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公开(公告)号：US20200381618A1
公开(公告)日：2020-12-03
申请号：US16883190
申请日：2020-05-26
Applicant: STMicroelectronics S.r.l.
Inventor： Paolo Giuseppe CAPPELLETTI
Abstract: A phase-change memory cell is formed by a heater, a crystalline layer disposed above the heater, and an insulating region surrounding sidewalls of the crystalline layer. The phase-change memory cell supports programming with a least three distinct data levels based on a selective amorphization of the crystalline layer.
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公开(公告)号：US20200381072A1
公开(公告)日：2020-12-03
申请号：US16870757
申请日：2020-05-08
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Luca SASSELLI
Abstract: A device includes serial cyclic redundancy check (CRC) processing circuitry and parallel CRC processing circuitry. The serial CRS processing circuitry, in operation, generates a set of intermediate CRC bits based on a first set of seed bits and input data. The parallel CRC processing circuitry is coupled to the serial CRC processing circuitry, and, in operation, generates, using the set of intermediate CRC bits as a set of parallel seed bits and using null input bits, a set of output CRC bits corresponding to the input data.
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公开(公告)号：US10852263B2
公开(公告)日：2020-12-01
申请号：US16167165
申请日：2018-10-22
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Salvatore Cascino , Antonello Santangelo
Abstract: A micro-heater element for a MEMS sensor device, envisages, in a single conductive layer: an outer ring, defining inside it a window; a heat-diffusion structure, arranged within the window, separated from the outer ring by a first separation gap; and connection elements, arranged between the heat-diffusion structure and the outer ring, and designed to connect the heat-diffusion structure to the outer ring. The outer ring is designed to dissipate energy upon passage of an electric current, and the heat-diffusion structure is designed to distribute, within the micro-heater element, the heat that is transferred by the outer ring through the connection elements.
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公开(公告)号：US20200373398A1
公开(公告)日：2020-11-26
申请号：US16882293
申请日：2020-05-22
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Patrick FIORENZA , Fabrizio ROCCAFORTE , Mario Giuseppe SAGGIO
IPC: H01L29/423 , H01L29/872 , H01L29/16 , H01L27/06
Abstract: An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.
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465.发明申请公开(公告)号：US20200371376A1
公开(公告)日：2020-11-26
申请号：US16880141
申请日：2020-05-21
Applicant: STMicroelectronics S.r.l.
Inventor： Domenico GIUSTI , Dario PACI
Abstract: A MEMS actuator includes a monolithic body of semiconductor material, with a supporting portion of semiconductor material, orientable with respect to a first and second rotation axes, transverse to each other. A first frame of semiconductor material is coupled to the supporting portion through first deformable elements configured to control a rotation of the supporting portion about the first rotation axis. A second frame of semiconductor material is coupled to the first frame by second deformable elements, which are coupled between the first and the second frames and configured to control a rotation of the supporting portion about the second rotation axis. The first and second deformable elements carry respective piezoelectric actuation elements.
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Patent Agency Ranking
公开(公告)号：US20200350877A1
公开(公告)日：2020-11-05
申请号：US16935649
申请日：2020-07-22
Applicant: STMicroelectronics S.r.l.
Inventor： Edoardo Botti , Tommaso Barbieri , Davide Luigi Brambilla , Cristiano Meroni
IPC: H03F3/217 , H03K17/687 , H03K3/017 , H04R3/00 , G05F1/575 , H03F1/02 , H02M3/158 , H02M3/00 , H03F3/187
Abstract: An integrated circuit includes a die that includes a circuit configured to generate a PWM signal in response to a first clock signal, and a first set of pads configured to provide amplified PWM signals to external filters. An amplifier stage is configured to provide the amplified PWM signals. The die includes two pads configured to be coupled to an external inductor, and a second set of pads configured to provide regulated voltages. An electronic converter circuit is configured to generate the regulated voltages to supply the amplifier stage. The electronic converter circuit includes a control circuit configured to drive electronic switches in response to a second clock signal to regulate the regulated voltages to a respective target value. The die includes a control block to synchronize the switching activity of the electronic switches with the switching activity of the amplifier stage.
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公开(公告)号：US10826268B1
公开(公告)日：2020-11-03
申请号：US16454717
申请日：2019-06-27
Applicant: STMicroelectronics S.r.l. , Politecnico Di Milano
Inventor： Marco Zamprogno , Alireza Tajfar
Abstract: A circuit includes a capacitance coupled between a high voltage node and ground, a laser diode having an anode coupled to the high voltage node and a cathode coupled to an output node, and a current source coupled between the output node and ground. The current source turns on based on assertion of a trigger signal and sinks current from the capacitance to ground to thereby cause the laser diode to lase, and turns off based on deassertion of the trigger signal. A clamping circuit is coupled between the output node and the high voltage node, and clamps voltage at the output node occurring when the current source switches off.
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公开(公告)号：US10825954B2
公开(公告)日：2020-11-03
申请号：US15983959
申请日：2018-05-18
Applicant: STMicroelectronics S.r.l.
Inventor： Marco Morelli , Fabrizio Fausto Renzo Toia , Giuseppe Barillaro , Marco Sambi
Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.
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公开(公告)号：US20200341836A1
公开(公告)日：2020-10-29
申请号：US16928768
申请日：2020-07-14
Inventor： Roberto Colombo , Nicolas Bernard Grossier , Roberta Vittimani
Abstract: In some embodiments, a processing system includes at least one hardware block configured to change operation as a function of configuration data, a non-volatile memory including the configuration data for the at least one hardware block, and a configuration module configured to read the configuration data from the non-volatile memory and provide the configuration data read from the non-volatile memory to the at least one hardware block. The configuration module is configured to: receive mode configuration data; read the configuration data from the non-volatile memory; test whether the configuration data contain errors by verifying whether the configuration data are corrupted and/or invalid; and activate a normal operation mode or an error operation mode based on whether the configuration data contain or do not contain errors.
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公开(公告)号：US10818578B2
公开(公告)日：2020-10-27
申请号：US16151748
申请日：2018-10-04
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Michele Derai , Federico Giovanni Ziglioli
IPC: H01L23/495 , H01L23/31 , H01L23/00 , H01L21/56
Abstract: A method of manufacturing semiconductor devices such as integrated circuits comprises: providing one or more semiconductor chips having first and second opposed surfaces, coupling the semiconductor chip or chips with a support substrate with the second surface towards the support substrate, embedding the semiconductor chip or chips coupled with the support substrate in electrically-insulating packaging material by providing in the packaging material electrically-conductive passageways. The electrically-conductive passageways comprise: electrically-conductive chip passageways towards the first surface of the at least one semiconductor chip, and/or electrically-conductive substrate passageways towards the support substrate.
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