Abstract:
A copolymer comprises the polymerized product of a base-soluble monomer of formula (I): wherein Ra is H, F, C1-10 alkyl, or C1-10 fluoroalkyl, L1 is an m valent C2-30 alkylene, C3-30 cycloalkylene, C6-30 arylene, C7-30 aralkylene group, X1 is independently a base-soluble organic group comprising β-diketone, β-ester-ketone, β-di-ester, or a combination comprising at least one of the foregoing; and an additional monomer copolymerizable with the base-soluble monomer of formula (I).
Abstract:
A photoresist composition comprises an acid-sensitive polymer, and a cyclic sulfonium compound having the formula: (Ra)1—(Ar)—S+(—CH2—)m·−O3S—(CRb2)n-(L)p-X wherein each Ra is independently a substituted or unsubstituted C1-30 alkyl group, C6-30 aryl group, C7-30 aralkyl group, or combination comprising at least one of the foregoing, Ar is a monocyclic, polycyclic, or fused polycyclic C6-30 aryl group, each Rb is independently H, F, a linear or branched C1-10 fluoroalkyl or a linear or branched heteroatom-containing C1-10 fluoroalkyl, L is a C1-30 linking group optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing heteroatoms, X is a substituted or unsubstituted, C5 or greater monocyclic, polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing, and 1 is an integer of 0 to 4, m is an integer of 3 to 20, n is an integer of 0 to 4, and p is an integer of 0 to 2.
Abstract:
An adapter card is used to convert the PCI Express X1 slot to CompactPCI Express X1 slot which is compatible with PICMG EXP.0 R1.0 specification in the commercial and industrial control computer. The adapter card includes the impedance controlled circuit board, the connecting circuit board, the PCI Express port, the CPCI Express signal socket, the CPCI power socket, the double row hole socket, the double row bent needle plug, the linking block and a dam-board. The adapter card expands the application of PCI Express X1 slots by a large margin and make it compatible with CPCI Express X1 card.
Abstract:
An analog-to-digital converter is provided. The analog-to-digital converter includes a sampling-voltage providing circuit, a first comparison circuit, a second comparison circuit, and an encoder circuit. The sampling-voltage providing circuit provides a group of first comparison voltages and a group of second comparison voltages. The first comparison circuit performs a first comparison operation to an analog-signal input quantity according to the group of first comparison voltages to generate a first comparison digital quantity. The second comparison circuit selects second comparison voltages among the group of second comparison voltages according to the first comparison digital quantity and performs a second comparison operation to the analog-signal input quantity according to the selected second comparison voltages to generate a second comparison digital quantity. The encoder circuit encodes the first comparison digital quantity and the second comparison digital quantity and generates a digital quantity corresponding to the analog-signal input quantity.
Abstract:
A copolymer comprises the polymerized product of a base-soluble monomer of formula (I): wherein Ra is H, F, C1-10 alkyl, or C1-10 fluoroalkyl, L1 is an m valent C2-30 alkylene, C3-30 cycloalkylene, C6-30 arylene, C7-30 aralkylene group, X1 is independently a base-soluble organic group comprising β-diketone, β-ester-ketone, β-di-ester, or a combination comprising at least one of the foregoing; and an additional monomer copolymerizable with the base-soluble monomer of formula (I).
Abstract:
New photoresist compositions are provided that comprise a component that comprises two or more amide groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a multi-amide component that can function to decrease undesired photogenrated-acid diffusion out of unexposed regions of a photoresist coating layer
Abstract:
New polymers are provided comprising (i) one or more covalently linked photoacid generator moieties and (ii) one or more photoacid-labile groups, wherein the one or more photoacid generator moieties are a component of one or more of the photoacid-labile groups. Preferred polymers of the invention are suitable for use in photoresists imaged at short wavelengths such as sub-200 nm, particularly 193 nm.
Abstract:
New methods are provided for synthesis of photoacid generator compounds (“PAGs”), new photoacid generator compounds and photoresist compositions that comprise such PAG compounds. In a particular aspect, photoacid generators that comprise 1) a SO3− moiety; 2) one or more fluorinated carbons; and 3) one or more of the fluorinated carbons either directly or indirectly substituted by an ester keto group.
Abstract:
New methods are provided for synthesis of photoacid generator compounds (“PAGs”), new photoacid generator compounds and photoresist compositions that comprise such PAG compounds. In a particular aspect, sulfonium-containing (S+) photoacid generators and methods of synthesis of sulfonium photoacid generators are provided.
Abstract:
New nitrogen-containing compounds are provided that comprise multiple hydroxyl moieties and photoresist compositions that comprise such nitrogen-containing compounds. Preferred nitrogen-containing compounds comprise 1) multiple hydroxyl substituents (i.e. 2 or more) and 2) one or more photoacid-labile groups.