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    Method for manufacture of ceftiofur
    442.
    发明授权
    Method for manufacture of ceftiofur 失效
    头孢噻呋的制造方法

    公开(公告)号：US07511135B2

    公开(公告)日：2009-03-31

    申请号：US10532194

    申请日：2003-10-27

    Applicant: Om Dutt Tyagi ,  Santosh Kumar Richhariya ,  Rajesh Kumar Ramchandra Pawar ,  Yuvaraj Atmaram Chavan

    Inventor： Om Dutt Tyagi ,  Santosh Kumar Richhariya ,  Rajesh Kumar Ramchandra Pawar ,  Yuvaraj Atmaram Chavan

    IPC: C07D501/36

    CPC classification number: C07D417/14

    Abstract: A process for preparation of ceftiofur of formula (I) having purity greater than 97% is disclosed. The process comprises reacting [2-(2-aminothiazol-4-yl)]-2-syn-methoxyimino acetic acid-2-benzothiazolyl thioester of formula (II), with 7-amino-3-(2-furanylcarbonylthiomethyl)-3-cephem-4-carboxylic acid of formula (III) in the presence of a mixture of an water-immiscible inert organic solvent and water and in the presence of a organic base and isolating ceftiofur of formula (I) substantially free of impurities by, a) adding water to the reaction mixture and selectively partitioning the impurities in the organic phase and ceftiofur (I) in the form of a salt with the base in the aqueous phase, b) acidifying the aqueous phase containing ceftiofur (I) in the form of a salt with the base in the presence of a mixture containing a water-miscible and a water-immiscible organic solvent and in the presence of a saturated aqueous solution of an alkali or alkaline earth containing salt, to partition ceftiofur (I) in the organic phase, and c) isolating ceftiofur (I) of high purity and substantially free of impurities by evaporation of the organic solvent or precipitation by addition of a anti-solvent.

    Abstract translation: 公开了制备具有大于97％纯度的式（I）头孢噻呋的方法。 该方法包括使式（II）的[2-（2-氨基噻唑-4-基）] - 2-顺式 - 甲氧基亚氨基乙酸-2-苯并噻唑基硫代酯与7-氨基-3-（2-呋喃基羰硫基甲基）-3 （III）的头孢-4-羧酸在水不混溶的惰性有机溶剂和水的混合物存在下，在有机碱的存在下，分离式（I）的头孢噻呋基本上不含杂质， a）向反应混合物中加入水，并在水相中选择性地分配有机相中的杂质和与碱的盐形式的头孢噻呋（I），b）以含有头孢噻呋（I）的形式酸化含有头孢噻呋 在含有水混溶性和与水不混溶的有机溶剂的混合物存在下，在含有碱或碱土金属盐的饱和水溶液的存在下，将碱与碱反应，从而将头孢噻吩（I） 有机相，和c）分离高纯度和实质的头孢噻呋（I） 通过蒸发有机溶剂或通过加入抗溶剂沉淀而不含杂质。

    Process for Producing Pure Form of 2-Methyl-4-(4-Methyl-1-Piperazinyl)-10H-Thieno[2,3-b] [1,5]Benzodiazepine
    444.
    发明申请
    Process for Producing Pure Form of 2-Methyl-4-(4-Methyl-1-Piperazinyl)-10H-Thieno[2,3-b] [1,5]Benzodiazepine 失效
    制备2-甲基-4-（4-甲基-1-哌嗪基）-10H-噻吩并[2,3-b] [1,5]苯并二氮杂

    公开(公告)号：US20090005556A1

    公开(公告)日：2009-01-01

    申请号：US11632362

    申请日：2004-07-14

    Applicant: Jwalant Ashesh Shastri ,  Akshat Bhatnagar ,  Rajesh Kumar Thaper ,  Sushil Kumar Dubey

    Inventor： Jwalant Ashesh Shastri ,  Akshat Bhatnagar ,  Rajesh Kumar Thaper ,  Sushil Kumar Dubey

    IPC: C07D487/04

    CPC classification number: C07D495/04 ,  C07D243/10 ,  C07D333/38

    Abstract: Disclosed is a process for producing pure form of 2-methyl-4-(4-methyl-1-piperazinyl)-10H-thieno[2,3-b][1,5] benzodiazepine. The process comprises of reacting 2-(2-aminoanilino)-5-methylthiophene-3-carbonitrile with N-methyl piperazine in conjunction with N-methylpiperazine acid salt, to produce 2-methyl-4-(4-methyl-1-piperazinyl)-10H-thieno[2,3-b][1,5] benzodiazepine. Also disclosed is a process for obtaining the Polymorphic Form I of 2-methyl-4-(4-methyl-1-piperazinyl)-10H-thieno[2,3-b][1,5] benzodiazepine by crystallizing the crude 2-methyl-4-(4-methyl-1-piperazinyl)-10H-thieno[2,3-b][1,5] benzodiazepine in a mixture of solvents.

    Abstract translation: 公开了一种生产纯形式的2-甲基-4-（4-甲基-1-哌嗪基）-10H-噻吩并[2,3-b] [1,5]苯并二氮杂的方法。 该方法包括使2-（2-氨基苯胺基）-5-甲基噻吩-3-腈与N-甲基哌嗪与N-甲基哌嗪酸盐一起反应，得到2-甲基-4-（4-甲基-1-哌嗪基 ）-10H-噻吩并[2,3-b] [1,5]苯并二氮杂。 还公开了2-甲基-4-（4-甲基-1-哌嗪基）-10H-噻吩并[2,3-b] [1,5]苯并二氮杂的多晶型I的方法， 甲基-4-（4-甲基-1-哌嗪基）-10H-噻吩并[2,3-b] [1,5]苯并二氮杂在溶剂混合物中。

    MACROSCOPIC ORDERED ASSEMBLY OF CARBON NANOTUBES
    447.
    发明申请
    MACROSCOPIC ORDERED ASSEMBLY OF CARBON NANOTUBES 审中-公开
    碳纳米管的大型订购总成

    公开(公告)号：US20080210370A1

    公开(公告)日：2008-09-04

    申请号：US11840033

    申请日：2007-08-16

    Applicant: Richard E. Smalley ,  Daniel T. Colbert ,  Ken A. Smith ,  Deron A. Walters ,  Michael J. Casavant ,  Chad B. Huffman ,  Boris I. Yakobson ,  Robert H. Hauge ,  Rajesh Kumar Saini ,  Wan-Ting Chiang ,  Xiao Chuan Qin

    Inventor： Richard E. Smalley ,  Daniel T. Colbert ,  Ken A. Smith ,  Deron A. Walters ,  Michael J. Casavant ,  Chad B. Huffman ,  Boris I. Yakobson ,  Robert H. Hauge ,  Rajesh Kumar Saini ,  Wan-Ting Chiang ,  Xiao Chuan Qin

    IPC: C01B31/02 ,  B32B37/00 ,  B05D3/00 ,  B01J19/00 ,  B03C1/32

    CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  C01B32/168 ,  C01B2202/02 ,  C01B2202/08 ,  H01J2201/30469 ,  Y10S977/75 ,  Y10S977/845 ,  Y10S977/847 ,  Y10T156/10

    Abstract: The present invention is directed to the creation of macroscopic materials and objects comprising aligned nanotube segments. The invention entails aligning single-wall carbon nanotube (SWNT) segments that are suspended in a fluid medium and then removing the aligned segments from suspension in a way that macroscopic, ordered assemblies of SWNT are formed. The invention is further directed to controlling the natural proclivity or nanotube segments to self assemble into or ordered structures by modifying the environment of the nanotubes and the history of that environment prior to and during the process. The materials and objects are “macroscopic” in that they are large enough to be seen without the aid of a microscope or of the dimensions of such objects. These macroscopic ordered SWNT materials and objects have the remarkable physical, electrical, and chemical properties that SWNT exhibit on the microscopic scale because they are comprised of nanotubes, each of which is aligned in the same direction and in contact with its nearest neighbors. An ordered assembly of closest SWNT also serves as a template for growth of more and larger ordered assemblies. An ordered assembly further serves as a foundation for post processing treatments that modify the assembly internally to specifically enhance selected material properties such as shear strength, tensile strength, compressive strength, toughness, electrical conductivity, and thermal conductivity.

    Abstract translation: 本发明涉及包括对准的纳米管段的宏观材料和物体的产生。 本发明需要将悬浮在流体介质中的单壁碳纳米管（SWNT）段对准，然后以形成SWNT的宏观有序组件的方式从悬浮液中除去对准的段。 本发明进一步涉及通过在工艺之前和期间修改纳米管的环境和该环境的历史来控制天然倾向或纳米管段自组装成或有序的结构。 材料和物体是“宏观的”，因为它们足够大以便在没有显微镜或这些物体的尺寸的情况下被看到。 这些宏观有序的SWNT材料和物体具有卓越的物理，电学和化学性质，SWNT在微观尺度上显示，因为它们由纳米管组成，其中每个纳米管沿相同方向对齐并与其最近的邻近物接触。 最近的SWNT的有序组件也可以作为增加更多和更大订单组件的模板。 订购的组件还用作后处理处理的基础，其在内部改变组件以特异性地增强选定的材料性能，例如剪切强度，抗拉强度，抗压强度，韧性，导电性和导热性。

    Silicon carbide semiconductor device and method for manufacturing the same
    448.
    发明授权
    Silicon carbide semiconductor device and method for manufacturing the same 有权
    碳化硅半导体器件及其制造方法

    公开(公告)号：US07399676B2

    公开(公告)日：2008-07-15

    申请号：US11268612

    申请日：2005-11-08

    Applicant: Malhan Rajesh Kumar ,  Yuichi Takeuchi

    Inventor： Malhan Rajesh Kumar ,  Yuichi Takeuchi

    IPC: H01L21/336 ,  H01L21/8242

    CPC classification number: H01L29/7811 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/7828

    Abstract: A method for manufacturing a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate and first to third semiconductor layers; forming a trench in a cell region of the semiconductor substrate; forming a fourth semiconductor layer in the trench; forming an oxide film in the trench such that a part of the fourth semiconductor layer on a sidewall of the trench is thermally oxidized; forming a gate electrode on the oxide film in the trench; forming a first electrode electrically connecting to the third semiconductor layer; and forming a first electrode electrically connecting to the silicon carbide substrate.

    Abstract translation: 一种制造碳化硅半导体器件的方法包括以下步骤：制备包括碳化硅衬底和第一至第三半导体层的半导体衬底; 在所述半导体衬底的单元区域中形成沟槽; 在沟槽中形成第四半导体层; 在沟槽中形成氧化膜，使得沟槽侧壁上的第四半导体层的一部分被热氧化; 在沟槽中的氧化膜上形成栅电极; 形成电连接到所述第三半导体层的第一电极; 以及形成电连接到所述碳化硅衬底的第一电极。

    Silicon carbide semiconductor device and method for manufacturing the same
    450.
    发明授权
    Silicon carbide semiconductor device and method for manufacturing the same 有权
    碳化硅半导体器件及其制造方法

    公开(公告)号：US07355207B2

    公开(公告)日：2008-04-08

    申请号：US11135661

    申请日：2005-05-24

    Applicant: Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Hiroki Nakamura ,  Toshiyuki Morishita ,  Takasumi Ohyanagi ,  Atsuo Watanabe

    Inventor： Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Hiroki Nakamura ,  Toshiyuki Morishita ,  Takasumi Ohyanagi ,  Atsuo Watanabe

    IPC: H01L29/15 ,  H01L31/0312

    CPC classification number: H01L29/1608 ,  H01L27/098 ,  H01L29/0619 ,  H01L29/66068 ,  H01L29/8083

    Abstract: A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.

    Abstract translation: 碳化硅半导体器件的制造方法包括以下步骤：制备包括碳化硅衬底，漂移层和第一半导体层的半导体衬底; 在单元部分中形成多个第一沟槽; 通过外延生长法在每个第一沟槽的内壁上形成栅极层; 在所述半导体衬底的表面上形成第一绝缘膜; 在所述第一绝缘膜上形成用于电连接到所述栅极层的栅电极; 在所述第一绝缘膜上形成用于连接到所述单元部分中的所述第一半导体层的源电极; 以及电连接到所述碳化硅衬底的漏电极。

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