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106 条记录 (耗时 0.029 秒)

    Method for displaying information about use of hack tool in online game
    42.
    发明授权
    Method for displaying information about use of hack tool in online game 失效
    在网络游戏中显示使用黑客工具的信息的方法

    公开(公告)号：US08388441B2

    公开(公告)日：2013-03-05

    申请号：US12957360

    申请日：2010-11-30

    申请人： Dong Woo Shin ,  Kee Chul Kim ,  Jae Hwang Lee ,  Young Hwan Kim ,  Kyu Ho Lee

    发明人： Dong Woo Shin ,  Kee Chul Kim ,  Jae Hwang Lee ,  Young Hwan Kim ,  Kyu Ho Lee

    IPC分类号： A63F9/24

    CPC分类号： A63F13/71 ,  A63F13/335 ,  A63F13/352 ,  A63F13/75 ,  A63F2300/513 ,  A63F2300/535 ,  A63F2300/5586 ,  G06F21/57 ,  G06F2221/2109

    摘要： Disclosed herein is a method for displaying information about the use of a hack tool in the online game. When a game IDentification (ID) is input, a client system accesses a security server, and requests and receives the number of times that one or more hack tools have been used for the game ID. The client system provides the game ID and the number of times that hack tools have been used to a game server so that the number of times that hack tools have been used is shared by one or more gamers who participate in the game provided by the game server. When the client system detects the use of a hack tool, the client system increases the number of times that hack tools have been used for the game ID by 1, and provides the number of times that hack tools have been used to the security server.

    摘要翻译： 本文公开了一种用于在线游戏中显示关于使用黑客工具的信息的方法。 当输入游戏标识（ID）时，客户端系统访问安全服务器，并请求并接收一个或多个黑客工具已被用于游戏ID的次数。 客户端系统提供游戏ID和黑客工具已经被使用到游戏服务器的次数，以便使用黑客工具的次数由参与游戏提供的游戏的一个或多个玩家共享 服务器。 当客户端系统检测到使用黑客工具时，客户端系统将攻击工具的游戏ID的次数增加1，并将攻击工具的次数提供给安全服务器。

    Method of forming organic semiconductor layer pattern
    44.
    发明授权
    Method of forming organic semiconductor layer pattern 有权
    形成有机半导体层图案的方法

    公开(公告)号：US08057848B2

    公开(公告)日：2011-11-15

    申请号：US11453930

    申请日：2006-06-16

    申请人： Jong-Jin Park ,  Tae-Yong Noh ,  Myeong-Suk Kim ,  Sung-Hun Lee ,  Eun-Jeong Jeong ,  Dong-Woo Shin ,  Lyong-Sun Pu

    发明人： Jong-Jin Park ,  Tae-Yong Noh ,  Myeong-Suk Kim ,  Sung-Hun Lee ,  Eun-Jeong Jeong ,  Dong-Woo Shin ,  Lyong-Sun Pu

    IPC分类号： B05D5/06 ,  B05D3/06 ,  B41M3/12

    CPC分类号： H01L51/0013 ,  H01L27/3244 ,  H01L51/0055

    摘要： A donor substrate and a method of forming an organic semiconductor layer pattern using the donor substrate, whereby a donor substrate is formed using an organic semiconductor precursor having a thermally decomposable substituent through a wet process, the organic semiconductor precursor substrate in the donor substrate is transferred to a receptor substrate as a pattern and heated, and thus is changed into an organic semiconductor. As a result, an organic semiconductor layer pattern is obtained. The method can be used in the manufacture of various devices such as organic light emitting diode and organic thin film transistor. A low-molecular weight organic semiconductor layer pattern can be formed through a wet process, not through deposition. Thus, using the method, a flat display device can be conveniently manufactured at low cost.

    摘要翻译： 供体基板和使用供体基板形成有机半导体层图案的方法，由此通过湿法使用具有可热分解取代基的有机半导体前体形成供体基板，转移供体基板中的有机半导体前体基板 作为图案的受体底物加热，从而变成有机半导体。 结果，得到有机半导体层图案。 该方法可用于制造有机发光二极管和有机薄膜晶体管等各种器件。 可以通过湿法而不是通过沉积形成低分子量有机半导体层图案。 因此，使用该方法，可以以低成本方便地制造平面显示装置。

    Heat sink for dissipating heat and apparatus having the same
    45.
    发明授权
    Heat sink for dissipating heat and apparatus having the same 有权
    用于散热的散热器和具有相同功能的设备

    公开(公告)号：US07920383B2

    公开(公告)日：2011-04-05

    申请号：US12265101

    申请日：2008-11-05

    申请人： Jin-Kyu Yang ,  Dong-Woo Shin ,  Hyun-Jong Oh

    发明人： Jin-Kyu Yang ,  Dong-Woo Shin ,  Hyun-Jong Oh

    IPC分类号： H05K7/20

    CPC分类号： H01L23/3675 ,  H01L23/4093 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A heat sink includes first and second base plates to contact with first and second surfaces of a heat source, respectively. The first base plate includes a support unit protruding from a first surface and a first dissipating unit to dissipate heat from the heat source. The second base plate includes a penetrating hole spaced apart from an edge portion to hold the support unit and a second dissipating unit to dissipate the heat from the heat source. A coupling member is positioned on an upper surface of the support unit and applies a force to the first and second base plates to thereby combine the first and second base plates to the heat source. The base plates are combined to the memory module without any loss of the surface area of the dissipating fin, to thereby improve the dissipation efficiency of the heat sink.

    摘要翻译： 散热器包括分别与热源的第一和第二表面接触的第一和第二基板。 第一基板包括从第一表面突出的支撑单元和第一散热单元，以从热源散发热量。 第二基板包括与边缘部分间隔开以保持支撑单元的穿透孔和用于消散来自热源的热量的第二消散单元。 联接构件定位在支撑单元的上表面上，并且向第一和第二基板施加力，从而将第一和第二基板组合到热源。 将基板组合到存储器模块中，而不会损耗散热片的表面积，从而提高散热器的散热效率。

    Method for fabricating capacitor of semiconductor device
    46.
    发明授权
    Method for fabricating capacitor of semiconductor device 失效
    制造半导体器件电容器的方法

    公开(公告)号：US07666738B2

    公开(公告)日：2010-02-23

    申请号：US11952767

    申请日：2007-12-07

    申请人： Dong-Woo Shin ,  Hyung-Bok Choi ,  Jong-Min Lee ,  Jin-Woong Kim

    发明人： Dong-Woo Shin ,  Hyung-Bok Choi ,  Jong-Min Lee ,  Jin-Woong Kim

    IPC分类号： H01L21/8242

    CPC分类号： H01L28/84 ,  H01L21/32155 ,  H01L28/91

    摘要： The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in a predetermined first doping concentration suppressing dopants from locally agglomerating; forming an impurity undoped second amorphous silicon layer on the first amorphous silicon layer in an in-situ condition; forming a storage node by patterning the first amorphous silicon layer and the second amorphous silicon layer; forming silicon grains on a surface of the storage node; and doping the impurity to the storage node and the silicon grains until reaching a second predetermined concentration for providing conductivity required by the storage node.

    摘要翻译： 本发明涉及半导体器件的电容器的制造方法。 该方法包括以下步骤：在预定的第一掺杂浓度抑制掺杂剂中形成掺杂有杂质的第一非晶硅层局部凝聚; 在原位条件下在第一非晶硅层上形成杂质未掺杂的第二非晶硅层; 通过图案化所述第一非晶硅层和所述第二非晶硅层来形成存储节点; 在所述存储节点的表面上形成硅晶粒; 以及将杂质掺杂到存储节点和硅晶粒直到达到第二预定浓度以提供存储节点所需的导电性。

    Capacitor and method for fabricating the same
    48.
    发明授权
    Capacitor and method for fabricating the same 失效
    电容器及其制造方法

    公开(公告)号：US07595526B2

    公开(公告)日：2009-09-29

    申请号：US11201306

    申请日：2005-08-11

    申请人： Dong-Woo Shin ,  Hyung-Bok Choi

    发明人： Dong-Woo Shin ,  Hyung-Bok Choi

    IPC分类号： H01L29/94

    CPC分类号： H01L28/84 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/90

    摘要： A method for manufacturing a capacitor in a semiconductor device for securing capacitance without a merging phenomenon during a MPS grain growth process. The manufacturing step begins with a preparation of a substrate. The interlayer dielectric (ILD) layer is formed on the substrate and is etched to form conductive plug. Then, an etch barrier layer and a sacrifice insulating layer are formed on entire surface subsequently. A cylinder typed first electrode is formed over the conductive plug using the sacrifice insulating layer. Thereafter, first meta-stable poly silicon (MPS) grains are formed on inner wall of the first electrode except a bottom region thereof. However, second MPS grains with small sizes can be formed in the bottom region for increasing a storage area of the first electrode. Finally, a dielectric layer and a second electrode are formed on the first electrode subsequently.

    摘要翻译： 一种用于在MPS晶粒生长过程中用于在没有合并现象的情况下确保电容的半导体器件中的电容器的制造方法。 制造步骤从制备基材开始。 层间电介质层（ILD）层形成在衬底上并被蚀刻以形成导电插塞。 然后，随后在整个表面上形成蚀刻阻挡层和牺牲绝缘层。 使用牺牲绝缘层在导电插塞上形成圆筒型第一电极。 此后，除了其底部区域之外，在第一电极的内壁上形成第一元稳定多晶硅（MPS）晶粒。 然而，可以在底部区域中形成具有小尺寸的第二MPS晶粒，以增加第一电极的存储面积。 最后，随后在第一电极上形成电介质层和第二电极。