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公开(公告)号：US20200218374A1
公开(公告)日：2020-07-09
申请号：US16733412
申请日：2020-01-03
申请人： H.C. STARCK INC.
发明人： Helia JALILI , Francois DARY , Barbara COX
IPC分类号： G06F3/041 , G02F1/1362 , H01L23/532 , H01L21/768 , C25D11/02 , G02F1/1333 , H01L27/15
摘要： In various embodiments, electronic devices such as thin-film transistors and/or touch-panel displays incorporate bilayer capping layers and/or barrier layers.
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公开(公告)号：US20180187297A1
公开(公告)日：2018-07-05
申请号：US15908896
申请日：2018-03-01
申请人： H.C. STARCK, INC.
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.
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公开(公告)号：US09976212B2
公开(公告)日：2018-05-22
申请号：US14908396
申请日：2014-07-31
申请人： H.C. STARCK INC.
发明人： Steven A. Miller
CPC分类号： C23C14/3414 , C23C24/04 , H01J37/3417 , H01J37/3426 , H01J2237/081 , H01J2237/332
摘要： In various embodiments, eroded sputtering targets are partially refurbished by spray-depositing particles of target material to at least partially fill certain regions (e.g., regions of deepest erosion) without spray-deposition within other eroded regions (e.g., regions of less erosion). The partially refurbished sputtering targets may be sputtered after the partial refurbishment without substantive changes in sputtering properties (e.g., sputtering rate) and/or properties of the sputtered films.
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公开(公告)号：US09922808B2
公开(公告)日：2018-03-20
申请号：US15067358
申请日：2016-03-11
申请人： H.C. Starck, Inc.
发明人： Gary Alan Rozak , Mark E. Gaydos
CPC分类号： H01J37/3429 , B22F1/0003 , B22F3/15 , B22F3/24 , B22F2003/153 , B22F2003/247 , B22F2301/20 , B22F2998/10 , C22C27/04 , C23C14/3407 , C23C14/3414 , H01J37/3491
摘要： A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 μm width (e.g., less than about 50 μm width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.
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公开(公告)号：US09412568B2
公开(公告)日：2016-08-09
申请号：US13628093
申请日：2012-09-27
申请人： H.C. Starck, Inc.
发明人： Francois-Charles Dary , Mark Gaydos , William Loewenthal , Steven A. Miller , Gary Rozak , Scott Jeffrey Volchko , Stefan Zimmermann , Michael Thomas Stawovy
CPC分类号： H01J37/3429 , B05D1/02 , B23K31/02 , C23C14/3407 , C23C14/3414 , C23C24/04 , H01J37/3417 , H01J37/3426 , H01J2237/081 , H01J2237/332 , Y10T156/10
摘要： In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.
摘要翻译： 在各种实施例中，至少部分地通过溅射材料的喷涂和/或焊接形成连接的溅射靶。
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46.发明申请公开(公告)号：US20160203960A1
公开(公告)日：2016-07-14
申请号：US14992266
申请日：2016-01-11
申请人： H.C. STARCK INC.
发明人： Shuwei Sun , Gary Alan Rozak , Qi Zhang , Barbara Cox , YEN-TE Lee
CPC分类号： H01J37/3429 , C22C21/00 , C22C27/04 , C23C14/083 , C23C14/14 , C23C14/165 , C23C14/3407 , G06F2203/04103
摘要： Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.
摘要翻译： 发现包括钼，铌和钽的溅射靶可用于电子器件的溅射膜。 具有约88至97重量％钼的溅射靶显示出改进的性能，特别是在蚀刻时，例如当同时蚀刻包括Mo，Nb和Ta的合金层以及金属层（例如，铝层）时。 这些目标在制造触摸屏设备中特别有用。
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47.发明授权Multi-block sputtering target with interface portions and associated methods and articles 有权具有界面部分和相关方法和制品的多块溅射靶公开(公告)号：US09334565B2
公开(公告)日：2016-05-10
申请号：US13793043
申请日：2013-03-11
申请人： H.C. Starck, Inc.
CPC分类号： H01J37/3429 , B22F1/0003 , B22F3/15 , B22F3/24 , B22F7/064 , B22F2003/153 , B22F2003/247 , B22F2301/20 , B22F2998/10 , C22C1/045 , C22C27/04 , C23C14/3407 , C23C14/3414 , C23C24/04
摘要： A sputtering target that includes at least two consolidated blocks, each block including an alloy including a first metal (e.g., a refractory metal such as molybdenum in an amount greater than about 30 percent by weight) and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being prepared free of any microstructure derived from a diffusion bond of an added loose powder. A process for making the target includes hot isostatically pressing (e.g., below a temperature of 1080° C.), consolidated preform blocks that, prior to pressing, have interposed between the consolidated powder metal blocks at least one continuous solid interface portion. The at least one continuous solid interface portion may include a cold spray body, which may be a mass of cold spray deposited powders on a surface a block, a sintered preform, a compacted powder body (e.g., a tile), or any combination thereof.
摘要翻译： 包括至少两个固结块的溅射靶，每个块包括包含第一金属（例如，大于约30重量％的量的诸如钼的难熔金属）和至少一种另外的合金成分的合金; 以及所述至少两个固结块之间的接头，所述接头被制备成没有衍生自所添加的松散粉末的扩散接合的任何微结构。 用于制造目标的方法包括热等静压（例如，低于1080℃的温度），固化的预成型块，其在压制之前已经在固化的粉末金属块之间插入至少一个连续的固体界面部分。 所述至少一个连续的固体界面部分可以包括冷喷雾体，其可以是在块的表面上的大量冷喷雾沉积的粉末，烧结的预成型体，压实的粉末体（例如，瓷砖）或其任何组合 。
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公开(公告)号：US20130082033A1
公开(公告)日：2013-04-04
申请号：US13628090
申请日：2012-09-27
申请人： H.C. Starck, Inc.
发明人： Scott Jeffrey Volchko , William Loewenthal , Stefan Zimmermann , Mark Gaydos , Steven Alfred Miller
IPC分类号： B23K31/02
CPC分类号： H01J37/3429 , B05D1/02 , B23K31/02 , C23C14/3407 , C23C14/3414 , C23C24/04 , H01J37/3417 , H01J37/3426 , H01J2237/081 , H01J2237/332 , Y10T156/10
摘要： In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.
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公开(公告)号：US11753702B2
公开(公告)日：2023-09-12
申请号：US17038325
申请日：2020-09-30
申请人： H.C. STARCK, INC.
CPC分类号： C22C1/045 , C22C27/04 , C23C14/185 , C23C14/3407 , C23C14/3414 , C23C14/5873 , G06F3/041 , B22F2998/10 , G06F2203/04103 , Y10T428/12743 , Y10T428/12826 , Y10T428/265 , Y10T428/31678 , B22F2998/10 , B22F1/09 , B22F3/115
摘要： The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.
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公开(公告)号：US11443929B2
公开(公告)日：2022-09-13
申请号：US17155254
申请日：2021-01-22
申请人： H.C. STARCK INC.
发明人： Peter R. Jepson , Dincer Bozkaya
摘要： A refractory metal plate is provided. The plate has a center, a thickness, an edge, a top surface and a bottom surface, and has a crystallographic texture (as characterized by through thickness gradient, banding severity; and variation across the plate, for each of the texture components 100//ND and 111//ND, which is substantially uniform throughout the plate.
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