FILTERED LASER ARRAY ASSEMBLY WITH EXTERNAL OPTICAL MODULATION AND WDM OPTICAL SYSTEM INCLUDING SAME
    41.
    发明申请
    FILTERED LASER ARRAY ASSEMBLY WITH EXTERNAL OPTICAL MODULATION AND WDM OPTICAL SYSTEM INCLUDING SAME 有权
    具有外部光学调制和包括其中的WDM光学系统的过滤激光阵列组件

    公开(公告)号:US20140093244A1

    公开(公告)日:2014-04-03

    申请号:US13644113

    申请日:2012-10-03

    Abstract: A filtered laser array assembly generally includes an array of laser emitters coupled between external modulators and an arrayed waveguide grating (AWG). Each of the laser emitters emits light across a plurality of wavelengths including, for example, channel wavelengths in an optical communication system. The AWG filters the emitted light from each of the laser emitters at different channel wavelengths associated with each of the laser emitters. Lasing cavities are formed between each of the laser emitters and a back reflector coupled to an output of the AWG such that laser output from the laser emitters is provided at the respective channel wavelengths of the reflected, filtered light. The external modulators enable high speed modulation of the laser output. The modulated laser output may then be optically multiplexed to produce an aggregate optical signal including multiple channel wavelengths.

    Abstract translation: 滤波的激光阵列组件通常包括耦合在外部调制器和阵列波导光栅(AWG)之间的激光发射器的阵列。 每个激光发射器在多个波长中发射光,包括例如光通信系统中的信道波长。 AWG在与每个激光发射器相关联的不同通道波长处对来自每个激光发射器的发射光进行滤波。 在每个激光发射器和耦合到AWG的输出的后反射器之间形成激光腔,使得来自激光发射器的激光输出被提供在被反射的滤光光的各个通道波长处。 外部调制器可实现激光输出的高速调制。 然后可以将经调制的激光输出光学多路复用以产生包括多个信道波长的聚合光信号。

    Single lasing-reflectivity peak reflector
    42.
    发明申请
    Single lasing-reflectivity peak reflector 审中-公开
    单激光反射率峰值反射器

    公开(公告)号:US20030053512A1

    公开(公告)日:2003-03-20

    申请号:US10196651

    申请日:2002-07-16

    CPC classification number: H01S5/18361 H01S5/0687

    Abstract: A laser apparatus has a first mirror, a second mirror, at least a portion of which is defined by the first and second mirrors. The laser has an active region located in the laser cavity, which is capable of stimulated emission at one or more wavelengths of light. The second mirror comprises a plurality of dielectric layers arranged in parallel and having a reflectivity band with a peak reflectivity at a peak wavelength, said reflectivity band having a width of less than 1 nm at a reflectivity of 3% less than the peak reflectivity. The laser apparatus may be a tunable laser apparatus in which the peak wavelength of the reflectivity band is adjusted, thereby adjusting the lasing wavelength of the laser. The reflectivity band may be a lasing threshold reflectivity band over which the reflectivity of the second mirror is greater than a lasing threshold reflectivity which is sufficient to permit lasing.

    Abstract translation: 激光装置具有第一反射镜,第二反射镜,其至少一部分由第一和第二反射镜限定。 激光器具有位于激光器腔中的有源区,其能够在一个或多个波长的光下被激发。 第二反射镜包括平行排列并具有在峰值波长处具有峰值反射率的反射率带的多个电介质层,所述反射率带的反射率比峰值反射率小3%,其宽度小于1nm。 激光装置可以是其中调整反射带的峰值波长的可调谐激光装置,从而调节激光器的激光波长。 反射率带可以是激光阈值反射带,第二反射镜的反射率大于其足以允许激光的激光阈值反射率。

    Reflectively coupled zigzag waveguide device for wavelength locking

    公开(公告)号:US20030026532A1

    公开(公告)日:2003-02-06

    申请号:US10029058

    申请日:2001-12-20

    Abstract: A zigzag waveguide device-based apparatus and method for achieving or maintaining wavelength lock for a tunable laser designed to generate light at a selected one of a plurality of target wavelengths. The apparatus has a reflectively coupled zigzag waveguide device for receiving a portion of light output by the tunable laser, the zigzag waveguide device having a plurality of filters, each having a passband centered at a respective one of the plurality of target wavelengths, whereby said zigzag waveguide device produces a plurality of filtered light outputs. A plurality of photosensors is provided, one for each of said plurality of filters, each said filter positioned to receive a respective one of the plurality of filtered light outputs, each said filter producing a filter output signal related to the intensity of said portion of light in the passband of the corresponding filter. A processor generates, in response to the plurality of filter output signals, a control signal to adjust the lasing wavelength of the tunable laser to achieve or maintain said selected one of the target wavelengths. In one embodiment, the zigzag waveguide device includes a first waveguide that is coupled to the laser to receive light output. A first wavelength filter is coupled to the first waveguide to receive light therefrom. The first wavelength filter transmits a band of wavelengths and reflecting one or more bands of wavelengths. A second waveguide is coupled to the first wavelength filter and receives light reflected from the first wavelength filter. A mirror is coupled to the second waveguide and receives light from the second waveguide. A third waveguide is coupled to the mirror to receive light reflected from the mirror. A second wavelength filter is coupled to the third waveguide to receive light therefrom. The second wavelength filter transmits a band of wavelengths different from the band of wavelengths transmitted by the first wavelength filter and reflects one or more bands of wavelengths. A first photodiode is coupled to receive light transmitted by the first wavelength filter. A second photodiode is coupled to receive light transmitted by the second wavelength filter. A laser wavelength controller is coupled to the tunable laser and is capable of modifying the wavelength of the tunable laser based at least in part on an output of one of the first and second photodiodes.

    Multiple reflectivity band reflector for laser wavelength monitoring
    44.
    发明申请
    Multiple reflectivity band reflector for laser wavelength monitoring 失效
    多反射带反射器用于激光波长监测

    公开(公告)号:US20020163942A1

    公开(公告)日:2002-11-07

    申请号:US10029008

    申请日:2001-12-20

    CPC classification number: H01S3/1303 H01S3/131 H01S3/1392 H01S5/0687

    Abstract: A monitored laser system includes a laser with a first mirror and an exit mirror. The laser also has a laser cavity defined at least in part by the first mirror and the exit mirror. Within the laser cavity is an active region that contains material that is capable of stimulated emission at one or more wavelengths such that laser light is emitted from the laser. A power source is coupled to the active region. A multiple reflectivity band reflector (MRBR) is coupled to at least a portion of the emitted laser light. The MRBR has at least first and second wavelength bands with reflectivity above a particular reflectivity separated by at least a third wavelength band having reflectivity below the particular reflectivity. A first photodiode is coupled to at least a portion of the filtered laser light and produces an output based on the amount and wavelength of light received. A means for adjusting the emitted wavelength of the laser toward a particular wavelength in one of the at least first, second, and third wavelength bands based at least in part on the output of the first photodiode.

    Abstract translation: 被监视的激光系统包括具有第一反射镜和出射镜的激光器。 激光器还具有至少部分地由第一反射镜和出射镜限定的激光腔。 在激光腔内是包含能够在一个或多个波长处被激发的材料的激活区域,使得激光从激光器发射。 电源耦合到有源区。 多反射带反射器(MRBR)耦合到所发射的激光的至少一部分。 MRBR具有至少第一和第二波长带,其具有高于具有低于特定反射率的反射率的至少第三波长带隔开的特定反射率的反射率。 第一光电二极管被耦合到滤波的激光的至少一部分,并且基于所接收的光的量和波长产生输出。 用于至少部分地基于第一光电二极管的输出,将至少第一,第二和第三波长带中的一个波长的激光发射波长调整到特定波长的装置。

    Method for determining photodiode performance parameters

    公开(公告)号:US20020134908A1

    公开(公告)日:2002-09-26

    申请号:US09769094

    申请日:2001-01-24

    CPC classification number: G01R31/2635

    Abstract: One or more photodiode performance parameters for a photodiode are determined by first determining four data points Iph1, Voc1, Iph2, and Voc2, where Iph1 is a first short-circuit current, and Voc1 is a first open-circuit voltage, for the photodiode under a first illumination condition, and Iph2 is a second short-circuit current, and Voc2 is a second open-circuit voltage, for the photodiode under a second illumination condition. Then, at least one photodiode performance parameter for the photodiode is determined as a function of said four data points.

    HEAT TRANSFER DEVICE PROVIDING HEAT TRANSFER FROM COMPONENTS ON TRANSVERSELY ORIENTED CIRCUIT BOARDS

    公开(公告)号:US20240064939A1

    公开(公告)日:2024-02-22

    申请号:US17888892

    申请日:2022-08-16

    CPC classification number: H05K7/2039 H05K1/14 H05K5/0026

    Abstract: A heat transfer device may be used to provide a thermal conduit from heat generating components mounted on transversely oriented circuit boards. The heat transfer device generally includes a base portion for supporting and thermally coupling with at least one heat generating component on a main circuit board and a transverse portion for supporting and thermally coupling with at least one heat generating component on a daughter circuit board that is oriented transverse to the main circuit board. The base and transverse portions may be made of a thermally conductive material with raised pedestals providing the thermal coupling with the heat generating components. The transverse portion of the heat transfer device may also be designed to facilitate connecting the daughter circuit board to the main circuit board. The heat transfer device may be used in an opto-electronic communications module, such as a broadband digital access (BDA) module used in a hybrid fiber-coaxial (HFC) network.

    SEMICONDUCTOR OPTICAL DEVICE WITH A BURIED HETEROSTRUCTURE (BH) HAVING REDUCED PARASITIC CAPACITANCE AND REDUCED INTER-DIFFUSION

    公开(公告)号:US20230411931A1

    公开(公告)日:2023-12-21

    申请号:US17841983

    申请日:2022-06-16

    CPC classification number: H01S5/227 H01S5/34 H01S5/2205

    Abstract: A semiconductor optical device including a buried heterostructure (BH) has reduced parasitic capacitance and reduced inter-diffusion. The semiconductor optical device is manufactured by a regrowth on both sides of a mesa structure with an Fe-doped current blocking layer and an n-type cladding layer outside of an active region in the mesa structure. The Fe-doped current blocking layer and the n-type cladding layer may be disposed and configured such that Fe/Zn inter-diffusion is reduced or prevented by minimal contact between the Fe-doped current blocking layer and a highly Zn-doped cladding layer and by the n-type cladding layer, as will be described in greater detail below. A low Zn-doped or undoped material may be used for a thin cladding layer above the active region in the mesa structure to further suppress Zn/Fe inter-diffusion.

Patent Agency Ranking