Abstract:
A filtered laser array assembly generally includes an array of laser emitters coupled between external modulators and an arrayed waveguide grating (AWG). Each of the laser emitters emits light across a plurality of wavelengths including, for example, channel wavelengths in an optical communication system. The AWG filters the emitted light from each of the laser emitters at different channel wavelengths associated with each of the laser emitters. Lasing cavities are formed between each of the laser emitters and a back reflector coupled to an output of the AWG such that laser output from the laser emitters is provided at the respective channel wavelengths of the reflected, filtered light. The external modulators enable high speed modulation of the laser output. The modulated laser output may then be optically multiplexed to produce an aggregate optical signal including multiple channel wavelengths.
Abstract:
A laser apparatus has a first mirror, a second mirror, at least a portion of which is defined by the first and second mirrors. The laser has an active region located in the laser cavity, which is capable of stimulated emission at one or more wavelengths of light. The second mirror comprises a plurality of dielectric layers arranged in parallel and having a reflectivity band with a peak reflectivity at a peak wavelength, said reflectivity band having a width of less than 1 nm at a reflectivity of 3% less than the peak reflectivity. The laser apparatus may be a tunable laser apparatus in which the peak wavelength of the reflectivity band is adjusted, thereby adjusting the lasing wavelength of the laser. The reflectivity band may be a lasing threshold reflectivity band over which the reflectivity of the second mirror is greater than a lasing threshold reflectivity which is sufficient to permit lasing.
Abstract:
A zigzag waveguide device-based apparatus and method for achieving or maintaining wavelength lock for a tunable laser designed to generate light at a selected one of a plurality of target wavelengths. The apparatus has a reflectively coupled zigzag waveguide device for receiving a portion of light output by the tunable laser, the zigzag waveguide device having a plurality of filters, each having a passband centered at a respective one of the plurality of target wavelengths, whereby said zigzag waveguide device produces a plurality of filtered light outputs. A plurality of photosensors is provided, one for each of said plurality of filters, each said filter positioned to receive a respective one of the plurality of filtered light outputs, each said filter producing a filter output signal related to the intensity of said portion of light in the passband of the corresponding filter. A processor generates, in response to the plurality of filter output signals, a control signal to adjust the lasing wavelength of the tunable laser to achieve or maintain said selected one of the target wavelengths. In one embodiment, the zigzag waveguide device includes a first waveguide that is coupled to the laser to receive light output. A first wavelength filter is coupled to the first waveguide to receive light therefrom. The first wavelength filter transmits a band of wavelengths and reflecting one or more bands of wavelengths. A second waveguide is coupled to the first wavelength filter and receives light reflected from the first wavelength filter. A mirror is coupled to the second waveguide and receives light from the second waveguide. A third waveguide is coupled to the mirror to receive light reflected from the mirror. A second wavelength filter is coupled to the third waveguide to receive light therefrom. The second wavelength filter transmits a band of wavelengths different from the band of wavelengths transmitted by the first wavelength filter and reflects one or more bands of wavelengths. A first photodiode is coupled to receive light transmitted by the first wavelength filter. A second photodiode is coupled to receive light transmitted by the second wavelength filter. A laser wavelength controller is coupled to the tunable laser and is capable of modifying the wavelength of the tunable laser based at least in part on an output of one of the first and second photodiodes.
Abstract:
A monitored laser system includes a laser with a first mirror and an exit mirror. The laser also has a laser cavity defined at least in part by the first mirror and the exit mirror. Within the laser cavity is an active region that contains material that is capable of stimulated emission at one or more wavelengths such that laser light is emitted from the laser. A power source is coupled to the active region. A multiple reflectivity band reflector (MRBR) is coupled to at least a portion of the emitted laser light. The MRBR has at least first and second wavelength bands with reflectivity above a particular reflectivity separated by at least a third wavelength band having reflectivity below the particular reflectivity. A first photodiode is coupled to at least a portion of the filtered laser light and produces an output based on the amount and wavelength of light received. A means for adjusting the emitted wavelength of the laser toward a particular wavelength in one of the at least first, second, and third wavelength bands based at least in part on the output of the first photodiode.
Abstract:
One or more photodiode performance parameters for a photodiode are determined by first determining four data points Iph1, Voc1, Iph2, and Voc2, where Iph1 is a first short-circuit current, and Voc1 is a first open-circuit voltage, for the photodiode under a first illumination condition, and Iph2 is a second short-circuit current, and Voc2 is a second open-circuit voltage, for the photodiode under a second illumination condition. Then, at least one photodiode performance parameter for the photodiode is determined as a function of said four data points.
Abstract:
Methods of manufacturing edge-emitting lasers include cleaving a semiconductor wafer along one or more streets formed on the wafer. A street is an extended region formed without dielectric and metal layers and may be formed on the semiconductor wafer, for example, by a selective wet etching process or a dry etching process. Cleaving along the street(s) without dielectric and metal layers achieves cleaved facets, which are substantially free from microstep defects and metal contamination. After cleaving, a dielectric material may be provided on the remaining street portions along the ends of the cleaved facets, for example, by intentional overspray deposition of facet coatings.
Abstract:
A heat transfer device may be used to provide a thermal conduit from heat generating components mounted on transversely oriented circuit boards. The heat transfer device generally includes a base portion for supporting and thermally coupling with at least one heat generating component on a main circuit board and a transverse portion for supporting and thermally coupling with at least one heat generating component on a daughter circuit board that is oriented transverse to the main circuit board. The base and transverse portions may be made of a thermally conductive material with raised pedestals providing the thermal coupling with the heat generating components. The transverse portion of the heat transfer device may also be designed to facilitate connecting the daughter circuit board to the main circuit board. The heat transfer device may be used in an opto-electronic communications module, such as a broadband digital access (BDA) module used in a hybrid fiber-coaxial (HFC) network.
Abstract:
A lid assembly containing a lid gasket may be used to replace an existing lid assembly that forms part of a housing of an outdoor electronic device, such as an RF amplifier in a hybrid fiber-coaxial (HFC) network delivering CATV services to subscriber locations. The replacement lid assembly is configured to engage and cover an existing base of the electronic device, such as an RF amplifier, without disconnecting the electronic device (e.g., without interrupting CATV service). The lid gasket in the lid assembly may comply with current requirements and/or standards and is configured to engage the existing base adjacent an older gasket in the base to reinforce sealing of the electronic device housing. The lid assembly may also be configured to include improved or upgraded electronic components, such as an integrated power supply, and/or to provide improved heat transfer.
Abstract:
A semiconductor optical device including a buried heterostructure (BH) has reduced parasitic capacitance and reduced inter-diffusion. The semiconductor optical device is manufactured by a regrowth on both sides of a mesa structure with an Fe-doped current blocking layer and an n-type cladding layer outside of an active region in the mesa structure. The Fe-doped current blocking layer and the n-type cladding layer may be disposed and configured such that Fe/Zn inter-diffusion is reduced or prevented by minimal contact between the Fe-doped current blocking layer and a highly Zn-doped cladding layer and by the n-type cladding layer, as will be described in greater detail below. A low Zn-doped or undoped material may be used for a thin cladding layer above the active region in the mesa structure to further suppress Zn/Fe inter-diffusion.
Abstract:
The present disclosure is generally directed to techniques for thermal management within optical subassembly modules that include thermally coupling heat-generating components, such as laser assemblies, to a temperature control device, such as a thermoelectric cooler, without the necessity of disposing the heat-generating components within a hermetically-sealed housing. Accordingly, this arrangement provides a thermal communication path that extends from the heat-generating components, through the temperature control device, and ultimately to a heatsink component, such as a sidewall of a transceiver housing, without the thermal communication path extending through a hermetically-sealed housing/cavity.