METHOD AND SYSTEM FOR WIRED AND WIRELESS COMMUNICATION USING ULTRASOUND DEVICES

    公开(公告)号:US20240013909A1

    公开(公告)日:2024-01-11

    申请号:US18220530

    申请日:2023-07-11

    CPC classification number: G16H40/67 A61B8/4472 A61B8/56 H04L47/12

    Abstract: An ultrasound system may include an ultrasound device that includes a first wired communication module and a first wireless communication module. The ultrasound system may further include a processing device that includes a second wired communication module and a second wireless communication module. The processing device may pair with the ultrasound device over a wireless connection using the first wireless communication module and the second wireless communication module. The processing device may further indicate a wireless connection on a display screen of the processing device. The processing device may further conduct an ultrasound imaging session over the wireless connection. The processing device may further determine that a cable has been connected between the ultrasound device and the processing device. The processing device may further terminate the wireless connection with the ultrasound device. The processing device may further indicate a wired connection on the display screen of the processing device.

    Ultrasound transducer devices and methods for fabricating ultrasound transducer devices

    公开(公告)号:US11590532B2

    公开(公告)日:2023-02-28

    申请号:US16296476

    申请日:2019-03-08

    Abstract: Aspects of the technology described herein relate to ultrasound transducer devices including capacitive micromachined ultrasonic transducers (CMUTs) and methods for forming CMUTs in ultrasound transducer devices. Some embodiments include forming a cavity of a CMUT by forming a first layer of insulating material on a first substrate, forming a second layer of insulating material on the first layer of insulating material, and then etching a cavity in the second insulating material. A second substrate may be bonded to the first substrate to seal the cavity. The first layer of insulating material may include, for example, aluminum oxide. The first substrate may include integrated circuitry. Some embodiments include forming through-silicon vias (TSVs) in the first substrate prior to forming the first and second insulating layers (TSV-Middle process) or subsequent to bonding the first and second substrates (TSV-Last process).

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