned on the base. The latch member is able to move towards the fixing member in a direction perpendicular to the sliding direction of the sliding member and engage with the fixing member to fix second portions of the pins.

    Abstract translation: 示例性的销弯曲装置（200）包括基座（210），滑动构件（230），固定构件（240）和闩锁构件（250）。 滑动构件（230）可滑动地定位在基座上并且限定用于接收销的第一部分的多个孔（2303）。 固定构件固定在基座上。 闩锁构件可移动地定位在基座上。 闩锁构件能够沿着与滑动构件的滑动方向垂直的方向朝向固定构件移动，并与固定构件接合以固定销的第二部分。

    Serial/Parallel data conversion apparatus and method thereof
    395.
    发明申请
    Serial/Parallel data conversion apparatus and method thereof 有权
    串并行数据转换装置及其方法

    公开(公告)号：US20090167572A1

    公开(公告)日：2009-07-02

    申请号：US12230188

    申请日：2008-08-26

    Applicant: Ching Yen Chang ,  Wen-Bin Wang

    Inventor： Ching Yen Chang ,  Wen-Bin Wang

    IPC: H03M9/00

    CPC classification number: H03M9/00

    Abstract: A serial/parallel data conversion apparatus and a method thereof are used to convert serial data into parallel data by a delay pulse and three stage registers, wherein the device includes a first data register, a second data register, a third data register, a frequency divider and a delay controller. Moreover, the first data register converts the serial data into the parallel data according to a first working clock signal. The frequency divider performs a frequency division for the first working clock signal for producing a second working clock signal. The second data register acquires the parallel data from the first register according to the second working clock signal. The delay controller delays the second working clock signal to produce a third working clock signal. Finally, the third data register obtains the parallel data from the second register according to the third working clock signal.

    Abstract translation: 串行/并行数据转换装置及其方法用于通过延迟脉冲和三级寄存器将串行数据转换为并行数据，其中该装置包括第一数据寄存器，第二数据寄存器，第三数据寄存器，频率 分频器和延迟控制器。 此外，第一数据寄存器根据第一工作时钟信号将串行数据转换成并行数据。 分频器对第一工作时钟信号进行分频以产生第二工作时钟信号。 第二数据寄存器根据第二工作时钟信号从第一寄存器获取并行数据。 延迟控制器延迟第二工作时钟信号以产生第三工作时钟信号。 最后，第三数据寄存器根据第三工作时钟信号从第二寄存器获得并行数据。

    Connector and Power Transformer Structure Comprising the Same
    397.
    发明申请
    Connector and Power Transformer Structure Comprising the Same 有权
    连接器和电力变压器结构组成

    公开(公告)号：US20090085702A1

    公开(公告)日：2009-04-02

    申请号：US12029081

    申请日：2008-02-11

    Applicant: Jianhong Zeng ,  Bin Wang ,  Hongyang Wu ,  Jianping Ying

    Inventor： Jianhong Zeng ,  Bin Wang ,  Hongyang Wu ,  Jianping Ying

    IPC: H01F27/40

    CPC classification number: H01F27/38 ,  H01F17/0013 ,  H01F27/292 ,  H01F2027/2819

    Abstract: A connector and a power transformer structure comprising the same are provided. The power transformer structure comprises a connector and an integrated transformer. The connector comprises a plurality of connection units, and the integrated transformer comprises a plurality of transformation units. The transformation units are sequentially stacked and electronically connected to the corresponding connection units in contact connection to reduce the current conduction consumption and contact resistance.

    Abstract translation: 提供一种连接器和包括该连接器的电力变压器结构。 电力变压器结构包括连接器和集成变压器。 连接器包括多个连接单元，并且该集成变压器包括多个变换单元。 转换单元依次堆叠并且以相互连接的方式电连接到相应的连接单元以减小电流传导消耗和接触电阻。

    Estimating Word Correlations from Images
    398.
    发明申请
    Estimating Word Correlations from Images 有权
    估计图像中的词相关性

    公开(公告)号：US20090074306A1

    公开(公告)日：2009-03-19

    申请号：US11956333

    申请日：2007-12-13

    Applicant: Jing Liu ,  Bin Wang ,  Zhiwei Li ,  Mingjing Li ,  Wei-Ying Ma

    Inventor： Jing Liu ,  Bin Wang ,  Zhiwei Li ,  Mingjing Li ,  Wei-Ying Ma

    IPC: G06K9/72

    CPC classification number: G06F17/30247 ,  G06F17/30731

    Abstract: Word correlations are estimated using a content-based method, which uses visual features of image representations of the words. The image representations of the subject words may be generated by retrieving images from data sources (such as the Internet) using image search with the subject words as query words. One aspect of the techniques is based on calculating the visual distance or visual similarity between the sets of retrieved images corresponding to each query word. The other is based on calculating the visual consistence among the set of the retrieved images corresponding to a conjunctive query word. The combination of the content-based method and a text-based method may produce even better result.

    Abstract translation: 使用基于内容的方法来估计词相关性，其使用词的图像表示的视觉特征。 可以通过使用将主题词作为查询词的图像搜索从数据源（例如因特网）检索图像来生成主题词的图像表示。 该技术的一个方面是基于计算对应于每个查询词的检索图像组之间的视觉距离或视觉相似度。 另一个是基于计算与连接查询词对应的检索到的图像的集合之间的视觉一致性。 基于内容的方法和基于文本的方法的组合可以产生更好的结果。

    Multi-level non-volatile memory cell with high-VT enhanced BTBT device
    399.
    发明申请
    Multi-level non-volatile memory cell with high-VT enhanced BTBT device 有权
    具有高VT增强BTBT器件的多级非易失性存储单元

    公开(公告)号：US20080279013A1

    公开(公告)日：2008-11-13

    申请号：US12080127

    申请日：2008-03-31

    Applicant: Andrew H. Horch ,  Bin Wang

    Inventor： Andrew H. Horch ,  Bin Wang

    IPC: G11C16/06

    CPC classification number: G11C16/0441

    Abstract: The present disclosure provides a Non-Volatile Memory (NVM) cell and programming method thereof. The cell can denote at least two logic levels. The cell has a read-transistor with a floating gate, and Band-To-Band-Tunneling device (BTBT device) sharing the floating gate with the read-transistor. The BTBT device is configured as an injection device for injecting a first charge onto the floating gate when the BTBT device is biased with a first gate bias voltage such that the BTBT device is in accumulation, to set at least one of the logic levels. A first electrode is coupled to bias the BTBT device with a first bias voltage that is higher than the first threshold voltage. The first bias voltage is controlled such that the BTBT device is in accumulation during a write operation. The injected amount of charge on the floating gate is determined by the first bias voltage.

    Abstract translation: 本公开提供了一种非易失性存储器（NVM）单元及其编程方法。 该单元可以表示至少两个逻辑电平。 该单元具有带有浮动栅极的读晶体管，以及与读晶体管共享浮置栅极的带对带隧穿装置（BTBT器件）。 BTBT器件被配置为当BTBT器件被偏置有第一栅极偏置电压以使得BTBT器件处于积累状态时将第一电荷注入浮置栅极上的注入器件，以设置至少一个逻辑电平。 第一电极被耦合以利用高于第一阈值电压的第一偏压来偏置BTBT器件。 控制第一偏置电压，使得BTBT器件在写入操作期间处于积累状态。 浮置栅极上的注入量由第一偏置电压决定。

    Selectively Absorptive Wire-Grid Polarizer
    400.
    发明申请
    Selectively Absorptive Wire-Grid Polarizer 有权
    选择性吸收线栅偏振器

    公开(公告)号：US20080278811A1

    公开(公告)日：2008-11-13

    申请号：US11767353

    申请日：2007-06-22

    Applicant: Raymond T. Perkins ,  Mark A. Davis ,  Bin Wang ,  Eric W. Gardner

    Inventor： Raymond T. Perkins ,  Mark A. Davis ,  Bin Wang ,  Eric W. Gardner

    IPC: G02B5/30 ,  G02B1/08

    CPC classification number: G02B5/3058

    Abstract: A selectively absorptive, mulitlayer wire-grid polarizer for polarizing incident light includes a stack of thin film layers disposed over a substrate, including a wire-grid array of elongated metal elements having a period less than half the wavelength of the light. One of the layers can include a thin film layer with a refractive index greater than a refractive index of the substrate. One of the thin film layers can include a dielectric array of non-metal elements. One of the layers includes a material that is optically absorptive to the incident light.

    Abstract translation: 用于偏振入射光的选择性吸收多层线栅偏振器包括设置在衬底上的薄层层叠，包括具有小于光的一半波长的周期的细长金属元素的线栅阵列。 层中的一个可以包括折射率大于衬底的折射率的薄膜层。 薄膜层之一可以包括非金属元素的电介质阵列。 其中一层包括光学吸收入射光的材料。

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