PIEZOELECTRIC MEMS ACTUATOR FOR COMPENSATING UNWANTED MOVEMENTS AND MANUFACTURING PROCESS THEREOF

    公开(公告)号:US20200371376A1

    公开(公告)日:2020-11-26

    申请号:US16880141

    申请日:2020-05-21

    Abstract: A MEMS actuator includes a monolithic body of semiconductor material, with a supporting portion of semiconductor material, orientable with respect to a first and second rotation axes, transverse to each other. A first frame of semiconductor material is coupled to the supporting portion through first deformable elements configured to control a rotation of the supporting portion about the first rotation axis. A second frame of semiconductor material is coupled to the first frame by second deformable elements, which are coupled between the first and the second frames and configured to control a rotation of the supporting portion about the second rotation axis. The first and second deformable elements carry respective piezoelectric actuation elements.

    INTEGRATED CIRCUIT AND RELATED AUDIO AMPLIFIER
    462.
    发明申请

    公开(公告)号:US20200350877A1

    公开(公告)日:2020-11-05

    申请号:US16935649

    申请日:2020-07-22

    Abstract: An integrated circuit includes a die that includes a circuit configured to generate a PWM signal in response to a first clock signal, and a first set of pads configured to provide amplified PWM signals to external filters. An amplifier stage is configured to provide the amplified PWM signals. The die includes two pads configured to be coupled to an external inductor, and a second set of pads configured to provide regulated voltages. An electronic converter circuit is configured to generate the regulated voltages to supply the amplifier stage. The electronic converter circuit includes a control circuit configured to drive electronic switches in response to a second clock signal to regulate the regulated voltages to a respective target value. The die includes a control block to synchronize the switching activity of the electronic switches with the switching activity of the amplifier stage.

    Laser driver incorporating clamping circuit with freewheeling diode

    公开(公告)号:US10826268B1

    公开(公告)日:2020-11-03

    申请号:US16454717

    申请日:2019-06-27

    Abstract: A circuit includes a capacitance coupled between a high voltage node and ground, a laser diode having an anode coupled to the high voltage node and a cathode coupled to an output node, and a current source coupled between the output node and ground. The current source turns on based on assertion of a trigger signal and sinks current from the capacitance to ground to thereby cause the laser diode to lase, and turns off based on deassertion of the trigger signal. A clamping circuit is coupled between the output node and the high voltage node, and clamps voltage at the output node occurring when the current source switches off.

    Porous-silicon light-emitting device and manufacturing method thereof

    公开(公告)号:US10825954B2

    公开(公告)日:2020-11-03

    申请号:US15983959

    申请日:2018-05-18

    Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

    Method of manufacturing semiconductor devices, corresponding device and circuit

    公开(公告)号:US10818578B2

    公开(公告)日:2020-10-27

    申请号:US16151748

    申请日:2018-10-04

    Abstract: A method of manufacturing semiconductor devices such as integrated circuits comprises: providing one or more semiconductor chips having first and second opposed surfaces, coupling the semiconductor chip or chips with a support substrate with the second surface towards the support substrate, embedding the semiconductor chip or chips coupled with the support substrate in electrically-insulating packaging material by providing in the packaging material electrically-conductive passageways. The electrically-conductive passageways comprise: electrically-conductive chip passageways towards the first surface of the at least one semiconductor chip, and/or electrically-conductive substrate passageways towards the support substrate.

    CONTROL METHOD AND SYSTEM FOR PREVENTION OF CURRENT INVERSION IN RECTIFIERS OF SWITCHING CONVERTERS

    公开(公告)号:US20200336071A1

    公开(公告)日:2020-10-22

    申请号:US16387142

    申请日:2019-04-17

    Abstract: A method of controlling synchronous rectification transistors in a switching converter includes sensing a drain-to-source voltage across each synchronous rectification transistor each switching half-cycle of the switching converter. An average of the sensed drain-to-source voltage is calculated for each synchronous rectification transistor over N prior switching half-cycles. A load current transient in the switching converter is sensed based on the sensed drain-to-source voltage of each synchronous rectification transistor and the calculated average of the sensed drain-to-source voltage for each synchronous rectification transistor over the N prior switching half-cycles.

    INTEGRATED ELECTRONIC DEVICE COMPRISING A TEMPERATURE SENSOR AND SENSING METHOD

    公开(公告)号:US20200333197A1

    公开(公告)日:2020-10-22

    申请号:US16921819

    申请日:2020-07-06

    Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.

    Method of real-time access to a differential memory, differential memory and electronic system

    公开(公告)号:US10811093B2

    公开(公告)日:2020-10-20

    申请号:US16225492

    申请日:2018-12-19

    Abstract: In an embodiment, a method of accessing logic data stored in a differential memory using single-ended mode includes: storing second logic data in an auxiliary memory module of the differential memory by copying first logic data stored in a first main memory module of the differential memory into the auxiliary memory module; refreshing the first logic data; receiving a request for reading the first logic data; when refreshing the first logic data, fetching the second logic data when refreshing the first logic data in response to the request for reading the first logic data; and when not refreshing the first logic data, fetching the first logic data in response to the request for reading the first logic data.

    Self-test method, corresponding circuit and device

    公开(公告)号:US10809862B2

    公开(公告)日:2020-10-20

    申请号:US16523302

    申请日:2019-07-26

    Abstract: A touchscreen resistive sensor includes a network of resistive sensor branches coupled to a number of sensor nodes arranged at touch locations of the touchscreen. A test sequence is performed by sequentially applying to each sensor node a reference voltage level, jointly coupling to a common line the other nodes, sensing a voltage value at the common line, and declaring a short circuit condition as a result of the voltage value sensed at the common line reaching a short circuit threshold. A current value level flowing at the sensor node to which the reference voltage level is applied is sensed and a malfunction of the resistive sensor branch coupled with the sensor node to which a reference voltage level is applied is generated as a result of the current value sensed at the sensor node reaching an upper threshold or lower threshold.

Patent Agency Ranking