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    High brightness light-emitting device and manufacturing process of the light-emitting device
    2.
    发明申请
    High brightness light-emitting device and manufacturing process of the light-emitting device 审中-公开
    高亮度发光装置及制造工艺的发光装置

    公开(公告)号：US20070012930A1

    公开(公告)日：2007-01-18

    申请号：US11524869

    申请日：2006-09-21

    Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

    Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

    IPC: H01L33/00 ,  H01L31/12 ,  H01L27/15 ,  H01L29/26

    CPC classification number: H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/05099

    Abstract: A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure. One electrode pad is formed through the opening of the reflector layer and the passivation layer to connect with the multi-layer structure

    Abstract translation: 发光装置包括多层结构，其包括响应于电信号的施加而被配置为照射光的一个或多个有源层，布置在多层堆叠的最外表面上的透明钝化层，反射层 铺设在钝化层上，以及与多层结构耦合的多个电极焊盘。 在发光器件的制造工艺中，对反射层和钝化层进行构图以形成暴露多层结构区域的至少一个开口。 一个电极焊盘通过反射层的开口和钝化层形成，以与多层结构连接

    Manufacturing process of light-emitting device
    3.
    发明申请
    Manufacturing process of light-emitting device 审中-公开
    发光装置的制造工艺

    公开(公告)号：US20060121642A1

    公开(公告)日：2006-06-08

    申请号：US11339342

    申请日：2006-01-25

    Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

    Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

    IPC: H01L21/00

    CPC classification number: H01L33/508 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

    Abstract: A light-emitting device includes a multi-layer structure configured to emit a first light radiation, and a cap layer covering a surface area of the multi-layer structure while leaving exposed electrode areas defined thereon, wherein the cap layer is made of a material capable of emitting at least one second light radiation when stimulated by the first light radiation. The cap layer, being made of a material blend incorporating a passivation material and a luminescent material compound, is coated on the multi-layer structure.

    Abstract translation: 发光器件包括被配置为发射第一光辐射的多层结构，以及覆盖多层结构的表面区域同时留下限定在其上的暴露的电极区域的覆盖层，其中，盖层由材料制成 能够在被第一光辐射刺激时发射至少一个第二光辐射。 覆盖层由包含钝化材料和发光材料化合物的材料混合物制成，涂覆在多层结构上。

    Method for self bonding epitaxy
    4.
    发明授权
    Method for self bonding epitaxy 有权
    自身结合外延的方法

    公开(公告)号：US07645624B2

    公开(公告)日：2010-01-12

    申请号：US11980472

    申请日：2007-10-31

    Applicant: Yu-Chuan Liu ,  Hung-Cheng Lin ,  Wen-Chieh Hsu ,  Chia-Ming Lee ,  Jenn-Hwa Fu

    Inventor： Yu-Chuan Liu ,  Hung-Cheng Lin ,  Wen-Chieh Hsu ,  Chia-Ming Lee ,  Jenn-Hwa Fu

    IPC: H01L21/00 ,  H01L21/76

    CPC classification number: H01L33/22 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

    Abstract: A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.

    Abstract translation: 一种用于自粘合外延的方法包括在半导体照明元件的衬底表面上形成钝化层; 蚀刻以形成具有位于其上的钝化层的凹部和突出部分; 开始在凹槽的底表面上形成外延; 用Epi层填充凹槽; 然后覆盖突起部分并开始自身向上附着外延以完成Epi层结构。 这种自粘合外延生长技术可以防止由外延参数误差引起的空腔产生并降低缺陷密度，提高Epi层的质量并提高内部量子效率。

    Method for self bonding epitaxy
    6.
    发明申请
    Method for self bonding epitaxy 有权
    自身结合外延的方法

    公开(公告)号：US20090111202A1

    公开(公告)日：2009-04-30

    申请号：US11980472

    申请日：2007-10-31

    Applicant: Yu-Chuan Liu ,  Hung-Cheng Lin ,  Wen-Chieh Hsu ,  Chia-Ming Lee ,  Jenn-Hwa Fu

    Inventor： Yu-Chuan Liu ,  Hung-Cheng Lin ,  Wen-Chieh Hsu ,  Chia-Ming Lee ,  Jenn-Hwa Fu

    IPC: H01L33/00

    CPC classification number: H01L33/22 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

    Abstract: A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.

    Abstract translation: 一种用于自粘合外延的方法包括在半导体照明元件的衬底表面上形成钝化层; 蚀刻以形成具有位于其上的钝化层的凹部和突出部分; 开始在凹槽的底表面上形成外延; 用Epi层填充凹槽; 然后覆盖突起部分并开始自身向上附着外延以完成Epi层结构。 这种自粘合外延生长技术可以防止由外延参数误差引起的空腔产生并降低缺陷密度，提高Epi层的质量并提高内部量子效率。

    Light-emitting device and manufacturing process of the light-emitting device
    7.
    发明申请
    Light-emitting device and manufacturing process of the light-emitting device 有权
    发光装置和发光装置的制造工艺

    公开(公告)号：US20050224813A1

    公开(公告)日：2005-10-13

    申请号：US10815091

    申请日：2004-03-31

    Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

    Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

    IPC: B41J2/12 ,  H01L25/075 ,  H01L33/50

    CPC classification number: H01L33/507 ,  H01L25/0756 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A light-emitting device comprises a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.

    Abstract translation: 发光装置包括：发光单元，包括多个第一连接焊盘;基板，包括多个第二连接焊盘;以及多个导电凸块，其将所述发光单元的第一连接焊盘连接到 基底基板的第二连接焊盘。 在制造过程中，执行回流处理以将导电凸块接合到第一和第二连接焊盘。 发光单元被配置为在施加电流时发射第一光辐射，并且基底基板被配置为当被第一光辐射刺激时发射第二光辐射。

    Method for treating magnesium alloy by chemical conversion
    9.
    发明授权
    Method for treating magnesium alloy by chemical conversion 失效
    通过化学转化处理镁合金的方法

    公开(公告)号：US06755918B2

    公开(公告)日：2004-06-29

    申请号：US10167479

    申请日：2002-06-13

    Applicant: Ming-Der Ger ,  Kuang-Hsuan Yang ,  Yuh Sung ,  Wen-Hwa Hwu ,  Yu-Chuan Liu

    Inventor： Ming-Der Ger ,  Kuang-Hsuan Yang ,  Yuh Sung ,  Wen-Hwa Hwu ,  Yu-Chuan Liu

    IPC: C23C2200

    CPC classification number: C23C22/12 ,  C23C22/40 ,  C23C22/68 ,  C23C22/78 ,  C23C22/83

    Abstract: The present invention discloses a method for treating magnesium alloys by chemical conversion. This method can improve corrosion resistance and paint adhesion of magnesium alloys, and produces an admirable appearance. Additionally, the method of the present invention is more environmentally friendly than conventional processes, because non-chromate chemicals are used in acid pickling and chemical conversion. Furthermore, the method of the present invention can be widely applied to the magnesium alloys manufactured by casting and rolling.

    Abstract translation: 本发明公开了一种通过化学转化处理镁合金的方法。 该方法可以提高镁合金的耐腐蚀性和涂料附着力，并产生令人羡慕的外观。 此外，本发明的方法比常规方法更环保，因为在酸洗和化学转化中使用非铬酸盐化学品。 此外，本发明的方法可以广泛地应用于通过铸造和轧制制造的镁合金。

    METHOD FOR FABRICATING LIGHT EMITTING DIODE ELEMENT
    10.
    发明申请
    METHOD FOR FABRICATING LIGHT EMITTING DIODE ELEMENT 有权
    用于制造发光二极管元件的方法

    公开(公告)号：US20090162959A1

    公开(公告)日：2009-06-25

    申请号：US11963580

    申请日：2007-12-21

    Applicant: Wen-Chieh HSU ,  Yu-Chuan Liu ,  Jenn-Hwa Fu ,  Shih-Hung Lee ,  Tai-Chun Wang

    Inventor： Wen-Chieh HSU ,  Yu-Chuan Liu ,  Jenn-Hwa Fu ,  Shih-Hung Lee ,  Tai-Chun Wang

    IPC: H01L33/00

    CPC classification number: H01L33/20 ,  H01L33/0095 ,  H01L33/22 ,  Y10S438/945

    Abstract: The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and form side-protrudent structures, whereby the LED epitaxial layers have non-rectangular inclines, which can solve the problem of total reflection and promote light-extraction efficiency. Further, the method of the present invention has a simple fabrication process, which can benefit mass production and lower cost.

    Abstract translation: 本发明公开了一种用于制造发光二极管元件的方法，该方法结合了外延工艺和蚀刻工艺，以便从底部向下蚀刻LED外延层并形成侧突出结构，由此LED外延层具有非矩形倾斜， 解决全反射问题，提高光提取效率。 此外，本发明的方法具有简单的制造工艺，其可以有益于批量生产和降低成本。

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